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1.发明授权公开(公告)号：US07819980B2
公开(公告)日：2010-10-26
申请号：US11204691
申请日：2005-08-16
申请人： Chen-Yuan Hsia , Chang-Cheng Hung , Chi-Lun Lu , Shih-Ming Chang , Wen-Chuan Wang , Yen-Bin Huang , Ching-Yu Chang , Chin-Hsiang Lin
发明人： Chen-Yuan Hsia , Chang-Cheng Hung , Chi-Lun Lu , Shih-Ming Chang , Wen-Chuan Wang , Yen-Bin Huang , Ching-Yu Chang , Chin-Hsiang Lin
CPC分类号： B08B6/00 , B08B5/00 , H01L21/02057 , H01L21/67017 , H01L21/67051
摘要： A system for semiconductor wafer manufacturing, comprises a chamber process path for processing the wafer, and a device operable to remove particles from the wafer by electrostatic and electromagnetic methodologies wherein the device is installed in the chamber process path.
摘要翻译： 一种用于半导体晶片制造的系统，包括用于处理晶片的腔室处理路径，以及可操作以通过静电和电磁方法从晶片去除颗粒的装置，其中该装置安装在室过程路径中。
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2.发明申请公开(公告)号：US20070039631A1
公开(公告)日：2007-02-22
申请号：US11204691
申请日：2005-08-16
申请人： Chen-Yuan Hsia , Chang-Cheng Hung , Chi-Lun Lu , Shih-Ming Chang , Wen-Chuan Wang , Yen-Bin Huang , Ching-Yu Chang , Chin-Hsiang Lin
发明人： Chen-Yuan Hsia , Chang-Cheng Hung , Chi-Lun Lu , Shih-Ming Chang , Wen-Chuan Wang , Yen-Bin Huang , Ching-Yu Chang , Chin-Hsiang Lin
CPC分类号： B08B6/00 , B08B5/00 , H01L21/02057 , H01L21/67017 , H01L21/67051
摘要： A system for semiconductor wafer manufacturing, comprises a chamber process path for processing the wafer, and a device operable to remove particles from the wafer by electrostatic and electromagnetic methodologies wherein the device is installed in the chamber process path.
摘要翻译： 一种用于半导体晶片制造的系统，包括用于处理晶片的腔室处理路径，以及可操作以通过静电和电磁方法从晶片去除颗粒的装置，其中该装置安装在室过程路径中。
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3.发明授权公开(公告)号：US08046860B2
公开(公告)日：2011-11-01
申请号：US12885630
申请日：2010-09-20
申请人： Chen-Yuan Hsia , Chang-Cheng Hung , Chi-Lun Lu , Shih-Ming Chang , Wen-Chuan Wang , Yen-Bin Huang , Ching-Yu Chang , Chin-Hsiang Lin
发明人： Chen-Yuan Hsia , Chang-Cheng Hung , Chi-Lun Lu , Shih-Ming Chang , Wen-Chuan Wang , Yen-Bin Huang , Ching-Yu Chang , Chin-Hsiang Lin
IPC分类号： A47L13/40
CPC分类号： B08B6/00 , B08B5/00 , H01L21/02057 , H01L21/67017 , H01L21/67051
摘要： A system for semiconductor wafer manufacturing, comprises a chamber process path for processing the wafer, and a device operable to remove particles from the wafer by electrostatic and electromagnetic methodologies wherein the device is installed in the chamber process path.
摘要翻译： 一种用于半导体晶片制造的系统，包括用于处理晶片的腔室处理路径，以及可操作以通过静电和电磁方法从晶片去除颗粒的装置，其中该装置安装在室过程路径中。
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4.发明申请公开(公告)号：US20110005010A1
公开(公告)日：2011-01-13
申请号：US12885630
申请日：2010-09-20
申请人： Chen-Yuan Hsia , Chang-Cheng Hung , Chi-Lun Lu , Shih-Ming Chang , Wen-Chuan Wang , Yen-Bin Huang , Ching-Yu Chang , Chin-Hsiang Lin
发明人： Chen-Yuan Hsia , Chang-Cheng Hung , Chi-Lun Lu , Shih-Ming Chang , Wen-Chuan Wang , Yen-Bin Huang , Ching-Yu Chang , Chin-Hsiang Lin
IPC分类号： A47L13/40
CPC分类号： B08B6/00 , B08B5/00 , H01L21/02057 , H01L21/67017 , H01L21/67051
摘要： A system for semiconductor wafer manufacturing, comprises a chamber process path for processing the wafer, and a device operable to remove particles from the wafer by electrostatic and electromagnetic methodologies wherein the device is installed in the chamber process path.
