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    Compositions and processes for photolithography
    6.
    发明授权
    Compositions and processes for photolithography 有权
    光刻的组成和工艺

    公开(公告)号：US09507260B2

    公开(公告)日：2016-11-29

    申请号：US12592160

    申请日：2009-11-19

    申请人： Deyan Wang ,  Chunyi Wu ,  Cheng-Bai Xu ,  George G. Barclay

    发明人： Deyan Wang ,  Chunyi Wu ,  Cheng-Bai Xu ,  George G. Barclay

    IPC分类号： G03F7/039 ,  G03F7/20 ,  G03F7/004 ,  G03F7/038 ,  G03F7/11 ,  G03F7/075

    CPC分类号： G03F7/0046 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/0757 ,  G03F7/11 ,  G03F7/2041

    摘要： New photoresist compositions are provided that are useful for immersion lithography. In one preferred aspect, photoresist composition are provided that comprise: (i) one or more resins that comprise photoacid-labile groups, (ii) a photoactive component, and (iii) one or more materials that comprise photoacid labile groups and that are distinct from the one or more resins; wherein the deprotection activation energy of photoacid-labile groups of the one or more materials is about the same as or lower than the deprotection activation energy of photoacid-labile groups of the one or more resins. In another preferred aspect, photoresist compositions are provided that comprise (i) one or more resins, (ii) a photoactive component, and (iii) one or more materials that comprise a sufficient amount of acidic groups to provide a dark field dissolution rate of at least one angstrom per second.

    摘要翻译： 提供了可用于浸没式光刻的新的光致抗蚀剂组合物。 在一个优选的方面，提供光致抗蚀剂组合物，其包含：（i）一种或多种包含光酸不稳定基团的树脂，（ii）光活性组分，和（iii）一种或多种包含光致酸不稳定基团并且是不同的 从一种或多种树脂; 其中所述一种或多种材料的光致酸不稳定基团的去保护活化能大约等于或低于所述一种或多种树脂的光致酸不稳定基团的去保护活化能。 在另一个优选的方面，提供光致抗蚀剂组合物，其包含（i）一种或多种树脂，（ii）光活性组分，和（iii）一种或多种包含足够量的酸性基团以提供暗场溶解速率的材料 每秒至少一埃。

    Compositions and processes for photolithography
    8.
    发明授权
    Compositions and processes for photolithography 有权
    光刻的组成和工艺

    公开(公告)号：US09122159B2

    公开(公告)日：2015-09-01

    申请号：US13445442

    申请日：2012-04-12

    申请人： Deyan Wang ,  Chunyi Wu

    发明人： Deyan Wang ,  Chunyi Wu

    IPC分类号： G03F7/11 ,  G03F7/004 ,  G03F7/20

    CPC分类号： G03F7/11 ,  G03F7/0046 ,  G03F7/2041

    摘要： Topcoat layer compositions suitable for use in forming a topcoat layer over a layer of photoresist include: a matrix polymer which is aqueous alkali soluble; a first additive of mer which is aqueous alkali soluble and comprises polymerized units of a monomer of the following general formula (I): wherein: R1 is hydrogen or a C1 to C6 alkyl or fluoroalkyl group; R2 is a C3 to C8 branched alkylene group; and R3 is a C1 to C4 fluoroalkyl group; and wherein the first additive polymer is present in the composition in an amount less than the matrix polymer, and the first additive polymer has a lower surface energy than a surface energy of the matrix polymer; wherein a layer of the topcoat composition in a dried state has a water receding contact angle of from 75 to 85°. The compositions find particular applicability to immersion lithography processing.

    摘要翻译： 适用于在光致抗蚀剂层上形成顶涂层的面漆层组合物包括：碱溶性水性基质聚合物; 第一种碱金属添加剂，其为碱溶性水溶液，并且包含以下通式（I）的单体的聚合单元：其中：R 1为氢或C 1至C 6烷基或氟代烷基; R2是C3〜C8支链亚烷基; R3为C1〜C4氟代烷基; 并且其中所述第一添加剂聚合物以小于所述基质聚合物的量存在于所述组合物中，并且所述第一添加剂聚合物具有比所述基质聚合物的表面能更低的表面能; 其中处于干燥状态的面漆组合物的层具有75至85°的退水接触角。 该组合物特别适用于浸渍光刻加工。

    Leveler compounds
    10.
    发明申请
    Leveler compounds 有权

    公开(公告)号：US20090139873A1

    公开(公告)日：2009-06-04

    申请号：US12322090

    申请日：2009-01-29

    申请人： Deyan Wang ,  Robert D. Mikkola ,  Chunyi Wu ,  George G. Barclay

    发明人： Deyan Wang ,  Robert D. Mikkola ,  Chunyi Wu ,  George G. Barclay

    IPC分类号： C25D3/38 ,  C08L63/10

    CPC分类号： C25D3/38 ,  H01L21/2885 ,  H05K3/423

    摘要： Plating baths containing a mixture of leveling agents, where the mixture includes a first level agent having a first diffusion coefficient and a second leveling agent having a second diffusion coefficient, are provided. Such plating baths deposit a metal layer, particularly a copper layer, that is substantially planar across a range of electrolyte concentrations. Methods of depositing metal layers using such plating baths are also disclosed. These baths and methods are useful for providing a planar layer of copper on a substrate having small apertures, such as an electronic device.