公开(公告)号：US20150221520A1

公开(公告)日：2015-08-06

申请号：US14686988

申请日：2015-04-15

Applicant: Cabot Microelectronics Corporation

Inventor： Pankaj SINGH ,  Lamon JONES

IPC: H01L21/306 ,  C09G1/02

CPC classification number: H01L21/30625 ,  C09G1/02 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/3212

Abstract: The present invention provides compositions and methods for polishing a molybdenum metal-containing surface. A polishing composition (slurry) described herein comprises an abrasive concentration of an inorganic particulate abrasive material (e.g., alumina or silica) suspended in an acidic aqueous medium containing a water soluble surface active material and an oxidizing agent. The surface active material is selected based on the zeta potential of the particulate abrasive, such that when the abrasive has a positive zeta potential, the surface active material comprises a cationic material, and when the particulate abrasive has a negative zeta potential, the surface active material comprises an anionic material, a non-ionic material, or a combination thereof.

Abstract translation: 本发明提供了用于研磨含有金属钼的表面的组合物和方法。 本文所述的抛光组合物（浆料）包含悬浮在含有水溶性表面活性物质和氧化剂的酸性含水介质中的无机颗粒磨料（例如氧化铝或二氧化硅）的磨料浓度。 基于颗粒磨料的ζ电位选择表面活性材料，使得当研磨剂具有正ζ电位时，表面活性材料包含阳离子材料，并且当颗粒磨料具有负ζ电位时，表面活性物质 材料包括阴离子材料，非离子材料或其组合。

公开(公告)号：US20150028254A1

公开(公告)日：2015-01-29

申请号：US14509081

申请日：2014-10-08

Applicant: Cabot Microelectronics Corporation

Inventor： Brian REISS ,  John CLARK ,  Lamon JONES ,  Jeffrey GILLILAND ,  Michael WHITE

IPC: C09G1/02

CPC classification number: C09G1/02 ,  C09K3/1463 ,  H01L21/02024

Abstract: The invention provides a polishing composition comprising (a) silica, (b) one or more compounds that increases the removal rate of silicon, (c) one or more tetraalkylammonium salts, and (d) water, wherein the polishing composition has a pH of about 7 to about 11. The invention further provides a method of polishing a substrate with the polishing composition.

Abstract translation: 本发明提供一种抛光组合物，其包含（a）二氧化硅，（b）一种或多种增加硅去除速率的化合物，（c）一种或多种四烷基铵盐和（d）水，其中抛光组合物的pH为 约7至约11.本发明还提供了用抛光组合物抛光基材的方法。

公开(公告)号：US20140191155A1

公开(公告)日：2014-07-10

申请号：US14209110

申请日：2014-03-13

Applicant: Cabot Microelectronics Corporation

Inventor： Brian REISS ,  Timothy JOHNS ,  Michael WHITE ,  Lamon JONES ,  John CLARK

IPC: C09G1/02

CPC classification number: C09G1/02 ,  C09K3/1463 ,  H01L21/02024 ,  H01L21/3212

Abstract: The invention provides a polishing composition comprising silica, an aminophosphonic acid, a polysaccharide, a tetraalkylammonium salt, a bicarbonate salt, an azole ring, and water, wherein the polishing composition has a pH of about 7 to about 11. The invention further provides a method of polishing a substrate with the polishing composition.

Abstract translation: 本发明提供一种抛光组合物，其包含二氧化硅，氨基膦酸，多糖，四烷基铵盐，碳酸氢盐，唑环和水，其中抛光组合物的pH为约7至约11.本发明还提供了一种 用抛光组合物研磨衬底的方法。

公开(公告)号：US20130327977A1

公开(公告)日：2013-12-12

申请号：US13913721

申请日：2013-06-10

Applicant: Cabot Microelectronics Corporation

Inventor： Pankaj SINGH ,  Lamon JONES

IPC: H01L21/306 ,  C09G1/02

CPC classification number: H01L21/30625 ,  C09G1/02 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/3212

Abstract: The present invention provides compositions and methods for polishing a molybdenum metal-containing surface. A polishing composition (slurry) described herein comprises an abrasive concentration of an inorganic particulate abrasive material (e.g., alumina or silica) suspended in an acidic aqueous medium containing a water soluble surface active material and an oxidizing agent. The surface active material is selected based on the zeta potential of the particulate abrasive, such that when the abrasive has a positive zeta potential, the surface active material comprises a cationic material, and when the particulate abrasive has a negative zeta potential, the surface active material comprises an anionic material, a nonionic material, or a combination thereof.

Abstract translation: 本发明提供了用于研磨含有金属钼的表面的组合物和方法。 本文所述的抛光组合物（浆料）包含悬浮在含有水溶性表面活性物质和氧化剂的酸性含水介质中的无机颗粒磨料（例如氧化铝或二氧化硅）的磨料浓度。 基于颗粒磨料的ζ电位选择表面活性材料，使得当研磨剂具有正ζ电位时，表面活性材料包含阳离子材料，并且当颗粒磨料具有负ζ电位时，表面活性物质 材料包括阴离子材料，非离子材料或其组合。