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    Magnetoresistive sensor capable of narrowing gap and track width
    2.
    发明授权
    Magnetoresistive sensor capable of narrowing gap and track width 失效
    磁阻传感器能够缩小间隙和轨道宽度

    公开(公告)号：US06844998B2

    公开(公告)日：2005-01-18

    申请号：US10103359

    申请日：2002-03-20

    申请人： Daigo Aoki ,  Kenji Honda ,  Kiyoshi Sato ,  Naoya Hasegawa ,  Yukie Nakazawa

    发明人： Daigo Aoki ,  Kenji Honda ,  Kiyoshi Sato ,  Naoya Hasegawa ,  Yukie Nakazawa

    IPC分类号： G01R33/09 ,  G11B5/39 ,  H01L43/08

    CPC分类号： G11B5/3903 ,  H01L43/08

    摘要： Assuming that a distance between an upper shield layer and a lower shield layer in an area, which overlaps only a first electrode layer, but does not overlap a second electrode layer, is G1s, and a distance between the upper shield layer and the lower shield layer at a position in alignment with a center of a multilayered film is G1c, a difference in value between G1s and G1c is set to be not larger than a predetermined value, whereby an effective track (read) width can be reduced.

    摘要翻译： 假设在仅与第一电极层重叠但不与第二电极层重叠的区域中的上屏蔽层和下屏蔽层之间的距离为G1s，并且上屏蔽层和下屏蔽层之间的距离 在与多层膜的中心对准的位置处的层是G1c，G1s和G1c之间的值之差被设定为不大于预定值，从而可以减少有效的轨迹（读取）宽度。

    Magnetoresistive-effect device and method for manufacturing the same
    3.
    发明授权
    Magnetoresistive-effect device and method for manufacturing the same 失效
    磁阻效应器件及其制造方法

    公开(公告)号：US06791804B2

    公开(公告)日：2004-09-14

    申请号：US10337479

    申请日：2003-01-06

    申请人： Daigo Aoki ,  Naoya Hasegawa ,  Kenji Honda ,  Yoshihiko Kakihara

    发明人： Daigo Aoki ,  Naoya Hasegawa ,  Kenji Honda ,  Yoshihiko Kakihara

    IPC分类号： G11B539

    CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3903 ,  G11B2005/3996 ,  H01L43/12 ,  Y10T29/49044

    摘要： A magnetoresistive-effect device includes a multilayer film, hard bias layers arranged on both sides of the multilayer film, and electrode layers respectively deposited on the hard bias layers. The electrode layers are formed, extending over the multilayer film. Under the influence of the hard bias layers arranged on both sides of the multilayer, the multilayer film, forming the magnetoresistive-effect device, has, on the end portions thereof, insensitive regions which exhibit no substantial magnetoresistive effect. The insensitive region merely increases a direct current resistance. By extending the electrode layers over the insensitive regions of the multilayer film, a sense current is effectively flown from the electrode layer into the multilayer film. With a junction area between the electrode layer and the multilayer film increased, the direct current resistance is reduced, while the reproduction characteristics of the device are thus improved.

    摘要翻译： 磁阻效应器件包括多层膜，布置在多层膜两侧的硬偏置层以及分别沉积在硬偏压层上的电极层。 在多层膜上形成电极层。 在布置在多层的两侧的硬偏置层的影响下，形成磁阻效应器件的多层膜在其端部上具有不显着的磁阻效应的不敏感区域。 不敏感区域仅增加直流电阻。 通过将电极层延伸到多层膜的不敏感区域上，感测电流有效地从电极层流入多层膜。 在电极层和多层膜之间的接合区域增加的同时，直流电阻降低，同时改善了器件的再现特性。

    Magnetoresistive-effect device with extended AFM layer and method for manufacturing the same
    4.
    发明授权
    Magnetoresistive-effect device with extended AFM layer and method for manufacturing the same 失效
    具有扩展AFM层的磁阻效应器件及其制造方法

    公开(公告)号：US06690554B2

    公开(公告)日：2004-02-10

    申请号：US10337188

    申请日：2003-01-06

    申请人： Daigo Aoki ,  Naoya Hasegawa ,  Kenji Honda ,  Kiyoshi Sato ,  Yoshihiko Kakihara

    发明人： Daigo Aoki ,  Naoya Hasegawa ,  Kenji Honda ,  Kiyoshi Sato ,  Yoshihiko Kakihara

    IPC分类号： G11B539

    CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3903 ,  G11B2005/3996 ,  H01L43/12 ,  Y10T29/49044

    摘要： A magnetoresistive-effect device includes a multilayer film, hard bias layers arranged on both sides of the multilayer film, and electrode layers respectively deposited on the hard bias layers. The electrode layers are formed, extending over the multilayer film. Under the influence of the hard bias layers arranged on both sides of the multilayer, the multilayer film, forming the magnetoresistive-effect device, has, on the end portions thereof, insensitive regions which exhibit no substantial magnetoresistive effect. The insensitive region merely increases a direct current resistance. By extending the electrode layers over the insensitive regions of the multilayer film, a sense current is effectively flown from the electrode layer into the multilayer film. With a junction area between the electrode layer and the multilayer film increased, the direct current resistance is reduced, while the reproduction characteristics of the device are thus improved.

