摘要:
A method of analyzing a claim in a patent or patent application is disclosed, comprising retrieving a patent claim which has been rendered into a format parsable by a computer program into a computer memory; parsing the claim into a set of discrete elements; categorizing each element in the set of elements according to a predetermined rule; and storing a set of categorized elements in a data store. A parsing program executable in a computer may be used to parse the patent claim and, optionally, to identify one or more keyword sets in the parsed claim. A rating program may also be used to assign a rating weight to each categorized element. It is emphasized that this abstract is provided to comply with the rules requiring an abstract which will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.
摘要:
A computer-based information search method comprises the steps of: receiving a search query, the search query comprising at least one term; receiving a network resource list, the list comprising at least one web site selected from a predetermined web site list; semantically analyzing the search query; and searching the network resource list for a response to the search query using a search engine. A computer-based citation search method comprises the steps of: receiving a search query, the search query comprising an patent identification condition; receiving a list of patent databases; searching the list of patent databases to collect at least one reference patent that cites patents or is cited by patents satisfying the condition of the search query; and producing a citation list, the list comprising at least an owner of the reference patent.
摘要:
A method of managing a project comprises: receiving data representing attributes of a project from a project manager; receiving data identifying attributes of the task; assigning a task to a task-responsible person; automatically providing a notice to the task-responsible person, the notice identifying the assignment of the task; receiving at least one task report from the corresponding task-responsible person; providing the corresponding task-responsible person and the project manager read-write access to the task report; and providing at least one other person read-only access to the task report. A computer-implemented information integration system comprises: a database for receiving a plurality of patent data; the database for receiving a plurality of entity data; the database for receiving a plurality of evidence data; the database associating the patent data, the entity data, and the evidence data to each other and storing the patent data, the entity data, and the evidence data.
摘要:
The present disclosure provides a system and method for storing and accessing information. In one example, the system includes an internal smart agent, an internal knowledge tree connected to the internal smart agent, and an external data source. The internal smart agent is adapted to query the internal knowledge tree prior to accessing the external data source to provide information.
摘要:
A system for generating multiple synthesized clocks having an input terminal for receiving a reference signal, a phase locked loop circuit coupled to the input signal terminal, where the phase locked loop circuit is capable of generating a plurality of output signals that are frequency locked to the reference signal and having a plurality of different phases, a phase rotator coupled to the phase locked loop circuit, where the phase rotator generates an even greater plurality of phases.
摘要:
An embodiment of a floating-gate memory cell has a tunnel dielectric layer formed overlying a semiconductor substrate; a drain region formed in a semiconductor substrate adjacent a first side of the tunnel dielectric layer, a source region formed in a semiconductor substrate adjacent a second side of the tunnel dielectric layer, a floating-gate layer formed overlying the tunnel dielectric layer, a control-gate layer formed overlying the floating-gate layer, and an intergate dielectric layer formed interposed between the floating-gate layer and the control gate layer. The control-gate layer includes a silicide layer in contact with an underlying polysilicon layer. There is no interposing dielectric layer between the control-gate layer and an overlying bulk insulator layer, and a width of the silicide layer is substantially equal to a width of the polysilicon layer.
摘要:
Methods and apparatus are described to facilitate forming memory devices with low resistance polysilicon local interconnects that allow a smaller array feature size and therefore facilitate forming arrays of a denser array format. Embodiments of the present invention are formed utilizing a wet etch process that has a high selectivity, allowing the deposition and etching of polysilicon local interconnects to source regions of array transistors. By providing for a local interconnect of polysilicon, a smaller source region and/or drain region can also be utilized, further decreasing the required word line spacing. Low resistance polysilicon local source interconnects can also couple to an increased number of memory cells, thereby reducing the number of contacts made to an array ground.
摘要:
A method for forming a flash memory device having a local interconnect connecting source regions of a plurality of transistors within a sector allows for a highly selective wet etch of a dielectric region overlying the source region. An embodiment of the method comprises the use of an etch-resistant layer covering various features such as any gate oxide remaining over the source region, spacers along sidewalls of the transistor stacks, and a capping layer of the transistor. An in-process semiconductor device resulting from the inventive method is also disclosed.
摘要:
Flash memory supporting methods for erasing memory cells using a decrease in magnitude of a source voltage of a first polarity to increase the magnitude of a control gate voltage of a second polarity during an erase period.
摘要:
Methods of fabrication and flash memory structures eliminate process steps while increasing capacitive coupling between floating gates and control gates of the memory cells. A thick floating gate is deposited early in the process, and a height and width of the floating gate is controlled with deposition and etching or the use of spacers.