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14 条记录 (耗时 0.025 秒)

    Wafer bonding of light emitting diode layers
    1.
    发明授权
    Wafer bonding of light emitting diode layers 失效
    发光二极管层的晶片结合

    公开(公告)号：US5502316A

    公开(公告)日：1996-03-26

    申请号：US542210

    申请日：1995-10-12

    申请人： Fred A. Kish ,  Frank M. Steranka ,  Dennis C. DeFevere ,  Virginia M. Robbins ,  John Uebbing

    发明人： Fred A. Kish ,  Frank M. Steranka ,  Dennis C. DeFevere ,  Virginia M. Robbins ,  John Uebbing

    IPC分类号： H01L21/02 ,  H01L21/20 ,  H01L21/60 ,  H01L25/075 ,  H01L33/00 ,  H01L33/14 ,  H01L33/30

    CPC分类号： H01L33/30 ,  H01L25/0756 ,  H01L33/005 ,  H01L33/0062 ,  H01L33/0079 ,  H01L33/0087 ,  H01L2924/0002 ,  H01L33/145

    摘要： A method of forming a light emitting diode (LED) includes providing a temporary growth substrate that is selected for compatibility with fabricating LED layers having desired mechanical characteristics. For example, lattice matching is an important consideration. LED layers are then grown on the temporary growth substrate. High crystal quality is thereby achieved, whereafter the temporary growth substrate can be removed. A second substrate is bonded to the LED layers utilizing a wafer bonding technique. The second substrate is selected for optical properties, rather than mechanical properties. Preferably, the second substrate is optically transparent and electrically conductive and the wafer bonding technique is carried out to achieve a low resistance interface between the second substrate and the LED layers. Wafer bonding can also be carried out to provide passivation or light-reflection or to define current flow.

    摘要翻译： 形成发光二极管（LED）的方法包括提供临时生长衬底，其被选择用于与制造具有期望的机械特性的LED层的相容性。 例如，晶格匹配是重要的考虑因素。 然后在临时生长衬底上生长LED层。 由此实现了高的晶体质量，之后可以去除临时生长衬底。 使用晶片接合技术将第二基板结合到LED层。 选择第二基板用于光学性能，而不是机械性能。 优选地，第二衬底是光学透明且导电的，并且执行晶片接合技术以实现第二衬底和LED层之间的低电阻界面。 还可以进行晶片结合以提供钝化或光反射或限定电流。

    Wafer bonding of light emitting diode layers
    2.
    发明授权
    Wafer bonding of light emitting diode layers 失效
    发光二极管层的晶片结合

    公开(公告)号：US5376580A

    公开(公告)日：1994-12-27

    申请号：US36532

    申请日：1993-03-19

    申请人： Fred A. Kish ,  Frank M. Steranka ,  Dennis C. DeFevere ,  Virginia M. Robbins ,  John Uebbing

    发明人： Fred A. Kish ,  Frank M. Steranka ,  Dennis C. DeFevere ,  Virginia M. Robbins ,  John Uebbing

    IPC分类号： H01L21/02 ,  H01L21/20 ,  H01L21/60 ,  H01L25/075 ,  H01L33/00 ,  H01L33/14 ,  H01L33/30

    CPC分类号： H01L33/30 ,  H01L25/0756 ,  H01L33/005 ,  H01L33/0062 ,  H01L33/0079 ,  H01L33/0087 ,  H01L2924/0002 ,  H01L33/145

    摘要： A method of forming a light emitting diode (LED) includes providing a temporary growth substrate that is selected for compatibility with fabricating LED layers having desired mechanical characteristics. For example, lattice matching is an important consideration. LED layers are then grown on the temporary growth substrate. High crystal quality is thereby achieved, whereafter the temporary growth substrate can be removed. A second substrate is bonded to the LED layers utilizing a wafer bonding technique. The second substrate is selected for optical properties, rather than mechanical properties. Preferably, the second substrate is optically transparent and electrically conductive and the wafer bonding technique is carried out to achieve a low resistance interface between the second substrate and the LED layers. Wafer bonding can also be carried out to provide passivation or light-reflection or to define current flow.

