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    Dosimeter powered by passive RF absorption
    3.
    发明授权
    Dosimeter powered by passive RF absorption 有权
    剂量计由被动射频吸收提供动力

    公开(公告)号：US08212218B2

    公开(公告)日：2012-07-03

    申请号：US12627076

    申请日：2009-11-30

    申请人： Cyril Cabral, Jr. ,  Michael S. Gordon ,  Steven J. Koester ,  Conal E. Murray ,  Kenneth P. Rodbell ,  Stephen M. Rossnagel ,  Robert L. Wisnieff ,  Jeng-bang Yau

    发明人： Cyril Cabral, Jr. ,  Michael S. Gordon ,  Steven J. Koester ,  Conal E. Murray ,  Kenneth P. Rodbell ,  Stephen M. Rossnagel ,  Robert L. Wisnieff ,  Jeng-bang Yau

    IPC分类号： G01T1/02

    CPC分类号： G01T1/026

    摘要： A system for determining an amount of radiation includes a dosimeter configured to receive the amount of radiation, the dosimeter comprising a circuit having a resonant frequency, such that the resonant frequency of the circuit changes according to the amount of radiation received by the dosimeter, the dosimeter further configured to absorb RF energy at the resonant frequency of the circuit; a radio frequency (RF) transmitter configured to transmit the RF energy at the resonant frequency to the dosimeter; and a receiver configured to determine the resonant frequency of the dosimeter based on the absorbed RF energy, wherein the amount of radiation is determined based on the resonant frequency.

    摘要翻译： 用于确定辐射量的系统包括配置成接收辐射量的剂量计，该剂量计包括具有谐振频率的电路，使得电路的谐振频率根据剂量计接收的辐射量而改变， 剂量计还被配置为吸收电路的谐振频率处的RF能量; 射频（RF）发射器，被配置为以共振频率将所述RF能量传输到所述剂量计; 以及接收器，被配置为基于所吸收的RF能量来确定所述剂量计的谐振频率，其中所述辐射量基于所述谐振频率来确定。

    Dosimeter Powered by Passive RF Absorption
    4.
    发明申请
    Dosimeter Powered by Passive RF Absorption 有权
    剂量计由被动RF吸收

    公开(公告)号：US20110127438A1

    公开(公告)日：2011-06-02

    申请号：US12627076

    申请日：2009-11-30

    申请人： Cyril Cabral, JR. ,  Michael S. Gordon ,  Steven J. Koester ,  Conal E. Murray ,  Kenneth P. Rodbell ,  Stephen M. Rossnagel ,  Robert L. Wisnieff ,  Jeng-bang Yau

    发明人： Cyril Cabral, JR. ,  Michael S. Gordon ,  Steven J. Koester ,  Conal E. Murray ,  Kenneth P. Rodbell ,  Stephen M. Rossnagel ,  Robert L. Wisnieff ,  Jeng-bang Yau

    IPC分类号： G01T1/02 ,  G01T3/00

    CPC分类号： G01T1/026

    摘要： A system for determining an amount of radiation includes a dosimeter configured to receive the amount of radiation, the dosimeter comprising a circuit having a resonant frequency, such that the resonant frequency of the circuit changes according to the amount of radiation received by the dosimeter, the dosimeter further configured to absorb RF energy at the resonant frequency of the circuit; a radio frequency (RF) transmitter configured to transmit the RF energy at the resonant frequency to the dosimeter; and a receiver configured to determine the resonant frequency of the dosimeter based on the absorbed RF energy, wherein the amount of radiation is determined based on the resonant frequency.

