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    Method for forming an anti-etching shielding layer of resist patterns in semiconductor fabrication
    2.
    发明授权
    Method for forming an anti-etching shielding layer of resist patterns in semiconductor fabrication 有权
    在半导体制造中形成抗蚀剂图案的抗蚀刻屏蔽层的方法

    公开(公告)号：US07566525B2

    公开(公告)日：2009-07-28

    申请号：US11152559

    申请日：2005-06-14

    Applicant: Chin-Hsiang Lin ,  Ching-Yu Chang

    Inventor： Chin-Hsiang Lin ,  Ching-Yu Chang

    IPC: G03F1/00 ,  H01L21/00

    CPC classification number: G03F7/405

    Abstract: A method is disclosed for forming a photoresist pattern with enhanced etch resistance on a semiconductor substrate. A photoresist pattern is first formed on the substrate. A silicon-containing polymer layer is deposited over the photoresist pattern on the substrate. A thermal treatment is performed to form a cross-linked anti-etch shielding layer between the photoresist pattern and the silicon-containing layer. Then, the remaining silicon containing layer is removed. A plasma treatment is performed in order to increase an etch resistance of the cross-linked anti-etch shielding layer and the photoresist pattern.

    Abstract translation: 公开了用于在半导体衬底上形成具有增强的耐蚀刻性的光致抗蚀剂图案的方法。 首先在基板上形成光致抗蚀剂图案。 在基板上的光致抗蚀剂图案上沉积含硅聚合物层。 进行热处理以在光致抗蚀剂图案和含硅层之间形成交联的抗蚀刻屏蔽层。 然后，除去剩余的含硅层。 执行等离子体处理以增加交联的抗蚀刻屏蔽层和光刻胶图案的耐蚀刻性。

    Method for reducing wafer charging during drying
    3.
    发明申请
    Method for reducing wafer charging during drying 审中-公开
    干燥过程中减少晶圆充电的方法

    公开(公告)号：US20060115774A1

    公开(公告)日：2006-06-01

    申请号：US10999625

    申请日：2004-11-30

    Applicant: Yu-Hsi Wang ,  Shi-Che Wang ,  Hua-Tal Lin ,  Shang Ho Lin ,  Ching-Yu Chang ,  Chin-Hsiang Lin

    Inventor： Yu-Hsi Wang ,  Shi-Che Wang ,  Hua-Tal Lin ,  Shang Ho Lin ,  Ching-Yu Chang ,  Chin-Hsiang Lin

    IPC: G03F7/00

    CPC classification number: G03F7/405 ,  H01L21/02057

    Abstract: A novel method for eliminating or reducing the accumulation of electrostatic charges on semiconductor wafers during spin-rinse-drying of the wafers is disclosed. The method includes rinsing a wafer; applying an ionic solution to the wafer; and spin-drying the wafer. During the spin-drying step, the ionic solution neutralizes electrostatic charges on the wafer as the wafer is rotated. This reduces the formation of defects in devices fabricated on the wafer, as well as prevents or reduces electrostatic interference with processing equipment during photolithographic and other fabrication processes.

    Abstract translation: 公开了一种用于在晶片的旋转冲洗干燥期间消除或减少半导体晶片上的静电电荷累积的新颖方法。 该方法包括冲洗晶片; 将离子溶液施加到晶片上; 并旋转晶片。 在旋转干燥步骤期间，当晶片旋转时，离子溶液中和晶片上的静电电荷。 这减少了在晶片上制造的器件中的缺陷的形成，以及在光刻和其它制造工艺期间防止或减少与处理设备的静电干扰。

    Method and system for immersion lithography lens cleaning
    4.
    发明申请
    Method and system for immersion lithography lens cleaning 审中-公开
    浸没式光刻镜片清洗方法及系统

