Abstract:
Stored data representative of a pattern or image to be reproduced modulates a writing light beam that is reflected by a rotating mirror structure to scan a photosensitive medium. A coding beam scans a code plate in synchronism with the writing beam to generate a code signal used for controlling modulation of the writing beam. A scanning lens having a nonuniform focal length is used to make the linear scan velocity of the writing beam more uniform. An interferometer may be used to drive a refracting plate in the writing beam path to compensate for errors in the movement of the photosensitive medium.
Abstract:
A PHOTOLITHOGRAPHIC MASK IS REGISTERED WITH A PATTERN CONTAINED ON THE SURFACE OF A SEMICONDUCTOR WAFER COATED WITH PHOTORESIST MATERIAL BY REFLECTING LIGHT TO WHICH THE PHOTORESIST IS INSENTIVE FROM THE WAFER SURFACE AND IMAGING THE WAFER SURFACE ONTO THE MASK BY MEANS OF A PRIMARY LENS AND A SUPPLEMENTARY LENS, OBSERVING THE MASK AND THE WAFER SURFACE PATTERN SIMULTANEOUSLY THROUGH A MICROSCOPE, AND MOVING THE MASK TO REGISTER IT WITH RESPECT TO THE WAFER SURFACE PATTERN. THE SUPPLEMENTARY LENS IS THEN REMOVED AND LIGHT OF A FREQUENCY TO WHICH THE PHOTORESIST IS PHOTOSENSITIVE IS DIRECTED THROUGH THE MASK AND IMAGED BY THE PRIMARY LENS ONTO THE WAFER SURFACE. THE FOCAL LENGTH OF THE PRIMARY AND SUPPLEMENTARY LENS TOGETHER AT THE FREQUENCY USED DURING REGISTRATION IS SUBSTANTIALLY EAUL TO THE FOCAL LENGTH OF THE PRIMARY LENS ALONE AT THE OPTICAL FREQUENCY USED DURING PHOTOGRAPHIC EXPOSURE OF THE PHOTORESIST.