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公开(公告)号：US08772161B2
公开(公告)日：2014-07-08
申请号：US13205063
申请日：2011-08-08
IPC分类号： H01L21/44
CPC分类号： H01L29/665 , H01L21/28518 , H01L21/76828 , H01L21/76886 , H01L21/823814 , H01L21/823842 , H01L21/823871 , H01L21/84 , H01L27/1203
摘要： A method for modifying the chemistry or microstructure of silicon-based technology via an annealing process is provided. The method includes depositing a reactive material layer within a selected proximity to an interconnect, igniting the reactive material layer, and annealing the interconnect via heat transferred from the ignited reactive material layer. The method can also be implemented in connection with a silicide/silicon interface as well as a zone of silicon-based technology.
摘要翻译： 提供了一种通过退火工艺改性硅基技术的化学或微结构的方法。 该方法包括将反应性材料层沉积在选定的互连附近，点燃反应性材料层，以及通过从点燃的反应性材料层传递的热量使互连件退火。 该方法还可以结合硅化物/硅界面以及硅基技术的区域来实现。
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公开(公告)号：US20130040454A1
公开(公告)日：2013-02-14
申请号：US13205063
申请日：2011-08-08
IPC分类号： H01L21/28 , H01L21/304 , H01L21/302
CPC分类号： H01L29/665 , H01L21/28518 , H01L21/76828 , H01L21/76886 , H01L21/823814 , H01L21/823842 , H01L21/823871 , H01L21/84 , H01L27/1203
摘要： A method for modifying the chemistry or microstructure of silicon-based technology via an annealing process is provided. The method includes depositing a reactive material layer within a selected proximity to an interconnect, igniting the reactive material layer, and annealing the interconnect via heat transferred from the ignited reactive material layer. The method can also be implemented in connection with a silicide/silicon interface as well as a zone of silicon-based technology.
摘要翻译： 提供了一种通过退火工艺改性硅基技术的化学或微结构的方法。 该方法包括将反应性材料层沉积在选定的互连附近，点燃反应性材料层，以及通过从点燃的反应性材料层传递的热量使互连件退火。 该方法还可以结合硅化物/硅界面以及硅基技术的区域来实现。
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3.发明授权Method and structure of forming silicide and diffusion barrier layer with direct deposited film on silicon 有权在硅上直接沉积薄膜形成硅化物和扩散阻挡层的方法和结构公开(公告)号：US08293643B2
公开(公告)日：2012-10-23
申请号：US12819634
申请日：2010-06-21
申请人： Cyril Cabral, Jr. , John M. Cotte , Kathryn C. Fisher , Laura L. Kosbar , Christian Lavoie , Zhu Liu , Kenneth P. Rodbell , Xiaoyan Shao
发明人： Cyril Cabral, Jr. , John M. Cotte , Kathryn C. Fisher , Laura L. Kosbar , Christian Lavoie , Zhu Liu , Kenneth P. Rodbell , Xiaoyan Shao
IPC分类号： H01L21/477
CPC分类号： H01L21/28518 , H01L21/76841 , H01L23/53238 , H01L31/022408 , H01L31/022425 , H01L2924/0002 , Y02E10/50 , H01L2924/00
摘要： A semiconductor device or a photovoltaic cell having a contact structure, which includes a silicon (Si) substrate; a metal alloy layer deposited on the silicon substrate; a metal silicide layer and a diffusion layer formed simultaneously from thermal annealing the metal alloy layer; and a metal layer deposited on the metal silicide and barrier layers.
摘要翻译： 具有接触结构的半导体器件或光电池，其包括硅（Si）衬底; 沉积在硅衬底上的金属合金层; 金属硅化物层和由金属合金层热退火同时形成的扩散层; 以及沉积在金属硅化物和阻挡层上的金属层。
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4.发明申请METHOD AND STRUCTURE OF FORMING SILICIDE AND DIFFUSION BARRIER LAYER WITH DIRECT DEPOSITED FILM ON SI 审中-公开形成硅胶和扩散阻挡层的方法和结构与直接沉积膜在SI公开(公告)号：US20130001784A1
公开(公告)日：2013-01-03
申请号：US13611363
申请日：2012-09-12
申请人： Cyril Cabral, JR. , John M. Cotte , Kathryn C. Fisher , Laura L. Kosbar , Christian Lavoie , Zhu Liu , Kenneth P. Rodbell , Xiaoyan Shao
发明人： Cyril Cabral, JR. , John M. Cotte , Kathryn C. Fisher , Laura L. Kosbar , Christian Lavoie , Zhu Liu , Kenneth P. Rodbell , Xiaoyan Shao
IPC分类号： H01L23/48
CPC分类号： H01L21/28518 , H01L21/76841 , H01L23/53238 , H01L31/022408 , H01L31/022425 , H01L2924/0002 , Y02E10/50 , H01L2924/00
摘要： A semiconductor device or a photovoltaic cell having a contact structure, which includes a silicon (Si) substrate; a metal alloy layer deposited on the silicon substrate; a metal silicide layer and a diffusion layer formed simultaneously from thermal annealing the metal alloy layer; and a metal layer deposited on the metal silicide and barrier layers.
