公开(公告)号：US11651932B1

公开(公告)日：2023-05-16

申请号：US17510996

申请日：2021-10-26

Applicant: Applied Materials, Inc.

Inventor： Alexandre Likhanskii ,  Jay T. Scheuer ,  Sudhakar Mahalingam ,  Nevin Clay

IPC: H01J37/08 ,  H01J37/05 ,  H01J37/317

CPC classification number: H01J37/08 ,  H01J37/05 ,  H01J37/3171

Abstract: An ion source capable of extracting a ribbon ion beam with improved vertical angular uniformity is disclosed. The extraction plate and extraction optics are designed such that there is at least one non-uniform gap between adjacent components. A non-uniform gap may be effective in reducing angular spread non-uniformity of the extracted ribbon ion beam. Specifically, for a given gap in the Z direction, ions extracted from regions with lower plasma density may have more vertical angular spread. A larger gap in the Z direction between components in this region may make the vertical angular spread closer to the vertical angular spread of ions extracted from regions with higher plasma density. The non-uniform gap may be created by having an extraction plate that is flat or curved and electrodes that are flat, convex or concave. In certain embodiments, the non-uniform gap is located between the extraction plate and the suppression electrode.

公开(公告)号：US11810754B2

公开(公告)日：2023-11-07

申请号：US17546667

申请日：2021-12-09

Applicant: Applied Materials, Inc.

Inventor： Eric D. Hermanson ,  Nevin Clay ,  Antonella Cucchetti ,  Philip Layne ,  Sudhakar Mahalingam ,  Michael Simmons

IPC: H01J37/304

CPC classification number: H01J37/3045 ,  H01J2237/2446 ,  H01J2237/24578

Abstract: A system and method for optimizing a ribbon ion beam in a beam line implantation system is disclosed. The system includes a calibration sensor disposed in the beam line after the mass analyzer. The calibration sensor is able to measure both the total current of the ribbon ion beam, as well as provide information about its vertical position. Information from the calibration sensor can then be utilized by a controller to adjust various parameters to improve the density as well as the vertical position. In some embodiments, the calibration sensor may include a plurality of Faraday sensors, where, both the total current and the vertical position of the ion beam can be determined. Furthermore, the focus of the ion beam can be estimated based on the distribution of the current in the height direction.

公开(公告)号：US20230131410A1

公开(公告)日：2023-04-27

申请号：US17510996

申请日：2021-10-26

Applicant: Applied Materials, Inc.

Inventor： Alexandre Likhanskii ,  Jay T. Scheuer ,  Sudhakar Mahalingam ,  Nevin Clay

IPC: H01J37/08 ,  H01J37/317 ,  H01J37/05

Abstract: An ion source capable of extracting a ribbon ion beam with improved vertical angular uniformity is disclosed. The extraction plate and extraction optics are designed such that there is at least one non-uniform gap between adjacent components. A non-uniform gap may be effective in reducing angular spread non-uniformity of the extracted ribbon ion beam. Specifically, for a given gap in the Z direction, ions extracted from regions with lower plasma density may have more vertical angular spread. A larger gap in the Z direction between components in this region may make the vertical angular spread closer to the vertical angular spread of ions extracted from regions with higher plasma density. The non-uniform gap may be created by having an extraction plate that is flat or curved and electrodes that are flat, convex or concave. In certain embodiments, the non-uniform gap is located between the extraction plate and the suppression electrode.

公开(公告)号：US11749500B1

公开(公告)日：2023-09-05

申请号：US17582655

申请日：2022-01-24

Applicant: Applied Materials, Inc.

Inventor： Nevin Clay ,  David Roger Timberlake ,  Christopher W. Campbell

IPC: H01J37/304 ,  H01J37/317 ,  H01J37/20

CPC classification number: H01J37/304 ,  H01J37/20 ,  H01J37/3171 ,  H01J2237/20228 ,  H01J2237/24564 ,  H01J2237/24585

Abstract: A system and method for controlling an amount of outgassing caused by implanting ions into a photoresist disposed on a workpiece. The amount of outgassing is based on the species being implanted, the type of photoresist, the energy of the implant, and the amount of dose that has already been implanted, among other effects. By controlling the effective beam current, the amount of outgassing may be maintained below a predetermined threshold. By developing and utilizing the relationship between effective beam current, dose completed and rate of outgassing, the effective beam current may be controlled more precisely to implant the workpiece in the most efficient manner while remaining below the predetermined outgassing threshold.

公开(公告)号：US20230238214A1

公开(公告)日：2023-07-27

申请号：US17582655

申请日：2022-01-24

Applicant: Applied Materials, Inc.

Inventor： Nevin Clay ,  David Roger Timberlake ,  Christopher R. Campbell

IPC: H01J37/304 ,  H01J37/317 ,  H01J37/20

CPC classification number: H01J37/304 ,  H01J37/20 ,  H01J37/3171 ,  H01J2237/20228 ,  H01J2237/24564 ,  H01J2237/24585

Abstract: A system and method for controlling an amount of outgassing caused by implanting ions into a photoresist disposed on a workpiece. The amount of outgassing is based on the species being implanted, the type of photoresist, the energy of the implant, and the amount of dose that has already been implanted, among other effects. By controlling the effective beam current, the amount of outgassing may be maintained below a predetermined threshold. By developing and utilizing the relationship between effective beam current, dose completed and rate of outgassing, the effective beam current may be controlled more precisely to implant the workpiece in the most efficient manner while remaining below the predetermined outgassing threshold.

公开(公告)号：US20230187171A1

公开(公告)日：2023-06-15

申请号：US17546667

申请日：2021-12-09

Applicant: Applied Materials, Inc.

Inventor： Eric D. Hermanson ,  Nevin Clay ,  Antonella Cucchetti ,  Philip Layne ,  Sudhakar Mahalingam ,  Michael Simmons

IPC: H01J37/304

CPC classification number: H01J37/3045 ,  H01J2237/2446 ,  H01J2237/24578

Abstract: A system and method for optimizing a ribbon ion beam in a beam line implantation system is disclosed. The system includes a calibration sensor disposed in the beam line after the mass analyzer. The calibration sensor is able to measure both the total current of the ribbon ion beam, as well as provide information about its vertical position. Information from the calibration sensor can then be utilized by a controller to adjust various parameters to improve the density as well as the vertical position. In some embodiments, the calibration sensor may include a plurality of Faraday sensors, where, both the total current and the vertical position of the ion beam can be determined. Furthermore, the focus of the ion beam can be estimated based on the distribution of the current in the height direction.