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21 条记录 (耗时 0.055 秒)

    Apparatus and process for sensing target gas species in semiconductor processing systems
    6.
    发明授权
    Apparatus and process for sensing target gas species in semiconductor processing systems 有权
    用于在半导体处理系统中感测目标气体种类的装置和方法

    公开(公告)号：US07228724B2

    公开(公告)日：2007-06-12

    申请号：US10758825

    申请日：2004-01-16

    申请人： Philip S. H. Chen ,  Ing-Shin Chen ,  Frank Dimeo, Jr. ,  Jeffrey W. Neuner ,  James Welch ,  Jeffrey F. Roeder

    发明人： Philip S. H. Chen ,  Ing-Shin Chen ,  Frank Dimeo, Jr. ,  Jeffrey W. Neuner ,  James Welch ,  Jeffrey F. Roeder

    IPC分类号： G01N19/10

    CPC分类号： G01N27/128 ,  H01J37/3244 ,  H01J37/32935 ,  H01J37/32981

    摘要： A gas detector for detecting a fluoro gas species in a gaseous environment containing same, e.g., an effluent from a semiconductor processing tool that employs corrosive fluoro species such as HF, NF3, etc. for etch cleaning. The gas detector preferably employs an elongated nickel-containing gas sensor element that can be vertically mounted on a fluoro-resistant support structure. Since the nickel-containing gas sensor element is sensitive to the fluoro species and is also electrically conductive, it can function both as a sensing component and a heat source when elevated temperature sensing is required. Vertical mounting of such elongated gas sensor element on the support structure significantly improves the signal strength, reduces the response time, minimizes the footprint of the gas detector, and provides structural flexibility for accommodating thermal expansion/contraction of the elongated gas sensor element.

    摘要翻译： 一种气体检测器，用于在含有其的气体环境中检测氟气体物质，例如来自使用腐蚀性氟物质如HF，NF 3等的用于蚀刻清洁的半导体加工工具的流出物。 气体检测器优选使用可以垂直安装在耐氟支撑结构上的细长的含镍气体传感器元件。 由于含镍气体传感器元件对氟物质敏感并且也是导电的，所以当需要高温感测时，它可以用作感测部件和热源。 这种细长气体传感器元件在支撑结构上的垂直安装显着地改善了信号强度，减少了响应时间，使气体检测器的占地面积最小化，并提供了用于适应细长气体传感器元件的热膨胀/收缩的结构灵活性。

    Gas sensor with attenuated drift characteristic
    8.
    发明授权
    Gas sensor with attenuated drift characteristic 有权
    具有衰减漂移特性的气体传感器

    公开(公告)号：US07370511B1

    公开(公告)日：2008-05-13

    申请号：US10795529

    申请日：2004-03-08

    申请人： Ing-Shin Chen ,  Frank Dimeo, Jr. ,  Philip S. H. Chen ,  Jeffrey W. Neuner ,  James Welch ,  Bryan Hendrix

    发明人： Ing-Shin Chen ,  Frank Dimeo, Jr. ,  Philip S. H. Chen ,  Jeffrey W. Neuner ,  James Welch ,  Bryan Hendrix

    IPC分类号： G01N33/00

    CPC分类号： G01N33/005 ,  G01N27/128

    摘要： A sensor with an attenuated drift characteristic, including a layer structure in which a sensing layer has a layer of diffusional barrier material on at least one of its faces. The sensor may for example be constituted as a hydrogen gas sensor including a palladium/yttrium layer structure formed on a micro-hotplate base, with a chromium barrier layer between the yttrium layer and the micro-hotplate, and with a tantalum barrier layer between the yttrium layer and an overlying palladium protective layer. The gas sensor is useful for detection of a target gas in environments susceptible to generation or incursion of such gas, and achieves substantial (e.g., >90%) reduction of signal drift from the gas sensor in extended operation, relative to a corresponding gas sensor lacking the diffusional barrier structure of the invention.

