公开(公告)号：US10508219B2

公开(公告)日：2019-12-17

申请号：US15346835

申请日：2016-11-09

Applicant: Cabot Microelectronics Corporation

Inventor： Steven Grumbine ,  Shoutian Li ,  William Ward ,  Pankaj Singh ,  Jeffrey Dysard

IPC: C09G1/02 ,  C09K3/14 ,  B24B37/04 ,  H01L21/3105

Abstract: The inventive method comprises chemically-mechanically polishing a substrate with an inventive polishing composition comprising a liquid carrier and abrasive particles that have been treated with a compound.

公开(公告)号：US09238754B2

公开(公告)日：2016-01-19

申请号：US14203621

申请日：2014-03-11

Applicant: Cabot Microelectronics Corporation

Inventor： Steven Grumbine ,  Jeffrey Dysard ,  Lin Fu ,  William Ward ,  Glenn Whitener

IPC: C09G1/02 ,  H01L21/306 ,  H01L21/321

CPC classification number: B24B37/044 ,  C09G1/02 ,  C09K3/1436 ,  C09K3/1463 ,  C23F1/40 ,  H01L21/3212

Abstract: A chemical mechanical polishing composition for polishing a substrate having a tungsten layer includes a water based liquid carrier, a colloidal silica abrasive dispersed in the liquid carrier and having a permanent positive charge of at least 6 mV, an amine compound in solution in the liquid carrier, and an iron containing accelerator. A method for chemical mechanical polishing a substrate including a tungsten layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.

Abstract translation: 一种用于抛光具有钨层的基材的化学机械抛光组合物包括水基液体载体，分散在液体载体中的胶体二氧化硅磨料并具有至少6mV的永久正电荷，液体载体中的溶液中的胺化合物 ，和含铁促进剂。 用于化学机械抛光包括钨层的基材的方法包括使基底与上述抛光组合物接触，使抛光组合物相对于基底移动，并研磨基底以从基底去除一部分钨，从而抛光 基质。

公开(公告)号：US20200056069A1

公开(公告)日：2020-02-20

申请号：US16664235

申请日：2019-10-25

Applicant: Cabot Microelectronics Corporation

Inventor： Steven Grumbine ,  Shoutian Li ,  William Ward ,  Pankaj Singh ,  Jeffrey Dysard

IPC: C09G1/02 ,  C09K3/14 ,  H01L21/3105 ,  B24B37/04

Abstract: The inventive method comprises chemically-mechanically polishing a substrate with an inventive polishing composition comprising a liquid carrier and abrasive particles that have been treated with a compound.

公开(公告)号：US10358579B2

公开(公告)日：2019-07-23

申请号：US14094921

申请日：2013-12-03

Applicant: Cabot Microelectronics Corporation

Inventor： Ke Zhang ,  Michael White ,  Tsung-Ho Lee ,  Steven Grumbine ,  Hon-Wu Lau

IPC: G09G1/18 ,  C23F3/06 ,  C09G1/02 ,  H01L21/304 ,  H01L21/306 ,  H01L21/321 ,  C09G1/18

Abstract: Chemical mechanical polishing (CMP) compositions and methods for planarizing a nickel phosphorus (NiP) substrate are described. A NiP CMP method comprises abrading a surface of the substrate with a CMP composition. The CMP composition comprises a colloidal silica abrasive suspended in an aqueous carrier having a pH of less than 2, and containing a primary oxidizing agent comprising hydrogen peroxide, a secondary oxidizing agent comprising a metal ion capable of reversible oxidation and reduction in the presence of NiP and hydrogen peroxide, a chelating agent, and glycine. The chelating agent comprises two or three carboxylic acid substituents capable of chelating to the metal ion of the secondary oxidizing agent.

