利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

44 条记录 (耗时 0.039 秒)

    Mixed frequency CVD apparatus
    3.
    发明授权
    Mixed frequency CVD apparatus 失效
    混合频率CVD装置

    公开(公告)号：US6098568A

    公开(公告)日：2000-08-08

    申请号：US980520

    申请日：1997-12-01

    申请人： Sebastien Raoux ,  Mandar Mudholkar ,  William N. Taylor ,  Mark Fodor ,  Judy Huang ,  David Silvetti ,  David Cheung ,  Kevin Fairbairn

    发明人： Sebastien Raoux ,  Mandar Mudholkar ,  William N. Taylor ,  Mark Fodor ,  Judy Huang ,  David Silvetti ,  David Cheung ,  Kevin Fairbairn

    IPC分类号： H05H1/46 ,  C23C16/505 ,  C23C16/509 ,  C23C16/517 ,  H01J37/32 ,  H01L21/31 ,  C23C16/00

    CPC分类号： H01J37/32174 ,  C23C16/5096 ,  C23C16/517 ,  H01J37/32082

    摘要： A substrate processing system that includes a ceramic substrate holder having an RF electrode embedded within the substrate holder and a gas inlet manifold spaced apart from the substrate holder. The gas inlet manifold supplies one or more process gases through multiple conical holes to a reaction zone of a substrate processing chamber within the processing system and also acts as a second RF electrode. Each conical hole has an outlet that opens into the reaction zone and an inlet spaced apart from the outlet that is smaller in diameter than said outlet. A mixed frequency RF power supply is connected to the substrate processing system with a high frequency RF power source connected to the gas inlet manifold electrode and a low frequency RF power source connected to the substrate holder electrode. An RF filter and matching network decouples the high frequency waveform from the low frequency waveform. Such a configuration allows for an enlarged process regime and provides for deposition of films, including silicon nitride films, having physical characteristics that were previously unattainable.

    摘要翻译： 一种衬底处理系统，其包括陶瓷衬底保持器，其具有嵌入衬底保持器内的RF电极和与衬底保持器间隔开的气体入口歧管。 气体入口歧管将一个或多个处理气体通过多个锥形孔提供到处理系统内的衬底处理室的反应区，并且还用作第二RF电极。 每个锥形孔具有通向反应区的出口和与出口间隔开的直径小于所述出口的入口。 混合频率RF电源与连接到气体入口歧管电极的高频RF电源和连接到衬底保持器电极的低频RF电源连接到衬底处理系统。 RF滤波器和匹配网络将高频波形与低频波形分离。 这种构造允许扩大的工艺方案并且提供具有先前无法实现的物理特性的膜（包括氮化硅膜）的沉积。

    Mixed frequency CVD process
    5.
    发明授权
    Mixed frequency CVD process 有权
    混合频率CVD工艺

    公开(公告)号：US06358573B1

    公开(公告)日：2002-03-19

    申请号：US09585258

    申请日：2000-06-02

    申请人： Sébastien Raoux ,  Mandar Mudholkar ,  William N. Taylor ,  Mark Fodor ,  Judy Huang ,  David Silvetti ,  David Cheung ,  Kevin Fairbairn

    发明人： Sébastien Raoux ,  Mandar Mudholkar ,  William N. Taylor ,  Mark Fodor ,  Judy Huang ,  David Silvetti ,  David Cheung ,  Kevin Fairbairn

    IPC分类号： H05H124

    CPC分类号： H01J37/32174 ,  C23C16/5096 ,  C23C16/517 ,  H01J37/32082

    摘要： A substrate processing system that includes a ceramic substrate holder having an RF electrode embedded within the substrate holder and a gas inlet manifold spaced apart from the substrate holder. The gas inlet manifold supplies one or more process gases through multiple conical holes to a reaction zone of a substrate processing chamber within the processing system and also acts as a second RF electrode. Each conical hole has an outlet that opens into the reaction zone and an inlet spaced apart from the outlet that is smaller in diameter than said outlet. A mixed frequency RF power supply is connected to the substrate processing system with a high frequency RF power source connected to the gas inlet manifold electrode and a low frequency RF power source connected to the substrate holder electrode. An RF filter and matching network decouples the high frequency waveform from the low frequency waveform. Such a configuration allows for an enlarged process regime and provides for deposition of films, including silicon nitride films, having physical characteristics that were previously unattainable.

