公开(公告)号：US6098568A

公开(公告)日：2000-08-08

申请号：US980520

申请日：1997-12-01

申请人： Sebastien Raoux ,  Mandar Mudholkar ,  William N. Taylor ,  Mark Fodor ,  Judy Huang ,  David Silvetti ,  David Cheung ,  Kevin Fairbairn

发明人： Sebastien Raoux ,  Mandar Mudholkar ,  William N. Taylor ,  Mark Fodor ,  Judy Huang ,  David Silvetti ,  David Cheung ,  Kevin Fairbairn

IPC分类号： H05H1/46 ,  C23C16/505 ,  C23C16/509 ,  C23C16/517 ,  H01J37/32 ,  H01L21/31 ,  C23C16/00

CPC分类号： H01J37/32174 ,  C23C16/5096 ,  C23C16/517 ,  H01J37/32082

摘要： A substrate processing system that includes a ceramic substrate holder having an RF electrode embedded within the substrate holder and a gas inlet manifold spaced apart from the substrate holder. The gas inlet manifold supplies one or more process gases through multiple conical holes to a reaction zone of a substrate processing chamber within the processing system and also acts as a second RF electrode. Each conical hole has an outlet that opens into the reaction zone and an inlet spaced apart from the outlet that is smaller in diameter than said outlet. A mixed frequency RF power supply is connected to the substrate processing system with a high frequency RF power source connected to the gas inlet manifold electrode and a low frequency RF power source connected to the substrate holder electrode. An RF filter and matching network decouples the high frequency waveform from the low frequency waveform. Such a configuration allows for an enlarged process regime and provides for deposition of films, including silicon nitride films, having physical characteristics that were previously unattainable.

摘要翻译： 一种衬底处理系统，其包括陶瓷衬底保持器，其具有嵌入衬底保持器内的RF电极和与衬底保持器间隔开的气体入口歧管。 气体入口歧管将一个或多个处理气体通过多个锥形孔提供到处理系统内的衬底处理室的反应区，并且还用作第二RF电极。 每个锥形孔具有通向反应区的出口和与出口间隔开的直径小于所述出口的入口。 混合频率RF电源与连接到气体入口歧管电极的高频RF电源和连接到衬底保持器电极的低频RF电源连接到衬底处理系统。 RF滤波器和匹配网络将高频波形与低频波形分离。 这种构造允许扩大的工艺方案并且提供具有先前无法实现的物理特性的膜（包括氮化硅膜）的沉积。

公开(公告)号：US06358573B1

公开(公告)日：2002-03-19

申请号：US09585258

申请日：2000-06-02

申请人： Sébastien Raoux ,  Mandar Mudholkar ,  William N. Taylor ,  Mark Fodor ,  Judy Huang ,  David Silvetti ,  David Cheung ,  Kevin Fairbairn

发明人： Sébastien Raoux ,  Mandar Mudholkar ,  William N. Taylor ,  Mark Fodor ,  Judy Huang ,  David Silvetti ,  David Cheung ,  Kevin Fairbairn

IPC分类号： H05H124

CPC分类号： H01J37/32174 ,  C23C16/5096 ,  C23C16/517 ,  H01J37/32082

摘要： A substrate processing system that includes a ceramic substrate holder having an RF electrode embedded within the substrate holder and a gas inlet manifold spaced apart from the substrate holder. The gas inlet manifold supplies one or more process gases through multiple conical holes to a reaction zone of a substrate processing chamber within the processing system and also acts as a second RF electrode. Each conical hole has an outlet that opens into the reaction zone and an inlet spaced apart from the outlet that is smaller in diameter than said outlet. A mixed frequency RF power supply is connected to the substrate processing system with a high frequency RF power source connected to the gas inlet manifold electrode and a low frequency RF power source connected to the substrate holder electrode. An RF filter and matching network decouples the high frequency waveform from the low frequency waveform. Such a configuration allows for an enlarged process regime and provides for deposition of films, including silicon nitride films, having physical characteristics that were previously unattainable.