    摘要翻译： 用于确定辐射量的系统包括配置成接收辐射量的剂量计，该剂量计包括具有谐振频率的电路，使得电路的谐振频率根据剂量计接收的辐射量而改变， 剂量计还被配置为吸收电路的谐振频率处的RF能量; 射频（RF）发射器，被配置为以共振频率将所述RF能量传输到所述剂量计; 以及接收器，被配置为基于所吸收的RF能量来确定所述剂量计的谐振频率，其中所述辐射量基于所述谐振频率来确定。

    Implantless Dopant Segregation for Silicide Contacts
    5.
    发明申请
    Implantless Dopant Segregation for Silicide Contacts 有权
    用于硅胶接触的无植入物掺杂剂分离

    公开(公告)号：US20120009771A1

    公开(公告)日：2012-01-12

    申请号：US12833272

    申请日：2010-07-09

    申请人： Cyril Cabral, JR. ,  John M. Cotte ,  Dinesh R. Koli ,  Laura L. Kosbar ,  Mahadevaiyer Krishnan ,  Christian Lavoie ,  Stephen M. Rossnagel ,  Zhen Zhang

    发明人： Cyril Cabral, JR. ,  John M. Cotte ,  Dinesh R. Koli ,  Laura L. Kosbar ,  Mahadevaiyer Krishnan ,  Christian Lavoie ,  Stephen M. Rossnagel ,  Zhen Zhang

    IPC分类号： H01L21/3205

    CPC分类号： H01L21/28512 ,  H01L21/28518 ,  H01L29/456

    摘要： A method for formation of a segregated interfacial dopant layer at a junction between a semiconductor material and a silicide layer includes depositing a doped metal layer over the semiconductor material; annealing the doped metal layer and the semiconductor material, wherein the anneal causes a portion of the doped metal layer and a portion of the semiconductor material to react to form the silicide layer on the semiconductor material, and wherein the anneal further causes the segregated interfacial dopant layer to form between the semiconductor material and the silicide layer, the segregated interfacial dopant layer comprising dopants from the doped metal layer; and removing an unreacted portion of the doped metal layer from the silicide layer.

    摘要翻译： 在半导体材料和硅化物层之间的结处形成分离的界面掺杂剂层的方法包括在半导体材料上沉积掺杂的金属层; 退火所述掺杂金属层和所述半导体材料，其中所述退火使所述掺杂金属层的一部分和所述半导体材料的一部分反应以在所述半导体材料上形成所述硅化物层，并且其中所述退火还导致所述分离的界面掺杂剂 层，以形成在半导体材料和硅化物层之间，分离的界面掺杂剂层包含来自掺杂金属层的掺杂剂; 以及从所述硅化物层去除所述掺杂金属层的未反应部分。

    Mobility Enhanced FET Devices
    6.
    发明申请
    Mobility Enhanced FET Devices 审中-公开
    移动增强型FET器件

    公开(公告)号：US20090298244A1

    公开(公告)日：2009-12-03

    申请号：US12537275

    申请日：2009-08-07

    申请人： Bruce B. Doris ,  Cyril Cabral, JR. ,  Elizabeth A. Duch ,  Stephen M. Rossnagel ,  Michelle L. Steen

    发明人： Bruce B. Doris ,  Cyril Cabral, JR. ,  Elizabeth A. Duch ,  Stephen M. Rossnagel ,  Michelle L. Steen

    IPC分类号： H01L21/8238

    CPC分类号： H01L21/823807 ,  H01L21/823842 ,  H01L29/4958 ,  H01L29/7845

    摘要： NFET and PFET devices with separately stressed channel regions, and methods of their fabrication is disclosed. A FET is disclosed which includes a gate, which gate includes a metal in a first state of stress. The FET also includes a channel region hosted in a single crystal Si based material, which channel region is overlaid by the gate and is in a second state of stress. The second state of stress of the channel region is of an opposite sign than the first state of stress of the metal included in the gate. The NFET channel is usually in a tensile state of stress, while the PFET channel is usually in a compressive state of stress. The methods of fabrication include the deposition of metal layers by physical vapor deposition (PVD), in such manner that the layers are in stressed states.