    摘要翻译： 一种衬底处理系统，其包括陶瓷衬底保持器，其具有嵌入衬底保持器内的RF电极和与衬底保持器间隔开的气体入口歧管。 气体入口歧管将一个或多个处理气体通过多个锥形孔提供到处理系统内的衬底处理室的反应区，并且还用作第二RF电极。 每个锥形孔具有通向反应区的出口和与出口间隔开的直径小于所述出口的入口。 混合频率RF电源与连接到气体入口歧管电极的高频RF电源和连接到衬底保持器电极的低频RF电源连接到衬底处理系统。 RF滤波器和匹配网络将高频波形与低频波形分离。 这种构造允许扩大的工艺方案并且提供具有先前无法实现的物理特性的膜（包括氮化硅膜）的沉积。

    Heated electrostatic particle trap for in-situ vacuum line cleaning of a substrated processing
    6.
    发明授权
    Heated electrostatic particle trap for in-situ vacuum line cleaning of a substrated processing 有权
    加热静电颗粒捕集器，用于原位真空管线清洗的底层处理

    公开(公告)号：US06354241B1

    公开(公告)日：2002-03-12

    申请号：US09354925

    申请日：1999-07-15

    申请人： Tsutomu Tanaka ,  Chau Nguyen ,  Hari Ponnekanti ,  Kevin Fairbairn ,  Sébastien Raoux ,  Mark Fodor

    发明人： Tsutomu Tanaka ,  Chau Nguyen ,  Hari Ponnekanti ,  Kevin Fairbairn ,  Sébastien Raoux ,  Mark Fodor

    IPC分类号： C23C1600

    CPC分类号： C23C16/4412 ,  B01D49/00 ,  B01D51/02

    摘要： An apparatus and method for preventing particulate matter and residue build-up within a vacuum exhaust line of a semiconductor-processing device. The apparatus includes a vessel chamber having an inlet, an outlet and a fluid conduit between the two that fluidly couples the outlet with the inlet. The fluid conduit includes first and second collection sections. The first collection section includes a first plurality of electrodes aligned parallel to a first plane and the second collection section includes a second plurality of electrodes aligned parallel to a second plane that is substantially perpendicular to the first plane. The electrodes are connected to a voltage differential to form an electrostatic particle collector that traps electrically charged particles and particulate matter flowing through the fluid conduit. Particles are collected on the electrodes within the fluid conduit during substrate processing operations such as CVD deposition steps. Then, during a chamber clean operation, unreacted etchant gases used to clean the substrate processing chamber are exhausted through the foreline and into the apparatus of the present invention where they react with the collected particles and powder to convert the solid material into gaseous matter that can be pumped through the foreline without damaging the vacuum pump or other processing equipment.

    摘要翻译： 一种用于防止半导体处理装置的真空排气管线内的颗粒物质和残渣积聚的装置和方法。 该装置包括容器腔室，其具有入口，出口和两者之间的流体导管，以使出口与入口流体耦合。 流体导管包括第一和第二收集部分。 第一收集部分包括平行于第一平面排列的第一多个电极，第二收集部分包括平行于基本上垂直于第一平面的第二平面排列的第二多个电极。 电极连接到电压差以形成静电颗粒收集器，其捕获带电粒子和流过流体导管的颗粒物质。 在诸如CVD沉积步骤的衬底处理操作期间，将粒子收集在流体导管内的电极上。 然后，在室清洁操作期间，用于清洁基板处理室的未反应的蚀刻剂气体通过前级管线排出并进入本发明的装置中，它们与收集的颗粒和粉末反应，将固体材料转化成气态物质， 泵送通过前级管线，而不会损坏真空泵或其他加工设备。

    Apparatus and methods for upgraded substrate processing system with microwave plasma source
    7.
    发明授权
    Apparatus and methods for upgraded substrate processing system with microwave plasma source 有权
    具有微波等离子体源的升级基板处理系统的装置和方法

    公开(公告)号：US06230652B1

    公开(公告)日：2001-05-15

    申请号：US09480923

    申请日：2000-01-11

    申请人： Tsutomu Tanaka ,  Mukul Kelkar ,  Kevin Fairbairn ,  Hari Ponnekanti ,  David Cheung

    发明人： Tsutomu Tanaka ,  Mukul Kelkar ,  Kevin Fairbairn ,  Hari Ponnekanti ,  David Cheung

    IPC分类号： C23C1600

    CPC分类号： H01J37/32862 ,  C23C16/511 ,  C23C16/52 ,  H01J37/32192 ,  H01J37/32357

    摘要： An apparatus and methods for an upgraded CVD system that provides a plasma for efficiently cleaning a chamber, according to a specific embodiment. Etching or depositing a layer onto a substrate also may be achieved using the upgraded CVD system of the present invention. In a specific embodiment, the present invention provides an easily removable, conveniently handled, and relatively inexpensive microwave plasma source as a retrofit for or a removable addition to existing CVD apparatus. In a preferred embodiment, the remote microwave plasma source efficiently provides a plasma without need for liquid-cooling the plasma applicator tube. In another embodiment, the present invention provides an improved CVD apparatus or retrofit of existing CVD apparatus capable of producing a plasma with the ability to efficiently clean the chamber when needed.

