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    Method and apparatus to match semiconductor device performance
    2.
    发明授权
    Method and apparatus to match semiconductor device performance 失效
    匹配半导体器件性能的方法和装置

    公开(公告)号：US06329690B1

    公开(公告)日：2001-12-11

    申请号：US09425393

    申请日：1999-10-22

    申请人： Kent E. Morrett ,  Edward J. Nowak ,  Stephen A. St. Onge ,  Josef S. Watts

    发明人： Kent E. Morrett ,  Edward J. Nowak ,  Stephen A. St. Onge ,  Josef S. Watts

    IPC分类号： H01L2701

    CPC分类号： H01L27/1203 ,  H01L23/34 ,  H01L23/345 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor structure may include a silicon substrate, a first active device formed in a first region of the silicon substrate, a second active device formed in a second region of the silicon substrate, a first heating device connected thermally to the first active device and a second heating device connected thermally to the second active device. A first temperature sensing device detects a temperature of the first region, a second temperature sensing device detects a temperature of the second region and a circuit activates one of the first heating device and the second heating device in response to a sensed difference in temperature from the first and second temperature sensing devices.

    摘要翻译： 半导体结构可以包括硅衬底，形成在硅衬底的第一区域中的第一有源器件，形成在硅衬底的第二区域中的第二有源器件，与第一有源器件热连接的第一加热器件和 第二加热装置与第二活动装置热连接。 第一温度感测装置检测第一区域的温度，第二温度感测装置检测第二区域的温度，并且电路响应于感测到的温度差异从第一加热装置和第二加热装置中的一个启动 第一和第二温度感测装置。

    Method, system and program storage device for generating accurate performance targets for active semiconductor devices during new technology node development
    3.
    发明授权
    Method, system and program storage device for generating accurate performance targets for active semiconductor devices during new technology node development 失效
    方法，系统和程序存储设备，用于在新技术节点开发过程中为有源半导体器件生成准确的性能指标

    公开(公告)号：US08453101B1

    公开(公告)日：2013-05-28

    申请号：US13302350

    申请日：2011-11-22

    申请人： James M. Johnson ,  Scott K. Springer ,  Rainer Thoma ,  Josef S. Watts

    发明人： James M. Johnson ,  Scott K. Springer ,  Rainer Thoma ,  Josef S. Watts

    IPC分类号： G06F11/22 ,  G06F17/50

    CPC分类号： G06F17/5045

    摘要： Disclosed are embodiments of a method, system and program storage device for generating accurate performance targets for active semiconductor devices during technology node development in order to reduce the number of iterations required for model extraction and/or to improve model quality. In these embodiments, initial sets of performance targets for related semiconductor devices are generated, e.g., by making assumptions based on hardware measurements taken from semiconductor devices in prior technology nodes. Additional processes are then performed on the initial sets of performance targets prior to the modeling stage in order to detect and resolve any inconsistencies between the data in the sets. Specifically, plotting techniques are performed with respect to the performance targets. The results are analyzed to detect any inconsistencies indicating that the performance targets are inaccurate and adjustments are made to the performance targets in order to resolve those inconsistencies.

    摘要翻译： 公开了用于在技术节点开发期间产生有源半导体器件的精确性能目标的方法，系统和程序存储装置的实施例，以便减少模型提取所需的迭代次数和/或提高模型质量。 在这些实施例中，例如通过基于从现有技术节点中的半导体器件获得的硬件测量值做出假设来生成相关半导体器件的初始的性能目标集合。 然后在建模阶段之前对初始的性能目标集进行其他过程，以便检测和解决集合中的数据之间的任何不一致。 具体地，针对性能目标执行绘图技术。 分析结果以检测指示性能目标不准确的任何不一致性，并对性能目标进行调整以解决这些不一致。

    METHOD, SYSTEM AND PROGRAM STORAGE DEVICE FOR GENERATING ACCURATE PERFORMANCE TARGETS FOR ACTIVE SEMICONDUCTOR DEVICES DURING NEW TECHNOLOGY NODE DEVELOPMENT
    4.
    发明申请
    METHOD, SYSTEM AND PROGRAM STORAGE DEVICE FOR GENERATING ACCURATE PERFORMANCE TARGETS FOR ACTIVE SEMICONDUCTOR DEVICES DURING NEW TECHNOLOGY NODE DEVELOPMENT 失效
    用于在新技术节点开发过程中为主动半导体器件生成精确性能目标的方法，系统和程序存储设备