摘要翻译： 一种用于半导体晶片制造的系统，包括用于处理晶片的腔室处理路径，以及可操作以通过静电和电磁方法从晶片去除颗粒的装置，其中该装置安装在室过程路径中。
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公开(公告)号：US07460251B2
公开(公告)日：2008-12-02
申请号：US11244601
申请日：2005-10-05
申请人： Shih-Ming Chang , Chen-Yuan Hsia , Wen-Chuan Wang , Chi-Lun Lu , Yen-Bin Huang , Chang-Cheng Hung , Chia-Jen Chen , Kai-Chung Liu , Hsin-Chang Lee , Hong-Chang Hsieh
发明人： Shih-Ming Chang , Chen-Yuan Hsia , Wen-Chuan Wang , Chi-Lun Lu , Yen-Bin Huang , Chang-Cheng Hung , Chia-Jen Chen , Kai-Chung Liu , Hsin-Chang Lee , Hong-Chang Hsieh
CPC分类号： G03F7/70625 , H01L22/12 , H01L22/20
摘要： A system and method are disclosed for monitoring a dimensional change of a pattern for an object having a transparent layer exposed through the pattern and a non-transparent pattern laminated therewith. According to the method, a first beam is projected to the pattern. A second beam resulted from the first beam passing through the transparent layer exposed by the pattern, or from the first beam reflected from the non-transparent layer of the pattern, is detected. A value of a predetermined property from the second beam detected is obtained. A variation of the value is monitored for identifying the dimensional change of the pattern.
摘要翻译： 公开了一种用于监测具有通过图案暴露的透明层的物体的图案的尺寸变化和与其层压的不透明图案的系统和方法。 根据该方法，将第一光束投影到图案。 检测到第一光束通过穿过由图案曝光的透明层，或从图案的不透明层反射的第一光束。 获得从所检测的第二光束的预定特性的值。 监测该值的变化以识别图案的尺寸变化。
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公开(公告)号：US20070075037A1
公开(公告)日：2007-04-05
申请号：US11244601
申请日：2005-10-05
申请人： Shih-Ming Chang , Chen-Yuan Hsia , Wen-Chuan Wang , Chi-Lun Lu , Yen-Bin Huang , Chang-Cheng Hung , Chia-Jen Chen , Kai-Chung Liu , Hsin-Chang Lee , Hong Hsieh
发明人： Shih-Ming Chang , Chen-Yuan Hsia , Wen-Chuan Wang , Chi-Lun Lu , Yen-Bin Huang , Chang-Cheng Hung , Chia-Jen Chen , Kai-Chung Liu , Hsin-Chang Lee , Hong Hsieh
IPC分类号： G01L21/30 , H01L21/302 , G01R31/00
CPC分类号： G03F7/70625 , H01L22/12 , H01L22/20
摘要： A system and method are disclosed for monitoring a dimensional change of a pattern for an object having a transparent layer exposed through the pattern and a non-transparent pattern laminated therewith. According to the method, a first beam is projected to the pattern. A second beam resulted from the first beam passing through the transparent layer exposed by the pattern, or from the first beam reflected from the non-transparent layer of the pattern, is detected. A value of a predetermined property from the second beam detected is obtained. A variation of the value is monitored for identifying the dimensional change of the pattern.
