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15 条记录 (耗时 0.023 秒)

    Thermal dye transfer process for preparing opto-electronic devices
    2.
    发明授权
    Thermal dye transfer process for preparing opto-electronic devices 有权
    用于制备光电器件的热染料转移过程

    公开(公告)号：US06214151B1

    公开(公告)日：2001-04-10

    申请号：US09434996

    申请日：1999-11-05

    申请人： Jianping Chen ,  Jesse Richard Salem ,  John Campbell Scott

    发明人： Jianping Chen ,  Jesse Richard Salem ,  John Campbell Scott

    IPC分类号： B44C1165

    CPC分类号： B41M5/42 ,  B41M5/265 ,  B41M5/345 ,  B41M5/395 ,  B41M5/41 ,  H01L27/32 ,  H01L51/0013 ,  H01L51/5012 ,  Y10S428/914 ,  Y10S428/917

    摘要： A method is described for preparing opto-electronic devices such as organic light-emitting diodes. The method is a thermal dye transfer process in which a dye pattern is transferred from a dye transfer plate into a receiving layer of a substrate by bringing the dye transfer plate into contact with the receiving layer and heating to a relatively low temperature, preferably below the vaporization or sublimation temperature of the dye. The pattern of the dye is maintained upon transfer and diffusion. Preferably, the method is repeated to provide a three-color pattern in the receiving layer. The invention also encompasses an opto-electronic device comprising a receiving layer as prepared by the aforementioned method wherein the receiving layer is sandwiched between two electrodes, one of which is transparent. Optionally, a hole-transporting or electron-transporting layer can be deposited between each electrode and the receiving layer.

    摘要翻译： 描述了一种用于制备诸如有机发光二极管之类的光电器件的方法。 该方法是通过使染料转移板与接收层接触并加热到相对低的温度，优选低于该温度的染料转移板将染料图案从染料转移板转移到基底的接收层中的热染料转移过程 染料的蒸发或升华温度。 在转移和扩散时维持染料的图案。 优选地，重复该方法以在接收层中提供三色图案。 本发明还包括一种光电器件，其包括通过上述方法制备的接收层，其中接收层夹在两个电极之间，其中之一是透明的。 任选地，可以在每个电极和接收层之间沉积空穴传输或电子传输层。

    Method of forming metallized pattern
    4.
    发明授权
    Method of forming metallized pattern 失效
    形成金属化图案的方法

    公开(公告)号：US06900126B2

    公开(公告)日：2005-05-31

    申请号：US10301318

    申请日：2002-11-20

    申请人： Kenneth Raymond Carter ,  Mark Whitney Hart ,  Craig Jon Hawker ,  John Campbell Scott

    发明人： Kenneth Raymond Carter ,  Mark Whitney Hart ,  Craig Jon Hawker ,  John Campbell Scott

    IPC分类号： G03F7/00 ,  H01L21/768 ,  H01L21/44 ,  H01L21/3205 ,  H01L21/4763

    CPC分类号： H01L21/76874 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  H01L21/76838

    摘要： High density circuitry and metallic patterns are grown from polymer that has been patterned using a contact molding process. The patterned polymer is either intrinsically seedable or treated to make it seedable, e.g., it may be seeded with metallic seed ions, such as Pd ions. The patterned polymer is placed in an electroless deposition bath, with metal being plated onto its surface. Using these methods, metal (e.g, copper) may be deposited onto substrates of either organic or inorganic dielectric materials. The dielectric materials may comprise epoxy resins, ceramics, semiconductors (Si), glass, and silicon oxide.

    摘要翻译： 高密度电路和金属图案由已使用接触成型工艺图案化的聚合物生长。 图案化的聚合物是固有可接种的或经处理以使其可接种，例如，其可以用金属种子离子（例如Pd离子）接种。 将图案化的聚合物置于无电沉积浴中，金属镀在其表面上。 使用这些方法，可以将金属（例如铜）沉积在有机或无机介电材料的基底上。 介电材料可以包括环氧树脂，陶瓷，半导体（Si），玻璃和氧化硅。

    Energy-efficient full-color liquid crystal display
    5.
    发明授权
    Energy-efficient full-color liquid crystal display 失效
    节能全彩液晶显示屏

    公开(公告)号：US06295106B1

    公开(公告)日：2001-09-25

    申请号：US09482151

    申请日：2000-01-12

    申请人： Tadashi Fukuzawa ,  Sayuri Kohara ,  Victor Yee Way Lee ,  Robert D. Miller ,  John Campbell Scott ,  Sally A. Swanson

    发明人： Tadashi Fukuzawa ,  Sayuri Kohara ,  Victor Yee Way Lee ,  Robert D. Miller ,  John Campbell Scott ,  Sally A. Swanson

    IPC分类号： G02F11335

    CPC分类号： G02F1/133617 ,  C09B69/101 ,  C09B69/102 ,  G02F1/133603 ,  G02F1/13362 ,  G02F1/133621 ,  G02F2001/133614

    摘要： Novel liquid crystal display (LCD) structures for full-color liquid crystal displays using photoluminescent (PL) fibers. The new architectures simplify the LCD fabrication process by replacing complicated, time consuming photolithography steps for color filter fabrication to a low-cost, high-throughput fiber spinning technology. The new LCD architecture implementing the approach has a higher power efficiency than conventional LCDs. Three structures of LCD devices utilizing photoluminescent (PL) fiber arrays includes: a first structure having PL fiber arrays situated behind the LC shutter (relative to viewers); a second structure having PL fiber arrays situated on top of the LC shutter; and a third structure where the PL fiber arrays are located outside the LC cell. In one of these structures, the fibers not only photoluminesce, but also polarize incident light thus reducing LCD fabrication cost.

