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    Measuring height difference in patterns on semiconductor wafers
    1.
    发明授权
    Measuring height difference in patterns on semiconductor wafers 有权

    公开(公告)号：US10748272B2

    公开(公告)日：2020-08-18

    申请号：US15982918

    申请日：2018-05-17

    Applicant: Applied Materials Israel Ltd.

    Inventor： Ishai Schwarzband ,  Yan Avniel ,  Sergey Khristo ,  Mor Baram ,  Shimon Levi ,  Doron Girmonsky ,  Roman Kris

    IPC: G06K9/00 ,  G06T7/00 ,  G06T7/60

    Abstract: An improved technique for determining height difference in patterns provided on semiconductor wafers uses real measurements (e.g., measurements from SEM images) and a height difference determination model. In one version of the model, a measurable variable of the model is expressed in terms of a function of a change in depth of shadow (i.e. relative brightness), wherein the depth of shadow depends on the height difference as well as width difference between two features on a semiconductor wafer. In another version of the model, the measurable variable is expressed in terms of a function of a change of a measured distance between two characteristic points on the real image of a periodic structure with respect to a change in a tilt angle of a scanning electron beam.

    Evaluating an intermediate product related to a three-dimensional NAND memory unit
    4.
    发明授权
    Evaluating an intermediate product related to a three-dimensional NAND memory unit 有权

    公开(公告)号：US11476081B2

    公开(公告)日：2022-10-18

    申请号：US16917304

    申请日：2020-06-30

    Applicant: APPLIED MATERIALS ISRAEL LTD.

    Inventor： Roman Kris ,  Vadim Vereschagin ,  Assaf Shamir ,  Elad Sommer ,  Sharon Duvdevani-Bar ,  Meng Li Cecilia Lim

    IPC: H01L27/11519 ,  H01L27/11551 ,  H01L27/11524 ,  H01L21/66 ,  H01J37/22 ,  H01J37/28

    Abstract: A method, non-transitory computer readable medium and an evaluation system for evaluating an intermediate product related to a three dimensional NAND memory unit. The evaluation system may include an imager and a processing circuit. The imager may be configured to obtain, via an open gap, an electron image of a portion of a structural element that belongs to an intermediate product. The structural element may include a sequence of layers that include a top layer that is followed by alternating nonconductive layers and recessed conductive layers. The imager may include electron optics configured to scan the portion of the structural element with an electron beam that is oblique to a longitudinal axis of the open gap. The processing circuit is configured to evaluate the intermediate product based on the electron image. The open gap (a) exhibits a high aspect ratio, (b) has a width of nanometric scale, and (c) is formed between structural elements of the intermediate product.

    MEASURING HEIGHT DIFFERENCE IN PATTERNS ON SEMICONDUCTOR WAFERS
    5.
    发明申请
    MEASURING HEIGHT DIFFERENCE IN PATTERNS ON SEMICONDUCTOR WAFERS 审中-公开

    公开(公告)号：US20200380668A1

    公开(公告)日：2020-12-03

    申请号：US16995077

    申请日：2020-08-17

    Applicant: Applied Materials Israel Ltd.

    Inventor： Ishai Schwarzband ,  Yan Avniel ,  Sergey Khristo ,  Mor Baram ,  Shimon Levi ,  Doron Girmonsky ,  Roman Kris

    IPC: G06T7/00 ,  G06T7/60

    Abstract: An improved technique for determining height difference in patterns provided on semiconductor wafers uses real measurements (e.g., measurements from SEM images) and a height difference determination model. In one version of the model, a measurable variable of the model is expressed in terms of a function of a change in depth of shadow (i.e. relative brightness), wherein the depth of shadow depends on the height difference as well as width difference between two features on a semiconductor wafer. In another version of the model, the measurable variable is expressed in terms of a function of a change of a measured distance between two characteristic points on the real image of a periodic structure with respect to a change in a tilt angle of a scanning electron beam.

    System, method and computer readable medium for detecting edges of a pattern
    6.
    发明授权
    System, method and computer readable medium for detecting edges of a pattern 有权
    用于检测图案边缘的系统，方法和计算机可读介质

    公开(公告)号：US09165376B2

    公开(公告)日：2015-10-20

    申请号：US13837896

    申请日：2013-03-15

    Applicant: APPLIED MATERIALS ISRAEL, LTD.

