公开(公告)号：US20190385874A1

公开(公告)日：2019-12-19

申请号：US16010899

申请日：2018-06-18

Applicant: APPLIED MATERIALS, INC.

Inventor： PREETHAM P. RAO ,  MADHUKAR C GULEDGUDD ,  ANANTHKRISHNA JUPUDI ,  RIBHU GAUTAM ,  TUCK FOONG KOH

IPC: H01L21/67 ,  G05D7/00

Abstract: Methods and apparatus for controlling gas flow in a process chamber use reconfigurable gas flow plates. The gas flow plates are configured based on at least one processing parameter in the process chamber and then inserted into the process chamber such that a gas flow into an internal volume of the process chamber is controlled by the gas flow plate. The configuration of the gas flow plate may be based on a type of processing, dimensions of the internal volume of the processing chamber, a number of substrates to be processed in the processing chamber, and other parameters. The gas flow plate may include changeable parameters such as a number of through holes, through hole diameters, orientation of through holes, or a position of through holes relative to spacing between substrates.

公开(公告)号：US20230109912A1

公开(公告)日：2023-04-13

申请号：US17903913

申请日：2022-09-06

Applicant: Applied Materials, Inc.

Inventor： Thai Cheng Chua ,  CHRISTIAN VALENCIA ,  DOREEN YONG ,  TUCK FOONG KOH ,  JENN-YUE WANG ,  PHILIP ALLAN KRAUS

IPC: H01L21/311

Abstract: Embodiments disclosed herein include a method of etching a 3D structure. In an embodiment, the method comprises providing the 3D structure in a microwave plasma chamber. In an embodiment, the 3D structure comprises a substrate, and alternating layers of silicon oxide and silicon nitride over the substrate. In an embodiment, the method further comprises flowing a first gas into the microwave plasma chamber, where the first gas comprises sulfur and fluorine. In an embodiment, the method comprises flowing a second gas into the microwave plasma chamber, where the second gas comprises an inert gas. In an embodiment, the method further comprises striking a plasma in the microwave plasma chamber, and etching the silicon nitride, where an etching selectivity of silicon nitride to silicon oxide is 50:1 or greater.

公开(公告)号：US20210233773A1

公开(公告)日：2021-07-29

申请号：US17227327

申请日：2021-04-11

Applicant: APPLIED MATERIALS, INC.

Inventor： YUEH SHENG OW ,  JUNQI WEI ,  WEN LONG FAVIER SHOO ,  ANANTHKRISHNA JUPUDI ,  TAKASHI SHIMIZU ,  KELVIN BOH ,  TUCK FOONG KOH

IPC: H01L21/30 ,  H01L21/683 ,  H01L21/67

Abstract: Methods, apparatuses, and systems for substrate processing for lowering contact resistance in at least contact pads of a semiconductor device are provided herein. In some embodiments, a method of substrate processing for lowering contact resistance of contact pads includes: circulating a cooling fluid in at least one channel of a pedestal; and exposing a backside of the substrate located on the pedestal to a cooling gas to cool a substrate located on the pedestal to a temperature of less than 70 degrees Celsius. In some embodiments in accordance with the present principles, the method can further include distributing a hydrogen gas or hydrogen gas combination over the substrate.

公开(公告)号：US20210059017A1

公开(公告)日：2021-02-25

申请号：US16545901

申请日：2019-08-20

Applicant: APPLIED MATERIALS, INC.

Inventor： TUCK FOONG KOH ,  YUEH SHENG OW ,  NUNO YEN-CHU CHEN ,  ANANTHKRISHNA JUPUDI ,  PREETHAM P. RAO

IPC: H05B1/02 ,  H05B6/80

Abstract: Methods and apparatus for processing a substrate are provided herein. The apparatus can include, for example, a microwave energy source configured to provide microwave energy from beneath a substrate support provided in an inner volume of the process chamber; a first microwave reflector positioned on the substrate support above a substrate supporting position of the substrate support; and a second microwave reflector positioned on the substrate support beneath the substrate supporting position, wherein the first microwave reflector and the second microwave reflector are positioned and configured such that microwave energy passes through the second microwave reflector and some of the microwave energy is reflected from a bottom surface of the first microwave reflector back to the substrate during operation.

公开(公告)号：US20190355616A1

公开(公告)日：2019-11-21

申请号：US16403796

申请日：2019-05-06

Applicant: APPLIED MATERIALS, INC.

