公开(公告)号：US20160013429A1

公开(公告)日：2016-01-14

申请号：US14860183

申请日：2015-09-21

Applicant: FUJIFILM Corporation

Inventor： Koji TAKAKU ,  Yuki HIRAI ,  Wataru SOTOYAMA

IPC: H01L51/00 ,  C07D493/04 ,  C09D5/24 ,  C07D498/04 ,  C07F7/08 ,  C07D487/04 ,  C07D495/04 ,  C07D513/04

CPC classification number: H01L51/0074 ,  C07D487/04 ,  C07D493/04 ,  C07D495/04 ,  C07D498/04 ,  C07D513/04 ,  C07F7/0812 ,  C09B57/00 ,  C09B57/008 ,  C09D5/24 ,  H01L51/0065 ,  H01L51/0068 ,  H01L51/0071 ,  H01L51/0072 ,  H01L51/0073 ,  H01L51/0094 ,  H01L51/0545 ,  H01L51/0558

Abstract: An organic thin film transistor containing a compound represented by the formula (1) in a semiconductor active layer has a high carrier mobility, a small change in the threshold voltage after repeated driving and a high solubility in an organic solvent. X represents S, O or NR7; A represents CR8 or a nitrogen atom; and at least one of R1 to R8 represents a substituent.

Abstract translation: 在半导体活性层中含有式（1）表示的化合物的有机薄膜晶体管具有高的载流子迁移率，反复驱动后的阈值电压的小变化和在有机溶剂中的高溶解度。 X表示S，O或NR7; A表示CR8或氮原子; 并且R 1至R 8中的至少一个表示取代基。

公开(公告)号：US20150340624A1

公开(公告)日：2015-11-26

申请号：US14816517

申请日：2015-08-03

Applicant: FUJIFILM Corporation

Inventor： Koji TAKAKU ,  Yasunori YONEKUTA ,  Wataru SOTOYAMA ,  Masaru KINOSHITA

IPC: H01L51/00 ,  C07D498/04 ,  C08J5/18 ,  C08K5/47 ,  C09D125/06 ,  C07D513/04 ,  C07F7/18

CPC classification number: H01L51/0071 ,  C07D498/04 ,  C07D513/04 ,  C07F7/0838 ,  C07F7/1804 ,  C08J5/18 ,  C08J2325/06 ,  C08K5/47 ,  C09B57/00 ,  C09D125/06 ,  C09D125/16 ,  H01L51/0035 ,  H01L51/0065 ,  H01L51/0068 ,  H01L51/0094 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/0558

Abstract: An organic thin film transistor containing a compound represented by one of the following formulae in a semiconductor active layer has a high carrier mobility and a small change in the threshold voltage after repeated driving. X represents S or O, and at least one of R1 to R6 represents -L-R wherein L represents alkylene, etc., and R represents alkyl, etc.

Abstract translation: 在半导体有源层中含有下述式表示的化合物的有机薄膜晶体管在重复驱动后具有高的载流子迁移率和阈值电压的小的变化。 X表示S或O，R 1至R 6中的至少一个表示-L-R，其中L表示亚烷基等，R表示烷基等。

公开(公告)号：US20150166561A1

公开(公告)日：2015-06-18

申请号：US14632741

申请日：2015-02-26

Applicant: FUJIFILM Corporation

Inventor： Tetsu KITAMURA ,  Koji TAKAKU ,  Wataru SOTOYAMA ,  Yuki HIRAI ,  Masaru KINOSHITA ,  Yuuta SHIGENOI

IPC: C07D493/04 ,  C07F7/08 ,  H01L51/00 ,  H01L51/05

CPC classification number: C07D493/04 ,  C07F7/0812 ,  C07F7/0838 ,  H01L51/0062 ,  H01L51/0065 ,  H01L51/0073 ,  H01L51/0545 ,  H01L51/0558

Abstract: An organic thin film transistor having a semiconductor active layer containing a compound represented by the formula (1) has a high carrier mobility and a small change in the threshold voltage after repeated operation. R1 to R10 represent H or a substituent, provided that at least one of R1 to R4 and R6 to R9 represents a substituent represented by -L-R, L represents a specific divalent linking group, and R represents an alkyl group, an oligooxyethylene group, an oligosiloxane group, or a trialkylsilyl group.

