Photolithography apparatus and method
    10.
    发明授权
    Photolithography apparatus and method 失效
    光刻设备和方法

    公开(公告)号:US3558222A

    公开(公告)日:1971-01-26

    申请号:US3558222D

    申请日:1968-02-06

    Inventor: POOLE KENNETH M

    Abstract: A PHOTOLITHOGRAPHIC MASK IS REGISTERED WITH A PATTERN CONTAINED ON THE SURFACE OF A SEMICONDUCTOR WAFER COATED WITH PHOTORESIST MATERIAL BY REFLECTING LIGHT TO WHICH THE PHOTORESIST IS INSENTIVE FROM THE WAFER SURFACE AND IMAGING THE WAFER SURFACE ONTO THE MASK BY MEANS OF A PRIMARY LENS AND A SUPPLEMENTARY LENS, OBSERVING THE MASK AND THE WAFER SURFACE PATTERN SIMULTANEOUSLY THROUGH A MICROSCOPE, AND MOVING THE MASK TO REGISTER IT WITH RESPECT TO THE WAFER SURFACE PATTERN. THE SUPPLEMENTARY LENS IS THEN REMOVED AND LIGHT OF A FREQUENCY TO WHICH THE PHOTORESIST IS PHOTOSENSITIVE IS DIRECTED THROUGH THE MASK AND IMAGED BY THE PRIMARY LENS ONTO THE WAFER SURFACE. THE FOCAL LENGTH OF THE PRIMARY AND SUPPLEMENTARY LENS TOGETHER AT THE FREQUENCY USED DURING REGISTRATION IS SUBSTANTIALLY EAUL TO THE FOCAL LENGTH OF THE PRIMARY LENS ALONE AT THE OPTICAL FREQUENCY USED DURING PHOTOGRAPHIC EXPOSURE OF THE PHOTORESIST.

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