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1.发明授权Method and structure of forming silicide and diffusion barrier layer with direct deposited film on silicon 有权在硅上直接沉积薄膜形成硅化物和扩散阻挡层的方法和结构公开(公告)号：US08293643B2
公开(公告)日：2012-10-23
申请号：US12819634
申请日：2010-06-21
申请人： Cyril Cabral, Jr. , John M. Cotte , Kathryn C. Fisher , Laura L. Kosbar , Christian Lavoie , Zhu Liu , Kenneth P. Rodbell , Xiaoyan Shao
发明人： Cyril Cabral, Jr. , John M. Cotte , Kathryn C. Fisher , Laura L. Kosbar , Christian Lavoie , Zhu Liu , Kenneth P. Rodbell , Xiaoyan Shao
IPC分类号： H01L21/477
CPC分类号： H01L21/28518 , H01L21/76841 , H01L23/53238 , H01L31/022408 , H01L31/022425 , H01L2924/0002 , Y02E10/50 , H01L2924/00
摘要： A semiconductor device or a photovoltaic cell having a contact structure, which includes a silicon (Si) substrate; a metal alloy layer deposited on the silicon substrate; a metal silicide layer and a diffusion layer formed simultaneously from thermal annealing the metal alloy layer; and a metal layer deposited on the metal silicide and barrier layers.
摘要翻译： 具有接触结构的半导体器件或光电池，其包括硅（Si）衬底; 沉积在硅衬底上的金属合金层; 金属硅化物层和由金属合金层热退火同时形成的扩散层; 以及沉积在金属硅化物和阻挡层上的金属层。
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2.发明申请METHOD AND STRUCTURE OF FORMING SILICIDE AND DIFFUSION BARRIER LAYER WITH DIRECT DEPOSITED FILM ON SI 审中-公开形成硅胶和扩散阻挡层的方法和结构与直接沉积膜在SI公开(公告)号：US20130001784A1
公开(公告)日：2013-01-03
申请号：US13611363
申请日：2012-09-12
申请人： Cyril Cabral, JR. , John M. Cotte , Kathryn C. Fisher , Laura L. Kosbar , Christian Lavoie , Zhu Liu , Kenneth P. Rodbell , Xiaoyan Shao
发明人： Cyril Cabral, JR. , John M. Cotte , Kathryn C. Fisher , Laura L. Kosbar , Christian Lavoie , Zhu Liu , Kenneth P. Rodbell , Xiaoyan Shao
IPC分类号： H01L23/48
CPC分类号： H01L21/28518 , H01L21/76841 , H01L23/53238 , H01L31/022408 , H01L31/022425 , H01L2924/0002 , Y02E10/50 , H01L2924/00
摘要： A semiconductor device or a photovoltaic cell having a contact structure, which includes a silicon (Si) substrate; a metal alloy layer deposited on the silicon substrate; a metal silicide layer and a diffusion layer formed simultaneously from thermal annealing the metal alloy layer; and a metal layer deposited on the metal silicide and barrier layers.
摘要翻译： 具有接触结构的半导体器件或光电池，其包括硅（Si）衬底; 沉积在硅衬底上的金属合金层; 金属硅化物层和由金属合金层热退火同时形成的扩散层; 以及沉积在金属硅化物和阻挡层上的金属层。
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3.发明申请Method and Structure of Forming Silicide and Diffusion Barrier Layer With Direct Deposited Film on Silicon 有权在硅上形成具有直接沉积膜的硅化物和扩散阻挡层的方法和结构公开(公告)号：US20110309508A1
公开(公告)日：2011-12-22
申请号：US12819634
申请日：2010-06-21
申请人： Cyril Cabral, JR. , John M. Cotte , Kathryn C. Fisher , Laura L. Kosbar , Christian Lavoie , Zhu Liu , Kenneth P. Rodbell , Xiaoyan Shao
发明人： Cyril Cabral, JR. , John M. Cotte , Kathryn C. Fisher , Laura L. Kosbar , Christian Lavoie , Zhu Liu , Kenneth P. Rodbell , Xiaoyan Shao
IPC分类号： H01L23/485 , H01L21/768
CPC分类号： H01L21/28518 , H01L21/76841 , H01L23/53238 , H01L31/022408 , H01L31/022425 , H01L2924/0002 , Y02E10/50 , H01L2924/00
摘要： A semiconductor device or a photovoltaic cell having a contact structure, which includes a silicon (Si) substrate; a metal alloy layer deposited on the silicon substrate; a metal silicide layer and a diffusion layer formed simultaneously from thermal annealing the metal alloy layer; and a metal layer deposited on the metal silicide and barrier layers.