    摘要翻译： 根据具体实施例的用于提供用于有效清洁腔室的等离子体的升级CVD系统的装置和方法。 使用本发明的升级的CVD系统也可以实现在基板上的蚀刻或沉积层。 在一个具体实施方案中，本发明提供了一种易于拆卸，方便处理且相对便宜的微波等离子体源，作为对现有CVD设备的改进或可移除的添加。 在优选实施例中，远程微波等离子体源有效地提供等离子体，而不需要等离子体施加管的液体冷却。 在另一个实施方案中，本发明提供了一种改进的CVD装置或改进现有的CVD装置，其能够产生等离子体，其能够在需要时有效地清洁腔室。

    Gas delivery system
    8.
    发明授权
    Gas delivery system 失效
    气体输送系统

    公开(公告)号：US5911834A

    公开(公告)日：1999-06-15

    申请号：US751484

    申请日：1996-11-18

    申请人： Kevin Fairbairn ,  Hari K. Ponnekanti ,  David Cheung

    发明人： Kevin Fairbairn ,  Hari K. Ponnekanti ,  David Cheung

    IPC分类号： B01J4/00 ,  C23C14/56 ,  C23C16/44 ,  C23C16/455 ,  C23C16/54 ,  H01L21/00 ,  C23C16/00

    CPC分类号： C23C16/45574 ,  B01J4/00 ,  C23C14/566 ,  C23C16/4402 ,  C23C16/4405 ,  C23C16/45565 ,  C23C16/45572 ,  C23C16/54 ,  H01L21/67017

    摘要： The present invention provides a method and apparatus for delivering one or more process gases and one or more cleaning gases into one or more processing regions. The gas distribution system includes a gas inlet and a gas conduit, each disposed to deliver one or more gases into the chamber via a desired diffusing passage. Also, a gas delivery method and apparatus for splitting a gas feed into multiple feed lines is provided having a gas filter disposed upstream from a splitting coupling disposed in the line.

    摘要翻译： 本发明提供了一种将一种或多种工艺气体和一种或多种清洁气体输送到一个或多个处理区域中的方法和装置。 气体分配系统包括气体入口和气体导管，每个气体导管和气体导管设置成经由期望的扩散通道将一种或多种气体输送到腔室中。 此外，提供了一种用于将气体进料分离成多个进料管线的气体输送方法和装置，其具有设置在管线中的分离联接器的上游的气体过滤器。

    Apparatus and methods for upgraded substrate processing system with microwave plasma source
    9.
    发明授权
    Apparatus and methods for upgraded substrate processing system with microwave plasma source 有权
    具有微波等离子体源的升级基板处理系统的装置和方法

    公开(公告)号：US06361707B1

    公开(公告)日：2002-03-26

    申请号：US09660322

    申请日：2000-09-12

    申请人： Tsutomu Tanaka ,  Mukul Kelkar ,  Kevin Fairbairn ,  Hari Ponnekanti ,  David Cheung

    发明人： Tsutomu Tanaka ,  Mukul Kelkar ,  Kevin Fairbairn ,  Hari Ponnekanti ,  David Cheung

    IPC分类号： H01L2100

    CPC分类号： H01J37/32862 ,  C23C16/511 ,  C23C16/52 ,  H01J37/32192 ,  H01J37/32357

    摘要： An apparatus and methods for an upgraded CVD system that provides a plasma for efficiently cleaning a chamber, according to a specific embodiment. Etching or depositing a layer onto a substrate also may be achieved using the upgraded CVD system of the present invention. In a specific embodiment, the present invention provides an easily removable, conveniently handled, and relatively inexpensive microwave plasma source as a retrofit for or a removable addition to existing CVD apparatus. In a preferred embodiment, the remote microwave plasma source efficiently provides a plasma without need for liquid-cooling the plasma applicator tube. In another embodiment, the present invention provides an improved CVD apparatus or retrofit of existing CVD apparatus capable of producing a plasma with the ability to efficiently clean the chamber when needed.

    摘要翻译： 根据具体实施例的用于提供用于有效清洁腔室的等离子体的升级CVD系统的装置和方法。 使用本发明的升级的CVD系统也可以实现在基板上的蚀刻或沉积层。 在一个具体实施方案中，本发明提供了一种易于拆卸，方便处理且相对便宜的微波等离子体源，作为对现有CVD设备的改进或可移除的添加。 在优选实施例中，远程微波等离子体源有效地提供等离子体，而不需要等离子体施加管的液体冷却。 在另一个实施方案中，本发明提供了一种改进的CVD装置或改进现有的CVD装置，其能够产生等离子体，其能够在需要时有效地清洁腔室。