公开(公告)号：US20150376460A1

公开(公告)日：2015-12-31

申请号：US14750050

申请日：2015-06-25

Applicant: Cabot Microelectronics Corporation

Inventor： Steven Grumbine ,  Jeffrey Dysard ,  Ernest Shen ,  Mary Cavanaugh ,  Daniel Clingerman

IPC: C09G1/02

CPC classification number: C09G1/02 ,  B24B1/00 ,  B24B37/044 ,  C09G1/00 ,  C09G1/04 ,  C09G1/06 ,  C09K3/1436 ,  C09K3/1454 ,  C09K3/1463 ,  H01L21/30625 ,  H01L21/31053 ,  H01L21/3212

Abstract: Methods for fabricating a chemical-mechanical polishing composition include growing colloidal silica abrasive particles in a liquid including an aminosilane compound such that the aminosilane compound becomes incorporated in the abrasive particles. A dispersion including such colloidal silica abrasive particles may be further processed to obtain a chemical-mechanical polishing composition including colloidal silica particles having the aminosilane compound incorporated therein.

Abstract translation: 用于制造化学机械抛光组合物的方法包括在包括氨基硅烷化合物的液体中生长胶体二氧化硅磨料颗粒，使得氨基硅烷化合物掺入磨料颗粒中。 可以进一步处理包括这种胶体二氧化硅磨料颗粒的分散体，以获得包含其中并入氨基硅烷化合物的胶体二氧化硅颗粒的化学机械抛光组合物。

公开(公告)号：US20150376458A1

公开(公告)日：2015-12-31

申请号：US14749923

申请日：2015-06-25

Applicant: Cabot Microelectronics Corporation

Inventor： Steven Grumbine ,  Jeffrey Dysard ,  Ernest Shen ,  Mary Cavanaugh

IPC: C09G1/02

CPC classification number: C09G1/02 ,  B24B1/00 ,  B24B37/044 ,  C09G1/00 ,  C09G1/04 ,  C09G1/06 ,  C09K3/1436 ,  C09K3/1454 ,  C09K3/1463 ,  H01L21/30625 ,  H01L21/31053 ,  H01L21/3212

Abstract: A chemical-mechanical polishing composition includes colloidal silica abrasive particles dispersed in a liquid carrier having a pH in a range from about 1.5 to about 7. The colloidal silica abrasive particles include an aminosilane compound or a phosphonium silane compound incorporated therein. The composition may be used to polish a substrate including a silicon oxygen material such as TEOS.

Abstract translation: 化学 - 机械抛光组合物包括分散在pH在约1.5至约7范围内的液体载体中的胶体二氧化硅磨料颗粒。胶体二氧化硅磨料颗粒包括掺入其中的氨基硅烷化合物或鏻硅烷化合物。 组合物可用于抛光包括硅氧材料如TEOS的基材。

公开(公告)号：US09309442B2

公开(公告)日：2016-04-12

申请号：US14222086

申请日：2014-03-21

Applicant: Cabot Microelectronics Corporation

Inventor： Lin Fu ,  Jeffrey Dysard ,  Steven Grumbine

IPC: C09G1/02 ,  C23F3/03 ,  B24B37/04 ,  C23F3/06

CPC classification number: C09G1/02 ,  B24B37/044 ,  C23F3/06

Abstract: A chemical mechanical polishing composition for polishing a substrate having a tungsten layer includes a water based liquid carrier and colloidal silica abrasive particles dispersed in the liquid carrier. The colloidal silica abrasive particles have a permanent positive charge of at least 6 mV. About 30 percent or more of the colloidal silica abrasive particles include three or more aggregated primary particles.

Abstract translation: 用于研磨具有钨层的基材的化学机械抛光组合物包括分散在液体载体中的水性液体载体和胶态二氧化硅磨料颗粒。 胶体二氧化硅磨料颗粒具有至少6mV的永久正电荷。 大约30％以上的胶态二氧化硅磨料颗粒包括三个或更多个聚集的初级颗粒。

