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1.发明申请ZIRCONIUM, HAFNIUM, TITANIUM, AND SILICON PRECURSORS FOR ALD/CVD 审中-公开用于ALD / CVD的ZIRCONIUM，HAFNIUM，TITANIUM和SILICON PRECURSORS公开(公告)号：US20100112211A1
公开(公告)日：2010-05-06
申请号：US12595383
申请日：2008-04-13
申请人： Chongying Xu , Jeffrey F. Roeder , Tianniu Chen , Bryan C. Hendrix , Brian Benac , Thomas M. Cameron , David W. Peters , Gregory T. Stauf , Leah Maylott
发明人： Chongying Xu , Jeffrey F. Roeder , Tianniu Chen , Bryan C. Hendrix , Brian Benac , Thomas M. Cameron , David W. Peters , Gregory T. Stauf , Leah Maylott
CPC分类号： C23C16/405 , C07C211/65 , C07F7/003 , C07F17/00 , C23C16/18
摘要： Zirconium, hafnium, titanium and silicon precursors useful for atomic layer deposition (ALD) and chemical vapor deposition (CVD) of corresponding zirconium-containing, hafnium-containing, titanium-containing and silicon-containing films, respectively. The disclosed precursors achieve highly conformal deposited films characterized by minimal carbon incorporation.
摘要翻译： 分别用于相应的含锆，含铪，含钛和含硅膜的原子层沉积（ALD）和化学气相沉积（CVD）的锆，铪，钛和硅前体。 所公开的前体实现了以最小碳掺入为特征的高度保形的沉积膜。
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公开(公告)号：US20100279011A1
公开(公告)日：2010-11-04
申请号：US12740992
申请日：2008-10-31
申请人： Tianniu Chen , Chongying Xu , Bryan C. Hendrix , William Hunks , Thomas M. Cameron , Matthias Stender , Gregory T. Stauf , Jeffrey F. Roeder
发明人： Tianniu Chen , Chongying Xu , Bryan C. Hendrix , William Hunks , Thomas M. Cameron , Matthias Stender , Gregory T. Stauf , Jeffrey F. Roeder
CPC分类号： C07F9/94
摘要： Bismuth precursors having utility for forming highly conformal bismuth-containing films by low temperature (
摘要翻译： 铋前体可用于通过低温（<300℃）气相沉积方法如CVD和ALD形成高保形含铋的膜，包括氨基铋，胍铋酸盐，异钌酸铋，氨基甲酸铋和硫代氨基甲酸铋，铋β- 二酮酸酯，二酮基铋，二酮亚胺铋，铋烯丙基酯，环戊二烯基铋，烷基铋，醇铋，铋配合物的铋甲硅烷基，铋甲硅烷基酰胺，铋螯合酰胺和铋二碲酰亚氨基二膦酸铋。 还描述了制备这种前体的方法，以及适用于制造微电子器件产品的这种前体的包装形式。 这些铋前体有利地用于形成含铋的膜，例如GBT，Bi2Te3，Bi4Ti3O12，SrBi2Ta2O9，Bi-Ta-O，BiP和含有铋的含铋膜的膜。
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公开(公告)号：US20120127629A1
公开(公告)日：2012-05-24
申请号：US13264745
申请日：2010-04-14
申请人： Jeffrey F. Roeder , Bryan C. Hendrix , Steven M. Bilodeau , Gregory T. Stauf , Tianniu Chen , Thomas M. Cameron , Chongying Xu
发明人： Jeffrey F. Roeder , Bryan C. Hendrix , Steven M. Bilodeau , Gregory T. Stauf , Tianniu Chen , Thomas M. Cameron , Chongying Xu
CPC分类号： H01G4/1209 , C04B35/49 , C04B35/491 , C04B35/6325 , C04B2235/3206 , C04B2235/3213 , C04B2235/3217 , C04B2235/3224 , C04B2235/3225 , C04B2235/3227 , C04B2235/3229 , C04B2235/441 , C04B2235/449 , H01G4/1218 , H01G4/1236 , H01G4/1254 , H01G4/20 , H01L21/02194 , H01L21/02271 , H01L21/3142 , H01L28/40 , Y10T428/12493 , Y10T428/12674 , Y10T428/12806 , Y10T428/12819 , Y10T428/1284
摘要： A composite dielectric material including an early transition metal or metal oxide base material and a dopant, co-deposited, alloying or layering secondary material, selected from among Nb, Ge, Ta, La, Y, Ce, Pr, Nd, Gd, Dy, Sr, Ba, Ca, and Mg, and oxides of such metals, and alumina as a dopant or alloying secondary material. Such composite dielectric material can be formed by vapor deposition processes, e.g., ALD, using suitable precursors, to form microelectronic devices such as ferroelectric high k capacitors, gate structures, DRAMs, and the like.