    公开(公告)号：US20130132925A1

    公开(公告)日：2013-05-23

    申请号：US13302350

    申请日：2011-11-22

    申请人： James M. Johnson ,  Scott K. Springer ,  Rainer Thoma ,  Josef S. Watts

    发明人： James M. Johnson ,  Scott K. Springer ,  Rainer Thoma ,  Josef S. Watts

    IPC分类号： G06F17/50

    CPC分类号： G06F17/5045

    摘要： Disclosed are embodiments of a method, system and program storage device for generating accurate performance targets for active semiconductor devices during technology node development in order to reduce the number of iterations required for model extraction and/or to improve model quality. In these embodiments, initial sets of performance targets for related semiconductor devices are generated, e.g., by making assumptions based on hardware measurements taken from semiconductor devices in prior technology nodes. Additional processes are then performed on the initial sets of performance targets prior to the modeling stage in order to detect and resolve any inconsistencies between the data in the sets. Specifically, plotting techniques are performed with respect to the performance targets. The results are analyzed to detect any inconsistencies indicating that the performance targets are inaccurate and adjustments are made to the performance targets in order to resolve those inconsistencies.

    摘要翻译： 公开了用于在技术节点开发期间产生有源半导体器件的精确性能目标的方法，系统和程序存储装置的实施例，以便减少模型提取所需的迭代次数和/或提高模型质量。 在这些实施例中，例如通过基于从现有技术节点中的半导体器件获得的硬件测量值做出假设来生成相关半导体器件的初始的性能目标集合。 然后在建模阶段之前对初始的性能目标集进行其他过程，以便检测和解决集合中的数据之间的任何不一致。 具体地，针对性能目标执行绘图技术。 分析结果以检测指示性能目标不准确的任何不一致性，并对性能目标进行调整以解决这些不一致。

    MEASURING FLOATING BODY VOLTAGE IN SILICON-ON-INSULATOR (SOI) METAL-OXIDE-SEMICONDUCTOR-FIELD-EFFECT-TRANSISTOR (MOSFET)
    5.
    发明申请
    MEASURING FLOATING BODY VOLTAGE IN SILICON-ON-INSULATOR (SOI) METAL-OXIDE-SEMICONDUCTOR-FIELD-EFFECT-TRANSISTOR (MOSFET) 失效
    绝缘体（SOI）金属氧化物半导体场效应晶体管（MOSFET）测量浮动体电压

    公开(公告)号：US20120068722A1

    公开(公告)日：2012-03-22

    申请号：US12886064

    申请日：2010-09-20

    申请人： Sourabh Khandelwal ,  Josef S. Watts

    发明人： Sourabh Khandelwal ,  Josef S. Watts

    IPC分类号： G01R27/28

    CPC分类号： G01R19/00 ,  G01R31/2621

    摘要： In one embodiment, a body region of a body-contacted silicon-on-insulator (SOI) metal-oxide-semiconductor-field-effect-transistor (MOSFET) is connected to a gate of another MOSFET in a sensing circuit to form a floating body node. The voltage at the floating body node is accurately obtained at the output of the sensing circuit and used to provide an estimate of required floating body voltage over a full device operating range.

    摘要翻译： 在一个实施例中，体接触绝缘体上硅（SOI）金属氧化物半导体场效应晶体管（MOSFET）的体区连接到感测电路中的另一MOSFET的栅极以形成浮置 身体节点。 在感测电路的输出处精确地获得浮体节点处的电压，并用于在整个器件工作范围内提供所需浮体电压的估计。

    Modeling small mosfets using ensemble devices
    6.
    发明授权
    Modeling small mosfets using ensemble devices 失效
    使用集成设备建模小型mosfet

    公开(公告)号：US07353473B2

    公开(公告)日：2008-04-01

    申请号：US11381613

    申请日：2006-05-04

    申请人： Robinson E. Pino ,  Henry W. Trombley ,  Josef S. Watts

    发明人： Robinson E. Pino ,  Henry W. Trombley ,  Josef S. Watts

    IPC分类号： G06F17/50 ,  G06F17/10

    CPC分类号： G06F17/5036

    摘要： A method of modeling statistical variation of field effect transistors having fingers physically measures characteristics of existing transistors and extracts a scaled simulation based on the characteristics of the existing transistors using a first model. The method creates synthetic single finger data using the scaled simulation. The method physically measures characteristics of existing pairs of matched transistors and extracts random dopant fluctuations from the characteristics of the existing pairs of matched transistors using a second model that is different than the first model. The method extracts a single finger from the synthetic single finger data and the random dopant fluctuations using the first model. The method can also create an ensemble model by determining the skew between a typical single device model and a typical ensemble model. The method adjusts parameters of the first model to cause the single finger to match targets for the single finger. Also, the method produces the centered scalable single finger model (model C) after the adjustments are complete.

