公开(公告)号：US10508219B2

公开(公告)日：2019-12-17

申请号：US15346835

申请日：2016-11-09

Applicant: Cabot Microelectronics Corporation

Inventor： Steven Grumbine ,  Shoutian Li ,  William Ward ,  Pankaj Singh ,  Jeffrey Dysard

IPC: C09G1/02 ,  C09K3/14 ,  B24B37/04 ,  H01L21/3105

Abstract: The inventive method comprises chemically-mechanically polishing a substrate with an inventive polishing composition comprising a liquid carrier and abrasive particles that have been treated with a compound.

公开(公告)号：US11034862B2

公开(公告)日：2021-06-15

申请号：US16664235

申请日：2019-10-25

Applicant: Cabot Microelectronics Corporation

Inventor： Steven Grumbine ,  Shoutian Li ,  William Ward ,  Pankaj Singh ,  Jeffrey Dysard

IPC: C09G1/02 ,  B24B37/04 ,  C09K3/14 ,  H01L21/3105

Abstract: The inventive method comprises chemically-mechanically polishing a substrate with an inventive polishing composition comprising a liquid carrier and abrasive particles that have been treated with a compound.

公开(公告)号：US09617450B2

公开(公告)日：2017-04-11

申请号：US14657594

申请日：2015-03-13

Applicant: Cabot Microelectronics Corporation

Inventor： Steven Grumbine ,  Shoutian Li ,  William Ward ,  Pankaj Singh ,  Jeffrey Dysard

IPC: C09G1/02 ,  B24B37/04 ,  C09K3/14 ,  H01L21/3105

CPC classification number: C09G1/02 ,  B24B37/044 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/31053

Abstract: The inventive method comprises chemically-mechanically polishing a substrate with an inventive polishing composition comprising a liquid carrier and abrasive particles that have been treated with a compound.

公开(公告)号：US20200056069A1

公开(公告)日：2020-02-20

申请号：US16664235

申请日：2019-10-25

Applicant: Cabot Microelectronics Corporation

Inventor： Steven Grumbine ,  Shoutian Li ,  William Ward ,  Pankaj Singh ,  Jeffrey Dysard

IPC: C09G1/02 ,  C09K3/14 ,  H01L21/3105 ,  B24B37/04

Abstract: The inventive method comprises chemically-mechanically polishing a substrate with an inventive polishing composition comprising a liquid carrier and abrasive particles that have been treated with a compound.

公开(公告)号：US20190085209A1

公开(公告)日：2019-03-21

申请号：US16131180

申请日：2018-09-14

Applicant: Cabot Microelectronics Corporation

Inventor： Kevin P. DOCKERY ,  Tyler Carter ,  Matthew E. Carnes ,  Jessica VanKuiken ,  Pankaj Singh

IPC: C09G1/02 ,  C23F1/30 ,  B24B37/04

Abstract: A chemical mechanical polishing composition for polishing a substrate having a tungsten layer includes a water based liquid carrier, abrasive particles dispersed in the liquid carrier, an iron containing accelerator, and a cationic polymer having an amino acid monomer. A method for chemical mechanical polishing a substrate including a tungsten layer includes contacting the substrate with the above-described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.

公开(公告)号：US20150184029A1

公开(公告)日：2015-07-02

申请号：US14657594

申请日：2015-03-13

Applicant: Cabot Microelectronics Corporation

Inventor： Steven GRUMBINE ,  Shoutian Ll ,  William Ward ,  Pankaj Singh ,  Jeffrey Dysard

IPC: C09G1/02

CPC classification number: C09G1/02 ,  B24B37/044 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/31053

Abstract: The inventive method comprises chemically-mechanically polishing a substrate with an inventive polishing composition comprising a liquid carrier and abrasive particles that have been treated with a compound.