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公开(公告)号:US20190190092A1
公开(公告)日:2019-06-20
申请号:US16093391
申请日:2017-12-07
Applicant: LG Chem, Ltd.
Inventor: Su-Hyun Kim , Su-Rim Lee , Song-Taek Oh
CPC classification number: H01M10/486 , G01R27/00 , G01R31/36 , H01M2/26 , H01M2/263 , H01M2/30 , H01M4/661 , H01M10/0431 , H01M10/045 , H01M10/0583 , H01M10/0585 , H01M10/0587 , H01M10/4285 , H01M10/48 , H01M2200/00
Abstract: Disclosed is a battery cell having an electrode assembly configured as a structure in which a cathode, an anode, and a separator interposed between the cathode and the anode, wherein a surface or both surfaces of respective electrode current collectors of the cathode and the anode are coated with an electrode mixture including an electrode active material, the cathode and the anode are provided with a first cathode terminal and a first anode terminal respectively serving as external input/output terminals of the battery cell, and at least one of the cathode and the anode is provided with a resistance measurement terminal at a position opposite to the external input/output terminal, for measuring a resistance of an electrode current collector.
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公开(公告)号:US20180143077A1
公开(公告)日:2018-05-24
申请号:US15876472
申请日:2018-01-22
Applicant: GLOBALFOUNDRIES Inc.
Inventor: Abner BELLO , Stephanie WAITE , William J. FOSNIGHT , Thomas BEEG
IPC: G01J5/00
CPC classification number: H01L21/6732 , G01J5/0007 , G01J5/025 , G01J5/0825 , G01J5/0896 , G01N21/211 , G01N21/55 , G01N2201/06113 , G01N2201/0683 , G01N2201/12 , G01R27/00 , G05B2219/37224 , H01L21/67253 , H01L21/67353 , H01L21/67386 , H01L21/67745 , H01L22/12
Abstract: A self-contained metrology wafer carrier systems and methods of measuring one or more characteristics of semiconductor wafers are provided. A wafer carrier system includes, for instance, a housing configured for transport within the automated material handling system, the housing having a support configured to support a semiconductor wafer in the housing, and a metrology system disposed within the housing, the metrology system operable to measure at least one characteristic of the wafer, the metrology system comprising a sensing unit and a computing unit operably connected to the sensing unit. Also provided are methods of measuring one or more characteristics of a semiconductor wafer within the wafer carrier systems of the present disclosure.
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公开(公告)号:US09967085B1
公开(公告)日:2018-05-08
申请号:US15351225
申请日:2016-11-14
Applicant: ANRITSU COMPANY
Inventor: Donald Anthony Bradley
IPC: H04B10/00 , H04L7/00 , H04B10/079 , H04L7/033
CPC classification number: H04L7/0075 , G01R25/00 , G01R27/00 , G01R31/282 , H03L7/07 , H03L7/0812 , H03L7/18 , H04B10/0795 , H04B10/25 , H04L5/14 , H04L7/0331
Abstract: A measurement instrument for measuring electrical characteristics of a device under test (DUT) includes a synchronization signal generator configured to generate a synchronization signal transmittable from the measurement instrument to a receiver. The synchronization generator comprises a phase-locked loop (PLL) that locks the phase of the LO signal to the synchronization signal. The A/D clock signal is generated from the synchronization signal.
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公开(公告)号:US09946396B2
公开(公告)日:2018-04-17
申请号:US15036633
申请日:2014-12-12
Applicant: SHIN-ETSU POLYMER CO., LTD.
Inventor: Tomohiro Nozaki , Hiroto Komatsu , Takashi Kawamura
CPC classification number: G06F3/0416 , G01R27/00 , G06F3/044 , G06F2203/04102 , G06F2203/04103 , G06F2203/04112
Abstract: A transparent electrode capacitance sensor includes a transparent resin substrate; at least one transparent electrode formed on the transparent resin substrate; a pseudo auxiliary electrode formed in at least a portion of an outer periphery of the transparent electrode; and a lead wire connected to the pseudo auxiliary electrode, wherein the pseudo auxiliary electrode is thicker than the transparent electrode, and includes the same material as the transparent electrode.
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公开(公告)号:US20180067063A1
公开(公告)日:2018-03-08
申请号:US15258461
申请日:2016-09-07
Applicant: Silicon Laboratories Inc.
Inventor: Alexander Cherkassky , Bruce P. Del Signore
CPC classification number: G01R27/00 , A61B5/0002 , A61B5/024 , A61B5/053 , A61B5/0537 , A61B5/0816 , A61B5/7225 , A61B5/7278 , G01N27/04 , G01R19/0038 , G01R25/005 , G01R27/02
Abstract: Embodiments of synchronous detection circuits and methods are provided for extracting magnitude and phase information from a waveform. One embodiment of a synchronous detection circuit includes a driver circuit, an analog-to-digital converter (ADC) and a controller. The driver circuit is configured to supply an input waveform at an input frequency to a load. The ADC is coupled to receive an output waveform from the load, and configured for generating four digital samples, each spaced 90° apart, for every period of the output waveform. The controller is configured for setting an oversampling rate (OSR) of the ADC, so that the ADC generates an integer number, M, of sub-samples for each digital sample generated by the ADC, where the integer number, M, of sub-samples is inversely proportional to the input frequency of the input waveform. The controller is further configured to use the digital samples generated by the ADC to extract magnitude and phase information from the output waveform.
