公开(公告)号：US11088005B2

公开(公告)日：2021-08-10

申请号：US16421301

申请日：2019-05-23

Applicant: Applied Materials, Inc.

Inventor： Vijay D. Parkhe ,  Konstantin Makhratchev ,  Jason Della Rosa ,  Hamid Noobakhsh ,  Brad L. Mays ,  Douglas A. Buchberger, Jr.

IPC: H01L21/683 ,  H01T23/00 ,  H01L21/67

Abstract: A substrate support assembly includes a ceramic puck and a thermally conductive base having an upper surface that is bonded to the ceramic puck. The thermally conductive base includes a plurality of thermal zones and a thermally managed material embedded in the thermally conductive base at the upper surface of the thermally conductive base in one or more of the plurality of thermal zones. The thermally managed material has different thermal conductive properties along a first direction and a second direction. The thermally conductive base further includes a plurality of thermal isolators that extend from the upper surface of the thermally conductive base towards a lower surface of the thermally conductive base between two or more of the plurality of thermal zones without contacting the lower surface of the thermally conductive base. Each of the plurality of thermal isolators provides a degree of thermal isolation.

公开(公告)号：US09991148B2

公开(公告)日：2018-06-05

申请号：US15595870

申请日：2017-05-15

Applicant: Applied Materials, Inc.

Inventor： Vijay D. Parkhe ,  Konstantin Makhratchev ,  Jason Della Rosa ,  Hamid Noorbakhsh ,  Brad L. Mays ,  Douglas A. Buchberger, Jr.

IPC: H01L21/683 ,  H01T23/00 ,  H01L21/67

CPC classification number: H01L21/6833 ,  H01L21/67103 ,  H01L21/6831 ,  Y10T156/10

Abstract: A substrate support assembly includes a ceramic puck and a thermally conductive base having an upper surface that is bonded to a lower surface of the ceramic puck. The thermally conductive base includes a plurality of thermal zones and a plurality of thermal isolators that extend from the upper surface of the thermally conductive base towards a lower surface of the thermally conductive base, wherein each of the plurality of thermal isolators provides approximate thermal isolation between two of the plurality of thermal zones at the upper surface of the thermally conductive base.

公开(公告)号：US12181801B2

公开(公告)日：2024-12-31

申请号：US17531108

申请日：2021-11-19

Applicant: Applied Materials, Inc.

Inventor： Dmitry Lubomirsky ,  Douglas A. Buchberger, Jr. ,  Qiwei Liang ,  Hyunjun Kim ,  Ellie Y. Yieh

IPC: G03F7/38 ,  H01J37/32

Abstract: A method and apparatus for performing post-exposure bake operations is described herein. The apparatus includes a plate stack and enables formation of a first high ion density plasma before the ion concentration within the first high ion density plasma is reduced using a diffuser to form a second low ion density plasma. The second low ion density plasma is an electron cloud or a dark plasma. An electric field is formed between a substrate support and the diffuser and through the second low ion density plasma during post-exposure bake of a substrate disposed on the substrate support. The second low ion density plasma electrically couples the substrate support and the diffuser during application of the electric field. The plate stack is equipped with power supplies and insulators to enable the formation or modification of a plasma within three regions of a process chamber.

公开(公告)号：US11934103B2

公开(公告)日：2024-03-19

申请号：US17668080

申请日：2022-02-09

Applicant: Applied Materials, Inc.

Inventor： Douglas A. Buchberger, Jr. ,  Dmitry Lubomirsky ,  John O. Dukovic ,  Srinivas D. Nemani

IPC: G03F7/38

CPC classification number: G03F7/38

Abstract: A method and apparatus for applying an electric field and/or a magnetic field to a photoresist layer without air gap intervention during photolithography processes is provided herein. The method and apparatus include a transfer device and a plurality of modules. The transfer device is configured to rotate a plurality of substrates between each of the modules, wherein one module includes a heating pedestal and another module includes a cooling pedestal. One module is utilized for inserting and removing the substrates from the system. At least the heating module is able to be sealed and filled with a process volume before applying the electric field.

公开(公告)号：US10546728B2

公开(公告)日：2020-01-28

申请号：US15199046

申请日：2016-06-30

Applicant: Applied Materials, Inc.

Inventor： James D. Carducci ,  Hamid Tavassoli ,  Ajit Balakrishna ,  Zhigang Chen ,  Andrew Nguyen ,  Douglas A. Buchberger, Jr. ,  Kartik Ramaswamy ,  Shahid Rauf ,  Kenneth S. Collins

IPC: H01J37/32 ,  H05H1/46

Abstract: Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.

公开(公告)号：US10304715B2

公开(公告)日：2019-05-28

申请号：US15977718

申请日：2018-05-11

Applicant: Applied Materials, Inc.

Inventor： Vijay D. Parkhe ,  Konstantin Makhratchev ,  Jason Della Rosa ,  Hamid Noorbakhsh ,  Brad L. Mays ,  Douglas A. Buchberger, Jr.

IPC: H01L21/683 ,  H01T23/00 ,  H01L21/67

Abstract: A substrate support assembly includes a ceramic puck and a thermally conductive base having an upper surface that is bonded to a lower surface of the ceramic puck. Trenches are formed in the thermally conductive base approximately concentric around a center of the thermally conductive base. The trenches extend from the upper surface towards a lower surface of the thermally conductive base without contacting the lower surface of the thermally conductive base. The thermally conductive base includes thermal zones. The substrate support assembly further includes a thermally insulating material disposed in the trenches. The thermally insulating material in a trench of the trenches provides a degree of thermal isolation between two of the thermal zones separated by the trench at the upper surface of the thermally conductive base.

