公开(公告)号：US08921953B2

公开(公告)日：2014-12-30

申请号：US13946479

申请日：2013-07-19

Applicant: Cavendish Kinetics Inc.

Inventor： Mickael Renault ,  Joseph Damian Gordon Lacey ,  Vikram Joshi ,  Thomas L. Maguire

IPC: H01L29/84 ,  B81C1/00 ,  B81B3/00

CPC classification number: B81B3/0072 ,  B81B2203/0118 ,  B81B2203/0307 ,  B81B2207/096 ,  B81C1/00039 ,  B81C1/00333 ,  B81C1/00476 ,  B81C2201/0132 ,  B81C2201/014 ,  B81C2203/0145 ,  B81C2203/0714

Abstract: The present invention generally relates to methods for producing MEMS or NEMS devices and the devices themselves. A thin layer of a material having a lower recombination coefficient as compared to the cantilever structure may be deposited over the cantilever structure, the RF electrode and the pull-off electrode. The thin layer permits the etching gas introduced to the cavity to decrease the overall etchant recombination rate within the cavity and thus, increase the etching rate of the sacrificial material within the cavity. The etchant itself may be introduced through an opening in the encapsulating layer that is linearly aligned with the anchor portion of the cantilever structure so that the topmost layer of sacrificial material is etched first. Thereafter, sealing material may seal the cavity and extend into the cavity all the way to the anchor portion to provide additional strength to the anchor portion.

Abstract translation: 本发明一般涉及用于生产MEMS或NEMS装置和装置本身的方法。 与悬臂结构相比，具有较低复合系数的材料的薄层可以沉积在悬臂结构，RF电极和拉出电极上。 薄层允许引入空腔的蚀刻气体降低空腔内的整体蚀刻剂复合速率，从而提高空腔内的牺牲材料的蚀刻速率。 蚀刻剂本身可以通过与悬臂结构的锚固部分线性对准的封装层中的开口引入，使得首先蚀刻最顶层的牺牲材料。 此后，密封材料可以密封空腔并且一直延伸到空腔中，以锚定部分，以向锚固部分提供额外的强度。

公开(公告)号：US10029914B2

公开(公告)日：2018-07-24

申请号：US14916884

申请日：2015-04-23

Applicant: CAVENDISH KINETICS, INC.

Inventor： James Douglas Huffman ,  Cong Quoc Khieu ,  Robertus Petrus Van Kampen ,  Karl F. Smayling ,  Vikram Joshi

IPC: H01L29/93 ,  B81C99/00 ,  H01G5/16 ,  H01L23/522 ,  G01R27/26

Abstract: The present invention generally relates to a mechanism for testing a MEMS hysteresis. A power management circuit may be coupled to the electrodes that cause the movable plate that is disposed between the electrodes in a MEMS device to move. The power management circuit may utilize a charge pump, a comparator and a resistor ladder.

公开(公告)号：US09948212B2

公开(公告)日：2018-04-17

申请号：US14889118

申请日：2014-05-16

Applicant: CAVENDISH KINETICS, INC.

Inventor： Cong Quoc Khieu ,  James Douglas Huffman ,  Richard L. Knipe ,  Vikram Joshi ,  Robertus Petrus Van Kampen

IPC: H02N1/00 ,  B81B7/00 ,  H01G5/18 ,  H01H59/00 ,  B81B7/02 ,  H01G5/011

CPC classification number: H02N1/006 ,  B81B7/008 ,  B81B7/02 ,  B81B2201/0221 ,  H01G5/011 ,  H01G5/18 ,  H01H59/0009 ,  H03J2200/39

Abstract: The present invention generally relates to a method of operating a MEMS DVC while minimizing impact of the MEMS device on contact surfaces. By reducing the drive voltage upon the pull-in movement of the MEMS device, the acceleration of the MEMS device towards the contact surface is reduced and thus, the impact velocity is reduced and less damage of the MEMS DVC device occurs.

公开(公告)号：US09711290B2

公开(公告)日：2017-07-18

申请号：US15024931

申请日：2014-09-24

Applicant: CAVENDISH KINETICS, INC.

Inventor： Mickael Renault ,  Vikram Joshi ,  Robertus Petrus Van Kampen ,  Thomas L. Maguire ,  Richard L. Knipe

IPC: H01L29/84 ,  H01G5/16 ,  H01H59/00 ,  B81B3/00 ,  B81C1/00 ,  H01G5/011

CPC classification number: H01G5/16 ,  B81B3/0086 ,  B81B2201/0221 ,  B81B2203/04 ,  B81C1/00166 ,  B81C2201/0104 ,  B81C2201/0109 ,  H01G5/011 ,  H01H59/0009

Abstract: The present invention generally relates to a MEMS device and a method of manufacture thereof. The RF electrode, and hence, the dielectric layer thereover, has a curved upper surface that substantially matches the contact area of the bottom surface of the movable plate. As such, the movable plate is able to have good contact with the dielectric layer and thus, good capacitance is achieved.

公开(公告)号：US09336953B2

公开(公告)日：2016-05-10

申请号：US13916675

申请日：2013-06-13

Applicant: CAVENDISH KINETICS INC.

Inventor： Cong Quoc Khieu ,  Vikram Joshi ,  Richard L. Knipe

IPC: H01G5/16 ,  B81B7/02 ,  H01G5/18 ,  H01G5/38 ,  H01H59/00

CPC classification number: H01G5/16 ,  B81B7/02 ,  H01G5/18 ,  H01G5/38 ,  H01H59/0009

Abstract: The present invention generally relates to methods for increasing the lifetime of MEMS devices by reducing the number of movements of a switching element in the MEMS device. Rather than returning to a ground state between cycles, the switching element can remain in the same state if both cycles necessitate the same capacitance. For example, if in both a first and second cycle, the switching element of the MEMS device is in a state of high capacitance the switching element can remain in place between the first and second cycle rather than move to the ground state. Even if the polarity of the capacitance is different in successive cycles, the switching element can remain in place and the polarity can be switched. Because the switching element remains in place between cycles, the switching element, while having the same finite number of movements, should have a longer lifetime.

Abstract translation: 本发明一般涉及通过减少MEMS器件中的开关元件的移动次数来增加MEMS器件寿命的方法。 不是在循环之间返回到基态，如果两个循环都需要相同的电容，则开关元件可以保持在相同的状态。 例如，如果在第一和第二周期中，MEMS器件的开关元件处于高电容的状态，则开关元件可以在第一和第二周期之间保持就位而不是移动到基态。 即使电容的极性在连续的循环中不同，开关元件也可以保持在适当的位置，并且可以切换极性。 因为开关元件在周期之间保持原位，所以开关元件虽然具有相同的有限数量的运动，应该具有更长的寿命。