    摘要翻译： 具有单独应力通道区域的NFET和PFET器件及其制造方法。 公开了一种FET，其包括栅极，该栅极包括处于第一应力状态的金属。 FET还包括托管在单晶Si基材料中的沟道区域，该沟道区域被栅极覆盖并处于第二应力状态。 沟道区域的第二应力状态与包括在栅极中的金属的第一应力状态相反。 NFET通道通常处于应力的拉伸状态，而PFET通道通常处于应力的压缩状态。 制造方法包括通过物理气相沉积（PVD）沉积金属层，使得层处于应力状态。

    Atomic layer deposition of metallic contacts, gates and diffusion barriers
    8.
    发明授权
    Atomic layer deposition of metallic contacts, gates and diffusion barriers 有权
    原子层沉积金属触点，门和扩散屏障

    公开(公告)号：US06943097B2

    公开(公告)日：2005-09-13

    申请号：US10643534

    申请日：2003-08-19

    申请人： Cyril Cabral, Jr. ,  Hyungjun Kim ,  Stephen M. Rossnagel

    发明人： Cyril Cabral, Jr. ,  Hyungjun Kim ,  Stephen M. Rossnagel

    IPC分类号： H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/768 ,  H01L29/49

    CPC分类号： H01L21/28088 ,  H01L21/28562 ,  H01L21/32053 ,  H01L21/76841 ,  H01L29/4966 ,  H01L2221/1078

    摘要： The present invention provides metallic films containing a Group IVB or VB metal, silicon and optionally nitrogen by utilizing atomic layer deposition (ALD). In particularly, the present invention provides a low temperature thermal ALD method of forming metallic silicides and a plasma-enhanced atomic layer deposition (PE-ALD) method of forming metallic silicon nitride film. The methods of the present invention are capable of forming metallic films having a thickness of a monolayer or less on the surface of a substrate. The metallic films provided in the present invention can be used for contact metallization, metal gates or as a diffusion barrier.

    摘要翻译： 本发明通过利用原子层沉积（ALD）提供含有IVB族或VB族金属，硅和任选的氮的金属膜。 特别地，本发明提供形成金属硅化物的低温热ALD方法和形成金属氮化硅膜的等离子体增强原子层沉积（PE-ALD）方法。 本发明的方法能够在基材的表面上形成厚度为单层或更薄的金属膜。 本发明中提供的金属膜可用于接触金属化，金属栅极或扩散阻挡层。

    Atomic layer deposition metallic contacts, gates and diffusion barriers
    9.
    发明授权
    Atomic layer deposition metallic contacts, gates and diffusion barriers 有权
    原子层沉积金属触点，栅极和扩散屏障

    公开(公告)号：US07998842B2

    公开(公告)日：2011-08-16

    申请号：US11214211

    申请日：2005-08-29

    申请人： Cyril Cabral, Jr. ,  Hyungjun Kim ,  Stephen M. Rossnagel

    发明人： Cyril Cabral, Jr. ,  Hyungjun Kim ,  Stephen M. Rossnagel

    IPC分类号： H01L21/285

    CPC分类号： H01L21/28088 ,  H01L21/28562 ,  H01L21/32053 ,  H01L21/76841 ,  H01L29/4966 ,  H01L2221/1078

    摘要： The present invention provides metallic films containing a Group IVB or VB metal, silicon and optionally nitrogen by utilizing atomic layer deposition (ALD). In particularly, the present invention provides a low temperature thermal ALD method of forming metallic silicides and a plasma-enhanced atomic layer deposition (PE-ALD) method of forming metallic silicon nitride film. The methods of the present invention are capable of forming metallic films having a thickness of a monolayer or less on the surface of a substrate. The metallic films provided in the present invention can be used for contact metallization, metal gates or as a diffusion barrier.

    摘要翻译： 本发明通过利用原子层沉积（ALD）提供含有IVB族或VB族金属，硅和任选的氮的金属膜。 特别地，本发明提供形成金属硅化物的低温热ALD方法和形成金属氮化硅膜的等离子体增强原子层沉积（PE-ALD）方法。 本发明的方法能够在基材的表面上形成厚度为单层或更薄的金属膜。 本发明中提供的金属膜可用于接触金属化，金属栅极或扩散阻挡层。