摘要翻译： 一种衬底处理系统，其包括陶瓷衬底保持器，其具有嵌入衬底保持器内的RF电极和与衬底保持器间隔开的气体入口歧管。 气体入口歧管将一个或多个处理气体通过多个锥形孔提供到处理系统内的衬底处理室的反应区，并且还用作第二RF电极。 每个锥形孔具有通向反应区的出口和与出口间隔开的直径小于所述出口的入口。 混合频率RF电源与连接到气体入口歧管电极的高频RF电源和连接到衬底保持器电极的低频RF电源连接到衬底处理系统。 RF滤波器和匹配网络将高频波形与低频波形分离。 这种构造允许扩大的工艺方案并且提供具有先前无法实现的物理特性的膜（包括氮化硅膜）的沉积。

公开(公告)号：US20050023694A1

公开(公告)日：2005-02-03

申请号：US10924551

申请日：2004-08-24

申请人： Claes Bjorkman ,  Melissa Yu ,  Hongqing Shan ,  David Cheung ,  Wai-Fan Yau ,  Kuowei Liu ,  Nasreen Chapra ,  Gerald Yin ,  Farhad Moghadam ,  Judy Huang ,  Dennis Yost ,  Betty Tang ,  Yunsang Kim

发明人： Claes Bjorkman ,  Melissa Yu ,  Hongqing Shan ,  David Cheung ,  Wai-Fan Yau ,  Kuowei Liu ,  Nasreen Chapra ,  Gerald Yin ,  Farhad Moghadam ,  Judy Huang ,  Dennis Yost ,  Betty Tang ,  Yunsang Kim

IPC分类号： H01L21/302 ,  A01C15/02 ,  A01C17/00 ,  C23C16/40 ,  H01L21/3065 ,  H01L21/31 ,  H01L21/311 ,  H01L21/312 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522 ,  H01L23/48

CPC分类号： H01L21/76835 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/3121 ,  H01L21/31612 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76829

摘要： A method of depositing and etching dielectric layers having low dielectric constants and etch rates that vary by at least 3:1 for formation of horizontal interconnects. The amount of carbon or hydrogen in the dielectric layer is varied by changes in deposition conditions to provide low k dielectric layers that can replace etch stop layers or conventional dielectric layers in damascene applications. A dual damascene structure having two or more dielectric layers with dielectric constants lower than about 4 can be deposited in a single reactor and then etched to form vertical and horizontal interconnects by varying the concentration of a carbon:oxygen gas such as carbon monoxide. The etch gases for forming vertical interconnects preferably comprises CO and a fluorocarbon, and CO is preferably excluded from etch gases for forming horizontal interconnects.

摘要翻译： 沉积和蚀刻具有低介电常数和蚀刻速率的介电层的方法，该介电层变化至少3:1以形成水平互连。 电介质层中的碳或氢的量可以通过沉积条件的变化来改变，以提供低k电介质层，其可代替蚀刻停止层或在镶嵌应用中的常规电介质层。 具有介电常数低于约4的两个或多个电介质层的双镶嵌结构可以沉积在单个反应器中，然后通过改变碳：氧气如一氧化碳的浓度进行蚀刻以形成垂直和水平互连。 用于形成垂直互连的蚀刻气体优选地包括CO和碳氟化合物，并且CO优选从用于形成水平互连的蚀刻气体中排除。

公开(公告)号：US06395092B1

公开(公告)日：2002-05-28

申请号：US09550151

申请日：2000-04-17

申请人： Dian Sugiarto ,  Judy Huang ,  David Cheung

发明人： Dian Sugiarto ,  Judy Huang ,  David Cheung

IPC分类号： C23C1600

CPC分类号： H01L21/02274 ,  C23C16/401 ,  H01L21/02131 ,  H01L21/31625

摘要： A silicon oxide film is deposited on a substrate by first introducing a process gas into a chamber. The process gas includes a gaseous source of silicon (such as silane), a gaseous source of fluorine (such as SiF4), a gaseous source of oxygen (such as nitrous oxide), and a gaseous source of nitrogen (such as N2). A plasma is formed from the process gas by applying a RF power component. Deposition is carried out at a rate of at least about 1.5 &mgr;m/min. The resulting FSG film is stable and has a low dielectric constant.