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公开(公告)号:US09911634B2
公开(公告)日:2018-03-06
申请号:US15193502
申请日:2016-06-27
Applicant: GLOBALFOUNDRIES Inc.
Inventor: Abner Bello , Stephanie Waite , William J. Fosnight , Thomas Beeg
CPC classification number: G01J5/0096 , G01J5/0007 , G01J5/025 , G01J5/0825 , G01J5/0896 , G01N21/211 , G01N21/55 , G01N2201/06113 , G01N2201/0683 , G01N2201/12 , G01R27/00 , H01L21/67253 , H01L21/6732 , H01L21/67353 , H01L21/67386 , H01L22/12
Abstract: A self-contained metrology wafer carrier systems and methods of measuring one or more characteristics of semiconductor wafers are provided. A wafer carrier system includes, for instance, a housing configured for transport within the automated material handling system, the housing having a support configured to support a semiconductor wafer in the housing, and a metrology system disposed within the housing, the metrology system operable to measure at least one characteristic of the wafer, the metrology system comprising a sensing unit and a computing unit operably connected to the sensing unit. Also provided are methods of measuring one or more characteristics of a semiconductor wafer within the wafer carrier systems of the present disclosure.
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公开(公告)号:US09893423B2
公开(公告)日:2018-02-13
申请号:US14534030
申请日:2014-11-05
Applicant: CANON KABUSHIKI KAISHA
Inventor: Alexis Debray
CPC classification number: H01Q7/00 , G01N22/00 , G01R27/00 , G01R27/06 , G01S13/0209 , G01S13/89 , H01Q1/248 , H01Q5/40
Abstract: Provided is a device for performing at least one of detection and emission of electromagnetic waves, including a plurality of antennas, in which a first antenna includes a first radiating element and a first electronic element electrically connected to the first radiating element, and is sensitive to a first frequency band, and in which a second antenna includes a second radiating element and a second electronic element electrically connected to the second radiating element, and is sensitive to a second frequency band. At least a part of the second radiating element is arranged inside the first radiating element.
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公开(公告)号:US09860054B1
公开(公告)日:2018-01-02
申请号:US15351291
申请日:2016-11-14
Applicant: ANRITSU COMPANY
Inventor: Donald Anthony Bradley
IPC: H04B10/00 , H04L7/00 , H04B10/079 , H04L5/14
CPC classification number: H04L7/0075 , G01R25/00 , G01R27/00 , G01R31/282 , H03L7/07 , H03L7/0812 , H03L7/18 , H04B10/0795 , H04B10/25 , H04L5/14 , H04L7/0331
Abstract: A measurement instrument for measuring electrical characteristics of a device under test (DUT) includes a synchronization signal generator for generating a synchronization signal transmittable to a receiver, a voltage controlled phase shifter (VCPS) connected with the synchronization signal generator and a phase-to-voltage converter configured to drive the VCPS. The synchronization signal is transmitted via a duplexer configured to transmit the synchronization signal from the measurement instrument to the receiver via a fiber optic cable and retransmit the received synchronization signal from the receiver to the measurement instrument via the fiber optic cable. The phase-to-voltage converter receives as inputs the synchronization signal input to the VCPS, the synchronization signal output from the VCPS and the retransmitted synchronization signal received at the measurement instrument from the receiver. An output of the phase-to-voltage converter is provided as input to the VCPS.
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公开(公告)号:US20170279544A1
公开(公告)日:2017-09-28
申请号:US15467400
申请日:2017-03-23
Applicant: ANRITSU CORPORATION
Inventor: Hanako Noda
CPC classification number: H04B17/102 , G01R27/00 , H04B17/00 , H04B17/12 , H04B17/16 , H04B17/318 , H04L7/041
Abstract: An electric field intensity distribution measurement device 1 that measures, in a near field, a radio signal transmitted from an antenna 110 including a plurality of antenna elements T1 to TN integrated into a transmission device 100 includes a measurement antenna 11 that receives the radio signal as a measurement signal at a plurality of scanning points included in a predetermined scanning range, a reference antenna 12 that receives the radio signal as a reference signal, a phase difference and amplitude calculation unit 16 that calculates a phase difference between a measurement signal and a reference signal with respect to each scanning point, and an amplitude of the measurement signal, and a far-field electric field intensity distribution calculation unit 17 that calculates an electric field intensity distribution in a far field using information on the phase difference and the amplitude calculated by the phase difference and amplitude calculation unit 16.
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公开(公告)号:US09699894B2
公开(公告)日:2017-07-04
申请号:US14895944
申请日:2015-03-11
Applicant: Seoul National University R&DB Foundation
Inventor: Maenghyo Cho , Kyu Jin Cho , Junghyun Ryu , Je Sung Koh , Jong Gu Lee
CPC classification number: H05K1/028 , G01B7/18 , G01B7/20 , G01N27/00 , G01N27/02 , G01R27/00 , G01R27/02 , G01R27/08 , H05K1/02 , H05K3/12 , H05K2201/07
Abstract: Disclosed herein is a deformation sensing flexible substrate using a pattern formed of a conductive material. The deformation sensing flexible substrate, using the pattern formed of the conductive material, includes a flexible substrate; and conductive patterns in which conductors including a conductive material are arranged and formed to be contactable and non-contact to each other based on deformation of the flexible substrate.
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