公开(公告)号：US06587315B1

公开(公告)日：2003-07-01

申请号：US09487691

申请日：2000-01-19

申请人： Daigo Aoki ,  Naoya Hasegawa ,  Kenji Honda ,  Kiyoshi Sato ,  Yoshihiko Kakihara

发明人： Daigo Aoki ,  Naoya Hasegawa ,  Kenji Honda ,  Kiyoshi Sato ,  Yoshihiko Kakihara

IPC分类号： G11B539

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3903 ,  G11B2005/3996 ,  H01L43/12 ,  Y10T29/49044

摘要： A magnetoresistive-effect device includes a multilayer film, hard bias layers arranged on both sides of the multilayer film, and electrode layers respectively deposited on the hard bias layers. The electrode layers are formed, extending over the multilayer film. Under the influence of the hard bias layers arranged on both sides of the multilayer, the multilayer film, forming the magnetoresistive-effect device, has, on the end portions thereof, insensitive regions which exhibit no substantial magnetoresistive effect. The insensitive region merely increases a direct current resistance. By extending the electrode layers over the insensitive regions of the multilayer film, a sense current is effectively flown from the electrode layer into the multilayer film. With a junction area between the electrode layer and the multilayer film increased, the direct current resistance is reduced, while the reproduction characteristics of the device are thus improved.

摘要翻译： 磁阻效应器件包括多层膜，布置在多层膜两侧的硬偏置层以及分别沉积在硬偏压层上的电极层。 在多层膜上形成电极层。 在布置在多层的两侧的硬偏置层的影响下，形成磁阻效应器件的多层膜在其端部上具有不显着的磁阻效应的不敏感区域。 不敏感区域仅增加直流电阻。 通过将电极层延伸到多层膜的不敏感区域上，感测电流有效地从电极层流入多层膜。 在电极层和多层膜之间的接合区域增加的同时，直流电阻降低，同时改善了器件的再现特性。

公开(公告)号：US06791804B2

公开(公告)日：2004-09-14

申请号：US10337479

申请日：2003-01-06

申请人： Daigo Aoki ,  Naoya Hasegawa ,  Kenji Honda ,  Yoshihiko Kakihara

发明人： Daigo Aoki ,  Naoya Hasegawa ,  Kenji Honda ,  Yoshihiko Kakihara

IPC分类号： G11B539

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3903 ,  G11B2005/3996 ,  H01L43/12 ,  Y10T29/49044

摘要： A magnetoresistive-effect device includes a multilayer film, hard bias layers arranged on both sides of the multilayer film, and electrode layers respectively deposited on the hard bias layers. The electrode layers are formed, extending over the multilayer film. Under the influence of the hard bias layers arranged on both sides of the multilayer, the multilayer film, forming the magnetoresistive-effect device, has, on the end portions thereof, insensitive regions which exhibit no substantial magnetoresistive effect. The insensitive region merely increases a direct current resistance. By extending the electrode layers over the insensitive regions of the multilayer film, a sense current is effectively flown from the electrode layer into the multilayer film. With a junction area between the electrode layer and the multilayer film increased, the direct current resistance is reduced, while the reproduction characteristics of the device are thus improved.

摘要翻译： 磁阻效应器件包括多层膜，布置在多层膜两侧的硬偏置层以及分别沉积在硬偏压层上的电极层。 在多层膜上形成电极层。 在布置在多层的两侧的硬偏置层的影响下，形成磁阻效应器件的多层膜在其端部上具有不显着的磁阻效应的不敏感区域。 不敏感区域仅增加直流电阻。 通过将电极层延伸到多层膜的不敏感区域上，感测电流有效地从电极层流入多层膜。 在电极层和多层膜之间的接合区域增加的同时，直流电阻降低，同时改善了器件的再现特性。

公开(公告)号：US06690554B2

公开(公告)日：2004-02-10

申请号：US10337188

申请日：2003-01-06

申请人： Daigo Aoki ,  Naoya Hasegawa ,  Kenji Honda ,  Kiyoshi Sato ,  Yoshihiko Kakihara

发明人： Daigo Aoki ,  Naoya Hasegawa ,  Kenji Honda ,  Kiyoshi Sato ,  Yoshihiko Kakihara

IPC分类号： G11B539

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3903 ,  G11B2005/3996 ,  H01L43/12 ,  Y10T29/49044

摘要： A magnetoresistive-effect device includes a multilayer film, hard bias layers arranged on both sides of the multilayer film, and electrode layers respectively deposited on the hard bias layers. The electrode layers are formed, extending over the multilayer film. Under the influence of the hard bias layers arranged on both sides of the multilayer, the multilayer film, forming the magnetoresistive-effect device, has, on the end portions thereof, insensitive regions which exhibit no substantial magnetoresistive effect. The insensitive region merely increases a direct current resistance. By extending the electrode layers over the insensitive regions of the multilayer film, a sense current is effectively flown from the electrode layer into the multilayer film. With a junction area between the electrode layer and the multilayer film increased, the direct current resistance is reduced, while the reproduction characteristics of the device are thus improved.

