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1.发明授权Method and structure of forming silicide and diffusion barrier layer with direct deposited film on silicon 有权在硅上直接沉积薄膜形成硅化物和扩散阻挡层的方法和结构公开(公告)号：US08293643B2
公开(公告)日：2012-10-23
申请号：US12819634
申请日：2010-06-21
申请人： Cyril Cabral, Jr. , John M. Cotte , Kathryn C. Fisher , Laura L. Kosbar , Christian Lavoie , Zhu Liu , Kenneth P. Rodbell , Xiaoyan Shao
发明人： Cyril Cabral, Jr. , John M. Cotte , Kathryn C. Fisher , Laura L. Kosbar , Christian Lavoie , Zhu Liu , Kenneth P. Rodbell , Xiaoyan Shao
IPC分类号： H01L21/477
CPC分类号： H01L21/28518 , H01L21/76841 , H01L23/53238 , H01L31/022408 , H01L31/022425 , H01L2924/0002 , Y02E10/50 , H01L2924/00
摘要： A semiconductor device or a photovoltaic cell having a contact structure, which includes a silicon (Si) substrate; a metal alloy layer deposited on the silicon substrate; a metal silicide layer and a diffusion layer formed simultaneously from thermal annealing the metal alloy layer; and a metal layer deposited on the metal silicide and barrier layers.
摘要翻译： 具有接触结构的半导体器件或光电池，其包括硅（Si）衬底; 沉积在硅衬底上的金属合金层; 金属硅化物层和由金属合金层热退火同时形成的扩散层; 以及沉积在金属硅化物和阻挡层上的金属层。
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2.发明申请METHOD AND STRUCTURE OF FORMING SILICIDE AND DIFFUSION BARRIER LAYER WITH DIRECT DEPOSITED FILM ON SI 审中-公开形成硅胶和扩散阻挡层的方法和结构与直接沉积膜在SI公开(公告)号：US20130001784A1
公开(公告)日：2013-01-03
申请号：US13611363
申请日：2012-09-12
申请人： Cyril Cabral, JR. , John M. Cotte , Kathryn C. Fisher , Laura L. Kosbar , Christian Lavoie , Zhu Liu , Kenneth P. Rodbell , Xiaoyan Shao
发明人： Cyril Cabral, JR. , John M. Cotte , Kathryn C. Fisher , Laura L. Kosbar , Christian Lavoie , Zhu Liu , Kenneth P. Rodbell , Xiaoyan Shao
IPC分类号： H01L23/48
CPC分类号： H01L21/28518 , H01L21/76841 , H01L23/53238 , H01L31/022408 , H01L31/022425 , H01L2924/0002 , Y02E10/50 , H01L2924/00
摘要： A semiconductor device or a photovoltaic cell having a contact structure, which includes a silicon (Si) substrate; a metal alloy layer deposited on the silicon substrate; a metal silicide layer and a diffusion layer formed simultaneously from thermal annealing the metal alloy layer; and a metal layer deposited on the metal silicide and barrier layers.
摘要翻译： 具有接触结构的半导体器件或光电池，其包括硅（Si）衬底; 沉积在硅衬底上的金属合金层; 金属硅化物层和由金属合金层热退火同时形成的扩散层; 以及沉积在金属硅化物和阻挡层上的金属层。
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3.发明申请Method and Structure of Forming Silicide and Diffusion Barrier Layer With Direct Deposited Film on Silicon 有权在硅上形成具有直接沉积膜的硅化物和扩散阻挡层的方法和结构公开(公告)号：US20110309508A1
公开(公告)日：2011-12-22
申请号：US12819634
申请日：2010-06-21
申请人： Cyril Cabral, JR. , John M. Cotte , Kathryn C. Fisher , Laura L. Kosbar , Christian Lavoie , Zhu Liu , Kenneth P. Rodbell , Xiaoyan Shao
发明人： Cyril Cabral, JR. , John M. Cotte , Kathryn C. Fisher , Laura L. Kosbar , Christian Lavoie , Zhu Liu , Kenneth P. Rodbell , Xiaoyan Shao
IPC分类号： H01L23/485 , H01L21/768
CPC分类号： H01L21/28518 , H01L21/76841 , H01L23/53238 , H01L31/022408 , H01L31/022425 , H01L2924/0002 , Y02E10/50 , H01L2924/00
摘要： A semiconductor device or a photovoltaic cell having a contact structure, which includes a silicon (Si) substrate; a metal alloy layer deposited on the silicon substrate; a metal silicide layer and a diffusion layer formed simultaneously from thermal annealing the metal alloy layer; and a metal layer deposited on the metal silicide and barrier layers.
