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公开(公告)号：US11329228B2
公开(公告)日：2022-05-10
申请号：US16471446
申请日：2017-12-19
Applicant: CORNING INCORPORATED
Inventor： Robert George Manley , Karan Mehrotra , Barry James Paddock , Rajesh Vaddi , Nikolay Zhelev Zhelev , Bin Zhu
Abstract: A method of fabricating microstructures of polar elastomers includes coating a substrate with a dielectric material including a polar elastomer, coating the dielectric material with a photoresist, exposing the photoresist to ultraviolet (UV) light through a photomask to define a pattern on the photoresist, developing the photoresist to form the pattern on the photoresist, etching the dielectric material to transfer the pattern from the photoresist to the dielectric material, and removing the photoresist from the patterned dielectric material.
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公开(公告)号：US20220212981A1
公开(公告)日：2022-07-07
申请号：US17609110
申请日：2020-05-13
Applicant: Corning Incorporated
Inventor： Ming-Huang Huang , Hoon Kim , Robert George Manley , Rajesh Vaddi , Nikolay Zhelev Zhelev , Bin Zhu
Abstract: A method of depositing a copper film on a major surface of a glass sheet includes determining a desired range of a property of the copper film, correlating a thermal history of the glass sheet to the desired range of the property of the copper film, and depositing the copper film on the major surface of the glass sheet, wherein the property of the copper film deposited on the glass sheet is within the desired range. Correlating the thermal history of the glass sheet to the desired range of the property of the copper film can include heat treating glass sheet prior to depositing the copper film on the glass sheet.
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公开(公告)号：US20210047243A1
公开(公告)日：2021-02-18
申请号：US17080906
申请日：2020-10-27
Applicant: CORNING INCORPORATED
Inventor： Michael Edward Badding , Francis Martin Behan , Seo-Yeong Cho , Benedict Yorke Johnson , Thomas Dale Ketcham , Robert George Manley , Seongho Seok , Nikolay Zhelev Zhelev , Cheng-Gang Zhuang
Abstract: Ceramic assembly can comprise a ceramic article comprising a thickness defined between a first major surface and a second major surface. The thickness can be about 100 micrometers or less. The ceramic assembly can comprise a polymer coating deposited over at least an outer peripheral portion of the first major surface of the ceramic article. The polymer coating can comprise a thickness of about 30 micrometers or less. An edge strength of the ceramic assembly can be greater than an edge strength of the ceramic article by about 50 MegaPascals or more. Methods of forming a ceramic assembly can comprise depositing a polymer coating on an outer peripheral portion of a first major surface of a ceramic article. Methods can further comprise curing the polymer coating.
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公开(公告)号：US20210039986A1
公开(公告)日：2021-02-11
申请号：US16978039
申请日：2019-03-07
Applicant: Corning Incorporated
Abstract: Methods of processing or modifying a glass substrate such as a glass sheet are disclosed. A method includes contacting at least one of opposing major surfaces of the glass sheet with a fluid applicator apparatus and a liquid etchant composition including acetic acid, ammonium fluoride, and water, the contacting conducted at a predetermined transfer rate of the liquid etchant to the at least one of the opposing major surfaces. The predetermined liquid transfer rate is controlled to adjustably texture the at least one of the opposing major surfaces and provide a textured major surface, wherein when the textured major surface and a planar surface are placed in contact, there is an adhesion force between the textured major surface and the planar surface, and wherein the adhesion force is within a target adhesion force range.
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5.发明授权公开(公告)号：US12232338B2
公开(公告)日：2025-02-18
申请号：US17608291
申请日：2020-05-07
Inventor： Mingqian He , Jin Jang , Xiuling Li , Robert George Manley , Karan Mehrotra , Nikolay Zhelev Zhelev
Abstract: A thin-film transistor (TFT), includes: a substrate (202); an organic semiconductor (OSC) layer (210) positioned on the substrate; a dielectric layer (214) positioned on the OSC layer; and a polymeric interlayer (212) disposed in-between the OSC layer and the dielectric layer, such that the dielectric layer is configured to exhibit a double layer capacitance effect. A method of forming a thin-film transistor, includes: providing a substrate; providing a bottom gate layer atop the substrate; disposing consecutively from the substrate, an organic semiconductor (OSC) layer, a dielectric layer, and a top gate layer; and patterning the OSC layer, the dielectric layer, and the top gate layer using a single mask.
