公开(公告)号：US10988718B2

公开(公告)日：2021-04-27

申请号：US16308053

申请日：2017-03-09

Applicant: ENTEGRIS, INC. ,  Thomas Parson ,  Shrane-Ning Jenq ,  Steven Medd ,  Daniela White ,  Michael White ,  Donald Frye

Inventor： Thomas Parson ,  Shrane-Ning Jenq ,  Steven Medd ,  Daniela White ,  Michael White ,  Donald Frye

IPC: C11D7/32 ,  C11D11/00 ,  C11D3/20 ,  C11D3/37 ,  H01L21/02 ,  C11D1/08 ,  C11D1/00 ,  C23F1/26 ,  C23F1/28 ,  B08B3/08 ,  C11D3/04 ,  C11D3/30 ,  C11D3/32 ,  C11D3/33

Abstract: A removal composition and process for cleaning post-chemical mechanical polishing (CMP) contaminants and particles from a microelectronic device having said particles and contaminants thereon. The removal compositions include at least one at least one organic additive; at least one metal chelating agent; and at least one polyelectrolyte. The composition achieves highly efficacious removal of the particles and CMP contaminant material from the surface of the microelectronic device without compromising the low-k dielectric, silicon nitride, and metal containing layers such as tungsten-containing layers.

公开(公告)号：US10351809B2

公开(公告)日：2019-07-16

申请号：US15540293

申请日：2016-01-05

Applicant: ENTEGRIS, INC.

Inventor： Elizabeth Thomas ,  Donald Frye ,  Jun Liu ,  Michael White ,  Danela White ,  Chao-Yu Wang

IPC: C11D3/30 ,  C11D11/00 ,  H01L21/02 ,  B08B3/08 ,  C11D3/20 ,  C11D3/26 ,  C11D3/34 ,  C11D7/32 ,  C11D1/62 ,  H01L21/321 ,  H01L21/768

Abstract: A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions are substantially devoid of alkali hydroxides, alkaline earth metal hydroxides, and tetramethylammonium hydroxide. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.

公开(公告)号：US11149235B2

公开(公告)日：2021-10-19

申请号：US16515935

申请日：2019-07-18

Applicant: ENTEGRIS, INC.

Inventor： Daniela White ,  Elizabeth Thomas ,  Jun Liu ,  Michael White ,  Chao-Yu Wang ,  Donald Frye

IPC: C11D7/32 ,  C11D11/00 ,  C11D7/50 ,  H01L21/02 ,  C11D7/34

Abstract: A cleaning composition and process for cleaning an in-process microelectronic device substrate, e.g., by post-chemical mechanical polishing (CMP) cleaning, to remove residue from a surface thereof, wherein the cleaning composition may be especially effective for cleaning a substrate surface that includes exposed metal such as cobalt, copper, or both, along with dielectric or low k dielectric material, and wherein the cleaning composition includes corrosion inhibitor to inhibit corrosion of the exposed metal.

公开(公告)号：US11845917B2

公开(公告)日：2023-12-19

申请号：US16694426

申请日：2019-11-25

Applicant: ENTEGRIS, INC.

Inventor： Daniela White ,  Donald Frye ,  Elizabeth Thomas ,  Jun Liu ,  Michael White

IPC: C09K13/00 ,  C11D7/32 ,  C11D11/00 ,  C11D7/34 ,  B08B3/08 ,  C11D7/06 ,  H01L21/02 ,  C11D7/26

CPC classification number: C11D7/3218 ,  B08B3/08 ,  C09K13/00 ,  C11D7/06 ,  C11D7/265 ,  C11D7/34 ,  C11D11/0047 ,  H01L21/02057 ,  H01L21/02074

Abstract: A cleaning composition is disclosed for cleaning residue and/or contaminants from microelectronic devices having same thereon. The composition comprises at least one complexing agent, at least one cleaning additive, at least one pH adjusting agent, water, and at least one oxylamine compound. Advantageously, the compositions show effective cleaning of cobalt-containing substrates and improved cobalt compatibility.

公开(公告)号：US11127587B2

公开(公告)日：2021-09-21

申请号：US15116372

申请日：2015-02-03

Applicant: ENTEGRIS, INC.

Inventor： Jun Liu ,  Elizabeth Thomas ,  Donald Frye

IPC: H01L21/02 ,  C11D7/06 ,  C11D7/16 ,  C11D7/26 ,  C11D7/32 ,  C11D11/00 ,  C11D7/36 ,  C11D7/12 ,  C11D7/04 ,  C11D7/10 ,  C11D7/34

Abstract: An amine-free composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The compositions achieve highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material, copper interconnect material, or cobalt-containing materials.

公开(公告)号：US20230323248A1

公开(公告)日：2023-10-12

申请号：US18124355

申请日：2023-03-21

Applicant: ENTEGRIS, INC.

Inventor： Volley Wang ,  Atanu K. Das ,  Michael L. White ,  Chun-I Lee ,  Nilesh Gunda ,  Daniela White ,  Donald Frye

IPC: C11D3/30 ,  C11D3/43 ,  C11D17/00 ,  C11D1/66 ,  C11D3/00 ,  C11D3/24 ,  C11D11/00

CPC classification number: C11D3/0042 ,  C11D1/66 ,  C11D3/245 ,  C11D3/30 ,  C11D3/43 ,  C11D11/0047 ,  C11D17/0008

Abstract: The invention provides compositions useful in post-CMP cleaning operations where ceria is present. In one aspect, the invention provides a composition comprising a reducing agent; a chelating agent; an amino(C6-C12 alkyl)alcohol; and water; wherein the composition has a pH of less than about 8. The compositions of the invention were found to show improved ceria removal on, for example, poly silicon (poly Si) substrates. Also provided is a method for cleaning a microelectronic device substrate using such compositions and a kit comprising, in one or more containers, selected components of the compositions.

公开(公告)号：US10731109B2

公开(公告)日：2020-08-04

申请号：US15951023

申请日：2018-04-11

Applicant: Entegris, Inc.

Inventor： Donald Frye ,  Jun Liu ,  Daniela White ,  Michael White

IPC: C11D3/30 ,  C11D3/00 ,  C11D11/00 ,  C11D3/33 ,  C11D3/20 ,  C11D3/36 ,  H01L21/02 ,  C11D3/04 ,  C11D3/28

Abstract: A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material. In addition, the cleaning compositions are compatible with ruthenium-containing materials.

公开(公告)号：US20180291309A1

公开(公告)日：2018-10-11

申请号：US15951023

申请日：2018-04-11

Applicant: Entegris, Inc.

Inventor： Donald Frye ,  Jun Liu ,  Daniela White ,  Michael White

IPC: C11D3/00 ,  C11D3/30 ,  C11D3/33 ,  C11D3/20 ,  C11D11/00

Abstract: A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material. In addition, the cleaning compositions are compatible with ruthenium-containing materials.