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公开(公告)号：US11333944B2
公开(公告)日：2022-05-17
申请号：US16979288
申请日：2019-11-28
发明人： Mingxuan Liu , Xiaoxiang Zhang , Xiangqian Ding , Yongzhi Song , Xiangmeng Zhang , Xiao Han , Honggang Liang
IPC分类号： G02F1/1362 , G02F1/1368 , H01L27/12
摘要： An array substrate includes a base, at least one common electrode, at least one signal line and at least one conductive connecting line. The at least one common electrode is formed on the base, and a signal line arranged correspondingly to each of the at least one common electrode is formed on the base. The signal line includes a light absorbing layer and a metal layer that are stacked in a direction away from the base. Conductivity of the light absorbing layer is less than conductivity of molybdenum. Each of the at least one conductive connecting line is electrically connected to both a common electrode and a metal layer in the corresponding signal line.
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公开(公告)号：US11079670B2
公开(公告)日：2021-08-03
申请号：US16334870
申请日：2018-09-21
发明人： Mingxuan Liu , Huibin Guo , Yongzhi Song , Xiaoxiang Zhang , Wenqing Xu , Zumou Wu , Xiaolong Li
IPC分类号： G03F1/26
摘要： Disclosed are a manufacturing method of a phase shift mask and a phase shift mask. The manufacturing method of a phase shift mask includes: forming a pattern of metal shielding layer on a base substrate; forming a phase shift layer and a first photoresist layer in sequence on the pattern of metal shielding layer; patterning the first photoresist layer with the pattern of metal shielding layer serving as a mask to form a pattern of first photoresist layer; and etching the phase shift layer with the pattern of first photoresist layer serving as a mask to form a pattern of phase shift layer.
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公开(公告)号：US10551696B2
公开(公告)日：2020-02-04
申请号：US15970803
申请日：2018-05-03
发明人： Xiaolong Li , Xiaoxiang Zhang , Huibin Guo , Mingxuan Liu , Wenqing Xu , Zumou Wu , Yongzhi Song
IPC分类号： H01L21/027 , G02F1/1343 , H01L27/12 , H01L29/45 , H01L29/49 , H01L29/786 , G02F1/1335 , H01L21/3213
摘要： The present disclosure relates to a metal electrode, an array substrate and a method of producing the same, and a display device. In an embodiment, the method includes: forming a protection layer on a metal layer; patterning the protection layer to form a protection pattern, a profile of the protection pattern being the same as a profile of a predetermined pattern of the metal electrode; and etching a part of the metal layer not covered by the protection pattern to form the metal electrode, the metal electrode being covered by the protection pattern, wherein an etching anisotropy of the protection layer is larger than an etching anisotropy of the metal layer.
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公开(公告)号：US10510279B2
公开(公告)日：2019-12-17
申请号：US15751120
申请日：2017-07-24
发明人： Xiaoxiang Zhang , Xi Chen , Mingxuan Liu , Huibin Guo , Liping Luo
摘要： The present disclosure provides a shift register unit, a gate scanning circuit, a driving method, and a display apparatus. The shift register unit comprises a reset circuit configured to transmit a signal from a signal control terminal to a first node and a shift register unit signal output terminal under the control of a reset control signal input terminal; a first pull-down control circuit configured to transmit the signal from the signal control terminal to the first node and the shift register unit signal output terminal under the control of a second node; and a second pull-down control circuit configured to transmit the signal from the signal control terminal to the first node and the shift register unit signal output terminal under the control of a third node control signal input terminal coupled to a third node, so as to cooperate with the reset circuit and the first pull-down control circuit to jointly reset the shift register unit in a phase in which output of the shift register unit should not occur, thereby effectively preventing output of the shift register unit from occurring in the phase in which output of the shift register unit should not occur.
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5.发明申请公开(公告)号：US20190094597A1
公开(公告)日：2019-03-28
申请号：US15970803
申请日：2018-05-03
发明人： Xiaolong Li , Xiaoxiang Zhang , Huibin Guo , Mingxuan Liu , Wenqing Xu , Zumou Wu , Yongzhi Song
IPC分类号： G02F1/1343 , H01L21/027 , H01L27/12 , H01L29/45 , H01L29/49 , H01L29/786
摘要： The present disclosure relates to a metal electrode, an array substrate and a method of producing the same, and a display device. In an embodiment, the method includes: forming a protection layer on a metal layer; patterning the protection layer to form a protection pattern, a profile of the protection pattern being the same as a profile of a predetermined pattern of the metal electrode; and etching a part of the metal layer not covered by the protection pattern to form the metal electrode, the metal electrode being covered by the protection pattern, wherein an etching anisotropy of the protection layer is larger than an etching anisotropy of the metal layer.
