公开(公告)号：US12033964B2

公开(公告)日：2024-07-09

申请号：US17411599

申请日：2021-08-25

Applicant: Applied Materials, Inc.

Inventor： Tyler Sherwood ,  Joseph F. Salfelder ,  Ki Cheol Ahn ,  Kai Ma ,  Raghav Sreenivasan ,  Jason Appell

IPC: H01L23/00 ,  H01L21/306 ,  H01L21/321 ,  H01L21/768

CPC classification number: H01L24/03 ,  H01L21/30625 ,  H01L21/3212 ,  H01L21/7684 ,  H01L24/05 ,  H01L24/27 ,  H01L24/29 ,  H01L2224/03616 ,  H01L2224/05073 ,  H01L2224/05647 ,  H01L2224/27616 ,  H01L2224/29186

Abstract: Methods of semiconductor processing may include contacting a substrate with a first slurry and a first platen. The substrate may include silicon oxide defining one or more features, a liner extending across the silicon oxide and within the one or more features, and a copper-containing layer deposited on the liner and extending within the one or more features. The first slurry and the first platen may remove a first portion of the copper-containing layer. The methods may include contacting the substrate with a second slurry and a second platen, which may remove at least a portion of the liner. The methods may include contacting the substrate with a third slurry and a third platen, which may remove a second portion of the copper-containing layer. The methods may include contacting the substrate with a fourth slurry and a fourth platen, which may remove at least a portion of the silicon oxide.

公开(公告)号：US20220310531A1

公开(公告)日：2022-09-29

申请号：US17214411

申请日：2021-03-26

Applicant: Applied Materials, Inc.

Inventor： Amirhasan Nourbakhsh ,  Lan Yu ,  Joseph F. Salfelder ,  Ki Cheol Ahn ,  Tyler Sherwood ,  Siddarth Krishnan ,  Michael Jason Fronckowiak ,  Xing Chen

IPC: H01L23/00 ,  H01L21/311 ,  H01L21/308 ,  H01L21/304

Abstract: Exemplary methods of processing a semiconductor substrate may include forming a layer of dielectric material on the semiconductor substrate. The methods may include performing an edge exclusion removal of the layer of dielectric material. The methods may include forming a mask material on the semiconductor substrate. The mask material may contact the dielectric material at an edge region of the semiconductor substrate. The methods may include patterning an opening in the mask material overlying a first surface of the semiconductor substrate. The methods may include etching one or more trenches through the semiconductor substrate.

公开(公告)号：US11830824B2

公开(公告)日：2023-11-28

申请号：US17214411

申请日：2021-03-26

Applicant: Applied Materials, Inc.

Inventor： Amirhasan Nourbakhsh ,  Lan Yu ,  Joseph F. Salfelder ,  Ki Cheol Ahn ,  Tyler Sherwood ,  Siddarth Krishnan ,  Michael Jason Fronckowiak ,  Xing Chen

IPC: H01L23/00 ,  H01L21/304 ,  H01L21/308 ,  H01L21/311

CPC classification number: H01L23/562 ,  H01L21/304 ,  H01L21/3086 ,  H01L21/31111

Abstract: Exemplary methods of processing a semiconductor substrate may include forming a layer of dielectric material on the semiconductor substrate. The methods may include performing an edge exclusion removal of the layer of dielectric material. The methods may include forming a mask material on the semiconductor substrate. The mask material may contact the dielectric material at an edge region of the semiconductor substrate. The methods may include patterning an opening in the mask material overlying a first surface of the semiconductor substrate. The methods may include etching one or more trenches through the semiconductor substrate.

公开(公告)号：US20230066610A1

公开(公告)日：2023-03-02

申请号：US17411599

申请日：2021-08-25

Applicant: Applied Materials, Inc.

Inventor： Tyler Sherwood ,  Joseph F. Salfelder ,  Ki Cheol Ahn ,  Kai Ma ,  Raghav Sreenivasan ,  Jason Appell

IPC: H01L23/00

Abstract: Methods of semiconductor processing may include contacting a substrate with a first slurry and a first platen. The substrate may include silicon oxide defining one or more features, a liner extending across the silicon oxide and within the one or more features, and a copper-containing layer deposited on the liner and extending within the one or more features. The first slurry and the first platen may remove a first portion of the copper-containing layer. The methods may include contacting the substrate with a second slurry and a second platen, which may remove at least a portion of the liner. The methods may include contacting the substrate with a third slurry and a third platen, which may remove a second portion of the copper-containing layer. The methods may include contacting the substrate with a fourth slurry and a fourth platen, which may remove at least a portion of the silicon oxide.