摘要翻译： 公开了一种用于监测具有通过图案暴露的透明层的物体的图案的尺寸变化和与其层压的不透明图案的系统和方法。 根据该方法，将第一光束投影到图案。 检测到第一光束通过穿过由图案曝光的透明层，或从图案的不透明层反射的第一光束。 获得从所检测的第二光束的预定特性的值。 监测该值的变化以识别图案的尺寸变化。
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公开(公告)号：US07759136B2
公开(公告)日：2010-07-20
申请号：US11530164
申请日：2006-09-08
申请人： Chang-Cheng Hung , Hung Chang Hsieh , Shih-Ming Chang , Wen-Chuan Wang , Chi-Lun Lu , Allen Hsia , Yen-Bin Huang
发明人： Chang-Cheng Hung , Hung Chang Hsieh , Shih-Ming Chang , Wen-Chuan Wang , Chi-Lun Lu , Allen Hsia , Yen-Bin Huang
摘要： A method for patterning a substrate includes forming a material layer on the substrate; performing a first etching on the material layer to form a pattern; measuring the pattern of the material layer using an optical spectrum metrology tool; determining whether the measuring indicates that the etching step achieved a predefined result; and producing an etching recipe and performing a second etching of the material layer using the etching recipe if the predefined result was not achieved.
摘要翻译： 用于图案化衬底的方法包括在衬底上形成材料层; 在所述材料层上进行第一蚀刻以形成图案; 使用光谱计量工具测量材料层的图案; 确定测量是否指示蚀刻步骤达到预定结果; 并且如果未实现预定结果，则使用蚀刻配方产生蚀刻配方并执行材料层的第二蚀刻。
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公开(公告)号：US08758963B2
公开(公告)日：2014-06-24
申请号：US13554209
申请日：2012-07-20
申请人： Shih-Ming Chang , Chung-Hsing Chang , Wen-Chuan Wang , Chi-Lun Lu , Sheng-Chi Chin , Chin-Hsiang Lin , Chun-Kuang Chen
发明人： Shih-Ming Chang , Chung-Hsing Chang , Wen-Chuan Wang , Chi-Lun Lu , Sheng-Chi Chin , Chin-Hsiang Lin , Chun-Kuang Chen
CPC分类号： G03F1/14 , G03F1/50 , G03F7/70283 , G03F7/70416 , G03H1/0005 , G03H1/0244 , G03H1/08 , G03H1/2205 , G03H2001/0094 , G03H2001/0833 , G03H2210/30 , G03H2224/04 , G03H2240/12 , G03H2240/13 , G03H2240/23 , G03H2270/52
摘要： A hologram reticle and method of patterning a target. A layout pattern for an image to be transferred to a target is converted into a holographic representation of the image. A hologram reticle is manufactured that includes the holographic representation. The hologram reticle is then used to pattern the target. Three-dimensional patterns may be formed in a photoresist layer of the target in a single patterning step. These three-dimensional patterns may be filled to form three-dimensional structures or else used in a multi-surface imaging composition. The holographic representation of the image may also be transferred to a top photoresist layer of a top surface imaging (TSI) semiconductor device, either directly or using the hologram reticle. The top photoresist layer may then be used to pattern an underlying photoresist layer with the image. The lower photoresist layer is used to pattern a material layer of the device.
摘要翻译： 全息图掩模版和图案化目标的方法。 要传输到目标的图像的布局图案被转换成图像的全息图。 制造包括全息图的全息标线。 然后使用全息图标线来对目标进行图案化。 可以在单个图案化步骤中在靶的光致抗蚀剂层中形成三维图案。 这些三维图案可以被填充以形成三维结构，或者用于多表面成像组合物中。 图像的全息图也可以直接地或使用全息图掩模图传递到顶表面成像（TSI）半导体器件的顶部光致抗蚀剂层。 然后可以使用顶部光致抗蚀剂层来用图像对下面的光致抗蚀剂层进行图案化。 下部光致抗蚀剂层用于对该器件的材料层进行图案化。
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公开(公告)号：US20050147895A1
公开(公告)日：2005-07-07
申请号：US10792084
申请日：2004-03-03
申请人： Shih-Ming Chang , Chung-Hsing Chang , Chih-Cheng Chin , Wen-Chuan Wang , Chi-Lun Lu , Sheng-Chi Chin , Chin-Hsiang Lin
发明人： Shih-Ming Chang , Chung-Hsing Chang , Chih-Cheng Chin , Wen-Chuan Wang , Chi-Lun Lu , Sheng-Chi Chin , Chin-Hsiang Lin
CPC分类号： G03F7/70291 , G03F1/50 , G03H1/0005 , G03H1/0244 , G03H1/0808 , G03H1/2205 , G03H2001/0094 , G03H2001/0833 , G03H2210/30 , G03H2210/452 , G03H2224/04 , G03H2240/12 , G03H2240/13 , G03H2240/23 , G03H2270/52
摘要： A hologram reticle and method of patterning a target. A layout pattern for an image to be transferred to a target is converted into a holographic representation of the image. A hologram reticle is manufactured that includes the holographic representation. The hologram reticle is then used to pattern the target. Three-dimensional patterns may be formed in a photoresist layer of the target in a single patterning step. These three-dimensional patterns may be filled to form three-dimensional structures. The holographic representation of the image may also be transferred to a top photoresist layer of a top surface imaging (TSI) semiconductor device, either directly or using the hologram reticle. The top photoresist layer may then be used to pattern an underlying photoresist layer with the image. The lower photoresist layer is used to pattern a material layer of the device.
