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    Process for fabricating bipolar and BiCMOS devices
    1.
    发明授权
    Process for fabricating bipolar and BiCMOS devices 失效
    制造双极和BiCMOS器件的工艺

    公开(公告)号：US06121101A

    公开(公告)日：2000-09-19

    申请号：US42388

    申请日：1998-03-12

    申请人： Clifford Alan King ,  Kwok K. Ng

    发明人： Clifford Alan King ,  Kwok K. Ng

    IPC分类号： H01L21/331 ,  H01L21/8222 ,  H01L21/8248 ,  H01L21/8249 ,  H01L27/06 ,  H01L29/732

    CPC分类号： H01L21/8249

    摘要： A process for device fabrication in which amorphous silicon is deposited into a narrow gap is disclosed. The gap is an opening between two layers of material. The gap results when a window is formed in one of the two layers and a portion of a third layer at the base of the window is removed. In the formation of a bipolar device, a layer of oxide is formed on a silicon substrate and a layer of silicon is formed on the oxide layer which serves as the extrinsic base for the device. In the bipolar device, a window is formed in the polysilicon and the oxide layer at the base of the window is then removed. In the bipolar device, the silicon substrate underlies the gap and the extrinsic base silicon overlies the gap. When the oxide is removed from the base of the window, a portion of the oxide layer underlying the extrinsic base silicon is removed as well, thereby forming a gap between the extrinsic base silicon and the underlying silicon substrate. In the process of the present invention, the resulting gap has a proximate end which is the opening of the gap into a window and a distal end which is the interface between the gap and the remaining oxide. The width of the gap is less than about 20 nm. The gap is then subjected to conditions that cause the gap to have a first height at its proximate end which is greater than its height at its distal end. The tapered gap is then filled with polysilicon. Because of its tapered configuration, the polysilicon uniformly fills the gap, without significant voids therein.

    摘要翻译： 公开了一种其中非晶硅沉积到窄间隙中的器件制造工艺。 间隙是两层材料之间的开口。 当窗口形成在两个层中的一个层中并且在窗口的基部处的第三层的一部分被去除时，产生间隙。 在双极器件的形成中，在硅衬底上形成氧化物层，并且在作为器件的外在基极的氧化物层上形成硅层。 在双极器件中，在多晶硅中形成窗口，然后去除窗口底部的氧化物层。 在双极器件中，硅衬底位于间隙之下，而外部基极硅覆盖在间隙上。 当从窗口的底部去除氧化物时，除去外部基底硅下面的一部分氧化物层，从而在外部基极硅和下面的硅衬底之间形成间隙。 在本发明的方法中，所得到的间隙具有近端，该近端是间隙进入窗口的开口，而远端是间隙和剩余氧化物之间的界面。 间隙的宽度小于约20nm。 然后使间隙受到使其间隙在其近端具有大于其远端高度的第一高度的条件。 然后用多晶硅填充锥形间隙。 由于其锥形构造，多晶硅均匀地填充间隙，其中没有显着的空隙。

    IMAGE SENSOR COMPRISING ISOLATED GERMANIUM PHOTODETECTORS INTEGRATED WITH A SILICON SUBSTRATE AND SILICON CIRCUITRY
    5.
    发明申请
    IMAGE SENSOR COMPRISING ISOLATED GERMANIUM PHOTODETECTORS INTEGRATED WITH A SILICON SUBSTRATE AND SILICON CIRCUITRY 有权
    包含与硅衬底和硅电路集成的隔离锗光电子的图像传感器

    公开(公告)号：US20120043637A1

    公开(公告)日：2012-02-23

    申请号：US13116411

    申请日：2011-05-26

    申请人： Clifford Alan King ,  Conor S. Rafferty

    发明人： Clifford Alan King ,  Conor S. Rafferty

    IPC分类号： H01L31/028

    CPC分类号： H01L27/14634 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02639 ,  H01L27/14632 ,  H01L27/14643 ,  H01L27/14649 ,  H01L31/028 ,  H01L2924/351

    摘要： In accordance with the invention, an improved image sensor comprises an array of germanium photosensitive elements integrated with a silicon substrate and integrated with silicon readout circuits. The silicon transistors are formed first on a silicon substrate, using well known silicon wafer fabrication techniques. The germanium elements are subsequently formed overlying the silicon by epitaxial growth. The germanium elements are advantageously grown within surface openings of a dielectric cladding. Wafer fabrication techniques are applied to the elements to form isolated germanium photodiodes. Since temperatures needed for germanium processing are lower than those for silicon processing, the formation of the germanium devices need not affect the previously formed silicon devices. Insulating and metallic layers are then deposited and patterned to interconnect the silicon devices and to connect the germanium devices to the silicon circuits. The germanium elements are thus integrated to the silicon by epitaxial growth and integrated to the silicon circuitry by common metal layers.