摘要翻译： 具有接触结构的半导体器件或光电池，其包括硅（Si）衬底; 沉积在硅衬底上的金属合金层; 金属硅化物层和由金属合金层热退火同时形成的扩散层; 以及沉积在金属硅化物和阻挡层上的金属层。
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5.发明申请Method and Structure of Forming Silicide and Diffusion Barrier Layer With Direct Deposited Film on Silicon 有权在硅上形成具有直接沉积膜的硅化物和扩散阻挡层的方法和结构公开(公告)号：US20110309508A1
公开(公告)日：2011-12-22
申请号：US12819634
申请日：2010-06-21
申请人： Cyril Cabral, JR. , John M. Cotte , Kathryn C. Fisher , Laura L. Kosbar , Christian Lavoie , Zhu Liu , Kenneth P. Rodbell , Xiaoyan Shao
发明人： Cyril Cabral, JR. , John M. Cotte , Kathryn C. Fisher , Laura L. Kosbar , Christian Lavoie , Zhu Liu , Kenneth P. Rodbell , Xiaoyan Shao
IPC分类号： H01L23/485 , H01L21/768
CPC分类号： H01L21/28518 , H01L21/76841 , H01L23/53238 , H01L31/022408 , H01L31/022425 , H01L2924/0002 , Y02E10/50 , H01L2924/00
摘要： A semiconductor device or a photovoltaic cell having a contact structure, which includes a silicon (Si) substrate; a metal alloy layer deposited on the silicon substrate; a metal silicide layer and a diffusion layer formed simultaneously from thermal annealing the metal alloy layer; and a metal layer deposited on the metal silicide and barrier layers.
摘要翻译： 具有接触结构的半导体器件或光电池，其包括硅（Si）衬底; 沉积在硅衬底上的金属合金层; 金属硅化物层和由金属合金层热退火同时形成的扩散层; 以及沉积在金属硅化物和阻挡层上的金属层。
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公开(公告)号：US07749898B2
公开(公告)日：2010-07-06
申请号：US12145163
申请日：2008-06-24
申请人： Paul R. Besser , Christian Lavoie , Cyril Cabral, Jr. , Stephen M. Rossnagel , Kenneth P. Rodbell
发明人： Paul R. Besser , Christian Lavoie , Cyril Cabral, Jr. , Stephen M. Rossnagel , Kenneth P. Rodbell
IPC分类号： H01L21/477
CPC分类号： H01L21/76889 , H01L21/76846 , H01L21/76855 , H01L21/76879 , H01L21/76883 , H01L23/485 , H01L23/5226 , H01L23/53271 , H01L2924/0002 , H01L2924/00
摘要： A method for forming an interconnect structure includes forming a dielectric layer above a first layer having a conductive region defined therein. An opening is defined in the dielectric layer to expose at least a portion of the conductive region. A metal silicide is formed in the opening to define the interconnect structure. A semiconductor device includes a first layer having a conductive region defined therein, a dielectric layer formed above the first layer, and a metal silicide interconnect structure extending through the dielectric layer to communicate with the conductive region.
摘要翻译： 形成互连结构的方法包括在其中限定有导电区域的第一层之上形成介电层。 在电介质层中限定开口以暴露导电区域的至少一部分。 在开口中形成金属硅化物以限定互连结构。 半导体器件包括其中限定有导电区域的第一层，形成在第一层之上的电介质层和延伸穿过介电层以与导电区域连通的金属硅化物互连结构。
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公开(公告)号：US20090315182A1
公开(公告)日：2009-12-24
申请号：US12145163
申请日：2008-06-24
申请人： Paul R. Besser , Christian Lavoie , Cyril Cabral, JR. , Stephen M. Rossnagel , Kenneth P. Rodbell
发明人： Paul R. Besser , Christian Lavoie , Cyril Cabral, JR. , Stephen M. Rossnagel , Kenneth P. Rodbell
CPC分类号： H01L21/76889 , H01L21/76846 , H01L21/76855 , H01L21/76879 , H01L21/76883 , H01L23/485 , H01L23/5226 , H01L23/53271 , H01L2924/0002 , H01L2924/00
摘要： A method for forming an interconnect structure includes forming a dielectric layer above a first layer having a conductive region defined therein. An opening is defined in the dielectric layer to expose at least a portion of the conductive region. A metal silicide is formed in the opening to define the interconnect structure. A semiconductor device includes a first layer having a conductive region defined therein, a dielectric layer formed above the first layer, and a metal silicide interconnect structure extending through the dielectric layer to communicate with the conductive region.