公开(公告)号：US09303190B2

公开(公告)日：2016-04-05

申请号：US14222736

申请日：2014-03-24

Applicant: Cabot Microelectronics Corporation

Inventor： William Ward ,  Glenn Whitener ,  Steven Grumbine ,  Jeffrey Dysard

IPC: C09G1/00 ,  C09G1/02 ,  H01L21/321 ,  C09G1/04 ,  H01L21/306

CPC classification number: C09G1/02 ,  C09G1/04 ,  H01L21/30625 ,  H01L21/3212

Abstract: A chemical mechanical polishing composition for polishing a substrate having a tungsten layer includes a water based liquid carrier, first and second colloidal silica abrasives dispersed in the liquid carrier, and an iron containing accelerator. The first colloidal silica abrasive and the second colloidal silica abrasive each have a permanent positive charge of at least 10 mV. An average particle size of the second silica abrasive is at least 20 nanometers greater than an average particle size of the first silica abrasive. A method for chemical mechanical polishing a substrate including a tungsten layer is further disclosed. The method may include contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.

Abstract translation: 用于研磨具有钨层的基材的化学机械抛光组合物包括水基液体载体，分散在液体载体中的第一和第二胶体二氧化硅研磨剂和含铁促进剂。 第一胶体二氧化硅研磨剂和第二胶态二氧化硅磨料各自具有至少10mV的永久正电荷。 第二硅石研磨剂的平均粒度比第一二氧化硅研磨剂的平均粒径大至少20纳米。 还公开了一种用于化学机械研磨包括钨层的衬底的方法。 该方法可以包括使基底与上述抛光组合物接触，使抛光组合物相对于基底移动，并研磨基底以从基底去除一部分钨，从而抛光基底。

公开(公告)号：US09303189B2

公开(公告)日：2016-04-05

申请号：US14203693

申请日：2014-03-11

Applicant: Cabot Microelectronics Corporation

Inventor： Steven Grumbine ,  Jeffrey Dysard ,  Lin Fu ,  William Ward ,  Glenn Whitener

IPC: C09K13/00 ,  C09G1/02 ,  H01L21/321

CPC classification number: C09G1/02 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/3212

Abstract: A chemical mechanical polishing composition for polishing a substrate having a tungsten layer includes a water based liquid carrier, a colloidal silica abrasive dispersed in the liquid carrier and having a permanent positive charge of at least 6 mV, an amine containing polymer in solution in the liquid carrier, and an iron containing accelerator. A method for chemical mechanical polishing a substrate including a tungsten layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.

Abstract translation: 用于研磨具有钨层的基材的化学机械抛光组合物包括水基液体载体，分散在液体载体中的具有永久正电荷至少6mV的胶体二氧化硅磨料，液体溶液中的含胺聚合物 载体和含铁促进剂。 用于化学机械抛光包括钨层的基材的方法包括使基底与上述抛光组合物接触，使抛光组合物相对于基底移动，并研磨基底以从基底去除一部分钨，从而抛光 基质。

公开(公告)号：US20150376463A1

公开(公告)日：2015-12-31

申请号：US14750271

申请日：2015-06-25

Applicant: Cabot Microelectronics Corporation

Inventor： Lin Fu ,  Steven Grumbine ,  Jeffrey Dysard ,  Wei Weng ,  Lei Liu ,  Alexei Leonov

IPC: C09G1/02 ,  H01L21/3105 ,  H01L21/306 ,  H01L21/321

CPC classification number: C09G1/02 ,  C09K3/14 ,  C09K3/1436 ,  C09K3/1463 ,  C09K13/00 ,  H01L21/30625 ,  H01L21/31053 ,  H01L21/31055 ,  H01L21/3212

Abstract: A chemical-mechanical polishing composition includes colloidal silica abrasive particles having a chemical compound incorporated therein. The chemical compound may include a nitrogen-containing compound such as an aminosilane or a phosphorus-containing compound. Methods for employing such compositions include applying the composition to a semiconductor substrate to remove at least a portion of at least one of a copper, a copper barrier, and a dielectric layer.

Abstract translation: 化学机械抛光组合物包括其中掺入化学化合物的胶体二氧化硅磨料颗粒。 化合物可以包括含氮化合物如氨基硅烷或含磷化合物。 使用这种组合物的方法包括将组合物施加到半导体衬底以去除铜，铜屏障和电介质层中的至少一种的至少一部分。