    摘要翻译： 具有衰减漂移特性的传感器，包括其中感测层在其至少一个面上具有扩散阻挡材料层的层结构。 传感器例如可以构成为包括形成在微电镀基板上的钯/钇层结构的氢气传感器，钇层和微电镀板之间的铬阻挡层，以及在 钇层和覆盖钯保护层。 气体传感器可用于在易于产生或侵入这种气体的环境中检测目标气体，并且相对于相应的气体传感器在延长的操作中实现了从气体传感器的信号漂移的实质（例如，> 90％）的减小 缺乏本发明的扩散屏障结构。

    Method And Apparatus For Monitoring Plasma Conditions In An Etching Plasma Processing Facility
    9.
    发明申请
    Method And Apparatus For Monitoring Plasma Conditions In An Etching Plasma Processing Facility 审中-公开
    用于在蚀刻等离子体处理设备中监测等离子体条件的方法和装置

    公开(公告)号：US20080134757A1

    公开(公告)日：2008-06-12

    申请号：US11908668

    申请日：2006-03-15

    申请人： Ing-Shin Chen ,  Jeffrey W. Neuner ,  Frank Dimeo ,  Philip S.H. Chen ,  James J. Welch ,  Jeffrey F. Roeder

    发明人： Ing-Shin Chen ,  Jeffrey W. Neuner ,  Frank Dimeo ,  Philip S.H. Chen ,  James J. Welch ,  Jeffrey F. Roeder

    IPC分类号： G01N25/36

    CPC分类号： B81C1/00587 ,  B81C99/0065 ,  B81C2201/0138 ,  C23C16/4405 ,  G01N27/16 ,  H01J37/32935

    摘要： A gas sensor and method of gas sensing, e.g., of a type as useful with downstream sensor elements for determining the plasma conditions (e.g., plasma etching end point) in a semiconductor etching facility that utilizes halogen-containing plasma and/or oxygen-containing plasma. Such sensor elements are capable of exhibiting temperature change in the presence of energetic gas species, e.g., fluorine, chlorine, iodine, bromine, oxygen, and derivatives and radicals thereof that are generated by the plasma, and correspondingly generating an output signal indicative of such temperature change for determination of the plasma conditions in the etching plasma processing facility.

    摘要翻译： 一种气体传感器和气体传感方法，例如，对于使用含卤素等离子体和/或含氧的半导体蚀刻设备中用于确定等离子体条件（例如，等离子体蚀刻终点）的下游传感器元件有用的类型 等离子体。 这样的传感器元件能够在由等离子体产生的能量气体物质例如氟，氯，碘，溴，氧及其衍生物和自由基的存在下表现出温度变化，并且相应地产生指示其的输出信号 用于确定蚀刻等离子体处理设备中的等离子体条件的温度变化。

    Systems and Methods for Determination of Endpoint of Chamber Cleaning Processes
    10.
    发明申请
    Systems and Methods for Determination of Endpoint of Chamber Cleaning Processes 审中-公开
    用于确定腔室清洁过程端点的系统和方法

    公开(公告)号：US20080251104A1

    公开(公告)日：2008-10-16

    申请号：US12088825

    申请日：2006-10-03

    申请人： Ing-Shin Chen ,  Jeffrey W. Neuner ,  Jeffrey F. Roeder ,  Steven M. Bilodeau ,  Bryan C. Hendrix ,  Philip S.H. Chen

    发明人： Ing-Shin Chen ,  Jeffrey W. Neuner ,  Jeffrey F. Roeder ,  Steven M. Bilodeau ,  Bryan C. Hendrix ,  Philip S.H. Chen

    IPC分类号： B08B13/00

    CPC分类号： H01L21/67253 ,  C23C16/4405 ,  C23C16/52 ,  H01J37/32862 ,  H01J37/32935 ,  H01J37/32963 ,  H01L21/67069

    摘要： Apparatus and method for determination of the endpoint of a cleaning process in which cleaning fluid is contacted with a structure to effect cleaning thereof. The cleaning process includes contacting a cleaning fluid with a structure to be cleaned and producing a cleaning effluent having a sensible heat thermal energy characteristic corresponding to extent of cleaning of the structure, disposing an object in the cleaning effluent that interacts with the cleaning effluent to produce a response indicative of the sensible heat thermal energy characteristic of the cleaning effluent, and monitoring such response to determine when the cleaning is completed. An endpointing algorithm and endpoint monitoring are also described, as well as endpoint monitor sensor elements that are useful to determine endpoint conditions in an efficient and reproduceable manner.

    摘要翻译： 用于确定清洁过程的终点的装置和方法，其中清洁流体与结构接触以进行清洁。 清洁过程包括将清洁流体与要清洁的结构接触并产生具有对应于结构的清洁程度的显热热能特征的清洁流出物，将清洁物品放置在与清洁流出物相互作用的清洁流出物中以产生 指示清洁流出物的显热热能特征的响应，以及监测这种响应以确定何时完成清洁。 还描述了端点算法和端点监视，以及端点监视器传感器元件，其有效地以有效和可再现的方式确定端点条件。