公开(公告)号：US20230010978A1

公开(公告)日：2023-01-12

申请号：US17373161

申请日：2021-07-12

Applicant: Applied Materials, Inc.

Inventor： Baiwei Wang ,  Xiaolin C. Chen ,  Rohan Puligoru Reddy ,  Oliver Jan ,  Zhenjiang Cui ,  Anchuan Wang

IPC: H01L21/3213 ,  H01J37/32

Abstract: Exemplary etching methods may include flowing an oxygen-containing precursor into a processing region of a semiconductor processing chamber. The methods may include contacting a substrate housed in the processing region with the oxygen-containing precursor. The substrate may include an exposed region of a transition metal nitride and an exposed region of a metal. The contacting may form an oxidized portion of the transition metal nitride and an oxidized portion of the metal. The methods may include forming a plasma of a fluorine-containing precursor and a hydrogen-containing precursor to produce fluorine-containing plasma effluents. The methods may include removing the oxidized portion of the transition metal nitride to expose a non-oxidized portion of the transition metal nitride. The methods may include forming a plasma of a chlorine-containing precursor to produce chlorine-containing plasma effluents. The methods may include removing the non-oxidized portion of the transition metal nitride.

公开(公告)号：US20220344172A1

公开(公告)日：2022-10-27

申请号：US17240149

申请日：2021-04-26

Applicant: Applied Materials, Inc.

Inventor： Baiwei Wang ,  Xiaolin C. Chen ,  Rohan Puligoru Reddy ,  Oliver Jan ,  Zhenjiang Cui ,  Anchuan Wang

IPC: H01L21/3213 ,  H01L21/306 ,  H01L21/02 ,  C23F4/02

Abstract: Exemplary etching methods may include flowing an oxygen-containing precursor into a processing region of a semiconductor processing chamber. The methods may include contacting a substrate housed in the processing region with the oxygen-containing precursor. The substrate may include an exposed region of ruthenium, and the contacting may produce ruthenium tetroxide. The methods may include vaporizing the ruthenium tetroxide from a surface of the exposed region of ruthenium. An amount of oxidized ruthenium may remain. The methods may include contacting the oxidized ruthenium with a hydrogen-containing precursor. The methods may include removing the oxidized ruthenium.

公开(公告)号：US11728177B2

公开(公告)日：2023-08-15

申请号：US17173329

申请日：2021-02-11

Applicant: Applied Materials, Inc.

Inventor： Baiwei Wang ,  Oliver Jan ,  Rohan Puligoru Reddy ,  Xiaolin Chen ,  Zhenjiang Cui ,  Anchuan Wang

IPC: H01L21/3213 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/02

CPC classification number: H01L21/32136 ,  H01J37/32357 ,  H01L21/02614 ,  H01L21/3065 ,  H01L21/30655 ,  H01J2237/3341

Abstract: Exemplary etching methods may include flowing an oxygen-containing precursor into a remote plasma region of a semiconductor processing chamber while striking a plasma to produce oxygen plasma effluents. The methods may include contacting a substrate housed in a processing region with the oxygen plasma effluents. The substrate may define an exposed region of titanium nitride. The contacting may produce an oxidized surface on the titanium nitride. The methods may include flowing a halogen-containing precursor into a remote plasma region of a semiconductor processing chamber while striking a plasma to produce halogen plasma effluents. The methods may include contacting the oxidized surface on the titanium nitride with the halogen plasma effluents. The methods may include removing the oxidized surface on the titanium nitride.

公开(公告)号：US20220254648A1

公开(公告)日：2022-08-11

申请号：US17173329

申请日：2021-02-11

Applicant: Applied Materials, Inc.

Inventor： Baiwei Wang ,  Oliver Jan ,  Rohan Puligoru Reddy ,  Xiaolin Chen ,  Zhenjiang Cui ,  Anchuan Wang

IPC: H01L21/3213 ,  H01J37/32

Abstract: Exemplary etching methods may include flowing an oxygen-containing precursor into a remote plasma region of a semiconductor processing chamber while striking a plasma to produce oxygen plasma effluents. The methods may include contacting a substrate housed in a processing region with the oxygen plasma effluents. The substrate may define an exposed region of titanium nitride. The contacting may produce an oxidized surface on the titanium nitride. The methods may include flowing a halogen-containing precursor into a remote plasma region of a semiconductor processing chamber while striking a plasma to produce halogen plasma effluents. The methods may include contacting the oxidized surface on the titanium nitride with the halogen plasma effluents. The methods may include removing the oxidized surface on the titanium nitride.