    摘要翻译： 根据本发明，改进的图像传感器包括与硅衬底集成并与硅读出电路集成的锗感光元件的阵列。 首先使用公知的硅晶片制造技术在硅衬底上形成硅晶体管。 随后通过外延生长将锗元素覆盖在硅上。 有利地，锗元素在电介质包层的表面开口内生长。 将晶片制造技术应用于元件以形成分离的锗光电二极管。 由于锗处理所需的温度低于硅处理所需的温度，锗器件的形成不必影响先前形成的硅器件。 然后沉积和图案化绝缘和金属层以互连硅器件并将锗器件连接到硅电路。 因此，锗元素通过外延生长与硅集成到一起，并通过公共金属层与硅电路集成。

    Optical receiver comprising a receiver photodetector integrated with an imaging array
    6.
    发明授权
    Optical receiver comprising a receiver photodetector integrated with an imaging array 有权
    光接收器包括与成像阵列集成的接收器光电检测器

    公开(公告)号：US07643755B2

    公开(公告)日：2010-01-05

    申请号：US10964266

    申请日：2004-10-13

    申请人： Conor S. Rafferty ,  Clifford Alan King

    发明人： Conor S. Rafferty ,  Clifford Alan King

    IPC分类号： H04B10/00 ,  H04B10/06

    CPC分类号： H04B10/118

    摘要： A high-speed optical communications cell is integrated at the interior of a two-dimensional imaging array. The combined receiver and imager carries out both photodetection (converting photons to electrons) and circuit functions (e.g. amplifying and integrating the signals from the photodetectors). The high-speed receiver cell comprises a photodetector and a high-speed amplification circuit, providing an electrical output which can follow a rapidly varying optical signal falling on the photodetector. The imaging array comprises an array of photodetectors and readout circuits, providing an electrical representation of the variation of light with position across the receiver surface. The presence of an imaging array surrounding the communications receiver, and in the same plane as it, allows a single optical path to be used for source acquisition and tracking as well as for data reception.

    摘要翻译： 高速光通信单元集成在二维成像阵列的内部。 组合的接收器和成像器执行光电检测（将光子转换成电子）和电路功能（例如放大和积分来自光电检测器的信号）。 高速接收器单元包括光电检测器和高速放大电路，提供可以跟随落在光电检测器上的快速变化的光信号的电输出。 该成像阵列包括光电检测器和读出电路的阵列，提供了具有横跨接收器表面的位置的光的变化的电表示。 存在围绕通信接收器并且与其相同的平面中的成像阵列允许将单个光路用于源获取和跟踪以及用于数据接收。

    Semiconductor devices with reduced active region defects and unique contacting schemes
    7.
    发明授权
    Semiconductor devices with reduced active region defects and unique contacting schemes 有权
    半导体器件具有减少的有源区缺陷和独特的接触方案

    公开(公告)号：US07012314B2

    公开(公告)日：2006-03-14

    申请号：US10453037

    申请日：2003-06-03

    申请人： Jeffrey Devin Bude ,  Malcolm Carroll ,  Clifford Alan King

    发明人： Jeffrey Devin Bude ,  Malcolm Carroll ,  Clifford Alan King

    IPC分类号： H01L27/14 ,  H01L31/00 ,  H01L31/0232 ,  H01L31/0203 ,  H01L31/117

    CPC分类号： H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L27/14649

    摘要： A method of making a semiconductor device having a predetermined epitaxial region, such as an active region, with reduced defect density includes the steps of: (a) forming a dielectric cladding region on a major surface of a single crystal body of a first material; (b) forming a first opening that extends to a first depth into the cladding region; (c) forming a smaller second opening, within the first opening, that extends to a second depth greater than the first depth and that exposes an underlying portion of the major surface of the single crystal body; (d) epitaxially growing regions of a second semiconductor material in each of the openings and on the top of the cladding region; (e) controlling the dimensions of the second opening so that defects are confined to the epitaxial regions grown within the second opening and on top of the cladding region, a first predetermined region being located within the first opening and being essentially free of defects; (D planarizing the top of the device to remove all epitaxial regions that extend above the top of the cladding layer, thereby making the top of the first predetermined region grown in the second opening essentially flush with the top of the cladding region; and (g) performing additional steps to complete the fabrication of the device. Also described are unique devices, such as photodetectors and MOSFETs, fabricated by this method, as well as unique contacting configurations that enhance their performance.