Abstract translation: 具有含有式（1）表示的化合物的半导体活性层的有机薄膜晶体管在重复操作之后具有高载流子迁移率和阈值电压的小变化。 R 1至R 10表示H或取代基，条件是R 1至R 4和R 6至R 9中的至少一个表示由-LR表示的取代基，L表示特定二价连接基团，R表示烷基，低聚氧乙烯基， 低聚硅氧烷基或三烷基甲硅烷基。

公开(公告)号：US20150340625A1

公开(公告)日：2015-11-26

申请号：US14817842

申请日：2015-08-04

Applicant: FUJIFILM Corporation

Inventor： Koji TAKAKU ,  Wataru SOTOYAMA ,  Masashi KOYANAGI ,  Masaru KINOSHITA

IPC: H01L51/00 ,  C07D491/048 ,  C07D495/04

CPC classification number: H01L51/0071 ,  C07D491/048 ,  C07D495/04 ,  C09B57/00 ,  H01L51/0068 ,  H01L51/0069 ,  H01L51/0074 ,  H01L51/0545 ,  H01L51/0558

Abstract: An organic thin film transistor containing a compound represented by one of the following formulae in a semiconductor active layer has a high carrier mobility and a small change in the threshold voltage after repeated driving. X represents S or O, Z represents a substituent having a length of 3.7 Å or less, and at least one of R1 to R8 represents -L-R wherein L represents alkylene, etc., and R represents alkyl, etc.

Abstract translation: 在半导体有源层中含有下述式表示的化合物的有机薄膜晶体管在重复驱动后具有高的载流子迁移率和阈值电压的小的变化。 X表示S或O，Z表示长度为3.7以下的取代基，R1〜R8中的至少一个表示-L-R，其中L表示亚烷基等，R表示烷基等。

公开(公告)号：US20150221876A1

公开(公告)日：2015-08-06

申请号：US14685902

申请日：2015-04-14

Applicant: FUJIFILM Corporation

Inventor： Tetsu KITAMURA ,  Koji TAKAKU ,  Wataru SOTOYAMA

IPC: H01L51/00 ,  C07F7/08 ,  C07D493/04

CPC classification number: H01L51/0073 ,  C07D493/04 ,  C07F7/0838 ,  C09B57/00 ,  H01L51/0061 ,  H01L51/0068 ,  H01L51/0071 ,  H01L51/0072 ,  H01L51/0094 ,  H01L51/0558

Abstract: An organic thin film transistor containing a compound represented by the formula (1) in a semiconductor active layer has a high carrier mobility and a small fluctuation of the threshold voltage after repeated driving. R1 to R10 represent a hydrogen atom or a substituent, provided that at least one of R1 to R10 represents a substituent represented by the formula (W), or the aromatic hydrocarbon ring formed with any adjacent two of R1 to R10 has a substituent represented by the formula (W). * represents a position bonded to the benzobisbenzofuran skeleton, L represents a single bond or a divalent linking group, and R represents a substituted or unsubstituted acyclic alkyl group having 2 or more carbon atoms, an oligoethyleneoxy group having a repeating number of an ethyleneoxy unit of 2 or more, or an oligosiloxane group having 2 or more silicon atoms.

Abstract translation: 在半导体有源层中含有式（1）表示的化合物的有机薄膜晶体管在反复驱动后具有高的载流子迁移率和阈值电压的小的波动。 R 1〜R 10表示氢原子或取代基，条件是R 1〜R 10中的至少一个表示由式（W）表示的取代基，或者与R 1〜R 10中任意相邻的2个所形成的芳香族烃环具有由 公式（W）。 *表示与苯并二苯并呋喃骨架结合的位置，L表示单键或二价连接基团，R表示取代或未取代的碳原子数2以上的无环烷基，具有重复数量的乙烯氧基单元的低聚亚乙基氧基 2个以上，或者具有2个以上硅原子的低聚硅氧烷基。

公开(公告)号：US20150166560A1

公开(公告)日：2015-06-18

申请号：US14632669

申请日：2015-02-26

Applicant: FUJIFILM Corporation

Inventor： Tetsu KITAMURA ,  Koji TAKAKU ,  Wataru SOTOYAMA

IPC: C07D493/04 ,  H01L51/00 ,  H01L51/05

CPC classification number: C07D493/04 ,  C09B57/00 ,  C09B69/008 ,  H01L51/0073 ,  H01L51/0545 ,  H01L51/0558 ,  H01L51/42 ,  Y02E10/549

Abstract: An organic thin film transistor having a semiconductor active layer containing a compound represented by the formula (1) has a high carrier mobility and a small change in the threshold voltage after repeated operation. R1 to R10 represent H or a substituent, provided that any two adjacent members among R1 to R4 and R6 to R9 are bonded to each other to form a substituted or unsubstituted benzene ring.