    公开(公告)号：US20050205108A1

    公开(公告)日：2005-09-22

    申请号：US10802087

    申请日：2004-03-16

    Applicant: Ching-Yu Chang ,  Chin-Hsiang Lin

    Inventor： Ching-Yu Chang ,  Chin-Hsiang Lin

    IPC: A61N5/00 ,  B08B3/12 ,  B08B6/00 ,  B08B7/00 ,  B08B7/02 ,  G03B27/42 ,  G03F7/20 ,  G21G5/00

    CPC classification number: G03F7/70341 ,  G03F7/70925

    Abstract: A method and system for cleaning lens used in an immersion lithography system is disclosed. After positioning a wafer in the immersion lithography system, a light exposing operation is performed on the wafer using an objective lens immersed in a first fluid containing surfactant, wherein the surfactant reduces a likelihood for having floating defects adhere to the wafer and the objective lens.

    Abstract translation: 公开了一种用于在浸没式光刻系统中使用的透镜的清洁方法和系统。 在将浸没光刻系统中的晶片定位之后，使用浸入第一流体表面活性剂中的物镜在晶片上进行曝光操作，其中表面活性剂减少浮动缺陷粘附到晶片和物镜的可能性。

    Immersion lithography apparatus and methods
    6.
    发明授权
    Immersion lithography apparatus and methods 有权
    浸渍光刻设备及方法

    公开(公告)号：US07986395B2

    公开(公告)日：2011-07-26

    申请号：US11427421

    申请日：2006-06-29

    Applicant: Ching-Yu Chang ,  Burn Jeng Lin ,  Chin-Hsiang Lin

    Inventor： Ching-Yu Chang ,  Burn Jeng Lin ,  Chin-Hsiang Lin

    IPC: G03B27/42

    CPC classification number: G03F7/70925 ,  G03F7/70341

    Abstract: A lithography apparatus includes an imaging lens module; a substrate table positioned underlying the imaging lens module and configured to hold a substrate; and a cleaning module adapted to clean the lithography apparatus. The cleaning module is selected from the group consisting of an ultrasonic unit, a scrubber, a fluid jet, an electrostatic cleaner, and combinations thereof.

    Abstract translation: 光刻设备包括成像透镜模块; 位于所述成像透镜模块下方且被配置为保持基板的基板台; 以及适于清洁光刻设备的清洁模块。 清洁模块选自超声波单元，洗涤器，流体射流，静电清洁器及其组合。

    Method of forming high etch resistant resist patterns
    8.
    发明申请
    Method of forming high etch resistant resist patterns 有权
    形成高耐腐蚀抗蚀剂图案的方法

    公开(公告)号：US20070048675A1

    公开(公告)日：2007-03-01

    申请号：US11209684

    申请日：2005-08-24

    Applicant: Ching-Yu Chang ,  Chin-Hsiang Lin

    Inventor： Ching-Yu Chang ,  Chin-Hsiang Lin

    IPC: G03F7/26

    CPC classification number: G03F7/40 ,  G03F7/405

    Abstract: A method for forming an etch-resistant photoresist pattern on a semiconductor substrate is provided. In one embodiment, a photoresist layer is formed on the substrate. The photoresist layer is exposed and developed to form a photoresist pattern. A polymer-containing layer is formed over the photoresist pattern. The photoresist pattern and the polymer-containing layer are thermally treated so that polymer is substantially diffused into the photoresist pattern thereby enhancing the etch resistance of the photoresist pattern. The polymer-containing layer is thereafter removed.

    Abstract translation: 提供了一种在半导体衬底上形成耐蚀刻光刻胶图案的方法。 在一个实施例中，在基板上形成光致抗蚀剂层。 光致抗蚀剂层被曝光和显影以形成光致抗蚀剂图案。 在光致抗蚀剂图案上形成含聚合物的层。 光致抗蚀剂图案和含聚合物的层被热处理，使得聚合物基本上扩散到光致抗蚀剂图案中，从而增强光致抗蚀剂图案的耐蚀刻性。 然后除去含聚合物的层。

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