摘要翻译： 磁阻效应器件包括多层膜，布置在多层膜两侧的硬偏置层以及分别沉积在硬偏压层上的电极层。 在多层膜上形成电极层。 在布置在多层的两侧的硬偏置层的影响下，形成磁阻效应器件的多层膜在其端部上具有不显着的磁阻效应的不敏感区域。 不敏感区域仅增加直流电阻。 通过将电极层延伸到多层膜的不敏感区域上，感测电流有效地从电极层流入多层膜。 在电极层和多层膜之间的接合区域增加的同时，直流电阻降低，同时改善了器件的再现特性。

公开(公告)号：US07054115B2

公开(公告)日：2006-05-30

申请号：US09774781

申请日：2001-01-30

申请人： Naoya Hasegawa ,  Kenji Honda ,  Yoshihiko Kakihara

发明人： Naoya Hasegawa ,  Kenji Honda ,  Yoshihiko Kakihara

IPC分类号： G11B5/127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G11B5/3903 ,  G11B2005/3996 ,  H01F10/3268 ,  H01F41/302 ,  H01F41/325 ,  Y10T29/49034 ,  Y10T29/49044

摘要： A spin-valve thin-film magnetic element includes a substrate, a composite formed thereon, and electrode layers formed on both sides of the composite. The composite includes an antiferromagnetic layer, a pinned magnetic layer, a nonmagnetic conductive layer, a free magnetic layer, a mean-free-path-extending layer, and an exchange bias layer. The mean-free-path-extending layer may be a back layer or a mirror reflective layer. The mean-free-path-extending layer extends the mean free path of spin-up conduction electrons in the spin-valve thin-film magnetic element. This spin-valve thin-film magnetic element meets trends toward a narrower track width.

摘要翻译： 自旋阀薄膜磁性元件包括基板，形成在其上的复合物，以及形成在复合体两侧的电极层。 复合材料包括反铁磁性层，钉扎磁性层，非磁性导电层，自由磁性层，平均自由路径延伸层和交换偏置层。 平均自由路径延伸层可以是背层或镜面反射层。 平均自由路径延伸层延长了自旋阀薄膜磁性元件中自旋向上传导电子的平均自由程。 该自旋阀薄膜磁性元件满足趋向于较窄轨道宽度的趋势。

公开(公告)号：US06756135B2

公开(公告)日：2004-06-29

申请号：US09879381

申请日：2001-06-12

申请人： Naoya Hasegawa ,  Kenji Honda ,  Yoshihiko Kakihara

发明人： Naoya Hasegawa ,  Kenji Honda ,  Yoshihiko Kakihara

IPC分类号： G11B566

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/012 ,  G11B5/3143 ,  G11B5/3903 ,  G11B5/3967 ,  G11B2005/3996 ,  H01F10/1936 ,  H01F10/3268 ,  H01F41/325 ,  Y10S428/90 ,  Y10T428/1143 ,  Y10T428/1186 ,  Y10T428/12465 ,  Y10T428/1259

摘要： A spin valve thin-film magnetic element has an improved rate of change in resistance (&Dgr;R/R) that can be used for a narrower magnetic track. The spin valve thin-film magnetic element has a laminate that include an antiferromagnetic layer, a pinned magnetic layer, a non-magnetic conductive layer, a free magnetic layer, a back layer, specular-reflection layers and a pair of electrode layers formed at the two sides of the laminate. Preferably the specular reflection layer includes an oxide, such as &agr;-Fe2O3 or NiO, or a half-metal Heusler alloy, such as NiMnSb or PtMnSb.

摘要翻译： 自旋阀薄膜磁性元件具有可用于较窄磁道的电阻变化率（DeltaR / R）。 自旋阀薄膜磁性元件具有包括反铁磁层，钉扎磁性层，非磁性导电层，自由磁性层，背层，镜面反射层和形成在 层压板的两面。 优选地，镜面反射层包括氧化物，例如α-Fe 2 O 3或NiO，或半金属Heusler合金，例如NiMnSb或PtMnSb。

公开(公告)号：US06538858B1

公开(公告)日：2003-03-25

申请号：US09491397

申请日：2000-01-25

申请人： Naoya Hasegawa ,  Kenji Honda ,  Yoshihiko Kakihara

发明人： Naoya Hasegawa ,  Kenji Honda ,  Yoshihiko Kakihara

IPC分类号： G11B539

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  H01F10/3218 ,  H01F10/324 ,  H01F10/3268 ,  H01F41/325

摘要： In the present invention, hard bias layers are arranged in the same layer level as a free magnetic layer, and the upper surfaces of the hard bias layers are joined to the sides of a lamination at positions lower than the upper edges of the sides of the lamination above a substrate. The upper surfaces of the hard bias layers are also joined to the sides of the lamination at the same position as or positions lower than the uppermost position of the hard bias layers above the substrate. A spin-valve thin film element is provided having a decrease in an effective magnetic field applied to the free magnetic layer, and a magnetic field in the direction opposite to the magnetization direction of the free magnetic layer, permitting sufficient control of the magnetic domain of the free magnetic layer, and exhibiting excellent stability. The present invention also provides a method of manufacturing the spin-valve thin film element.