摘要翻译： 首先将工艺气体引入室中，将氧化硅膜沉积在衬底上。 工艺气体包括硅的气体源（例如硅烷），气体的氟源（例如SiF 4），气体的氧源（例如一氧化二氮）和气态的氮源（例如N 2）。 通过施加RF功率分量从处理气体形成等离子体。 以至少约1.5mum / min的速率进行沉积。 所得的FSG膜是稳定的并且具有低的介电常数。

公开(公告)号：US6077764A

公开(公告)日：2000-06-20

申请号：US837641

申请日：1997-04-21

申请人： Dian Sugiarto ,  Judy Huang ,  David Cheung

发明人： Dian Sugiarto ,  Judy Huang ,  David Cheung

IPC分类号： C23C16/40 ,  H01L21/316 ,  H01L21/44 ,  H01L21/4763

CPC分类号： H01L21/02274 ,  C23C16/401 ,  H01L21/02131 ,  H01L21/31625

摘要： A silicon oxide film is deposited on a substrate by first introducing a process gas into a chamber. The process gas includes a gaseous source of silicon (such as silane), a gaseous source of fluorine (such as SiF.sub.4), a gaseous source of oxygen (such as nitrous oxide), and a gaseous source of nitrogen (such as N.sub.2). A plasma is formed from the process gas by applying a RF power component. Deposition is carried out at a rate of at least about 1.5 .mu.m/min. The resulting FSG film is stable and has a low dielectric constant.

摘要翻译： 首先将工艺气体引入室中，将氧化硅膜沉积在衬底上。 工艺气体包括硅的气体源（例如硅烷），气体的氟源（例如SiF 4），气体的氧源（例如一氧化二氮）和气态的氮源（例如N 2）。 通过施加RF功率分量从处理气体形成等离子体。 以至少约1.5m / min的速率进行沉积。 所得的FSG膜是稳定的并且具有低的介电常数。

公开(公告)号：US20060089007A1

公开(公告)日：2006-04-27

申请号：US11301063

申请日：2005-12-12

申请人： Judy Huang

发明人： Judy Huang

IPC分类号： H01L21/4763 ,  H01L21/302 ,  H01L21/31

CPC分类号： H01L21/76829 ,  C23C16/325 ,  C30B25/105 ,  C30B29/36 ,  H01L21/02381 ,  H01L21/02447 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/0276 ,  H01L21/0445 ,  H01L21/314 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76834 ,  H01L23/53228 ,  H01L23/53238 ,  H01L23/5329 ,  H01L2924/0002 ,  Y10S438/931 ,  Y10S438/932 ,  Y10S438/952 ,  H01L2924/00

摘要： The present invention provides a SiC material, formed according to certain process regimes, useful as a barrier layer, etch stop, and/or an ARC, in multiple levels, including the pre-metal dielectric (PMD) level, in IC applications and provides a dielectric layer deposited in situ with the SiC material for the barrier layers, and etch stops, and ARCs. The dielectric layer can be deposited with different precursors as the SiC material, but preferably with the same or similar precursors as the SiC material. The present invention is particularly useful for ICs using high diffusion copper as a conductive material. The invention may also utilize a plasma containing a reducing agent, such as ammonia, to reduce any oxides that may occur, particularly on metal surfaces such as copper filled features. The invention also provides processing regimes that include using an organosilane as a silicon and carbon source, perhaps independently of any other carbon source or hydrogen source, and preferably in the absence of a substantial amount of oxygen to produce a SiC with a dielectric constant of less than 7.0. This particular SiC material is useful in complex structures, such as a damascene structure and is conducive to in situ deposition, especially when used in multiple capacities for the different layers, such as the barrier layer, the etch stop, and the ARC and can include in situ deposition of the associated dielectric layer(s).