    摘要翻译： 具有手指的场效应晶体管的统计变化的模型的方法物理地测量现有晶体管的特性，并且基于使用第一模型的现有晶体管的特性提取缩放模拟。 该方法使用缩放模拟创建合成单指数据。 该方法物理地测量现有的匹配晶体管对的特性，并使用不同于第一模型的第二模型从现有的匹配晶体管对的特性中提取随机掺杂物波动。 该方法使用第一模型从合成单指数据和随机掺杂剂波动提取单个手指。 该方法还可以通过确定典型的单个设备模型和典型的集合模型之间的偏差来创建集合模型。 该方法调整第一个模型的参数，使单个手指匹配单个手指的目标。 此外，在调整完成后，该方法产生居中的可伸缩单指模型（模型C）。

    Solutions for modeling spatially correlated variations in an integrated circuit
    8.
    发明授权
    Solutions for modeling spatially correlated variations in an integrated circuit 有权
    用于建模集成电路中空间相关变化的解决方案

    公开(公告)号：US08903697B2

    公开(公告)日：2014-12-02

    申请号：US13233176

    申请日：2011-09-15

    申请人： Henry W. Trombley ,  Josef S. Watts

    发明人： Henry W. Trombley ,  Josef S. Watts

    IPC分类号： G06F17/50

    CPC分类号： G06F17/5068 ,  G06F2217/10

    摘要： A computer-implemented method for modeling Spatially Correlated Variation (SCV) in a design of an Integrated Circuit (IC) is disclosed. In one embodiment, the method includes: generating a set of coefficient values for a position dependent SCV function, the set of coefficient values being selected from a set of random variables; obtaining a set of coordinates defining a position of each of a plurality of devices in a defined field; evaluating the position dependent SCV function to determine a device attribute variation for each of the plurality of devices based upon the coordinates of each of the plurality of devices; modifying at least one model parameter based upon the evaluation of the position dependent SCV function; and running a circuit simulation using the at least one modified model parameter.

    摘要翻译： 公开了一种用于在集成电路（IC）的设计中对空间相关变化（SCV）建模的计算机实现的方法。 在一个实施例中，该方法包括：产生用于位置相关SCV函数的一组系数值，该系数值集合是从一组随机变量中选择的; 在定义的字段中获得定义多个设备中的每一个的位置的坐标集合; 基于所述多个设备中的每一个的坐标来评估所述位置相关SCV功能以确定所述多个设备中的每一个的设备属性变化; 基于位置相关SCV功能的评估来修改至少一个模型参数; 以及使用所述至少一个修改的模型参数来运行电路仿真。

    SOLUTIONS FOR MODELING SPATIALLY CORRELATED VARIATIONS IN AN INTEGRATED CIRCUIT
    9.
    发明申请
    SOLUTIONS FOR MODELING SPATIALLY CORRELATED VARIATIONS IN AN INTEGRATED CIRCUIT 有权
    用于在集成电路中建模空间相关变化的解决方案

    公开(公告)号：US20130073266A1

    公开(公告)日：2013-03-21

    申请号：US13233176

    申请日：2011-09-15

    申请人： Henry W. Trombley ,  Josef S. Watts

    发明人： Henry W. Trombley ,  Josef S. Watts

    IPC分类号： G06F17/50 ,  G06F17/10

    CPC分类号： G06F17/5068 ,  G06F2217/10

    摘要： A computer-implemented method for modeling Spatially Correlated Variation (SCV) in a design of an Integrated Circuit (IC) is disclosed. In one embodiment, the method includes: generating a set of coefficient values for a position dependent SCV function, the set of coefficient values being selected from a set of random variables; obtaining a set of coordinates defining a position of each of a plurality of devices in a defined field; evaluating the position dependent SCV function to determine a device attribute variation for each of the plurality of devices based upon the coordinates of each of the plurality of devices; modifying at least one model parameter based upon the evaluation of the position dependent SCV function; and running a circuit simulation using the at least one modified model parameter.

    摘要翻译： 公开了一种用于在集成电路（IC）的设计中对空间相关变化（SCV）建模的计算机实现的方法。 在一个实施例中，该方法包括：产生用于位置相关SCV函数的一组系数值，该系数值集合是从一组随机变量中选择的; 在定义的字段中获得定义多个设备中的每一个的位置的坐标集合; 基于所述多个设备中的每一个的坐标来评估所述位置相关SCV功能以确定所述多个设备中的每一个的设备属性变化; 基于位置相关SCV功能的评估来修改至少一个模型参数; 以及使用所述至少一个修改的模型参数来运行电路仿真。