    Inventor： Ishai Schwartzband ,  Roman Kris ,  Shimon Levi

    IPC: G06K9/00 ,  G06T7/40 ,  G06T5/00

    CPC classification number: G06T7/402 ,  G06K9/0014 ,  G06T5/003 ,  G06T7/42 ,  G06T2207/20192 ,  G06T2207/30148

    Abstract: A system, a non-transitory computer readable medium and a method for detecting a parameter of a pattern, the method comprises: obtaining an image of the pattern; wherein the image is generated by scanning the pattern with a charged particle beam; processing the image to provide an edge enhanced image; wherein the processing comprises computing an aggregate energy of first n spectral components of the image, wherein n exceeds two; and further processing the edge enhanced image and determining a parameter of the pattern.

    Abstract translation: 一种系统，非暂时性计算机可读介质和用于检测图案参数的方法，所述方法包括：获得图案的图像; 其中通过用带电粒子束扫描图案来生成图像; 处理图像以提供边缘增强图像; 其中所述处理包括计算所述图像的前n个光谱分量的聚集能量，其中n超过2; 并进一步处理边缘增强图像并确定图案的参数。

    SYSTEM, METHOD AND COMPUTER READABLE MEDIUM FOR DETECTING EDGES OF A PATTERN
    7.
    发明申请
    SYSTEM, METHOD AND COMPUTER READABLE MEDIUM FOR DETECTING EDGES OF A PATTERN 有权
    用于检测图案边缘的系统，方法和计算机可读介质

    公开(公告)号：US20140270470A1

    公开(公告)日：2014-09-18

    申请号：US13837896

    申请日：2013-03-15

    Applicant: APPLIED MATERIALS ISRAEL, LTD.

    Inventor： Ishai Schwartzband ,  Roman Kris ,  Shimon Levi

    IPC: G06T7/00

    CPC classification number: G06T7/402 ,  G06K9/0014 ,  G06T5/003 ,  G06T7/42 ,  G06T2207/20192 ,  G06T2207/30148

    Abstract: A system, a non-transitory computer readable medium and a method for detecting a parameter of a pattern, the method comprises: obtaining an image of the pattern; wherein the image is generated by scanning the pattern with a charged particle beam; processing the image to provide an edge enhanced image; wherein the processing comprises computing an aggregate energy of first n spectral components of the image, wherein n exceeds two; and further processing the edge enhanced image and determining a parameter of the pattern.

    Abstract translation: 一种系统，非暂时性计算机可读介质和用于检测图案参数的方法，所述方法包括：获得图案的图像; 其中通过用带电粒子束扫描图案来生成图像; 处理图像以提供边缘增强图像; 其中所述处理包括计算所述图像的前n个光谱分量的聚集能量，其中n超过2; 并进一步处理边缘增强图像并确定图案的参数。

    Measuring height difference in patterns on semiconductor wafers
    10.
    发明授权
    Measuring height difference in patterns on semiconductor wafers 有权

    公开(公告)号：US11301983B2

    公开(公告)日：2022-04-12

    申请号：US16995077

    申请日：2020-08-17

    Applicant: Applied Materials Israel Ltd.

    Inventor： Ishai Schwarzband ,  Yan Avniel ,  Sergey Khristo ,  Mor Baram ,  Shimon Levi ,  Doron Girmonsky ,  Roman Kris

    IPC: G06K9/00 ,  G06T7/00 ,  G06T7/60

    Abstract: An improved technique for determining height difference in patterns provided on semiconductor wafers uses real measurements (e.g., measurements from SEM images) and a height difference determination model. In one version of the model, a measurable variable of the model is expressed in terms of a function of a change in depth of shadow (i.e. relative brightness), wherein the depth of shadow depends on the height difference as well as width difference between two features on a semiconductor wafer. In another version of the model, the measurable variable is expressed in terms of a function of a change of a measured distance between two characteristic points on the real image of a periodic structure with respect to a change in a tilt angle of a scanning electron beam.

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