    摘要翻译： 使用光致发光（PL）光纤的全色液晶显示器的新型液晶显示器（LCD）结构。 新架构简化了LCD制造工艺，将复杂，耗时的彩色滤光片制作步骤替代为低成本，高通量的纤维纺丝技术。 实现该方法的新型LCD架构具有比传统LCD更高的功率效率。 利用光致发光（PL）光纤阵列的三种LCD装置结构包括：具有位于LC快门（相对于观看者）后面的PL光纤阵列的第一结构; 具有位于所述LC快门顶部的PL光纤阵列的第二结构; 以及其中PL光纤阵列位于LC单元外部的第三结构。 在这些结构之一中，光纤不仅光致发光，而且使入射光偏振，从而降低LCD制造成本。

    Memory device and method of making the same
    7.
    发明授权
    Memory device and method of making the same 有权
    记忆体及其制作方法

    公开(公告)号：US07151029B2

    公开(公告)日：2006-12-19

    申请号：US11151007

    申请日：2005-06-14

    申请人： Luisa Dominica Bozano ,  Kenneth Raymond Carter ,  John Campbell Scott

    发明人： Luisa Dominica Bozano ,  Kenneth Raymond Carter ,  John Campbell Scott

    IPC分类号： H01L21/336 ,  G11C11/00

    CPC分类号： G11C13/00 ,  B82Y10/00 ,  B82Y30/00 ,  G11C13/0014 ,  G11C13/004 ,  G11C13/0069 ,  G11C2013/009 ,  G11C2213/77 ,  H01L27/101 ,  H01L27/2472 ,  H01L45/10 ,  H01L45/1233 ,  H01L45/14 ,  H01L45/1608

    摘要： A multi-stable memory or data storage element is used in crosspoint data-storage arrays, as a switch, a memory device, or as a logical device. The general structure of the multi-stable element comprises a layered, composite medium that both transports and stores charge disposed between two electrodes. Dispersed within the composite medium are discrete charge storage particles that trap and store charge. The multi-stable element achieves an exemplary bi-stable characteristic, providing a switchable device that has two or more stable states reliably created by the application of a voltage to the device. The voltages applied to achieve the “on” state, the “off” state, any intermediate state, and to read the state of the multi-stable element are all of the same polarity.

    摘要翻译： 在交叉点数据存储阵列中，作为交换机，存储设备或逻辑设备使用多稳定存储器或数据存储元件。 多稳定元件的一般结构包括分层的复合介质，其既输送并存储设置在两个电极之间的电荷。 分散在复合介质中的是分离和储存电荷的离散电荷存储颗粒。 多稳定元件实现了示例性的双稳态特征，提供了通过向器件施加电压可靠地产生两个或多个稳定状态的可切换装置。 用于实现“接通”状态，“断开”状态，任何中间状态以及读取多稳态元件的状态的电压都具有相同的极性。

    Non-volatile multi-stable memory device and methods of making and using the same
    8.
    发明授权
    Non-volatile multi-stable memory device and methods of making and using the same 有权
    非易失性多稳定存储器件及其制作与使用方法

    公开(公告)号：US06987689B2

    公开(公告)日：2006-01-17

    申请号：US10645240

    申请日：2003-08-20

    申请人： Luisa Dominica Bozano ,  Kenneth Raymond Carter ,  John Campbell Scott

    发明人： Luisa Dominica Bozano ,  Kenneth Raymond Carter ,  John Campbell Scott

    IPC分类号： G11C11/00

    CPC分类号： G11C13/00 ,  B82Y10/00 ,  B82Y30/00 ,  G11C13/0014 ,  G11C13/004 ,  G11C13/0069 ,  G11C2013/009 ,  G11C2213/77 ,  H01L27/101 ,  H01L27/2472 ,  H01L45/10 ,  H01L45/1233 ,  H01L45/14 ,  H01L45/1608

    摘要： A multi-stable memory or data storage element is used in crosspoint data-storage arrays, as a switch, a memory device, or as a logical device. The general structure of the multi-stable element comprises a layered, composite medium that both transports and stores charge disposed between two electrodes. Dispersed within the composite medium are discrete charge storage particles that trap and store charge. The multi-stable element achieves an exemplary bi-stable characteristic, providing a switchable device that has two or more stable states reliably created by the application of a voltage to the device. The voltages applied to achieve the “on” state, the “off” state, any intermediate state, and to read the state of the multi-stable element are all of the same polarity. The multi-stable element is stable, cyclable, and reproducible in both the “on” state and the “off” state. The storage medium has a relatively high resistance in both its on and off states. Consequently, a dense array can be fabricated without significant cross-talk between adjacent elements. No patterning of the layer of storage medium is required.

    摘要翻译： 在交叉点数据存储阵列中，作为交换机，存储设备或逻辑设备使用多稳定存储器或数据存储元件。 多稳定元件的一般结构包括分层的复合介质，其既输送并存储设置在两个电极之间的电荷。 分散在复合介质中的是分离和储存电荷的离散电荷存储颗粒。 多稳定元件实现了示例性的双稳态特征，提供了通过向器件施加电压可靠地产生两个或多个稳定状态的可切换装置。 用于实现“接通”状态，“断开”状态，任何中间状态以及读取多稳态元件的状态的电压都具有相同的极性。 多稳态元件在“开”状态和“关”状态都是稳定的，可循环的和可再现的。 存储介质在其打开和关闭状态下具有相对较高的电阻。 因此，可以在相邻元件之间没有明显的串扰的情况下制造密集阵列。 不需要存储介质层的图案化。