摘要翻译： 具有接触结构的半导体器件或光电池，其包括硅（Si）衬底; 沉积在硅衬底上的金属合金层; 金属硅化物层和由金属合金层热退火同时形成的扩散层; 以及沉积在金属硅化物和阻挡层上的金属层。
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4.发明授权Method to electrodeposit nickel on silicon for forming controllable nickel silicide 有权在镍上电沉积镍以形成可控硅化镍的方法公开(公告)号：US08492899B2
公开(公告)日：2013-07-23
申请号：US12904597
申请日：2010-10-14
申请人： Cyril Cabral, Jr. , John M. Cotte , Kathryn C. Fisher , Laura L. Kosbar , Christian Lavoie , Zhu Liu , Xiaoyan Shao
发明人： Cyril Cabral, Jr. , John M. Cotte , Kathryn C. Fisher , Laura L. Kosbar , Christian Lavoie , Zhu Liu , Xiaoyan Shao
CPC分类号： H01L21/324 , H01L21/28518 , H01L21/2885 , H01L31/022425 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： The present disclosure relates to an improved method of providing a Ni silicide metal contact on a silicon surface by electrodepositing a Ni film on a silicon substrate. The improved method results in a controllable silicide formation wherein the silicide has a uniform thickness. The metal contacts may be incorporated in, for example, CMOS devices, MEM (micro-electro-mechanical) devices, and photovoltaic cells.
摘要翻译： 本公开涉及通过在硅衬底上电沉积Ni膜而在硅表面上提供Ni硅化物金属接触的改进方法。 改进的方法导致可控硅化物形成，其中硅化物具有均匀的厚度。 金属触点可以结合在例如CMOS器件，MEM（微电机械）器件和光伏电池中。
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5.发明授权公开(公告)号：US08604337B2
公开(公告)日：2013-12-10
申请号：US13604230
申请日：2012-09-05
IPC分类号： H01L31/0236
CPC分类号： H01L31/02168 , H01L31/022425 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method to determine the cleanness of a semiconductor substrate and the quantity/density of pin holes that may exist within a patterned antireflective coating (ARC) is provided. Electroplating is employed to monitor the changes in the porosity of the ARC caused by the pin holes during solar cell manufacturing. In particular, electroplating a metal or metal alloy to form a metallic grid on an exposed front side surface of a substrate also fills the pin holes. The quantity/density of metallic filled pin holes (and hence the number of pin holes) in the patterned ARC can then be determined.
摘要翻译： 提供了确定半导体衬底的清洁度的方法以及可能存在于图案化抗反射涂层（ARC）内的针孔的数量/密度。 使用电镀来监测由太阳能电池制造过程中的针孔引起的ARC孔隙度的变化。 特别地，在基板的暴露的前侧表面上电镀金属或金属合金以形成金属网格也填充针孔。 然后可以确定图案化的ARC中的金属填充针孔的数量/密度（以及因此的孔的数量）。
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公开(公告)号：US20120006396A1
公开(公告)日：2012-01-12
申请号：US12832375
申请日：2010-07-08
IPC分类号： H01L31/0236 , H01L21/66
CPC分类号： H01L31/02168 , H01L31/022425 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method to determine the cleanness of a semiconductor substrate and the quantity/density of pin holes that may exist within a patterned antireflective coating (ARC) is provided. Electroplating is employed to monitor the changes in the porosity of the ARC caused by the pin holes during solar cell manufacturing. In particular, electroplating a metal or metal alloy to form a metallic grid on an exposed front side surface of a substrate also fills the pin holes. The quantity/density of metallic filled pin holes (and hence the number of pin holes) in the patterned ARC can then be determined.
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7.发明申请METHOD TO EVALUATE EFFECTIVENESS OF SUBSTRATE CLEANNESS AND QUANTITY OF PIN HOLES IN AN ANTIREFLECTIVE COATING OF A SOLAR CELL 有权用于评估太阳能电池的抗反射涂层中底物清洁度和针孔数量的有效性的方法公开(公告)号：US20120325316A1
公开(公告)日：2012-12-27
申请号：US13604230
申请日：2012-09-05
IPC分类号： H01L31/0232
CPC分类号： H01L31/02168 , H01L31/022425 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method to determine the cleanness of a semiconductor substrate and the quantity/density of pin holes that may exist within a patterned antireflective coating (ARC) is provided. Electroplating is employed to monitor the changes in the porosity of the ARC caused by the pin holes during solar cell manufacturing. In particular, electroplating a metal or metal alloy to form a metallic grid on an exposed front side surface of a substrate also fills the pin holes. The quantity/density of metallic filled pin holes (and hence the number of pin holes) in the patterned ARC can then be determined.