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公开(公告)号：US10012906B2
公开(公告)日：2018-07-03
申请号：US15647589
申请日：2017-07-12
发明人： Liping Luo , Mingxuan Liu , Xiaoxiang Zhang , Huishuang Liu , Zengbiao Sun , Wei Li
CPC分类号： G03F7/3057 , B05B13/0228 , B05B13/0421 , G03F7/3028 , G03G15/10 , H01L27/1259
摘要： A developing device includes a spraying assembly and a concentration regulating assembly. A developing method usable in the developing device includes: spraying developing agents by a spraying assembly onto respective developing regions on a substrate to be developed; and spraying a regulating liquid by a concentration regulating assembly onto a target developing region on the substrate to be developed to change concentration of the developing agents.
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公开(公告)号：US09721979B1
公开(公告)日：2017-08-01
申请号：US15106052
申请日：2016-01-14
发明人： Zheng Liu , Tsung Chieh Kuo , Xi Chen , Xiaoxiang Zhang , Zhichao Zhang , Mingxuan Liu
IPC分类号： H01L21/00 , H01L21/84 , G02F1/1343 , H01L27/12 , H01L29/66 , G02F1/1368 , G02F1/1333
CPC分类号： H01L27/1288 , G02F1/133345 , G02F1/134309 , G02F1/13439 , G02F1/136227 , G02F1/1368 , G02F2001/134318 , G02F2001/134372 , G02F2201/121 , G02F2201/123 , H01L21/77 , H01L27/12 , H01L29/66765
摘要： A method for manufacturing an array substrate comprises: forming a pixel electrode and a gate of a thin film transistor on a substrate; forming a gate insulating layer; forming an active layer and a source and a drain, which are provided on the active layer, of the thin film transistor by a patterning process; forming a passivation layer; forming a main via penetrating through the gate insulating layer and the passivation layer and a main-via extension portion under a portion of the drain by a patterning process, wherein the main via is connected to the main-via extension portion; removing a portion of the drain which protrudes above the main-via extension portion so as to form a final via; and forming a connection electrode and a common electrode, wherein the connection electrode electrically connects the drain to the pixel electrode through the final via.
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公开(公告)号：US09410897B2
公开(公告)日：2016-08-09
申请号：US14548997
申请日：2014-11-20
发明人： Shoukun Wang , Huibin Guo , Yuchun Feng , Liangliang Li , Xiaoxiang Zhang , Zongjie Guo
CPC分类号： G01N21/8422 , G01B11/00 , G01B11/14 , G01B11/24 , G01N21/8851 , G01N2201/10
摘要： The present invention provides a film edge detecting method and a film edge detecting device. The film edge detecting method is used for detecting a film edge of a film layer formed on a substrate, the film layer comprises a patterned film layer, the method includes: forming at least one scale pattern in the patterned film layer, a film edge of the patterned film layer corresponding to an edge of the scale pattern; obtaining a patterned film edge indication value of the edge of the scale pattern; and obtaining a second distance, which is a distance between the film edge of the non-patterned film layer and a corresponding edge of the substrate, based on the non-patterned film edge indication value and a preset reference value of the corresponding edge of the substrate.
摘要翻译： 本发明提供一种胶片边缘检测方法和胶片边缘检测装置。 膜边缘检测方法用于检测在基板上形成的膜层的膜边缘，该膜层包括图案化膜层，该方法包括：在图案化膜层中形成至少一个标尺图案， 所述图案化膜层对应于所述标尺图案的边缘; 获得刻度图案的边缘的图案化胶片边缘指示值; 并且基于未图案化的膜边缘指示值和相对于所述基板的相应边缘的预设参考值，获得作为所述非图案化膜层的膜边缘与所述基板的相应边缘之间的距离的第二距离 基质。
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公开(公告)号：US20210165293A1
公开(公告)日：2021-06-03
申请号：US16825084
申请日：2020-03-20
发明人： Yihe Jia , Xiangqian Ding , Xiaoxiang Zhang , Hao Han , Lianjie Yang , Yongzhi Song , Yan Pang
IPC分类号： G02F1/1362
摘要： The preset disclosure provides an array substrate and a method for manufacturing the same, a display panel and a display device. The array substrate includes: a base substrate; data lines and pixel electrodes located on the base substrate, and a light shielding structure located on a side of the data lines close to the base substrate, orthographic projections of the gaps on the base substrate are located within an orthographic projection of the light shielding structure on the base substrate, and the light shielding structure includes a metal layer and a first transparent layer located on a side of the metal layer away from the base substrate.
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公开(公告)号：US20190081084A1
公开(公告)日：2019-03-14
申请号：US15769492
申请日：2017-11-03
发明人： Wenqing Xu , Mingxuan Liu , Jing Wang , Xiaoxiang Zhang , Huibin Guo
IPC分类号： H01L27/12 , H01L27/32 , G09G3/3225
摘要： An array substrate includes a pixel circuit and a light-emitting diode. The pixel circuit includes a driving transistor including a first active medium made of polysilicon, and a switching transistor including a second active medium made of polysilicon. The first active medium has a first grain size. The second active medium has a second grain size larger than the first grain size. The light-emitting diode is coupled to the pixel circuit.
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