公开(公告)号：US10669297B2

公开(公告)日：2020-06-02

申请号：US15779893

申请日：2016-11-30

Applicant: BASF SE

Inventor： Torben Adermann ,  Daniel Loeffler ,  Hagen Wilmer ,  Kerstin Schierle-Arndt ,  Jan Gerkens ,  Christian Volkmann ,  Sven Schneider

IPC: C09D1/00 ,  C07F15/06 ,  C23C16/18 ,  C23C16/455 ,  C01B33/06 ,  C09D5/02 ,  H01L21/285 ,  H01L21/768

Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. The present invention relates to a process comprising bringing a compound of general formula (I) into the gaseous or aerosol state and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein M is Mn, Ni or Co, X is a ligand which coordinates M, n is 0, 1, or 2, R1, R2 are an alkyl group, an alkenyl group, an aryl group or a silyl group, m is 1, 2, or 3, R3, R4, and R5 are an alkyl group, an alkenyl group, an aryl group, an alkoxy group, or an aryloxy group, and p is 1, 2 or 3.

公开(公告)号：US10801105B2

公开(公告)日：2020-10-13

申请号：US15775856

申请日：2016-11-18

Applicant: BASF SE

Inventor： Torben Adermann ,  Daniel Loeffler ,  Carolin Limburg ,  Falko Abels ,  Hagen Wilmer ,  Monica Gill ,  Matthew Griffiths ,  Sean Barry

IPC: C23C16/18 ,  C07F15/06 ,  C23C16/455

Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. The present invention relates to a process comprising bringing a compound of general formula (I) into the gaseous or aerosol state and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein R1, R2, R3, and R4 are independent of each other an alkyl group, an aryl group or a trialkylsilyl group, M is Mn, Ni or Co, X is a ligand which coordinates M, wherein at least one X is a neutrally charged ligand, m is 1, 2 or 3 and n is at least 1 wherein the molecular weight of the compound of general formula (I) is up to 1000 g/mol.

公开(公告)号：US11180852B2

公开(公告)日：2021-11-23

申请号：US16322999

申请日：2017-08-23

Applicant: BASF SE

Inventor： Torben Adermann ,  Falko Abels ,  Carolin Limburg ,  Hagen Wilmer ,  Jan Gerkens ,  Sven Schneider

IPC: C23C16/455 ,  C07F15/06 ,  C23C16/18

Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. The present invention relates to a process for the generation of inorganic films comprising depositing the compound of general formula (I) onto a solid substrate (I), wherein M is Mn, Ni or Co, X is a ligand which coordinates M, n is 0, 1, 2, 3, or 4, R1 is an alkyl group, an alkenyl group, an aryl group, a halogen, or a silyl group, R2 is an alkyl group, an alkenyl group, an aryl group, or a silyl group, p and q are 1 or 2, wherein p+q=3, and m is 1, 2, or 3.

公开(公告)号：US12297534B2

公开(公告)日：2025-05-13

申请号：US17778429

申请日：2020-11-16

Applicant: BASF SE ,  Wayne State University

Inventor： Sinja Verena Klenk ,  Alexander Georg Hufnagel ,  Hagen Wilmer ,  Daniel Löffler ,  Sabine Weiguny ,  Kerstin Schierle-Arndt ,  Charles Hartger Winter ,  Nilanka Weerathunga Sirikkathuge

IPC: C23C16/455 ,  C23C16/18

Abstract: The present invention is in the field of processes for preparing inorganic metal- or semimetal-containing films. The process for preparing inorganic metal- or semimetal-containing films comprising (a) depositing a metal- or semimetal-containing compound from the gaseous state onto a solid substrate and (b) bringing the solid substrate with the deposited metal- or semimetal-containing compound in contact with a compound of general formula (I) or (II) wherein Z is NR2, PR2, OR, SR, CR2, SiR2, X is H, R′ or NR′2, wherein at least one X is H, n is 1 or 2, and R and R′ is an alkyl group, an alkenyl group, an aryl group, or a silyl group.