摘要翻译： 在本发明中，将硬偏置层设置在与自由磁性层相同的层次上，并且将硬偏置层的上表面与叠层的侧面接合， 层压在基材上方。 硬偏置层的上表面也在与基板上方的硬偏置层的最上位置相同的位置处或者位于比位置低的位置处接合到层压体的侧面。 提供了一种自旋阀薄膜元件，其具有施加到自由磁性层的有效磁场的减小和与自由磁性层的磁化方向相反的方向的磁场，从而允许充分控制磁畴的磁畴 自由磁性层，稳定性优异。 本发明还提供一种制造自旋阀薄膜元件的方法。

公开(公告)号：US06847508B2

公开(公告)日：2005-01-25

申请号：US09727180

申请日：2000-11-30

申请人： Kenichi Tanaka ,  Masamichi Saito ,  Yosuke Ide ,  Naoya Hasegawa ,  Yoshihiko Kakihara ,  Kenji Honda

发明人： Kenichi Tanaka ,  Masamichi Saito ,  Yosuke Ide ,  Naoya Hasegawa ,  Yoshihiko Kakihara ,  Kenji Honda

IPC分类号： G01R33/09 ,  G11B5/39 ,  H01F10/32 ,  H01F41/32 ,  H01L43/08 ,  G11B5/127 ,  G11B5/339

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B2005/3996 ,  H01F10/324 ,  H01F10/3268 ,  H01F10/3272 ,  H01F41/325

摘要： The present invention provides a spin valve thin film magnetic element including a laminate in which an antiferromagnetic layer, a pinned magnetic layer provided in contact with the antiferromagnetic layer so that the magnetization direction is pinned by an exchange coupling magnetic field with the antiferromagnetic layer, a nonmagnetic conductive layer provided in contact with the pinned magnetic layer, a second free magnetic layer provided in contact with the nonmagnetic conductive layer, a nonmagnetic intermediate layer provided in contact with the second free magnetic layer, a first free magnetic layer provided in contact with the nonmagnetic intermediate layer and antiferromagnetically coupled with the second free magnetic layer to form a ferrimagnetic state together with the second free magnetic layer, and a backed layer provided in contact with the first free magnetic layer and having higher conductivity than the first free magnetic layer are laminated. The present invention also provides a magnetic head using the spin valve thin film magnetic element.

摘要翻译： 本发明提供了一种自旋阀薄膜磁性元件，其包括层叠体，其中反铁磁层，与反铁磁性层接触的被钉扎的磁性层，使得磁化方向被与反铁磁性层的交换耦合磁场固定， 设置成与被钉扎的磁性层接触的非磁性导电层，与非磁性导电层接触设置的第二自由磁性层，与第二自由磁性层接触设置的非磁性中间层，与第二自由磁性层接触的第一自由磁性层 非磁性中间层与第二自由磁性层反铁磁耦合以与第二自由磁性层一起形成亚铁磁状态，并且与第一自由磁性层接触并具有比第一自由磁性层更高的导电性的背衬层被层压 。 本发明还提供一种使用自旋阀薄膜磁性元件的磁头。

公开(公告)号：US06844998B2

公开(公告)日：2005-01-18

申请号：US10103359

申请日：2002-03-20

申请人： Daigo Aoki ,  Kenji Honda ,  Kiyoshi Sato ,  Naoya Hasegawa ,  Yukie Nakazawa

发明人： Daigo Aoki ,  Kenji Honda ,  Kiyoshi Sato ,  Naoya Hasegawa ,  Yukie Nakazawa

IPC分类号： G01R33/09 ,  G11B5/39 ,  H01L43/08

CPC分类号： G11B5/3903 ,  H01L43/08

摘要： Assuming that a distance between an upper shield layer and a lower shield layer in an area, which overlaps only a first electrode layer, but does not overlap a second electrode layer, is G1s, and a distance between the upper shield layer and the lower shield layer at a position in alignment with a center of a multilayered film is G1c, a difference in value between G1s and G1c is set to be not larger than a predetermined value, whereby an effective track (read) width can be reduced.