摘要翻译： 提供了确定半导体衬底的清洁度的方法以及可能存在于图案化抗反射涂层（ARC）内的针孔的数量/密度。 使用电镀来监测由太阳能电池制造过程中的针孔引起的ARC孔隙度的变化。 特别地，在基板的暴露的前侧表面上电镀金属或金属合金以形成金属网格也填充针孔。 然后可以确定图案化的ARC中的金属填充针孔的数量/密度（以及因此的孔的数量）。
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公开(公告)号：US08519260B2
公开(公告)日：2013-08-27
申请号：US12832375
申请日：2010-07-08
IPC分类号： H01L31/0236
CPC分类号： H01L31/02168 , H01L31/022425 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method to determine the cleanness of a semiconductor substrate and the quantity/density of pin holes that may exist within a patterned antireflective coating (ARC) is provided. Electroplating is employed to monitor the changes in the porosity of the ARC caused by the pin holes during solar cell manufacturing. In particular, electroplating a metal or metal alloy to form a metallic grid on an exposed front side surface of a substrate also fills the pin holes. The quantity/density of metallic filled pin holes (and hence the number of pin holes) in the patterned ARC can then be determined.
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公开(公告)号：US20110253545A1
公开(公告)日：2011-10-20
申请号：US12762665
申请日：2010-04-19
申请人： Laura L. Kosbar , Xiaoyan Shao
发明人： Laura L. Kosbar , Xiaoyan Shao
摘要： The present disclosure provides a method of electrodeposition of a metal or metal alloy on at least one surface of a semiconductor material. The method of the present invention provides full coverage of an electrodeposited metallic film on the at least one surface of the semiconductor material. The method of the present disclosure includes providing a semiconductor material. A metallic film is applied to at least one surface of the semiconductor material by an electrodeposition process. The electrodeposition process employed uses current waveforms that apply a low current density initially, and after a predetermined period of time, the current density is changed to a high current density.
摘要翻译： 本公开提供了一种在半导体材料的至少一个表面上电沉积金属或金属合金的方法。 本发明的方法提供了半导体材料的至少一个表面上的电沉积金属膜的完全覆盖。 本公开的方法包括提供半导体材料。 通过电沉积工艺将金属膜施加到半导体材料的至少一个表面。 使用的电沉积工艺使用最初施加低电流密度的电流波形，并且在预定时间段之后，将电流密度改变为高电流密度。
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公开(公告)号：US08089157B2
公开(公告)日：2012-01-03
申请号：US12967633
申请日：2010-12-14
申请人： Cyril Cabral, Jr. , Hariklia Deligianni , Randolph F. Knarr , Sandra G. Malhotra , Stephen Rossnagel , Xiaoyan Shao , Anna Topol , Philippe M. Vereecken
发明人： Cyril Cabral, Jr. , Hariklia Deligianni , Randolph F. Knarr , Sandra G. Malhotra , Stephen Rossnagel , Xiaoyan Shao , Anna Topol , Philippe M. Vereecken
CPC分类号： H01L23/485 , H01L21/2885 , H01L21/76843 , H01L21/76846 , H01L21/76877 , H01L23/53252 , H01L2924/0002 , H01L2924/00
摘要： A contact metallurgy structure comprising a patterned dielectric layer having vias on a substrate; a silicide layer of cobalt and/or nickel located at the bottom of vias; a contact layer comprising Ti located in vias on top of the silicide layer; a diffusion layer located in vias and on top of the contact layer; a metal fill layer in vias is provided along with a method of fabrication. The metal fill layer comprises at least one member selected from the group consisting of copper, ruthenium, rhodium platinum, palladium, iridium, rhenium, tungsten, gold, silver and osmium and alloys thereof. When the metal fill layer comprises rhodium, the diffusion layer is not required. Optionally a seed layer for the metal fill layer can be employed.
摘要翻译： 一种接触式冶金结构，包括在衬底上具有通孔的图案化介电层; 位于通孔底部的钴和/或镍的硅化物层; 包含位于硅化物层顶部的通孔中的Ti的接触层; 位于接触层的通孔和顶部的扩散层; 提供通孔中的金属填充层以及制造方法。 金属填充层包括选自铜，钌，铑铂，钯，铱，铼，钨，金，银和锇中的至少一种及其合金。 当金属填充层包含铑时，不需要扩散层。 任选地，可以使用用于金属填充层的种子层。
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