摘要翻译： 全息图掩模版和图案化目标的方法。 要传输到目标的图像的布局图案被转换成图像的全息图。 制造包括全息图的全息标线。 然后使用全息图标线来对目标进行图案化。 可以在单个图案化步骤中在靶的光致抗蚀剂层中形成三维图案。 可以填充这些三维图案以形成三维结构。 图像的全息图也可以直接地或使用全息图掩模图传递到顶表面成像（TSI）半导体器件的顶部光致抗蚀剂层。 然后可以使用顶部光致抗蚀剂层来用图像对下面的光致抗蚀剂层进行图案化。 下部光致抗蚀剂层用于对该器件的材料层进行图案化。
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公开(公告)号：US20120295185A1
公开(公告)日：2012-11-22
申请号：US13554209
申请日：2012-07-20
申请人： Shih-Ming Chang , Chung-Hsing Chang , Wen-Chuan Wang , Chi-Lun Lu , Sheng-Chi Chin , Chin-Hsiang Lin , Chun-Kuang Chen
发明人： Shih-Ming Chang , Chung-Hsing Chang , Wen-Chuan Wang , Chi-Lun Lu , Sheng-Chi Chin , Chin-Hsiang Lin , Chun-Kuang Chen
CPC分类号： G03F1/14 , G03F1/50 , G03F7/70283 , G03F7/70416 , G03H1/0005 , G03H1/0244 , G03H1/08 , G03H1/2205 , G03H2001/0094 , G03H2001/0833 , G03H2210/30 , G03H2224/04 , G03H2240/12 , G03H2240/13 , G03H2240/23 , G03H2270/52
摘要： A hologram reticle and method of patterning a target. A layout pattern for an image to be transferred to a target is converted into a holographic representation of the image. A hologram reticle is manufactured that includes the holographic representation. The hologram reticle is then used to pattern the target. Three-dimensional patterns may be formed in a photoresist layer of the target in a single patterning step. These three-dimensional patterns may be filled to form three-dimensional structures or else used in a multi-surface imaging composition. The holographic representation of the image may also be transferred to a top photoresist layer of a top surface imaging (TSI) semiconductor device, either directly or using the hologram reticle. The top photoresist layer may then be used to pattern an underlying photoresist layer with the image. The lower photoresist layer is used to pattern a material layer of the device.
摘要翻译： 全息图掩模版和图案化目标的方法。 要传输到目标的图像的布局图案被转换成图像的全息图。 制造包括全息图的全息标线。 然后使用全息图标线来对目标进行图案化。 可以在单个图案化步骤中在靶的光致抗蚀剂层中形成三维图案。 这些三维图案可以被填充以形成三维结构，或者用于多表面成像组合物中。 图像的全息图也可以直接地或使用全息图掩模图传递到顶表面成像（TSI）半导体器件的顶部光致抗蚀剂层。 然后可以使用顶部光致抗蚀剂层来用图像对下面的光致抗蚀剂层进行图案化。 下部光致抗蚀剂层用于对该器件的材料层进行图案化。
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