摘要翻译： 具有接触结构的半导体器件或光电池，其包括硅（Si）衬底; 沉积在硅衬底上的金属合金层; 金属硅化物层和由金属合金层热退火同时形成的扩散层; 以及沉积在金属硅化物和阻挡层上的金属层。
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4.发明授权Method to electrodeposit nickel on silicon for forming controllable nickel silicide 有权在镍上电沉积镍以形成可控硅化镍的方法公开(公告)号：US08492899B2
公开(公告)日：2013-07-23
申请号：US12904597
申请日：2010-10-14
申请人： Cyril Cabral, Jr. , John M. Cotte , Kathryn C. Fisher , Laura L. Kosbar , Christian Lavoie , Zhu Liu , Xiaoyan Shao
发明人： Cyril Cabral, Jr. , John M. Cotte , Kathryn C. Fisher , Laura L. Kosbar , Christian Lavoie , Zhu Liu , Xiaoyan Shao
CPC分类号： H01L21/324 , H01L21/28518 , H01L21/2885 , H01L31/022425 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： The present disclosure relates to an improved method of providing a Ni silicide metal contact on a silicon surface by electrodepositing a Ni film on a silicon substrate. The improved method results in a controllable silicide formation wherein the silicide has a uniform thickness. The metal contacts may be incorporated in, for example, CMOS devices, MEM (micro-electro-mechanical) devices, and photovoltaic cells.
摘要翻译： 本公开涉及通过在硅衬底上电沉积Ni膜而在硅表面上提供Ni硅化物金属接触的改进方法。 改进的方法导致可控硅化物形成，其中硅化物具有均匀的厚度。 金属触点可以结合在例如CMOS器件，MEM（微电机械）器件和光伏电池中。
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公开(公告)号：US20120009771A1
公开(公告)日：2012-01-12
申请号：US12833272
申请日：2010-07-09
申请人： Cyril Cabral, JR. , John M. Cotte , Dinesh R. Koli , Laura L. Kosbar , Mahadevaiyer Krishnan , Christian Lavoie , Stephen M. Rossnagel , Zhen Zhang
发明人： Cyril Cabral, JR. , John M. Cotte , Dinesh R. Koli , Laura L. Kosbar , Mahadevaiyer Krishnan , Christian Lavoie , Stephen M. Rossnagel , Zhen Zhang
IPC分类号： H01L21/3205
CPC分类号： H01L21/28512 , H01L21/28518 , H01L29/456
摘要： A method for formation of a segregated interfacial dopant layer at a junction between a semiconductor material and a silicide layer includes depositing a doped metal layer over the semiconductor material; annealing the doped metal layer and the semiconductor material, wherein the anneal causes a portion of the doped metal layer and a portion of the semiconductor material to react to form the silicide layer on the semiconductor material, and wherein the anneal further causes the segregated interfacial dopant layer to form between the semiconductor material and the silicide layer, the segregated interfacial dopant layer comprising dopants from the doped metal layer; and removing an unreacted portion of the doped metal layer from the silicide layer.
摘要翻译： 在半导体材料和硅化物层之间的结处形成分离的界面掺杂剂层的方法包括在半导体材料上沉积掺杂的金属层; 退火所述掺杂金属层和所述半导体材料，其中所述退火使所述掺杂金属层的一部分和所述半导体材料的一部分反应以在所述半导体材料上形成所述硅化物层，并且其中所述退火还导致所述分离的界面掺杂剂 层，以形成在半导体材料和硅化物层之间，分离的界面掺杂剂层包含来自掺杂金属层的掺杂剂; 以及从所述硅化物层去除所述掺杂金属层的未反应部分。
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6.发明授权公开(公告)号：US08604337B2
公开(公告)日：2013-12-10
申请号：US13604230
申请日：2012-09-05
IPC分类号： H01L31/0236
CPC分类号： H01L31/02168 , H01L31/022425 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method to determine the cleanness of a semiconductor substrate and the quantity/density of pin holes that may exist within a patterned antireflective coating (ARC) is provided. Electroplating is employed to monitor the changes in the porosity of the ARC caused by the pin holes during solar cell manufacturing. In particular, electroplating a metal or metal alloy to form a metallic grid on an exposed front side surface of a substrate also fills the pin holes. The quantity/density of metallic filled pin holes (and hence the number of pin holes) in the patterned ARC can then be determined.