摘要翻译： 本发明提供了在IC应用中，根据某些工艺方案形成的SiC材料，其可用作包括前金属电介质（PMD）水平在内的多层次的阻挡层，蚀刻停止层和/或ARC，并且提供 原位沉积有用于阻挡层的SiC材料的介电层，以及蚀刻停止层和ARC。 介电层可以作为SiC材料沉积不同的前体，但优选与SiC材料相同或相似的前体沉积。 本发明对于使用高扩散铜作为导电材料的IC特别有用。 本发明还可以利用含有诸如氨的还原剂的等离子体来减少可能发生的任何氧化物，特别是在诸如铜填充特征的金属表面上。 本发明还提供了处理方案，其包括使用有机硅烷作为硅和碳源，可能独立于任何其它碳源或氢源，并且优选在不存在大量氧的情况下产生介电常数较小的SiC 超过7.0。 这种特殊的SiC材料可用于复杂的结构，例如镶嵌结构，并且有利于原位沉积，特别是当用于不同层的多个容量时，例如阻挡层，蚀刻停止层和ARC，并且可以包括 相关电介质层的原位沉积。

公开(公告)号：US06821571B2

公开(公告)日：2004-11-23

申请号：US09336525

申请日：1999-06-18

申请人： Judy Huang

发明人： Judy Huang

IPC分类号： C23C1402

CPC分类号： H01L21/02126 ,  C23C16/325 ,  C23C16/56 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02323 ,  H01L21/0234 ,  H01L21/3105 ,  H01L21/314 ,  H01L21/3146 ,  H01L21/31633

摘要： The present invention generally provides improved adhesion and oxidation resistance of carbon-containing layers without the need for an additional deposited layer. In one aspect, the invention treats an exposed surface of carbon-containing material, such as silicon carbide, with an inert gas plasma, such as a helium (He), argon (Ar), or other inert gas plasma, or an oxygen-containing plasma such as a nitrous oxide (N2O) plasma. Other carbon-containing materials can include organic polymeric materials, amorphous carbon, amorphous fluorocarbon, carbon containing oxides, and other carbon-containing materials. The plasma treatment is preferably performed in situ following the deposition of the layer to be treated. Preferably, the processing chamber in which in situ deposition and plasma treatment occurs is configured to deliver the same or similar precursors for the carbon-containing layer(s). However, the layer(s) can be deposited with different precursors. The invention also provides processing regimes that generate the treatment plasma and systems which use the treatment plasma. The carbon-containing material can be used in a variety of layers, such as barrier layers, etch stops, ARCs, passivation layers, and dielectric layers.

摘要翻译： 本发明通常提供了改进的含碳层的粘附性和抗氧化性，而不需要额外的沉积层。 一方面，本发明使用诸如氦（He），氩（Ar）或其它惰性气体等离子体或惰性气体等离子体的惰性气体等离子体处理含碳材料如碳化硅的暴露表面， 含有等离子体，如一氧化二氮（N2O）等离子体。 其它含碳材料可以包括有机聚合材料，无定形碳，无定形碳氟化合物，含碳氧化物和其它含碳材料。 等离子体处理优选在沉积待处理层之后原位进行。 优选地，其中发生原位沉积和等离子体处理的处理室被配置为递送含碳层的相同或相似的前体。 然而，该层可以用不同的前体沉积。 本发明还提供了产生处理等离子体的处理方案和使用处理等离子体的系统。 含碳材料可以用于各种层，例如阻挡层，蚀刻停止层，ARC，钝化层和电介质层。

公开(公告)号：US20120295394A1

公开(公告)日：2012-11-22

申请号：US13473538

申请日：2012-05-16

申请人： Young Kyu Cho ,  Judy Huang

发明人： Young Kyu Cho ,  Judy Huang

IPC分类号： H01L31/18

CPC分类号： H01L31/022425 ,  Y02E10/547

摘要： A method for forming holes in the backside dielectric layer of solar cells for fabrication of rear point contact. The backside dielectric layer is coated with a layer of carbon. A shadow mask is placed over the carbon layer and reactive ion etch (RIE) is used to transfer the holes in the shadow mask to the carbon layer, to thereby form a carbon mask. The shadow mask is then removed and RIE is used to transfer the holes from the carbon mask to the dielectric layer. The carbon mask is then removed by, e.g., ashing.

