公开(公告)号：US20160070068A1

公开(公告)日：2016-03-10

申请号：US14845700

申请日：2015-09-04

Applicant: BAE SYSTEMS Information and Electronic Systems Integration Inc.

Inventor： Andrew TS Pomerene

IPC: G02B6/30 ,  G02B6/25 ,  G02B6/42 ,  G02B6/34 ,  G02B5/32 ,  G02B6/124 ,  G02B6/36

CPC classification number: G02B6/30 ,  G02B6/124 ,  G02B6/34 ,  G02B6/3652 ,  G02B6/4242

Abstract: The present invention provides an improved coupling and improved alignment of top-coupled photonic chips. The present invention includes a method to package and align top-coupling photonic chips using a holographic grating coupler and V-groove placement comprising the steps of: preparing the photonic chip with grating couplers, preparing the fibers by polishing the ends, preparing the cap chip by defining V-grooves to complement the photonic chip, attaching the fibers to the V-block cap chip, and top-cladding the cap chip to the photonic chip. The present invention also includes the apparatus resulting from the aforementioned method.

Abstract translation: 本发明提供了改进的耦合和改进的顶部耦合光子芯片的对准。 本发明包括一种使用全息光栅耦合器和V沟槽放置来封装和对准顶部耦合光子芯片的方法，包括以下步骤：用光栅耦合器制备光子芯片，通过抛光端部制备光纤，制备封装芯片 通过定义V沟以补充光子芯片，将光纤连接到V形块盖芯片，并将帽芯片顶部覆盖到光子芯片。 本发明还包括由上述方法得到的装置。

公开(公告)号：US20160181096A1

公开(公告)日：2016-06-23

申请号：US15057403

申请日：2016-03-01

Applicant: BAE Systems Information and Electronic Systems Integration Inc.

Inventor： Daniel N. Carothers ,  Craig M. Hill ,  Andrew TS Pomerene ,  Vu An Vu

IPC: H01L21/02

CPC classification number: H01L21/02532 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02502 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02645 ,  H01L21/02658

Abstract: A method for growing germanium epitaxial films is disclosed. Initially, a silicon substrate is preconditioned with hydrogen gas. The temperature of the preconditioned silicon substrate is then decreased, and germane gas is flowed over the preconditioned silicon substrate to form an intrinsic germanium seed layer. Next, a mixture of germane and phosphine gases can be flowed over the intrinsic germanium seed layer to produce an n-doped germanium seed layer. Otherwise, a mixture of diborane and germane gases can be flowed over the intrinsic germanium seed laser to produce a p-doped germanium seed layer. At this point, a bulk germanium layer can be grown on top of the doped germanium seed layer.

Abstract translation: 公开了一种用于生长锗外延膜的方法。 首先，用氢气预处理硅衬底。 然后，预处理的硅衬底的温度降低，并且锗烷气体在预处理的硅衬底上流动以形成固有的锗种子层。 接下来，可以将锗烷烃和磷化氢气体的混合物流过本征锗种子层，以产生n掺杂的锗种子层。 否则，乙硼烷和锗烷气体的混合物可以流过本征锗种子激光器以产生p掺杂的锗种子层。 此时，可以在掺杂的锗种子层的顶部上生长大块锗层。

公开(公告)号：US09196764B2

公开(公告)日：2015-11-24

申请号：US14730932

申请日：2015-06-04

Applicant: BAE Systems Information and Electronic Systems Integration Inc.

Inventor： Andrew TS Pomerene ,  Vu A. Vu ,  Robert L. Kamocsai

IPC: G02B6/42 ,  H01L31/18 ,  H01L31/02 ,  H01L21/02 ,  H01L31/0232

CPC classification number: H01L31/02327 ,  G02B6/122 ,  G02B6/4295 ,  H01L21/02532 ,  H01L31/0232 ,  H01L31/107 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/1808

Abstract: A method for manufacturing a photodetector including growing a quantity of germanium within an optical pathway of a waveguide. The detection of a current caused by an interaction between the optical signal and the germanium is used to indicate the presence of an optical signal passing through the waveguide.