Abstract translation: 具有含有式（1）表示的化合物的半导体活性层的有机薄膜晶体管在重复操作之后具有高载流子迁移率和阈值电压的小变化。 R 1至R 10表示H或取代基，条件是R 1至R 4和R 6至R 9中的任何两个相邻的成员彼此键合以形成取代或未取代的苯环。

公开(公告)号：US20160049592A1

公开(公告)日：2016-02-18

申请号：US14865649

申请日：2015-09-25

Applicant: FUJIFILM CORPORATION

Inventor： Yasunori YONEKUTA ,  Koji TAKAKU ,  Wataru SOTOYAMA

IPC: H01L51/00 ,  C07F7/08 ,  C07D517/06 ,  C07F7/18 ,  C07D513/06 ,  C07D498/06

CPC classification number: H01L51/0071 ,  C07D498/06 ,  C07D513/06 ,  C07D517/06 ,  C07F7/0812 ,  C07F7/0838 ,  C07F7/1804 ,  H01L51/0058 ,  H01L51/0065 ,  H01L51/0068 ,  H01L51/0094 ,  H01L51/0545

Abstract: An organic thin film transistor containing a compound represented by the formula (1) in a semiconductor active layer has a high carrier mobility, a small change in the threshold voltage after repeated driving and a high solubility in an organic solvent. A1 and A2 represent S, O or Se; at least one of R1 to R6 represents a substituent represented by *-L-R wherein L represents a divalent linking group and R represents a hydrogen atom, an alkyl group, an oligooxyethylene group, an oligosiloxane group or a trialkylsilyl group.

Abstract translation: 在半导体活性层中含有式（1）表示的化合物的有机薄膜晶体管具有高的载流子迁移率，反复驱动后的阈值电压的小变化和在有机溶剂中的高溶解度。 A1和A2代表S，O或Se; R 1〜R 6中的至少一个表示由* -L-R表示的取代基，其中L表示二价连接基团，R表示氢原子，烷基，低聚氧乙烯基，低聚硅氧烷基或三烷基甲硅烷基。

公开(公告)号：US20160035984A1

公开(公告)日：2016-02-04

申请号：US14815269

申请日：2015-07-31

Applicant: FUJIFILM Corporation

Inventor： Koji TAKAKU ,  Yuki HIRAI ,  Wataru SOTOYAMA ,  Masaru KINOSHITA

IPC: H01L51/00 ,  C07D409/14 ,  C07D409/04 ,  C07D209/80

CPC classification number: H01L51/0072 ,  C07D209/80 ,  C07D409/04 ,  C07D409/14 ,  H01B1/121 ,  H01L51/0065 ,  H01L51/0067 ,  H01L51/0068 ,  H01L51/0545 ,  H01L51/0558

Abstract: An organic thin film transistor containing a compound represented by the following formula in a semiconductor active layer has a high carrier mobility and a small change in the threshold voltage after repeated driving. Z represents a substituent having a length of 3.7 Å or less, and at least one of R1 to R8 represents -L-R wherein L represents alkylene, etc., and R represents alkyl, etc.

Abstract translation: 在半导体活性层中含有下式表示的化合物的有机薄膜晶体管在反复驱动后具有高的载流子迁移率和阈值电压的小的变化。 Z表示长度为3.7以下的取代基，R 1〜R 8中的至少一个表示-L-R，其中L表示亚烷基等，R表示烷基等。

公开(公告)号：US20150218184A1

公开(公告)日：2015-08-06

申请号：US14685894

申请日：2015-04-14

Applicant: FUJIFILM Corporation

Inventor： Tetsu KITAMURA ,  Koji TAKAKU ,  Wataru SOTOYAMA

IPC: C07D493/04 ,  C09D125/06 ,  H01L51/00

CPC classification number: C07D493/04 ,  C07F7/0838 ,  C09D125/06 ,  H01L51/0035 ,  H01L51/0059 ,  H01L51/006 ,  H01L51/0061 ,  H01L51/0068 ,  H01L51/0073 ,  H01L51/0074 ,  H01L51/0094 ,  H01L51/0558

Abstract: An organic thin film transistor containing a compound represented by the formula (1) in a semiconductor active layer has a high carrier mobility and a small fluctuation of the threshold voltage after repeated driving. R1 to R12 represent a hydrogen atom or a substituent, provided that at least one of R1 to R12 represents a substituent represented by the formula (W), or all of R1 to R12 represent a hydrogen atom. * represents a position bonded to the naphthobisbenzofuran skeleton. L represents a single bond, a divalent linking group, an oligoethyleneoxy group having a repeating number of an ethyleneoxy unit of 2 or more, or an oligosiloxane group having 2 or more silicon atoms.

Abstract translation: 在半导体有源层中含有式（1）表示的化合物的有机薄膜晶体管在反复驱动后具有高的载流子迁移率和阈值电压的小的波动。 R 1〜R 12表示氢原子或取代基，条件是R 1至R 12中的至少一个表示由式（W）表示的取代基，或全部R 1至R 12表示氢原子。 *表示与萘并苯并呋喃骨架结合的位置。 L表示单键，二价连接基，乙氧基单元重复数为2以上的低聚亚乙基氧基或硅原子数为2以上的低聚硅氧烷。