    摘要翻译： 制造具有减小的缺陷密度的诸如有源区域的预定外延区域的半导体器件的方法包括以下步骤：（a）在第一材料的单晶体的主表面上形成介电包层区; （b）形成延伸到所述包层区域的第一深度的第一开口; （c）在所述第一开口内形成较小的第二开口，所述较小的第二开口延伸到大于所述第一深度的第二深度并且暴露所述单晶体主表面的下部; （d）在每个开口和包层区域的顶部上的第二半导体材料的外延生长区域; （e）控制第二开口的尺寸，使得缺陷被限制在在第二开口内生长并且在包层区域的顶部上的外延区域，第一预定区域位于第一开口内并且基本上没有缺陷; （D平面化器件的顶部以移除在包覆层的顶部之上延伸的所有外延区域，从而使得在第二开口中生长的第一预定区域的顶部基本上与包层区域的顶部齐平;以及（g ）执行附加步骤以完成器件的制造，还描述了通过该方法制造的独特器件，例如光电检测器和MOSFET，以及增强其性能的独特接触配置。

    SEMICONDUCTOR PHOTONIC DEVICES WITH ENHANCED RESPONSIVITY AND REDUCED STRAY LIGHT
    8.
    发明申请
    SEMICONDUCTOR PHOTONIC DEVICES WITH ENHANCED RESPONSIVITY AND REDUCED STRAY LIGHT 审中-公开
    具有增强响应和降低光束的半导体光电器件

    公开(公告)号：US20100044823A1

    公开(公告)日：2010-02-25

    申请号：US12610522

    申请日：2009-11-02

    申请人： Conor S. Rafferty ,  Clifford Alan King

    发明人： Conor S. Rafferty ,  Clifford Alan King

    IPC分类号： H01L31/10

    CPC分类号： H01L27/14623 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L27/14685 ,  H01L31/02164

    摘要： In accordance with the invention, a photonic device comprises a semiconductor substrate including at least one circuit component comprising a metal silicide layer and an overlying layer including at least one photoresponsive component. The metal silicide layer is disposed between the circuit component and the photoresponsive component to prevent entry into the circuit component of light that penetrates the photoresponsive component. The silicide layer advantageously reflects the light back into the photoresponsive element. In addition, the overlying layer can include one or more reflective layers to reduce entry of oblique light into the photoresponsive component. In an advantageous embodiment, the substrate comprises single-crystal silicon including one or more insulated gate field effect transistors (IGFETs), and/or capacitors, and the photoresponsive element comprises germanium and/or germanium alloy epitaxially grown from seeds on the silicon. The metal silicide layer can comprise the gate of the IGFET and/or an electrode of the capacitor.

    摘要翻译： 根据本发明，光子器件包括半导体衬底，其包括至少一个包括金属硅化物层的电路部件和包括至少一个光响应部件的上覆层。 金属硅化物层设置在电路部件和光响应部件之间，以防止进入穿过光响应部件的光的电路部件。 硅化物层有利地将光反射回光响应元件。 此外，上覆层可以包括一个或多个反射层，以减少斜光进入光响应部件。 在有利的实施例中，衬底包括包括一个或多个绝缘栅场效应晶体管（IGFET）和/或电容器的单晶硅，并且光响应元件包括从硅上的种子外延生长的锗和/或锗合金。 金属硅化物层可以包括IGFET的栅极和/或电容器的电极。

    IMAGE SENSOR COMPRISING ISOLATED GERMANIUM PHOTODETECTORS INTEGRATED WITH A SILICON SUBSTRATE AND SILICON CIRCUITRY
    9.
    发明申请
    IMAGE SENSOR COMPRISING ISOLATED GERMANIUM PHOTODETECTORS INTEGRATED WITH A SILICON SUBSTRATE AND SILICON CIRCUITRY 有权
    包含与硅衬底和硅电路集成的隔离锗光电子的图像传感器