Inventor： FELIX DENG ,  YUEH SHENG OW ,  TUCK FOONG KOH ,  NUNO YEN-CHU CHEN ,  YUICHI WADA ,  SREE RANGASAI V KESAPRAGADA ,  CLINTON GOH

IPC: H01L21/762 ,  H01L21/67

Abstract: Methods and apparatus for cleaving a substrate in a semiconductor chamber. The semiconductor chamber pressure is adjusted to a process pressure, a substrate is then heated to a nucleation temperature of ions implanted in the substrate, the temperature of the substrate is then adjusted below the nucleation temperature of the ions, and the temperature is maintained until cleaving of the substrate occurs. Microwaves may be used to provide heating of the substrate for the processes. A cleaving sensor may be used for detection of successful cleaving by detecting pressure changes, acoustic emissions, changes within the substrate, and/or residual gases given off by the implanted ions when the cleaving occurs.

公开(公告)号：US20200378006A1

公开(公告)日：2020-12-03

申请号：US16424302

申请日：2019-05-28

Applicant: APPLIED MATERIALS, INC.

Inventor： RIBHU GAUTAM ,  ANANTHKRISHNA JUPUDI ,  TUCK FOONG KOH ,  PREETHAM P. RAO ,  VINODH RAMACHANDRAN ,  YUEH SHENG OW ,  YUICHI WADA ,  CHENG-HSIUNG TSAI ,  KAI LIANG LIEW

IPC: C23C16/511 ,  C23C16/54 ,  B01J19/12

Abstract: Methods and apparatus for a substrate processing chamber are provided herein. In some embodiments, a substrate processing chamber includes a chamber body having sidewalls defining an interior volume having a polygon shape; a selectively sealable elongated opening disposed in an upper portion of the chamber body for transferring one or more substrates into or out of the chamber body; a funnel disposed at a first end of the chamber body, wherein the funnel increases in size along a direction from an outer surface of the chamber body to the interior volume; and a pump port disposed at a second end of the chamber body opposite the funnel.

公开(公告)号：US20190341264A1

公开(公告)日：2019-11-07

申请号：US16399478

申请日：2019-04-30

Applicant: APPLIED MATERIALS, INC.

Inventor： YUEH SHENG OW ,  JUNQI WEI ,  WEN LONG FAVIER SHOO ,  ANANTHKRISHNA JUPUDI ,  TAKASHI SHIMIZU ,  KELVIN BOH ,  TUCK FOONG KOH

IPC: H01L21/30 ,  H01L21/683 ,  H01L21/67

Abstract: Methods, apparatuses, and systems for substrate processing for lowering contact resistance in at least contact pads of a semiconductor device are provided herein. In some embodiments, a method of substrate processing for lowering contact resistance of contact pads includes: circulating a cooling fluid in at least one channel of a pedestal; and exposing a backside of the substrate located on the pedestal to a cooling gas to cool a substrate located on the pedestal to a temperature of less than 70 degrees Celsius. In some embodiments in accordance with the present principles, the method can further include distributing a hydrogen gas or hydrogen gas combination over the substrate.

公开(公告)号：US20170365490A1

公开(公告)日：2017-12-21

申请号：US15451603

申请日：2017-03-07

Applicant: APPLIED MATERIALS, INC.

Inventor： YUEH SHENG OW ,  RUI WANG ,  TUCK FOONG KOH ,  XIN WANG

IPC: H01L21/56 ,  H05B6/70 ,  H05B6/64 ,  H01L21/3105 ,  H01L23/29 ,  H01L21/67 ,  H05B6/80 ,  H05B6/68

CPC classification number: H01L21/565 ,  H01L21/31058 ,  H01L21/56 ,  H01L21/67115 ,  H01L21/67248 ,  H01L23/293 ,  H05B6/645 ,  H05B6/68 ,  H05B6/70 ,  H05B6/705 ,  H05B6/80

Abstract: Methods of curing polyimide to tune the coefficient of thermal expansion are provided herein. In some embodiments, a method of curing a polymer layer on a substrate, includes: (a) applying a variable frequency microwave energy to the substrate to heat the polymer layer and the substrate to a first temperature; and (b) adjusting the variable frequency microwave energy to increase a temperature of the polymer layer and the substrate to a second temperature to cure the polymer layer.