公开(公告)号：US10787738B2

公开(公告)日：2020-09-29

申请号：US16063603

申请日：2017-01-17

Applicant: BASF SE

Inventor： Falko Abels ,  Daniel Loeffler ,  Hagen Wilmer ,  Robert Wolf ,  Christian Roedl ,  Philipp Bueschelberger

IPC: C23C16/18 ,  C23C16/448 ,  C07F15/06 ,  C23C16/455 ,  C07F9/6568 ,  C23C16/34 ,  C23C16/40 ,  C01B21/06 ,  C01G51/04 ,  C01G53/04

Abstract: Processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. In particular, a process of bringing a compound of general formula (I) into the gaseous or aerosol state Ln - - - M - - - Xm  (I) and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein M is a metal, L is a ligand which coordinates to M and contains at least one phosphorus-carbon multiple bond, wherein L contains a phosphorus-containing heterocyclic ring or a phosphorus-carbon triple bond, X is a ligand which coordinates to M, n is 1 to 5, and m is 0 to 5.

公开(公告)号：US10344381B2

公开(公告)日：2019-07-09

申请号：US15325840

申请日：2015-07-22

Applicant: BASF SE

Inventor： Julia Strautmann ,  Rocco Paciello ,  Thomas Schaub ,  Felix Eickemeyer ,  Daniel Loeffler ,  Hagen Wilmer ,  Udo Radius ,  Johannes Berthel ,  Florian Hering

IPC: C23C16/455 ,  C23C16/18 ,  C07F15/04 ,  C07F15/06 ,  C30B25/10 ,  C30B25/08

Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. In detail the present invention relates a process comprising bringing a compound of general formula (I) into the gaseous or aerosol state (Fig.) and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein R1 and R4 are independent of each other an alkyl group, an aryl group or a trialkylsilyl group, R2, R3, R5 and R6 are independent of each other hydrogen, an alkyl group, an aryl group or a trialkylsilyl group, n is an integer from 1 to 3, M is Ni or Co, X is a ligand which coordinates M, and m is an integer from 0 to 4.

公开(公告)号：US10106888B2

公开(公告)日：2018-10-23

申请号：US15501631

申请日：2015-07-24

Applicant: BASF SE

Inventor： Julia Strautmann ,  Rocco Paciello ,  Thomas Schaub ,  Kerstin Schierle-Arndt ,  Daniel Loeffler ,  Hagen Wilmer ,  Felix Eickemeyer ,  Florian Blasberg ,  Carolin Limburg

IPC: C23C16/06 ,  C23C16/18 ,  C23C16/455

Abstract: A process of bringing a compound of general formula (I) into the gaseous or aerosol state and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein R11, R12, R13, R14, R15, R16, R17, R18 are independent of each other hydrogen, an alkyl group, an aryl group, or a trialkylsilyl group, R21, R22, R23, R24 are independent of each other an alkyl group, an aryl group, or a trialkylsilyl group, n is 1 or 2, M is a metal or semimetal, X is a ligand which coordinates M, and m is an integer from 0 to 3.

公开(公告)号：US10022714B2

公开(公告)日：2018-07-17

申请号：US14823292

申请日：2015-08-11

Applicant: BASF SE

Inventor： Cornelia Katharina Dobner ,  Stefan Altwasser ,  Hagen Wilmer ,  Frank Rosowski

IPC: B01J35/02 ,  B01J35/10 ,  B01J27/198 ,  B01J37/00 ,  C07C51/215 ,  B01J35/00

Abstract: The invention relates to a catalyst molded body for preparing maleic anhydride by gas-phase oxidation of a hydrocarbon having at least four carbon atoms using a catalytically active composition containing vanadium, phosphorus and oxygen. The shaped catalyst body has an essentially cylindrical body having a longitudinal axis. The cylindrical body has at least two parallel internal holes which are essentially parallel to the cylinder axis of the body and go right through the body. The catalyst molded body has a large outer surface area, a lower pressure loss and sufficient mechanical stability.