    摘要翻译： 形成发光二极管（LED）的方法包括提供临时生长衬底，其被选择用于与制造具有期望的机械特性的LED层的相容性。 例如，晶格匹配是重要的考虑因素。 然后在临时生长衬底上生长LED层。 由此实现了高的晶体质量，之后可以去除临时生长衬底。 使用晶片接合技术将第二基板结合到LED层。 选择第二基板用于光学性能，而不是机械性能。 优选地，第二衬底是光学透明且导电的，并且执行晶片接合技术以实现第二衬底和LED层之间的低电阻界面。 还可以进行晶片结合以提供钝化或光反射或限定电流。

    Edge-emitting LED assembly
    4.
    发明授权
    Edge-emitting LED assembly 有权
    边缘发光LED组件

    公开(公告)号：US07635874B2

    公开(公告)日：2009-12-22

    申请号：US11235592

    申请日：2005-09-26

    申请人： Jeffrey N. Miller ,  Steven D. Lester ,  Virginia M. Robbins

    发明人： Jeffrey N. Miller ,  Steven D. Lester ,  Virginia M. Robbins

    IPC分类号： H01L27/15 ,  H01L29/22

    CPC分类号： H01L33/46

    摘要： A light-emitting diode (LED) in accordance with the invention includes an edge-emitting LED stack having an external emitting surface from which light is emitted, and a reflective element that is located adjacent to at least one external surface of the LED stack other than the external emitting surface. The reflective element receives light that is generated inside the LED stack and reflects the received light back into the LED stack. At least a portion of the reflected light is then emitted from the external emitting surface.

    摘要翻译： 根据本发明的发光二极管（LED）包括具有发射光的外部发射表面的边缘发射LED堆叠以及与LED堆叠的至少一个外表面相邻的反射元件 比外部发光面。 反射元件接收在LED堆叠内产生的光，并将接收的光反射回LED堆叠。 反射光的至少一部分然后从外部发射表面发射。

    EDGE-EMITTING LED ASSEMBLY
    6.
    发明申请
    EDGE-EMITTING LED ASSEMBLY 审中-公开
    边缘发光LED组件

    公开(公告)号：US20100032703A1

    公开(公告)日：2010-02-11

    申请号：US12579494

    申请日：2009-10-15

    申请人： Jeffrey N. Miller ,  Steven D. Lester ,  Virginia M. Robbins

    发明人： Jeffrey N. Miller ,  Steven D. Lester ,  Virginia M. Robbins

    IPC分类号： H01L33/00

    CPC分类号： H01L33/46

    摘要： A light-emitting diode (LED) in accordance with the invention includes an edge-emitting LED stack having an external emitting surface from which light is emitted, and a reflective element that is located adjacent to at least one external surface of the LED stack other than the external emitting surface. The reflective element receives light that is generated inside the LED stack and reflects the received light back into the LED stack. At least a portion of the reflected light is then emitted from the external emitting surface.

    摘要翻译： 根据本发明的发光二极管（LED）包括具有发射光的外部发射表面的边缘发射LED堆叠以及与LED堆叠的至少一个外表面相邻的反射元件 比外部发光面。 反射元件接收在LED堆叠内产生的光并将接收的光反射回LED堆叠。 反射光的至少一部分然后从外部发射表面发射。

    Etching heterojunction interfaces
    8.
    发明授权
    Etching heterojunction interfaces 失效
    蚀刻异质结界面