摘要翻译： 一种在太阳能电池背面介电层中形成孔的方法，用于制造后点接触。 背面介电层涂有一层碳。 将荫罩放置在碳层上，使用反应离子蚀刻（RIE）将荫罩中的孔转移到碳层，从而形成碳掩模。 然后去除荫罩，并使用RIE将孔从碳掩模转移到电介质层。 然后通过例如灰化除去碳掩模。

公开(公告)号：US07144606B2

公开(公告)日：2006-12-05

申请号：US10995002

申请日：2004-11-22

申请人： Judy Huang

发明人： Judy Huang

IPC分类号： C23C16/32 ,  C23C16/40 ,  C23C16/42 ,  C23C16/56 ,  B05D3/06 ,  C23C16/505

CPC分类号： H01L21/02126 ,  C23C16/325 ,  C23C16/56 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02323 ,  H01L21/0234 ,  H01L21/3105 ,  H01L21/314 ,  H01L21/3146 ,  H01L21/31633

摘要： The present invention generally provides improved adhesion and oxidation resistance of carbon-containing layers without the need for an additional deposited layer. In one aspect, the invention treats an exposed surface of carbon-containing material, such as silicon carbide, with an inert gas plasma, such as a helium (He), argon (Ar), or other inert gas plasma, or an oxygen-containing plasma such as a nitrous oxide (N2O) plasma. Other carbon-containing materials can include organic polymeric materials, amorphous carbon, amorphous fluorocarbon, carbon containing oxides, and other carbon-containing materials. The plasma treatment is preferably performed in situ following the deposition of the layer to be treated. Preferably, the processing chamber in which in situ deposition and plasma treatment occurs is configured to deliver the same or similar precursors for the carbon-containing layer(s). However, the layer(s) can be deposited with different precursors. The invention also provides processing regimes that generate the treatment plasma and systems which use the treatment plasma. The carbon-containing material can be used in a variety of layers, such as barrier layers, etch stops, ARCs, passivation layers, and dielectric layers.

摘要翻译： 本发明通常提供了改进的含碳层的粘附性和抗氧化性，而不需要额外的沉积层。 一方面，本发明使用诸如氦（He），氩（Ar）或其它惰性气体等离子体或惰性气体等离子体的惰性气体等离子体处理含碳材料如碳化硅的暴露表面， 含有一氧化二氮（N 2 O 2 O）等离子体的等离子体。 其它含碳材料可以包括有机聚合材料，无定形碳，无定形碳氟化合物，含碳氧化物和其它含碳材料。 等离子体处理优选在沉积待处理层之后原位进行。 优选地，其中发生原位沉积和等离子体处理的处理室被配置为递送含碳层的相同或相似的前体。 然而，该层可以用不同的前体沉积。 本发明还提供了产生处理等离子体的处理方案和使用处理等离子体的系统。 含碳材料可以用于各种层，例如阻挡层，蚀刻停止层，ARC，钝化层和电介质层。

公开(公告)号：US06734102B2

公开(公告)日：2004-05-11

申请号：US10252195

申请日：2002-09-23

申请人： Sudha Rathi ,  Ping Xu ,  Judy Huang

发明人： Sudha Rathi ,  Ping Xu ,  Judy Huang

IPC分类号： H01L23205

CPC分类号： H01L21/32136 ,  B08B7/0035 ,  C23C16/0245 ,  C23G5/00 ,  H01L21/02063 ,  H01L21/02068 ,  H01L21/02074 ,  H01L21/76807 ,  H01L21/76883 ,  Y10S438/907

摘要： The present invention provides an in situ plasma reducing process to reduce oxides or other contaminants, using a compound of nitrogen and hydrogen, typically ammonia, at relatively low temperatures prior to depositing a subsequent layer thereon. The adhesion characteristics of the layers are improved and oxygen presence is reduced compared to the typical physical sputter cleaning process of an oxide layer. This process may be particularly useful for the complex requirements of a dual damascene structure, especially with copper applications.