公开(公告)号：US20220359214A1

公开(公告)日：2022-11-10

申请号：US17307636

申请日：2021-05-04

Applicant: Applied Materials, Inc.

Inventor： Baiwei Wang ,  Xiaolin C. Chen ,  Rohan Puligoru Reddy ,  Oliver Jan ,  Zhenjiang Cui ,  Anchuan Wang

IPC: H01L21/3065 ,  H01L27/1157 ,  H01J37/305

Abstract: Exemplary methods of etching may include flowing a fluorine-containing precursor and a secondary gas into a processing region of a semiconductor processing chamber. The secondary gas may be or include oxygen or nitrogen. A flow rate ratio of the fluorine-containing precursor to the secondary gas may be greater than or about 1:1. The methods may include contacting a substrate with the fluorine-containing precursor and the secondary gas. The substrate may include an exposed metal. The substrate may define a high aspect-ratio structure. The methods may include etching the exposed metal within the high aspect-ratio structure.

公开(公告)号：US11984325B2

公开(公告)日：2024-05-14

申请号：US17373161

申请日：2021-07-12

Applicant: Applied Materials, Inc.

Inventor： Baiwei Wang ,  Xiaolin C. Chen ,  Rohan Puligoru Reddy ,  Oliver Jan ,  Zhenjiang Cui ,  Anchuan Wang

IPC: H01L21/311 ,  H01J37/32 ,  H01L21/3213

CPC classification number: H01L21/32136 ,  H01J37/3244 ,  H01J2237/334

Abstract: Exemplary etching methods may include flowing an oxygen-containing precursor into a processing region of a semiconductor processing chamber. The methods may include contacting a substrate housed in the processing region with the oxygen-containing precursor. The substrate may include an exposed region of a transition metal nitride and an exposed region of a metal. The contacting may form an oxidized portion of the transition metal nitride and an oxidized portion of the metal. The methods may include forming a plasma of a fluorine-containing precursor and a hydrogen-containing precursor to produce fluorine-containing plasma effluents. The methods may include removing the oxidized portion of the transition metal nitride to expose a non-oxidized portion of the transition metal nitride. The methods may include forming a plasma of a chlorine-containing precursor to produce chlorine-containing plasma effluents. The methods may include removing the non-oxidized portion of the transition metal nitride.

公开(公告)号：US11798813B2

公开(公告)日：2023-10-24

申请号：US17240149

申请日：2021-04-26

Applicant: Applied Materials, Inc.

Inventor： Baiwei Wang ,  Xiaolin C. Chen ,  Rohan Puligoru Reddy ,  Oliver Jan ,  Zhenjiang Cui ,  Anchuan Wang

IPC: H01L21/3213 ,  H01L21/306 ,  C23F4/02 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/311

CPC classification number: H01L21/32136 ,  C23F4/02 ,  H01L21/02315 ,  H01L21/02414 ,  H01L21/3065 ,  H01L21/30604 ,  H01L21/31116 ,  H01L21/32135

Abstract: Exemplary etching methods may include flowing an oxygen-containing precursor into a processing region of a semiconductor processing chamber. The methods may include contacting a substrate housed in the processing region with the oxygen-containing precursor. The substrate may include an exposed region of ruthenium, and the contacting may produce ruthenium tetroxide. The methods may include vaporizing the ruthenium tetroxide from a surface of the exposed region of ruthenium. An amount of oxidized ruthenium may remain. The methods may include contacting the oxidized ruthenium with a hydrogen-containing precursor. The methods may include removing the oxidized ruthenium.

公开(公告)号：US11631589B2

公开(公告)日：2023-04-18

申请号：US17307636

申请日：2021-05-04

Applicant: Applied Materials, Inc.

Inventor： Baiwei Wang ,  Xiaolin C. Chen ,  Rohan Puligoru Reddy ,  Oliver Jan ,  Zhenjiang Cui ,  Anchuan Wang

IPC: H01L21/3065 ,  H01L27/1157 ,  H01J37/305

Abstract: Exemplary methods of etching may include flowing a fluorine-containing precursor and a secondary gas into a processing region of a semiconductor processing chamber. The secondary gas may be or include oxygen or nitrogen. A flow rate ratio of the fluorine-containing precursor to the secondary gas may be greater than or about 1:1. The methods may include contacting a substrate with the fluorine-containing precursor and the secondary gas. The substrate may include an exposed metal. The substrate may define a high aspect-ratio structure. The methods may include etching the exposed metal within the high aspect-ratio structure.