摘要翻译： 形成互连结构的方法包括在其中限定有导电区域的第一层之上形成介电层。 在电介质层中限定开口以暴露导电区域的至少一部分。 在开口中形成金属硅化物以限定互连结构。 半导体器件包括其中限定有导电区域的第一层，形成在第一层之上的电介质层和延伸穿过介电层以与导电区域连通的金属硅化物互连结构。
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8.发明申请METHOD AND STRUCTURE FOR REDUCING CONTACT RESISTANCE BETWEEN SILICIDE CONTACT AND OVERLYING METALLIZATION 有权减少硅化物接触和金属化之间的接触电阻的方法和结构公开(公告)号：US20080211100A1
公开(公告)日：2008-09-04
申请号：US12122984
申请日：2008-05-19
IPC分类号： H01L21/768 , H01L23/48
CPC分类号： H01L23/485 , H01L21/28518 , H01L21/76877 , H01L21/76883 , H01L23/53209 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： A semiconductor structure in which the contact resistance in the contact opening is reduced as well as a method of forming the same are provided. This is achieved in the present invention by replacing conventional contact metallurgy, such as tungsten, or a metal silicide, such as Ni silicide or Cu silicide, with a metal germanide-containing contact material. The term “metal germanide-containing” is used in the present application to denote a pure metal germanide (i.e., MGe alloy) or a metal germanide that includes Si (i.e., MSiGe alloy).
摘要翻译： 提供了其中接触开口中的接触电阻降低的半导体结构及其形成方法。 这在本发明中通过用含金属锗化物的接触材料代替常规的接触冶金例如钨或金属硅化物，例如硅化镍或硅化铜，来实现。 在本申请中使用的术语“含金属锗”表示纯金属锗（即MGe合金）或包含Si（即，MSiGe合金）的金属锗化物。
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9.发明授权Method and structure for reducing contact resistance between silicide contact and overlying metallization 有权用于降低硅化物接触和上覆金属化之间的接触电阻的方法和结构公开(公告)号：US07491643B2
公开(公告)日：2009-02-17
申请号：US11440202
申请日：2006-05-24
IPC分类号： H01L21/4763
CPC分类号： H01L23/485 , H01L21/28518 , H01L21/76877 , H01L21/76883 , H01L23/53209 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： A semiconductor structure in which the contact resistance in the contact opening is reduced as well as a method of forming the same are provided. This is achieved in the present invention by replacing conventional contact metallurgy, such as tungsten, or a metal silicide, such as Ni silicide or Cu silicide, with a metal germanide-containing contact material. The term “metal germanide-containing” is used in the present application to denote a pure metal germanide (i.e., MGe alloy) or a metal germanide that includes Si (i.e., MSiGe alloy).
摘要翻译： 提供了其中接触开口中的接触电阻降低的半导体结构及其形成方法。 这在本发明中通过用含金属锗化物的接触材料代替常规的接触冶金例如钨或金属硅化物，例如硅化镍或硅化铜，来实现。 在本申请中使用的术语“含金属锗”表示纯金属锗（即MGe合金）或包含Si（即，MSiGe合金）的金属锗化物。
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10.发明授权Method and structure for reducing contact resistance between silicide contact and overlying metallization 有权用于降低硅化物接触和上覆金属化之间的接触电阻的方法和结构公开(公告)号：US07923838B2
公开(公告)日：2011-04-12
申请号：US12122984
申请日：2008-05-19
IPC分类号： H01L21/4763
CPC分类号： H01L23/485 , H01L21/28518 , H01L21/76877 , H01L21/76883 , H01L23/53209 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： A semiconductor structure in which the contact resistance in the contact opening is reduced as well as a method of forming the same are provided. This is achieved in the present invention by replacing conventional contact metallurgy, such as tungsten, or a metal silicide, such as Ni silicide or Cu silicide, with a metal germanide-containing contact material. The term “metal germanide-containing” is used in the present application to denote a pure metal germanide (i.e., MGe alloy) or a metal germanide that includes Si (i.e., MSiGe alloy).
摘要翻译： 提供了其中接触开口中的接触电阻降低的半导体结构及其形成方法。 这在本发明中通过用含金属锗化物的接触材料代替常规的接触冶金例如钨或金属硅化物，例如硅化镍或硅化铜，来实现。 在本申请中使用的术语“含金属锗”表示纯金属锗（即MGe合金）或包含Si（即，MSiGe合金）的金属锗化物。
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