摘要翻译： 提供了确定半导体衬底的清洁度的方法以及可能存在于图案化抗反射涂层（ARC）内的针孔的数量/密度。 使用电镀来监测由太阳能电池制造过程中的针孔引起的ARC孔隙度的变化。 特别地，在基板的暴露的前侧表面上电镀金属或金属合金以形成金属网格也填充针孔。 然后可以确定图案化的ARC中的金属填充针孔的数量/密度（以及因此的孔的数量）。
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7.发明申请METHOD TO EVALUATE EFFECTIVENESS OF SUBSTRATE CLEANNESS AND QUANTITY OF PIN HOLES IN AN ANTIREFLECTIVE COATING OF A SOLAR CELL 有权用于评估太阳能电池的抗反射涂层中底物清洁度和针孔数量的有效性的方法公开(公告)号：US20120325316A1
公开(公告)日：2012-12-27
申请号：US13604230
申请日：2012-09-05
IPC分类号： H01L31/0232
CPC分类号： H01L31/02168 , H01L31/022425 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method to determine the cleanness of a semiconductor substrate and the quantity/density of pin holes that may exist within a patterned antireflective coating (ARC) is provided. Electroplating is employed to monitor the changes in the porosity of the ARC caused by the pin holes during solar cell manufacturing. In particular, electroplating a metal or metal alloy to form a metallic grid on an exposed front side surface of a substrate also fills the pin holes. The quantity/density of metallic filled pin holes (and hence the number of pin holes) in the patterned ARC can then be determined.
摘要翻译： 提供了确定半导体衬底的清洁度的方法以及可能存在于图案化抗反射涂层（ARC）内的针孔的数量/密度。 使用电镀来监测由太阳能电池制造过程中的针孔引起的ARC孔隙度的变化。 特别地，在基板的暴露的前侧表面上电镀金属或金属合金以形成金属网格也填充针孔。 然后可以确定图案化的ARC中的金属填充针孔的数量/密度（以及因此的孔的数量）。
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公开(公告)号：US20120006396A1
公开(公告)日：2012-01-12
申请号：US12832375
申请日：2010-07-08
IPC分类号： H01L31/0236 , H01L21/66
CPC分类号： H01L31/02168 , H01L31/022425 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method to determine the cleanness of a semiconductor substrate and the quantity/density of pin holes that may exist within a patterned antireflective coating (ARC) is provided. Electroplating is employed to monitor the changes in the porosity of the ARC caused by the pin holes during solar cell manufacturing. In particular, electroplating a metal or metal alloy to form a metallic grid on an exposed front side surface of a substrate also fills the pin holes. The quantity/density of metallic filled pin holes (and hence the number of pin holes) in the patterned ARC can then be determined.
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公开(公告)号：US08519260B2
公开(公告)日：2013-08-27
申请号：US12832375
申请日：2010-07-08
IPC分类号： H01L31/0236
CPC分类号： H01L31/02168 , H01L31/022425 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method to determine the cleanness of a semiconductor substrate and the quantity/density of pin holes that may exist within a patterned antireflective coating (ARC) is provided. Electroplating is employed to monitor the changes in the porosity of the ARC caused by the pin holes during solar cell manufacturing. In particular, electroplating a metal or metal alloy to form a metallic grid on an exposed front side surface of a substrate also fills the pin holes. The quantity/density of metallic filled pin holes (and hence the number of pin holes) in the patterned ARC can then be determined.
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公开(公告)号：US08889537B2
公开(公告)日：2014-11-18
申请号：US12833272
申请日：2010-07-09
申请人： Cryil Cabral, Jr. , John M. Cotte , Dinesh R. Koli , Laura L. Kosbar , Mahadevaiyer Krishnan , Christian Lavoie , Stephen M. Rossnagel , Zhen Zhang
发明人： Cryil Cabral, Jr. , John M. Cotte , Dinesh R. Koli , Laura L. Kosbar , Mahadevaiyer Krishnan , Christian Lavoie , Stephen M. Rossnagel , Zhen Zhang
IPC分类号： H01L21/28 , H01L21/285 , H01L29/45
CPC分类号： H01L21/28512 , H01L21/28518 , H01L29/456
摘要： A method for formation of a segregated interfacial dopant layer at a junction between a semiconductor material and a silicide layer includes depositing a doped metal layer over the semiconductor material; annealing the doped metal layer and the semiconductor material, wherein the anneal causes a portion of the doped metal layer and a portion of the semiconductor material to react to form the silicide layer on the semiconductor material, and wherein the anneal further causes the segregated interfacial dopant layer to form between the semiconductor material and the silicide layer, the segregated interfacial dopant layer comprising dopants from the doped metal layer; and removing an unreacted portion of the doped metal layer from the silicide layer.
摘要翻译： 在半导体材料和硅化物层之间的结处形成分离的界面掺杂剂层的方法包括在半导体材料上沉积掺杂的金属层; 退火所述掺杂金属层和所述半导体材料，其中所述退火使所述掺杂金属层的一部分和所述半导体材料的一部分反应以在所述半导体材料上形成所述硅化物层，并且其中所述退火还导致所述分离的界面掺杂剂 层，以形成在半导体材料和硅化物层之间，分离的界面掺杂剂层包含来自掺杂金属层的掺杂剂; 以及从所述硅化物层去除所述掺杂金属层的未反应部分。
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