    公开(公告)号：US06586113B1

    公开(公告)日：2003-07-01

    申请号：US09619418

    申请日：2000-07-19

    申请人： Sandeep R. Bahl ,  Yu-Min Houng ,  Virginia M. Robbins ,  Fred Sugihwo

    发明人： Sandeep R. Bahl ,  Yu-Min Houng ,  Virginia M. Robbins ,  Fred Sugihwo

    IPC分类号： B32B900

    CPC分类号： H01L21/3065 ,  Y10T428/12528 ,  Y10T428/12681

    摘要： Systems and methods of manufacturing etchable heterojunction interfaces and etched heterojunction structures are described. A bottom layer is deposited on a substrate, a transition etch layer is deposited over the bottom layer, and a top layer is deposited over the transition etch layer. The transition etch layer substantially prevents the bottom layer and the top layer from forming a material characterized by a composition substantially different than the bottom layer and a substantially non-selective etchability with respect to the bottom layer. By tailoring the structure of the heterojunction interface to respond to heterojunction etching processes with greater predictability and control, the transition etch layer enhances the robustness of previously unreliable heterojunction device manufacturing processes. The transition etch layer enables one or more vias to be etched down to the top surface of the bottom layer in a reliable and repeatable manner. In particular, because the transition etch layer enables use of an etchant that is substantially selective with respect to the bottom layer, the thickness of critical device layers may be determined by the precise epitaxial growth processes used to form the bottom layer rather than relatively imprecise non-selective etch processes.

    摘要翻译： 描述了制造可蚀刻异质结界面和蚀刻异质结结构的系统和方法。 底层沉积在衬底上，过渡蚀刻层沉积在底层上，顶层沉积在过渡蚀刻层上。 过渡蚀刻层基本上防止底层和顶层形成特征在于基本上不同于底层的组成和相对于底层的基本非选择性蚀刻性的材料。 通过调整异质结界面的结构以响应具有更大可预测性和控制性的异质结蚀刻工艺，过渡蚀刻层增强了先前不可靠的异质结器件制造工艺的鲁棒性。 过渡蚀刻层使得一个或多个通孔以可靠和可重复的方式被向下蚀刻到底层的顶表面。 特别地，由于过渡蚀刻层能够使用相对于底​​层基本选择性的蚀刻剂，关键器件层的厚度可以通过用于形成底层的精确的外延生长工艺来确定，而不是相对不精确的非 - 选择性蚀刻工艺。

    Electro-optical device with inverted transparent substrate and method for making same
    9.
    发明授权
    Electro-optical device with inverted transparent substrate and method for making same 失效
    带反转透明基板的电光装置及其制造方法

    公开(公告)号：US5115286A

    公开(公告)日：1992-05-19

    申请号：US663056

    申请日：1991-02-27

    申请人： Michael D. Camras ,  Louis W. Cook ,  Virginia M. Robbins

    发明人： Michael D. Camras ,  Louis W. Cook ,  Virginia M. Robbins

    IPC分类号： H01L33/00

    CPC分类号： H01L33/0025 ,  H01L33/0062

    摘要： An electro-optical device with a transparent substrate is produced by epitaxially first growing the active device layers, followed by growth of the transparent substrate layer on an opaque wafer. The opaque wafer is subsequently removed. The active device layers have dopants with sufficiently low diffusivities that their electronic characteristics are not adversely affected by long exposure to elevated temperature during the growth of the transparent substrate layer. In a liquid phase epitaxy (LPE) method, a repeated temperature cycle technique is used where the temperature is repeatedly raised each time after cooling to provide a large cooling range for growing a sufficiently thick substrate layer or a series of device layers. In between growths and during the temperature heat-up periods, the device is stored within the LPE reactor. When a epitaxial layer is oxidizable, a non-oxidizable cap is temporarily grown on it in between growths and during the temperature heat up periods. The cap is subsequently removed by melting back at an elevated temperature just prior to the growth of a next layer. The technique may also be used for growing a transparent substrate which is lattice mismatched with the active deivce layers.

    摘要翻译： 通过外延地生长有源器件层，然后在不透明晶片上生长透明衬底层，制造具有透明衬底的电光器件。 随后去除不透明晶片。 有源器件层具有足够低的扩散性的掺杂剂，使得它们的电子特性在透明衬底层的生长过程中长时间暴露于高温下不会受到不利影响。 在液相外延（LPE）方法中，使用重复的温度循环技术，其中每次冷却后温度重复升高，以提供用于生长足够厚的基底层或一系列器件层的大的冷却范围。 在生长和温度升温期之间，装置储存在LPE反应器内。 当外延层可氧化时，在生长之间和在升温期间暂时在其上生长不可氧化的盖。 随后在下一层生长之前在升高的温度下将盖除去。 该技术还可用于生长与活性活性层晶格失配的透明衬底。