公开(公告)号：US09617450B2

公开(公告)日：2017-04-11

申请号：US14657594

申请日：2015-03-13

申请人： Cabot Microelectronics Corporation

发明人： Steven Grumbine ,  Shoutian Li ,  William Ward ,  Pankaj Singh ,  Jeffrey Dysard

IPC分类号： C09G1/02 ,  B24B37/04 ,  C09K3/14 ,  H01L21/3105

CPC分类号： C09G1/02 ,  B24B37/044 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/31053

摘要： The inventive method comprises chemically-mechanically polishing a substrate with an inventive polishing composition comprising a liquid carrier and abrasive particles that have been treated with a compound.

公开(公告)号：US11034862B2

公开(公告)日：2021-06-15

申请号：US16664235

申请日：2019-10-25

申请人： Cabot Microelectronics Corporation

发明人： Steven Grumbine ,  Shoutian Li ,  William Ward ,  Pankaj Singh ,  Jeffrey Dysard

IPC分类号： C09G1/02 ,  B24B37/04 ,  C09K3/14 ,  H01L21/3105

摘要： The inventive method comprises chemically-mechanically polishing a substrate with an inventive polishing composition comprising a liquid carrier and abrasive particles that have been treated with a compound.

公开(公告)号：US10508219B2

公开(公告)日：2019-12-17

申请号：US15346835

申请日：2016-11-09

申请人： Cabot Microelectronics Corporation

发明人： Steven Grumbine ,  Shoutian Li ,  William Ward ,  Pankaj Singh ,  Jeffrey Dysard

IPC分类号： C09G1/02 ,  C09K3/14 ,  B24B37/04 ,  H01L21/3105

摘要： The inventive method comprises chemically-mechanically polishing a substrate with an inventive polishing composition comprising a liquid carrier and abrasive particles that have been treated with a compound.

公开(公告)号：US20200056069A1

公开(公告)日：2020-02-20

申请号：US16664235

申请日：2019-10-25

申请人： Cabot Microelectronics Corporation

发明人： Steven Grumbine ,  Shoutian Li ,  William Ward ,  Pankaj Singh ,  Jeffrey Dysard

IPC分类号： C09G1/02 ,  C09K3/14 ,  H01L21/3105 ,  B24B37/04

摘要： The inventive method comprises chemically-mechanically polishing a substrate with an inventive polishing composition comprising a liquid carrier and abrasive particles that have been treated with a compound.