公开(公告)号：US11429026B2

公开(公告)日：2022-08-30

申请号：US16825393

申请日：2020-03-20

Applicant: Applied Materials, Inc.

Inventor： Huixiong Dai ,  Mangesh Ashok Bangar ,  Srinivas D. Nemani ,  Christopher S. Ngai ,  Ellie Y. Yieh

IPC: G03F7/20 ,  H01L21/027 ,  G03F7/16 ,  G03F7/38 ,  G03F7/30

Abstract: A method for enhancing the depth of focus process window during a lithography process includes applying a photoresist layer comprising a photoacid generator on a material layer disposed on a substrate, exposing a first portion of the photoresist layer unprotected by a photomask to light radiation in a lithographic exposure process, providing a thermal energy to the photoresist layer in a post-exposure baking process, applying an electric field or a magnetic field while performing the post-exposure baking process, and dynamically changing a frequency of the electric field as generated while providing the thermal energy to the photoresist layer.

公开(公告)号：US11609505B2

公开(公告)日：2023-03-21

申请号：US17222696

申请日：2021-04-05

Applicant: Applied Materials, Inc.

Inventor： Mangesh Ashok Bangar ,  Gautam Pisharody ,  Lancelot Huang ,  Alan L. Tso ,  Douglas A. Buchberger, Jr. ,  Huixiong Dai ,  Dmitry Lubomirsky ,  Srinivas D. Nemani ,  Christopher Siu Wing Ngai

IPC: G03F7/20 ,  G01N27/10

Abstract: Embodiments of the present disclosure generally relate to apparatus and methods for verification and re-use of process fluids. The apparatus generally includes a tool for performing lithography, and a recirculation path coupled to the tool. The recirculation path generally includes a collection unit coupled at first end to a first end of the tool, and a probe coupled at a first end to a second end of the collection unit, the probe for determining one or more characteristics of a fluid flowing from the tool. The recirculation path of the apparatus further generally includes a purification unit coupled at a first end to a third end of the collection unit, the purification unit further coupled at a second end to a second end of the probe, the purification unit for changing a characteristic of the fluid.

公开(公告)号：US12204246B2

公开(公告)日：2025-01-21

申请号：US17342176

申请日：2021-06-08

Applicant: Applied Materials, Inc.

Inventor： Huixiong Dai ,  Mangesh Ashok Bangar ,  Srinivas D. Nemani ,  Steven Hiloong Welch ,  Ellie Y. Yieh ,  Dmitry Lubomirsky

IPC: G03F7/11 ,  C23C16/06 ,  G03F7/004 ,  G03F7/038 ,  G03F7/16 ,  G03F7/32 ,  G03F7/38 ,  G03F7/40

Abstract: A method for processing a substrate is described. The method includes forming a metal containing resist layer onto a substrate, patterning the metal containing resist layer, and performing a post exposure bake on the metal containing resist layer. The post exposure bake on the metal containing resist layer is a field guided post exposure bake operation and includes the use of an electric field to guide the ions or charged species within the metal containing resist layer. The field guided post exposure bake operation may be paired with a post development field guided bake operation.

公开(公告)号：US11880137B2

公开(公告)日：2024-01-23

申请号：US18188676

申请日：2023-03-23

Applicant: Applied Materials, Inc.

Inventor： Huixiong Dai ,  Mangesh Ashok Bangar ,  Srinivas D. Nemani ,  Ellie Y. Yieh ,  Steven Hiloong Welch ,  Christopher S. Ngai

IPC: G03F7/09 ,  G03F7/20 ,  G03F7/16 ,  G03F7/11 ,  G03F7/004 ,  G03F7/039 ,  G03F7/40

CPC classification number: G03F7/094 ,  G03F7/0045 ,  G03F7/0392 ,  G03F7/11 ,  G03F7/168 ,  G03F7/203 ,  G03F7/2022 ,  G03F7/164 ,  G03F7/40

Abstract: Methods and apparatuses for minimizing line edge/width roughness in lines formed by photolithography are provided. In one example, a method of processing a substrate includes applying a photoresist layer comprising a photoacid generator to on a multi-layer disposed on a substrate, wherein the multi-layer comprises an underlayer formed from an organic material, inorganic material, or a mixture of organic and inorganic materials, exposing a first portion of the photoresist layer unprotected by a photomask to a radiation light in a lithographic exposure process, and applying an electric field or a magnetic field to alter movement of photoacid generated from the photoacid generator substantially in a vertical direction.

公开(公告)号：US12085858B2

公开(公告)日：2024-09-10

申请号：US16825388

申请日：2020-03-20

Applicant: Applied Materials, Inc.

Inventor： Huixiong Dai ,  Srinivas D. Nemani ,  Steven Hiloong Welch ,  Mangesh Ashok Bangar ,  Ellie Y. Yieh

IPC: G03F7/20 ,  G03F7/16 ,  G03F7/38 ,  H01L21/027 ,  H01L21/266 ,  H01L21/311

CPC classification number: G03F7/20 ,  G03F7/16 ,  G03F7/38 ,  H01L21/0273 ,  H01L21/266 ,  H01L21/31133

Abstract: A method for enhancing a photoresist profile control includes applying a photoresist layer comprising a photoacid generator on an underlayer disposed on a material layer, exposing a first portion of the photoresist layer unprotected by a photomask to light radiation in a lithographic exposure process, providing a thermal energy to the photoresist layer in a post-exposure baking process, applying an electric field or a magnetic field while performing the post-exposure baking process, and drifting photoacid from the photoresist layer to a predetermined portion of the underlayer under the first portion of the photoresist layer.

公开(公告)号：US11914299B2

公开(公告)日：2024-02-27

申请号：US17898216

申请日：2022-08-29

Applicant: Applied Materials, Inc.

Inventor： Huixiong Dai ,  Mangesh Ashok Bangar ,  Srinivas D. Nemani ,  Christopher S. Ngai ,  Ellie Y. Yieh

IPC: G03F7/20 ,  H01L21/027 ,  G03F7/30 ,  G03F7/38 ,  G03F7/16

CPC classification number: G03F7/20 ,  G03F7/16 ,  G03F7/30 ,  G03F7/38 ,  H01L21/0274

Abstract: A method for enhancing the depth of focus process window during a lithography process includes applying a photoresist layer comprising a photoacid generator on a material layer disposed on a substrate, exposing a first portion of the photoresist layer unprotected by a photomask to light radiation in a lithographic exposure process, providing a thermal energy to the photoresist layer in a post-exposure baking process, applying an electric field or a magnetic field while performing the post-exposure baking process, and dynamically changing a frequency of the electric field as generated while providing the thermal energy to the photoresist layer.

公开(公告)号：US20210294216A1

公开(公告)日：2021-09-23

申请号：US16825393

申请日：2020-03-20

Applicant: Applied Materials, Inc.

Inventor： Huixiong Dai ,  Mangesh Ashok Bangar ,  Srinivas D. Nemani ,  Christopher S. Ngai ,  Ellie Y. Yieh

IPC: G03F7/20 ,  H01L21/027 ,  G03F7/16 ,  G03F7/38 ,  G03F7/30

Abstract: A method for enhancing the depth of focus process window during a lithography process includes applying a photoresist layer comprising a photoacid generator on a material layer disposed on a substrate, exposing a first portion of the photoresist layer unprotected by a photomask to light radiation in a lithographic exposure process, providing a thermal energy to the photoresist layer in a post-exposure baking process, applying an electric field or a magnetic field while performing the post-exposure baking process, and dynamically changing a frequency of the electric field as generated while providing the thermal energy to the photoresist layer.