摘要翻译： 包括早期过渡金属或金属氧化物基材以及选自Nb，Ge，Ta，La，Y，Ce，Pr，Nd，Gd，Dy中的掺杂剂，共沉积，合金化或分层次级材料的复合电介质材料 ，Sr，Ba，Ca和Mg，以及这些金属的氧化物，以及作为掺杂剂或合金化二次材料的氧化铝。 这种复合介电材料可以通过使用合适的前体的气相沉积工艺（例如ALD）形成微电子器件，例如铁电高k电容器，栅极结构，DRAM等。
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4.发明申请公开(公告)号：US20090305458A1
公开(公告)日：2009-12-10
申请号：US12307101
申请日：2007-03-12
申请人： William Hunks , Tianniu Chen , Chongying Xu , Jeffrey F. Roeder , Thomas H. Baum , Melissa A. Petruska , Matthias Stender , Philip S.H. Chen , Gregory T. Stauf , Bryan C. Hendrix
发明人： William Hunks , Tianniu Chen , Chongying Xu , Jeffrey F. Roeder , Thomas H. Baum , Melissa A. Petruska , Matthias Stender , Philip S.H. Chen , Gregory T. Stauf , Bryan C. Hendrix
CPC分类号： H01L45/1616 , C07C251/08 , C07F7/003 , C07F7/10 , C07F7/28 , C07F9/90 , C07F9/902 , C07F17/00 , C23C16/18 , C23C16/305 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1683
摘要： Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.
摘要翻译： 描述了可用于相应的含金属薄膜的CVD / ALD的锑，锗和碲前体，以及包含这些前体的组合物，制备这些前体的方法，以及使用这种前体制备的膜和微电子器件产品，以及相应的制造 方法。 本发明的前体可用于形成锗 - 锑 - 碲（GST）膜和微电子器件产品，例如包括这种膜的相变存储器件。
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5.发明授权公开(公告)号：US08268665B2
公开(公告)日：2012-09-18
申请号：US13168979
申请日：2011-06-26
申请人： William Hunks , Tianniu Chen , Chongying Xu , Jeffrey F. Roeder , Thomas H. Baum , Matthias Stender , Philip S. H. Chen , Gregory T. Stauf , Bryan C. Hendrix
发明人： William Hunks , Tianniu Chen , Chongying Xu , Jeffrey F. Roeder , Thomas H. Baum , Matthias Stender , Philip S. H. Chen , Gregory T. Stauf , Bryan C. Hendrix
IPC分类号： H01L21/06
CPC分类号： H01L45/1616 , C07C251/08 , C07F7/003 , C07F7/10 , C07F7/28 , C07F9/90 , C07F9/902 , C07F17/00 , C23C16/18 , C23C16/305 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1683
摘要： Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.
摘要翻译： 描述了可用于相应的含金属薄膜的CVD / ALD的锑，锗和碲前体，以及包含这些前体的组合物，制备这些前体的方法，以及使用这种前体制备的膜和微电子器件产品，以及相应的制造 方法。 本发明的前体可用于形成锗 - 锑 - 碲（GST）膜和微电子器件产品，例如包括这种膜的相变存储器件。
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6.发明授权公开(公告)号：US08008117B2
公开(公告)日：2011-08-30
申请号：US12860906
申请日：2010-08-22
申请人： William Hunks , Tianniu Chen , Chongying Xu , Jeffrey F. Roeder , Thomas H. Baum , Melissa A. Petruska , Matthias Stender , Philip S. H. Chen , Gregory T. Stauf , Bryan C. Hendrix
发明人： William Hunks , Tianniu Chen , Chongying Xu , Jeffrey F. Roeder , Thomas H. Baum , Melissa A. Petruska , Matthias Stender , Philip S. H. Chen , Gregory T. Stauf , Bryan C. Hendrix
IPC分类号： H01L21/06
CPC分类号： H01L45/1616 , C07C251/08 , C07F7/003 , C07F7/10 , C07F7/28 , C07F9/90 , C07F9/902 , C07F17/00 , C23C16/18 , C23C16/305 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1683
摘要： Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.
