公开(公告)号：US20170229315A1

公开(公告)日：2017-08-10

申请号：US15415348

申请日：2017-01-25

Applicant: Applied Materials, Inc.

Inventor： Ying ZHANG ,  Qingjun ZHOU ,  Jonathan Sungehul KIM

IPC: H01L21/3105 ,  H01L21/311 ,  H01L21/67

CPC classification number: H01L21/3105 ,  H01L21/31116 ,  H01L21/67167 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67207

Abstract: Embodiments described herein generally relate to a substrate processing system, such as an etch processing system. In one embodiment, a substrate processing system is disclosed herein. The substrate processing system includes a transfer chamber and a plurality of process chambers coupled to the transfer chamber. The plurality of process chambers includes a first process chamber, a second process chamber, and a third process chamber. The first process chamber is configured to directionally modify a surface of a film stack formed on the substrate. The second process chamber is configured to deposit an etchant on the surface of the film stack. The third process chamber is configured to expose the film stack to a high-temperature sublimation process.

公开(公告)号：US20190043723A1

公开(公告)日：2019-02-07

申请号：US16035994

申请日：2018-07-16

Applicant: Applied Materials, Inc.

Inventor： Hailong ZHOU ,  Yangchung LEE ,  Chain LEE ,  Hui SUN ,  Jonathan Sungehul KIM

IPC: H01L21/033 ,  H01L21/3213 ,  H01L21/311

Abstract: Implementations described herein generally relate to an etching process for etching materials with high selectivity. In one implementation, a method of etching a gate material to form features in the gate material is provided. The method includes (a) exposing a cobalt mask layer to a fluorine-containing gas mixture in a first mode to form a passivation film on the cobalt mask layer. The cobalt mask layer exposes a portion of a gate material disposed on a substrate. The method further comprises (b) exposing the portion of the gate material to an etching gas mixture in a second mode to etch the portion of the gate material. The portion of the gate material is etched through openings defined in the cobalt mask layer and the portion of the gate material is etched at a greater rate than the cobalt mask layer having the passivation layer disposed thereon.

公开(公告)号：US20200373149A1

公开(公告)日：2020-11-26

申请号：US16831217

申请日：2020-03-26

Applicant: Applied Materials, Inc.

Inventor： Sang Wook PARK ,  Xiaorui CUI ,  Sunil SRINIVASAN ,  Rajinder DHINDSA ,  Zhonghua YAO ,  Lin YU ,  Olivier LUERE ,  Jonathan Sungehul KIM

IPC: H01L21/02 ,  H01L21/311

Abstract: Embodiments of the present disclosure provide methods and apparatus for forming a desired material layer on a substrate between, during, prior to or after a patterning process. In one embodiment, a method for forming a material layer on the substrate includes pulsing a first gas precursor comprising an organic silicon compound onto a surface of the substrate. The method also includes disposing a first element from the first gas precursor onto the surface of the substrate. The method further includes maintaining a substrate temperature less than about 110 degrees Celsius while disposing the first element. A second gas precursor is pulsed onto the surface of the substrate. Additionally, the method includes disposing a second element from the second gas precursor to the first element on the surface of the substrate.

公开(公告)号：US20200027717A1

公开(公告)日：2020-01-23

申请号：US16391219

申请日：2019-04-22

Applicant: Applied Materials, Inc.

Inventor： Sang Wook PARK ,  Sunil SRINIVASAN ,  Rajinder DHINDSA ,  Jonathan Sungehul KIM ,  Lin YU ,  Zhonghua YAO ,  Olivier LUERE

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/40 ,  C23C16/34

Abstract: Embodiments of the present disclosure provide methods and apparatus for forming a desired material layer on a substrate between, during, prior to or after a patterning process. In one embodiment, a method for forming a material layer on a substrate includes pulsing a first gas precursor onto a surface of a substrate, attaching a first element from the first gas precursor onto the surface of the substrate, maintaining a substrate temperature less than about 110 degrees Celsius, pulsing a second gas precursor onto the surface of the substrate, and attaching a second element from the second gas precursor to the first element on the surface of the substrate.