公开(公告)号：US20130313107A1

公开(公告)日：2013-11-28

申请号：US13898311

申请日：2013-05-20

Applicant: Applied Materials, Inc.

Inventor： Keith A. Miller ,  Daniel C. Lubben

IPC: C23C14/35

CPC classification number: C23C14/35 ,  H01J37/3408 ,  H01J37/3482

Abstract: When a magnetron is scanned about the back of a target in a selected complex path having radial components, the erosion profile has a form depending upon the selection of paths. A radial erosion rate profile for a given magnetron is measured. Periodically during scanning, an erosion profile is calculated from the measured erosion rate profile, the time the magnetron spends at different radii, and the target power. The calculated erosion profile may be used to indicate when erosion has become excessive at any location prompting target replacement or to adjust the height of the magnetron above the target for repeated scans. In another aspect of the invention, the magnetron height is dynamically adjusted during a scan to compensate for erosion. The compensation may be based on the calculated erosion profile or on feedback control of the present value of the target voltage for a constant-power target supply.

Abstract translation: 当在选定的具有径向分量的复合路径中围绕目标的背面扫描磁控管时，侵蚀曲线具有取决于路径选择的形式。 测量给定磁控管的径向侵蚀速率曲线。 在扫描期间，从测量的侵蚀速率曲线，磁控管在不同半径处花费的时间和目标功率计算出侵蚀曲线。 计算的侵蚀曲线可用于指示在任何位置的侵蚀已经变得过大，促使目标更换，或者调整靶上方磁控管的高度以重复扫描。 在本发明的另一方面，在扫描期间磁控管高度被动态地调节以补偿侵蚀。 补偿可以基于所计算的侵蚀曲线或对于恒定功率目标电源的目标电压的当前值的反馈控制。

公开(公告)号：US10047430B2

公开(公告)日：2018-08-14

申请号：US14205260

申请日：2014-03-11

Applicant: Applied Materials, Inc.

Inventor： Peijun Ding ,  Rong Tao ,  Zheng Xu ,  Daniel C. Lubben ,  Suraj Rengarajan ,  Michael A. Miller ,  Arvind Sundarrajan ,  Xianmin Tang ,  John C. Forster ,  Jianming Fu ,  Roderick C. Mosely ,  Fusen Chen ,  Praburam Gopalraja

IPC: C23C14/34 ,  H01J37/34 ,  C23C14/04 ,  C23C14/35 ,  C23C14/56 ,  H01J37/32 ,  H01L21/285 ,  H01L21/768

CPC classification number: C23C14/046 ,  C23C14/345 ,  C23C14/3457 ,  C23C14/35 ,  C23C14/358 ,  C23C14/564 ,  C23C14/568 ,  H01J37/321 ,  H01J37/3402 ,  H01J37/3408 ,  H01J37/3441 ,  H01J2237/3327 ,  H01L21/2855 ,  H01L21/76805 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76865 ,  H01L21/76868 ,  H01L21/76871 ,  H01L21/76873 ,  H01L21/76876 ,  H01L21/76877 ,  H01L2221/1089

Abstract: A magnetron sputter reactor for sputtering deposition materials such as tantalum, tantalum nitride and copper, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and inductively coupled plasma (ICP) sputtering are promoted, either together or alternately, in the same or different chambers. Also, bottom coverage may be thinned or eliminated by ICP resputtering in one chamber and SIP in another. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. ICP is provided by one or more RF coils which inductively couple RF energy into a plasma. The combined SIP-ICP layers can act as a liner or barrier or seed or nucleation layer for hole. In addition, an RF coil may be sputtered to provide protective material during ICP resputtering. In another chamber an array of auxiliary magnets positioned along sidewalls of a magnetron sputter reactor on a side towards the wafer from the target. The magnetron preferably is a small, strong one having a stronger outer pole of a first magnetic polarity surrounding a weaker outer pole of a second magnetic polarity and rotates about the central axis of the chamber. The auxiliary magnets preferably have the first magnetic polarity to draw the unbalanced magnetic field component toward the wafer. The auxiliary magnets may be either permanent magnets or electromagnets.

公开(公告)号：US08764949B2

公开(公告)日：2014-07-01

申请号：US13898311

申请日：2013-05-20

Applicant: Applied Materials, Inc.

Inventor： Keith A. Miller ,  Daniel C. Lubben

IPC: C23C14/00 ,  C23C14/32 ,  C25B9/00 ,  C25B11/00 ,  C25B13/00

CPC classification number: C23C14/35 ,  H01J37/3408 ,  H01J37/3482

Abstract: When a magnetron is scanned about the back of a target in a selected complex path having radial components, the erosion profile has a form depending upon the selection of paths. A radial erosion rate profile for a given magnetron is measured. Periodically during scanning, an erosion profile is calculated from the measured erosion rate profile, the time the magnetron spends at different radii, and the target power. The calculated erosion profile may be used to indicate when erosion has become excessive at any location prompting target replacement or to adjust the height of the magnetron above the target for repeated scans. In another aspect of the invention, the magnetron height is dynamically adjusted during a scan to compensate for erosion. The compensation may be based on the calculated erosion profile or on feedback control of the present value of the target voltage for a constant-power target supply.

Abstract translation: 当在选定的具有径向分量的复合路径中围绕目标的背面扫描磁控管时，侵蚀曲线具有取决于路径选择的形式。 测量给定磁控管的径向侵蚀速率曲线。 在扫描期间，从测量的侵蚀速率曲线，磁控管在不同半径处花费的时间和目标功率计算出侵蚀曲线。 所计算的侵蚀曲线可用于指示在任何位置的侵蚀已经变得过度，促使目标更换，或者调整靶上方磁控管的高度以重复扫描。 在本发明的另一方面，在扫描期间磁控管高度被动态地调节以补偿侵蚀。 补偿可以基于所计算的侵蚀曲线或对于恒定功率目标电源的目标电压的当前值的反馈控制。