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Patent Agency Ranking
公开(公告)号：US11795116B2
公开(公告)日：2023-10-24
申请号：US17080906
申请日：2020-10-27
Applicant: CORNING INCORPORATED
Inventor： Michael Edward Badding , Francis Martin Behan , Seo-Yeong Cho , Benedict Yorke Johnson , Thomas Dale Ketcham , Robert George Manley , Seongho Seok , Nikolay Zhelev Zhelev , Cheng-Gang Zhuang
CPC classification number: C04B41/009 , B05D3/007 , C04B41/488 , C04B41/4823 , C04B41/4846 , C04B41/83 , C04B41/89
Abstract: Ceramic assembly can comprise a ceramic article comprising a thickness defined between a first major surface and a second major surface. The thickness can be about 100 micrometers or less. The ceramic assembly can comprise a polymer coating deposited over at least an outer peripheral portion of the first major surface of the ceramic article. The polymer coating can comprise a thickness of about 30 micrometers or less. An edge strength of the ceramic assembly can be greater than an edge strength of the ceramic article by about 50 MegaPascals or more. Methods of forming a ceramic assembly can comprise depositing a polymer coating on an outer peripheral portion of a first major surface of a ceramic article. Methods can further comprise curing the polymer coating.
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7.发明公开公开(公告)号：US20230163144A1
公开(公告)日：2023-05-25
申请号：US17990797
申请日：2022-11-21
Applicant: CORNING INCORPORATED
Inventor： Robert George Manley , Nikolay Zhelev Zhelev , Bin Zhu
IPC: H01L27/12 , H01L29/786 , H01L29/66
CPC classification number: H01L27/1274 , H01L27/1218 , H01L27/1222 , H01L27/124 , H01L29/78621 , H01L29/78675 , H01L29/66757
Abstract: A method for making a thin film transistor device includes forming a semiconductor film on a flexible substrate comprising a thin ribbon of refractory material that does not degrade when heated to temperatures greater than about 750° C. The semiconductor film is crystallized by heating the semiconductor film and the flexible substrate to at least about 750° C. A dielectric material is deposited on the crystallized semiconductor film. Gate, source, and drain electrodes are formed on the dielectric material.
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8.发明申请公开(公告)号：US20220209149A1
公开(公告)日：2022-06-30
申请号：US17608291
申请日：2020-05-07
Inventor： Mingqian He , Jin Jang , Xiuling Li , Robert George Manley , Karan Mehrotra , Nikolay Zhelev Zhelev
Abstract: A thin-film transistor (TFT), includes: a substrate (202); an organic semiconductor (OSC) layer (210) positioned on the substrate; a dielectric layer (214) positioned on the OSC layer; and a polymeric interlayer (212) disposed in-between the OSC layer and the dielectric layer, such that the dielectric layer is configured to exhibit a double layer capacitance effect. A method of forming a thin-film transistor, includes: providing a substrate; providing a bottom gate layer atop the substrate; disposing consecutively from the substrate, an organic semiconductor (OSC) layer, a dielectric layer, and a top gate layer; and patterning the OSC layer, the dielectric layer, and the top gate layer using a single mask.
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公开(公告)号：US20210135114A1
公开(公告)日：2021-05-06
申请号：US16471446
申请日：2017-12-19
Applicant: CORNING INCORPORATED
Inventor： Robert George Manley , Karan Mehrotra , Barry James Paddock , Rajesh Vaddi , Nikolay Zhelev Zhelev , Bin Zhu
Abstract: A method of fabricating microstructures of polar elastomers includes coating a substrate with a dielectric material including a polar elastomer, coating the dielectric material with a photoresist, exposing the photoresist to ultraviolet (UV) light through a photomask to define a pattern on the photoresist, developing the photoresist to form the pattern on the photoresist, etching the dielectric material to transfer the pattern from the photoresist to the dielectric material, and removing the photoresist from the patterned dielectric material
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公开(公告)号：US20210132425A1
公开(公告)日：2021-05-06
申请号：US16491900
申请日：2017-10-31
Applicant: CORNING INCORPORATED
Inventor： Idrani Bhattacharyya , Jr-Nan Hu , Tomohiro Ishikawa , Robert George Manley , Jonathan Michael Mis , Vitor Marino Schneider , Dean Michael Thelen , Sujanto Widjaja , Nikolay Zhelev Zhelev
IPC: G02F1/1333 , G02F1/1335 , G02F1/1368
Abstract: Disclosed devices (100) include a liquid crystal layer (140), a cover glass (105), a polarizer (115), and at least one anti-static coating disposed on at least one major surface (105A, 105C) of the cover glass, at least one major surface (115A, 115C) of the polarizer, or both. Methods for reducing mura (light leakage) in a touch-display device by means of this anti-static coating are also disclosed.
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