摘要翻译： 描述了可用于相应的含金属薄膜的CVD / ALD的锑，锗和碲前体，以及包含这些前体的组合物，制备这些前体的方法，以及使用这种前体制备的膜和微电子器件产品，以及相应的制造 方法。 本发明的前体可用于形成锗 - 锑 - 碲（GST）膜和微电子器件产品，例如包括这种膜的相变存储器件。
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公开(公告)号：US20130029456A1
公开(公告)日：2013-01-31
申请号：US13622233
申请日：2012-09-18
申请人： William Hunks , Tianniu Chen , Chongying Xu , Jeffrey F. Roeder , Thomas H. Baum , Matthias Stender , Philip S.H. Chen , Gregory T. Stauf , Bryan C. Hendrix
发明人： William Hunks , Tianniu Chen , Chongying Xu , Jeffrey F. Roeder , Thomas H. Baum , Matthias Stender , Philip S.H. Chen , Gregory T. Stauf , Bryan C. Hendrix
IPC分类号： H01L45/00
CPC分类号： H01L45/1616 , C07C251/08 , C07F7/003 , C07F7/10 , C07F7/28 , C07F9/90 , C07F9/902 , C07F17/00 , C23C16/18 , C23C16/305 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1683
摘要： Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.
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8.发明授权公开(公告)号：US07838329B2
公开(公告)日：2010-11-23
申请号：US12307101
申请日：2007-05-12
申请人： William Hunks , Tianniu Chen , Chongying Xu , Jeffrey F. Roeder , Thomas H. Baum , Melissa A. Petruska , Matthias Stender , Philip S. H. Chen , Gregory T. Stauf , Bryan C. Hendrix
发明人： William Hunks , Tianniu Chen , Chongying Xu , Jeffrey F. Roeder , Thomas H. Baum , Melissa A. Petruska , Matthias Stender , Philip S. H. Chen , Gregory T. Stauf , Bryan C. Hendrix
IPC分类号： H01L21/06
CPC分类号： H01L45/1616 , C07C251/08 , C07F7/003 , C07F7/10 , C07F7/28 , C07F9/90 , C07F9/902 , C07F17/00 , C23C16/18 , C23C16/305 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1683
摘要： Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.
摘要翻译： 描述了可用于相应的含金属薄膜的CVD / ALD的锑，锗和碲前体，以及包含这些前体的组合物，制备这些前体的方法，以及使用这种前体制备的膜和微电子器件产品，以及相应的制造 方法。 本发明的前体可用于形成锗 - 锑 - 碲（GST）膜和微电子器件产品，例如包括这种膜的相变存储器件。
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公开(公告)号：US20090124039A1
公开(公告)日：2009-05-14
申请号：US12300459
申请日：2007-03-12
申请人： Jeffrey F. Roeder , Thomas H. Baum , Bryan C. Hendrix , Gregory T. Stauf , Chongying Xu , William Hunks , Tianniu Chen , Matthias Stender
发明人： Jeffrey F. Roeder , Thomas H. Baum , Bryan C. Hendrix , Gregory T. Stauf , Chongying Xu , William Hunks , Tianniu Chen , Matthias Stender
IPC分类号： H01L51/30 , H01L21/06 , C07D401/02 , C07F7/30 , C07F7/08
CPC分类号： H01L51/0002 , C07F7/30 , C23C16/305 , C23C16/45553
摘要： A system and method for forming a phase change memory material on a substrate, in which the substrate is contacted with precursors for a phase change memory chalcogenide alloy under conditions producing deposition of the chalcogenide alloy on the substrate, at temperature below 350° C. with the contacting being carried out via chemical vapor deposition or atomic layer deposition. Various tellurium, germanium and germanium-tellurium precursors are described, which are useful for forming GST phase change memory films on substrates.
摘要翻译： 一种用于在基板上形成相变记忆材料的系统和方法，其中在温度低于350℃的条件下，在产生硫属化物合金沉积的条件下，在温度低于350℃的条件下，基板与相变存储器硫族化合物的前体接触， 通过化学气相沉积或原子层沉积进行接触。 描述了各种碲，锗和锗 - 碲前体，其可用于在基底上形成GST相变记忆膜。
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公开(公告)号：US08679894B2
公开(公告)日：2014-03-25
申请号：US13610928
申请日：2012-09-12
申请人： Jeffrey F. Roeder , Thomas H. Baum , Bryan C. Hendrix , Gregory T. Stauf , Chongying Xu , William Hunks , Tianniu Chen , Matthias Stender
发明人： Jeffrey F. Roeder , Thomas H. Baum , Bryan C. Hendrix , Gregory T. Stauf , Chongying Xu , William Hunks , Tianniu Chen , Matthias Stender
IPC分类号： H01L51/40
CPC分类号： H01L51/0002 , C07F7/30 , C23C16/305 , C23C16/45553
摘要： A system and method for forming a phase change memory material on a substrate, in which the substrate is contacted with precursors for a phase change memory chalcogenide alloy under conditions producing deposition of the chalcogenide alloy on the substrate, at temperature below 350° C., with the contacting being carried out via chemical vapor deposition or atomic layer deposition. Various tellurium, germanium and germanium-tellurium precursors are described, which are useful for forming GST phase change memory films on substrates.
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