    公开(公告)号：US20090072284A1

    公开(公告)日：2009-03-19

    申请号：US12271601

    申请日：2008-11-14

    申请人： Clifford Alan King ,  Conor S. Rafferty

    发明人： Clifford Alan King ,  Conor S. Rafferty

    IPC分类号： H01L31/112 ,  H01L31/028

    CPC分类号： H01L27/14634 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02639 ,  H01L27/14632 ,  H01L27/14643 ,  H01L27/14649 ,  H01L31/028 ,  H01L2924/351

    摘要： In accordance with the invention, an improved image sensor comprises an array of germanium photosensitive elements integrated with a silicon substrate and integrated with silicon readout circuits. The silicon transistors are formed first on a silicon substrate, using well known silicon wafer fabrication techniques. The germanium elements are subsequently formed overlying the silicon by epitaxial growth. The germanium elements are advantageously grown within surface openings of a dielectric cladding. Wafer fabrication techniques are applied to the elements to form isolated germanium photodiodes. Since temperatures needed for germanium processing are lower than those for silicon processing, the formation of the germanium devices need not affect the previously formed silicon devices. Insulating and metallic layers are then deposited and patterned to interconnect the silicon devices and to connect the germanium devices to the silicon circuits. The germanium elements are thus integrated to the silicon by epitaxial growth and integrated to the silicon circuitry by common metal layers.

    摘要翻译： 根据本发明，改进的图像传感器包括与硅衬底集成并与硅读出电路集成的锗感光元件的阵列。 首先使用公知的硅晶片制造技术在硅衬底上形成硅晶体管。 随后通过外延生长将锗元素覆盖在硅上。 有利地，锗元素在电介质包层的表面开口内生长。 将晶片制造技术应用于元件以形成分离的锗光电二极管。 由于锗处理所需的温度低于硅处理所需的温度，锗器件的形成不必影响先前形成的硅器件。 然后沉积和图案化绝缘和金属层以互连硅器件并将锗器件连接到硅电路。 因此，锗元素通过外延生长与硅集成到一起，并通过公共金属层与硅电路集成。

    Image sensor comprising isolated germanium photodetectors integrated with a silicon substrate and silicon circuitry
    10.
    发明授权
    Image sensor comprising isolated germanium photodetectors integrated with a silicon substrate and silicon circuitry 有权
    图像传感器包括与硅衬底和硅电路集成的孤立的锗光电探测器

    公开(公告)号：US07453129B2

    公开(公告)日：2008-11-18

    申请号：US10964057

    申请日：2004-10-13

    申请人： Clifford Alan King ,  Conor S. Rafferty

    发明人： Clifford Alan King ,  Conor S. Rafferty

    IPC分类号： H01L27/14 ,  H01L29/82 ,  H01L29/84

    CPC分类号： H01L27/14634 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02639 ,  H01L27/14632 ,  H01L27/14643 ,  H01L27/14649 ,  H01L31/028 ,  H01L2924/351

    摘要： In accordance with the invention, an improved image sensor comprises an array of germanium photosensitive elements integrated with a silicon substrate and integrated with silicon readout circuits. The silicon transistors are formed first on a silicon substrate, using well known silicon wafer fabrication techniques. The germanium elements are subsequently formed overlying the silicon by epitaxial growth. The germanium elements are advantageously grown within surface openings of a dielectric cladding. Wafer fabrication techniques are applied to the elements to form isolated germanium photodiodes. Since temperatures needed for germanium processing are lower than those for silicon processing, the formation of the germanium devices need not affect the previously formed silicon devices. Insulating and metallic layers are then deposited and patterned to interconnect the silicon devices and to connect the germanium devices to the silicon circuits. The germanium elements are thus integrated to the silicon by epitaxial growth and integrated to the silicon circuitry by common metal layers.

    摘要翻译： 根据本发明，改进的图像传感器包括与硅衬底集成并与硅读出电路集成的锗感光元件的阵列。 首先使用公知的硅晶片制造技术在硅衬底上形成硅晶体管。 随后通过外延生长将锗元素覆盖在硅上。 有利地，锗元素在电介质包层的表面开口内生长。 将晶片制造技术应用于元件以形成分离的锗光电二极管。 由于锗处理所需的温度低于硅处理所需的温度，锗器件的形成不必影响先前形成的硅器件。 然后沉积和图案化绝缘和金属层以互连硅器件并将锗器件连接到硅电路。 因此，锗元素通过外延生长与硅集成到一起，并通过公共金属层与硅电路集成。