公开(公告)号：US10131994B2

公开(公告)日：2018-11-20

申请号：US13666245

申请日：2012-11-01

Applicant: APPLIED MATERIALS, INC.

Inventor： Andrew Nguyen ,  Kenneth S. Collins ,  Kartik Ramaswamy ,  Shahid Rauf ,  James D. Carducci ,  Douglas A. Buchberger, Jr. ,  Ankur Agarwal ,  Jason A. Kenney ,  Leonid Dorf ,  Ajit Balakrishna ,  Richard Fovell

IPC: C23C16/00 ,  H01L21/306 ,  C23F1/08 ,  C23C14/28 ,  H01J37/32 ,  H05H1/46 ,  B01J12/00

Abstract: A plasma reactor for processing a workpiece includes a reactor chamber having a ceiling and a sidewall and a workpiece support facing the ceiling and defining a processing region, and a pair of concentric independently excited RF coil antennas overlying the ceiling and a side RF coil concentric with the side wall and facing the side wall below the ceiling, and being excited independently.

公开(公告)号：US09666466B2

公开(公告)日：2017-05-30

申请号：US14268994

申请日：2014-05-02

Applicant: Applied Materials, Inc.

Inventor： Vijay D. Parkhe ,  Konstantin Makhratchev ,  Jason Della Rosa ,  Hamid Noorbakhsh ,  Brad L. Mays ,  Douglas A. Buchberger, Jr.

IPC: H01L21/683 ,  H01T23/00 ,  H01L21/67

CPC classification number: H01L21/6833 ,  H01L21/67103 ,  H01L21/6831 ,  Y10T156/10

Abstract: A substrate support assembly includes a ceramic puck and a thermally conductive base having an upper surface that is bonded to a lower surface of the ceramic puck. The thermally conductive base includes a plurality of thermal zones and a plurality of thermal isolators that extend from the upper surface of the thermally conductive base towards a lower surface of the thermally conductive base, wherein each of the plurality of thermal isolators provides approximate thermal isolation between two of the plurality of thermal zones at the upper surface of the thermally conductive base.

公开(公告)号：US09570275B2

公开(公告)日：2017-02-14

申请号：US14531831

申请日：2014-11-03

Applicant: Applied Materials, Inc.

Inventor： James D. Carducci ,  Olga Regelman ,  Kallol Bera ,  Douglas A. Buchberger, Jr. ,  Paul Brillhart

IPC: B05B1/14 ,  B05B1/24 ,  H01J37/32 ,  C23C16/44 ,  C23C16/455 ,  B32B43/00

CPC classification number: H01J37/3244 ,  B32B43/00 ,  C23C16/4412 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/45591 ,  H01J37/32449 ,  H01J37/32724 ,  H01J2237/3343 ,  Y10T29/49815

Abstract: The present disclosure generally comprises a heated showerhead assembly that may be used to supply processing gases into a processing chamber. The processing chamber may be an etching chamber. When processing gas is evacuated from the processing chamber, the uniform processing of the substrate may be difficult. As the processing gas is pulled away from the substrate and towards the vacuum pump, the plasma, in the case of etching, may not be uniform across the substrate. Uneven plasma may lead to uneven etching. To prevent uneven etching, the showerhead assembly may be separated into two zones each having independently controllable gas introduction and temperature control. The first zone corresponds to the perimeter of the substrate while the second zone corresponds to the center of the substrate. By independently controlling the temperature and the gas flow through the showerhead zones, etching uniformity of the substrate may be increased.

Abstract translation: 本公开通常包括可用于将处理气体供应到处理室中的加热喷头组件。 处理室可以是蚀刻室。 当处理气体从处理室排出时，衬底的均匀处理可能是困难的。 当处理气体从衬底被拉离并且朝向真空泵时，在蚀刻的情况下，等离子体在衬底上可能不均匀。 不均匀的等离子体可能导致不均匀的蚀刻。 为了防止不均匀的蚀刻，喷头组件可以分成两个区域，每个区域具有独立可控的气体引入和温度控制。 第一区域对应于衬底的周边，而第二区域对应于衬底的中心。 通过独立地控制温度和通过喷头区域的气体流动，可以增加基板的蚀刻均匀性。

公开(公告)号：US11631591B2

公开(公告)日：2023-04-18

申请号：US17408943

申请日：2021-08-23

Applicant: Applied Materials, Inc.

Inventor： Bhargav S. Citla ,  Jethro Tannos ,  Jingyi Li ,  Douglas A. Buchberger, Jr. ,  Zhong Qiang Hua ,  Srinivas D. Nemani ,  Ellie Y. Yieh

IPC: C23C16/505 ,  H01L21/311 ,  H01L21/762 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/67 ,  C23C16/515 ,  H01L21/02 ,  C23C16/509 ,  C23C16/517

Abstract: Methods for depositing a dielectric material using RF bias pulses along with remote plasma source deposition for manufacturing semiconductor devices, particularly for filling openings with high aspect ratios in semiconductor applications are provided. For example, a method of depositing a dielectric material includes providing a gas mixture into a processing chamber having a substrate disposed therein, forming a remote plasma in a remote plasma source and delivering the remote plasma to an interior processing region defined in the processing chamber, applying a RF bias power to the processing chamber in pulsed mode, and forming a dielectric material in an opening defined in a material layer disposed on the substrate in the presence of the gas mixture and the remote plasma.