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18 条记录 (耗时 0.042 秒)

    Mixed frequency CVD apparatus
    7.
    发明授权
    Mixed frequency CVD apparatus 失效
    混合频率CVD装置

    公开(公告)号：US6098568A

    公开(公告)日：2000-08-08

    申请号：US980520

    申请日：1997-12-01

    申请人： Sebastien Raoux ,  Mandar Mudholkar ,  William N. Taylor ,  Mark Fodor ,  Judy Huang ,  David Silvetti ,  David Cheung ,  Kevin Fairbairn

    发明人： Sebastien Raoux ,  Mandar Mudholkar ,  William N. Taylor ,  Mark Fodor ,  Judy Huang ,  David Silvetti ,  David Cheung ,  Kevin Fairbairn

    IPC分类号： H05H1/46 ,  C23C16/505 ,  C23C16/509 ,  C23C16/517 ,  H01J37/32 ,  H01L21/31 ,  C23C16/00

    CPC分类号： H01J37/32174 ,  C23C16/5096 ,  C23C16/517 ,  H01J37/32082

    摘要： A substrate processing system that includes a ceramic substrate holder having an RF electrode embedded within the substrate holder and a gas inlet manifold spaced apart from the substrate holder. The gas inlet manifold supplies one or more process gases through multiple conical holes to a reaction zone of a substrate processing chamber within the processing system and also acts as a second RF electrode. Each conical hole has an outlet that opens into the reaction zone and an inlet spaced apart from the outlet that is smaller in diameter than said outlet. A mixed frequency RF power supply is connected to the substrate processing system with a high frequency RF power source connected to the gas inlet manifold electrode and a low frequency RF power source connected to the substrate holder electrode. An RF filter and matching network decouples the high frequency waveform from the low frequency waveform. Such a configuration allows for an enlarged process regime and provides for deposition of films, including silicon nitride films, having physical characteristics that were previously unattainable.

    摘要翻译： 一种衬底处理系统，其包括陶瓷衬底保持器，其具有嵌入衬底保持器内的RF电极和与衬底保持器间隔开的气体入口歧管。 气体入口歧管将一个或多个处理气体通过多个锥形孔提供到处理系统内的衬底处理室的反应区，并且还用作第二RF电极。 每个锥形孔具有通向反应区的出口和与出口间隔开的直径小于所述出口的入口。 混合频率RF电源与连接到气体入口歧管电极的高频RF电源和连接到衬底保持器电极的低频RF电源连接到衬底处理系统。 RF滤波器和匹配网络将高频波形与低频波形分离。 这种构造允许扩大的工艺方案并且提供具有先前无法实现的物理特性的膜（包括氮化硅膜）的沉积。

    Mixed frequency CVD process
    8.
    发明授权
    Mixed frequency CVD process 有权
    混合频率CVD工艺

    公开(公告)号：US06358573B1

    公开(公告)日：2002-03-19

    申请号：US09585258

    申请日：2000-06-02

    申请人： Sébastien Raoux ,  Mandar Mudholkar ,  William N. Taylor ,  Mark Fodor ,  Judy Huang ,  David Silvetti ,  David Cheung ,  Kevin Fairbairn

    发明人： Sébastien Raoux ,  Mandar Mudholkar ,  William N. Taylor ,  Mark Fodor ,  Judy Huang ,  David Silvetti ,  David Cheung ,  Kevin Fairbairn

    IPC分类号： H05H124

    CPC分类号： H01J37/32174 ,  C23C16/5096 ,  C23C16/517 ,  H01J37/32082

    摘要： A substrate processing system that includes a ceramic substrate holder having an RF electrode embedded within the substrate holder and a gas inlet manifold spaced apart from the substrate holder. The gas inlet manifold supplies one or more process gases through multiple conical holes to a reaction zone of a substrate processing chamber within the processing system and also acts as a second RF electrode. Each conical hole has an outlet that opens into the reaction zone and an inlet spaced apart from the outlet that is smaller in diameter than said outlet. A mixed frequency RF power supply is connected to the substrate processing system with a high frequency RF power source connected to the gas inlet manifold electrode and a low frequency RF power source connected to the substrate holder electrode. An RF filter and matching network decouples the high frequency waveform from the low frequency waveform. Such a configuration allows for an enlarged process regime and provides for deposition of films, including silicon nitride films, having physical characteristics that were previously unattainable.

    摘要翻译： 一种衬底处理系统，其包括陶瓷衬底保持器，其具有嵌入衬底保持器内的RF电极和与衬底保持器间隔开的气体入口歧管。 气体入口歧管将一个或多个处理气体通过多个锥形孔提供到处理系统内的衬底处理室的反应区，并且还用作第二RF电极。 每个锥形孔具有通向反应区的出口和与出口间隔开的直径小于所述出口的入口。 混合频率RF电源与连接到气体入口歧管电极的高频RF电源和连接到衬底保持器电极的低频RF电源连接到衬底处理系统。 RF滤波器和匹配网络将高频波形与低频波形分离。 这种构造允许扩大的工艺方案并且提供具有先前无法实现的物理特性的膜（包括氮化硅膜）的沉积。

    Hardware development to reduce bevel deposition
    9.
    发明申请
    Hardware development to reduce bevel deposition 审中-公开
    硬件开发减少斜面沉积

    公开(公告)号：US20050196971A1

    公开(公告)日：2005-09-08

    申请号：US11043724

    申请日：2005-01-26

    申请人： Soovo Sen ,  Mark Fodor ,  Visweswaren Sivaramakrishnan ,  Junting Liu

    发明人： Soovo Sen ,  Mark Fodor ,  Visweswaren Sivaramakrishnan ,  Junting Liu

    IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/509 ,  H01L21/31 ,  H01L21/469 ,  H01L21/76

    CPC分类号： C23C16/4585 ,  C23C16/45521 ,  C23C16/5096

    摘要： Embodiments in accordance with the present invention relate to various techniques which may be employed alone or in combination, to reduce or eliminate the deposition of material on the bevel of a semiconductor workpiece. In one approach, a shadow ring overlies the edge of the substrate to impede the flow of gases to bevel regions. The geometric feature at the edge of the shadow ring directs the flow of gases toward the wafer in order to maintain thickness uniformity across the wafer while shadowing the edge. In another approach, a substrate heater/support is configured to flow purge gases to the edge of a substrate being supported. These purge gases prevent process gases from reaching the substrate edge and depositing material on bevel regions.

    摘要翻译： 根据本发明的实施例涉及可以单独使用或组合使用以减少或消除材料在半导体工件的斜面上的沉积的各种技术。 在一种方法中，阴影环覆盖在衬底的边缘上以阻止气体流向斜面区域。 阴影环边缘处的几何特征将气体流引导到晶片，以便在遮蔽边缘的同时保持晶片的厚度均匀性。 在另一种方法中，衬底加热器/支撑件构造成将净化气体流动到被支撑的衬底的边缘。 这些吹扫气体可防止工艺气体到达衬底边缘并将材料沉积在斜面区域上。