    摘要翻译： 磁阻效应器件包括多层膜，布置在多层膜两侧的硬偏置层以及分别沉积在硬偏压层上的电极层。 在多层膜上形成电极层。 在布置在多层的两侧的硬偏置层的影响下，形成磁阻效应器件的多层膜在其端部上具有不显着的磁阻效应的不敏感区域。 不敏感区域仅增加直流电阻。 通过将电极层延伸到多层膜的不敏感区域上，感测电流有效地从电极层流入多层膜。 在电极层和多层膜之间的接合区域增加的同时，直流电阻降低，同时改善了器件的再现特性。

    MAGNETIC HEAD STRUCTURE AND ITS MANUFACTURING METHOD
    6.
    发明申请
    MAGNETIC HEAD STRUCTURE AND ITS MANUFACTURING METHOD 有权
    磁头结构及其制造方法

    公开(公告)号：US20080106820A1

    公开(公告)日：2008-05-08

    申请号：US11925104

    申请日：2007-10-26

    申请人： Daigo Aoki ,  Kenji Honda

    发明人： Daigo Aoki ,  Kenji Honda

    IPC分类号： G11B5/127

    CPC分类号： G11B5/3133 ,  G11B5/3166 ,  G11B5/3169 ,  G11B5/3173

    摘要： In a magnetic head structure that forms a medium facing surface of a head element unit by polishing processing, a height monitor that is exposed in the vicinity of the head element unit during the polishing processing to index the height of the head element unit is provided in a planar rectangular shape.

    摘要翻译： 在通过抛光处理形成头元件单元的与介质相对表面的磁头结构中，在抛光处理期间暴露在头元件单元附近的高度监视器被设置在头元件单元的高度索引中 平面矩形。

    CPP-TYPE THIN-FILM MAGNETIC HEAD AND MANUFACTURING METHOD THEREOF
    7.
    发明申请
    CPP-TYPE THIN-FILM MAGNETIC HEAD AND MANUFACTURING METHOD THEREOF 审中-公开
    CPP型薄膜磁头及其制造方法

    公开(公告)号：US20070115595A1

    公开(公告)日：2007-05-24

    申请号：US11558345

    申请日：2006-11-09

    申请人： Kenji Honda ,  Naohiro Ishibashi ,  Daigo Aoki ,  Yasuo Hayakawa ,  Yoshihiro Nishiyama ,  Toshihiro Kobayashi

    发明人： Kenji Honda ,  Naohiro Ishibashi ,  Daigo Aoki ,  Yasuo Hayakawa ,  Yoshihiro Nishiyama ,  Toshihiro Kobayashi

    IPC分类号： G11B5/33 ,  G11B5/127

    CPC分类号： G01R33/093 ,  B82Y25/00 ,  G11B5/3912 ,  G11B5/398

    摘要： a CCP-type thin-film magnetic head and a manufacturing method thereof are provided. The CCP-type thin-film magnetic head includes a thin-film magnetic head element formed between the upper shield layer and the lower shield layer, and a side fill gap layer securing the insulating property, which is formed from both end faces of the thin-film magnetic head element, wherein a top surface of the lower shield layer is formed in a non-flat surface having a convex portion disposed at a center in a track width direction and a concave portion disposed at both sides in a track width direction of the convex portion, the thin-film magnetic head element is formed on the convex portion, and an buried gap layer contacting the side fill gap layer is formed in the concave portion.

    摘要翻译： 提供了一种CCP型薄膜磁头及其制造方法。 CCP型薄膜磁头包括形成在上屏蔽层和下屏蔽层之间的薄膜磁头元件，以及确保绝缘性能的侧填充间隙层，其由薄的两个端面形成 所述下屏蔽层的上表面形成在具有设置在轨道宽度方向的中心的凸部的非平坦面和设置在轨道宽度方向的两侧的凹部 凸部，薄膜磁头元件形成在凸部上，并且在凹部中形成与侧填充间隙层接触的掩埋间隙层。

    Magnetoresistive-effect device with a magnetic coupling junction
    10.
    发明授权
    Magnetoresistive-effect device with a magnetic coupling junction 失效
    具有磁耦合结的磁阻效应器件

    公开(公告)号：US06587315B1

    公开(公告)日：2003-07-01

    申请号：US09487691

    申请日：2000-01-19

    申请人： Daigo Aoki ,  Naoya Hasegawa ,  Kenji Honda ,  Kiyoshi Sato ,  Yoshihiko Kakihara

    发明人： Daigo Aoki ,  Naoya Hasegawa ,  Kenji Honda ,  Kiyoshi Sato ,  Yoshihiko Kakihara

    IPC分类号： G11B539

    CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3903 ,  G11B2005/3996 ,  H01L43/12 ,  Y10T29/49044

    摘要： A magnetoresistive-effect device includes a multilayer film, hard bias layers arranged on both sides of the multilayer film, and electrode layers respectively deposited on the hard bias layers. The electrode layers are formed, extending over the multilayer film. Under the influence of the hard bias layers arranged on both sides of the multilayer, the multilayer film, forming the magnetoresistive-effect device, has, on the end portions thereof, insensitive regions which exhibit no substantial magnetoresistive effect. The insensitive region merely increases a direct current resistance. By extending the electrode layers over the insensitive regions of the multilayer film, a sense current is effectively flown from the electrode layer into the multilayer film. With a junction area between the electrode layer and the multilayer film increased, the direct current resistance is reduced, while the reproduction characteristics of the device are thus improved.

    摘要翻译： 磁阻效应器件包括多层膜，布置在多层膜两侧的硬偏置层以及分别沉积在硬偏压层上的电极层。 在多层膜上形成电极层。 在布置在多层的两侧的硬偏置层的影响下，形成磁阻效应器件的多层膜在其端部上具有不显着的磁阻效应的不敏感区域。 不敏感区域仅增加直流电阻。 通过将电极层延伸到多层膜的不敏感区域上，感测电流有效地从电极层流入多层膜。 在电极层和多层膜之间的接合区域增加的同时，直流电阻降低，同时改善了器件的再现特性。