摘要翻译： 假设在仅与第一电极层重叠但不与第二电极层重叠的区域中的上屏蔽层和下屏蔽层之间的距离为G1s，并且上屏蔽层和下屏蔽层之间的距离 在与多层膜的中心对准的位置处的层是G1c，G1s和G1c之间的值之差被设定为不大于预定值，从而可以减少有效的轨迹（读取）宽度。

公开(公告)号：US06643107B1

公开(公告)日：2003-11-04

申请号：US09679724

申请日：2000-10-04

申请人： Naoya Hasegawa ,  Kiyoshi Sato ,  Kenji Honda

发明人： Naoya Hasegawa ,  Kiyoshi Sato ,  Kenji Honda

IPC分类号： G11B539

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/313 ,  G11B5/3143 ,  G11B5/3903 ,  H01F10/3272 ,  H01F41/325

摘要： The invention provides a spin valve thin film element in which output characteristics and the stability of reproduced waveforms are improved, asymmetry is decreased, and the occurrence of side reading is prevented. The spin valve thin film element includes a lamination having an antiferromagnetic layer, a first pinned magnetic layer, a nonmagnetic intermediate layer, a second pinned magnetic layer, a nonmagnetic conductive layer, a free magnetic layer, and a backed layer composed of a nonmagnetic conductive material, which are laminated on a substrate. Hard bias layers are formed on both sides of the lamination, and orient the magnetization direction of the free magnetic layer in the direction crossing the magnetization direction of the second pinned magnetic layer. Electrode layers are formed on the hard bias layers to supply a sensing current J to the lamination. The electrode layers are formed to extend to the surface of the lamination toward the central portion from both sides of the lamination.

摘要翻译： 本发明提供了一种自旋阀薄膜元件，其中输出特性和再现波形的稳定性得到改善，不对称性降低，并且防止了侧读出现。 自旋阀薄膜元件包括具有反铁磁层，第一钉扎磁性层，非磁性中间层，第二钉扎磁性层，非磁性导电层，自由磁性层和由非磁性导电性构成的背衬层的层压体 材料，其被层压在基底上。 在层叠体的两面形成有硬偏移层，并且在与第二被钉扎磁性层的磁化方向交叉的方向上使自由磁性层的磁化方向取向。 电极层形成在硬偏压层上，以向层压提供感测电流J。 电极层被形成为从层压体的两侧朝向中心部分延伸到层压体的表面。

公开(公告)号：US08009391B2

公开(公告)日：2011-08-30

申请号：US12120887

申请日：2008-05-15

申请人： Kenichi Tanaka ,  Eiji Umetsu ,  Kazuaki Ikarashi ,  Kota Asatsuma ,  Norimasa Okanishi ,  Yoshihiro Nishiyama ,  Masamichi Saito ,  Yosuke Ide ,  Kazumasa Nishimura ,  Ryo Nakabayashi ,  Hidekazu Kobayashi ,  Akio Hanada ,  Naoya Hasegawa

发明人： Kenichi Tanaka ,  Eiji Umetsu ,  Kazuaki Ikarashi ,  Kota Asatsuma ,  Norimasa Okanishi ,  Yoshihiro Nishiyama ,  Masamichi Saito ,  Yosuke Ide ,  Kazumasa Nishimura ,  Ryo Nakabayashi ,  Hidekazu Kobayashi ,  Akio Hanada ,  Naoya Hasegawa

IPC分类号： G11B5/33

CPC分类号： G01R33/093 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G11B5/3906 ,  G11B5/3909 ,  H01F10/30 ,  H01F10/3254 ,  H01F10/3277 ,  H01F41/302 ,  H01L43/08 ,  H01L43/12

摘要： An underlying layer is composed of Co—Fe—B that is an amorphous magnetic material. Thus, the upper surface of the underlying layer can be taken as a lower shield layer-side reference position for obtaining a gap length (GL) between upper and lower shields, resulting in a narrower gap than before. In addition, since the underlying layer has an amorphous structure, the underlying layer does not adversely affect the crystalline orientation of individual layers to be formed thereon, and the surface of the underlying layer has good planarizability. Accordingly, PW50 (half-amplitude pulse width) and SN ratio can be improved more than before without causing a decrease in rate of change in resistance (Δ R/R) or the like, thereby achieving a structure suitable for increasing recording density.

摘要翻译： 下层由作为非晶磁性材料的Co-Fe-B组成。 因此，可以将下层的上表面作为下屏蔽层侧参考位置，以获得上屏蔽和下屏蔽之间的间隙长度（GL），导致与之前的间隙较窄。 此外，由于底层具有非晶结构，所以下层不会对要在其上形成的各层的结晶取向产生不利影响，并且下层的表面具有良好的平坦化性。 因此，PW50（半幅度脉冲宽度）和SN比可以比以前更多地改善，而不会导致电阻变化率（＆Dgr; R / R）等的降低，从而实现适于提高记录密度的结构。