公开(公告)号：US07495314B2

公开(公告)日：2009-02-24

申请号：US11234993

申请日：2005-09-26

申请人： Jeffrey N. Miller ,  David P. Bour ,  Virginia M. Robbins ,  Steven D. Lester

发明人： Jeffrey N. Miller ,  David P. Bour ,  Virginia M. Robbins ,  Steven D. Lester

IPC分类号： H01L29/22

CPC分类号： H01L21/28575 ,  H01L33/14 ,  H01L33/32 ,  H01L2924/0002 ,  H01L2924/00

摘要： An ohmic contact in accordance with the invention includes a layer of p-type GaN-based material. A first layer of a group II-VI compound semiconductor is located adjacent to the layer of p-type GaN-based material. The ohmic contact further includes a metal layer that provides metal contact. A second layer of a different II-VI compound semiconductor is located adjacent to the metal layer.

摘要翻译： 根据本发明的欧姆接触包括一层p型GaN基材料。 II-VI族化合物半导体的第一层位于邻近p型GaN基材料层的位置。 欧姆接触还包括提供金属接触的金属层。 不同的II-VI化合物半导体的第二层位于金属层附近。

公开(公告)号：US07473941B2

公开(公告)日：2009-01-06

申请号：US11203917

申请日：2005-08-15

申请人： Virginia M. Robbins ,  Steven D. Lester ,  Jeffrey N. Miller ,  David P. Bour

发明人： Virginia M. Robbins ,  Steven D. Lester ,  Jeffrey N. Miller ,  David P. Bour

IPC分类号： H01L33/00

CPC分类号： H01S5/305

摘要： A light-emitting device comprises an active region configured to generate light in response to injected charge, and an n-type material layer and a p-type material layer, wherein at least one of the n-type material layer and the p-type material layer is doped with at least two dopants, at least one of the dopants having an ionization energy higher than the ionization energy level of the other dopant.

摘要翻译： 发光装置包括响应于注入的电荷而被配置为产生光的有源区，以及n型材料层和p型材料层，其中n型材料层和p型材料层中的至少一种 材料层掺杂有至少两种掺杂剂，所述掺杂剂中的至少一种具有高于另一种掺杂剂的电离能级的电离能。

公开(公告)号：US20090179229A1

公开(公告)日：2009-07-16

申请号：US12356310

申请日：2009-01-20

申请人： Jeffrey N. Miller ,  David P. Bour ,  Virginia M. Robbins ,  Steven D. Lester

发明人： Jeffrey N. Miller ,  David P. Bour ,  Virginia M. Robbins ,  Steven D. Lester

IPC分类号： H01L29/22

CPC分类号： H01L21/28575 ,  H01L33/14 ,  H01L33/32 ,  H01L2924/0002 ,  H01L2924/00

摘要： An ohmic contact in accordance with the invention includes a layer of p-type GaN-based material. A first layer of a group II-VI compound semiconductor is located adjacent to the layer of p-type GaN-based material. The ohmic contact further includes a metal layer that provides metal contact. A second layer of a different II-VI compound semiconductor is located adjacent to the metal layer.

摘要翻译： 根据本发明的欧姆接触包括一层p型GaN基材料。 II-VI族化合物半导体的第一层位于邻近p型GaN基材料层的位置。 欧姆接触还包括提供金属接触的金属层。 不同的II-VI化合物半导体的第二层位于金属层附近。

公开(公告)号：US07502401B2

公开(公告)日：2009-03-10

申请号：US11187477

申请日：2005-07-22

申请人： Jeffrey N. Miller ,  Scott W. Corzine ,  David P. Bour

发明人： Jeffrey N. Miller ,  Scott W. Corzine ,  David P. Bour

IPC分类号： H01S5/00

CPC分类号： B82Y20/00 ,  H01S5/0424 ,  H01S5/0425 ,  H01S5/18341 ,  H01S5/18369 ,  H01S5/18383 ,  H01S5/2203 ,  H01S5/341 ,  H01S5/3428 ,  H01S5/34333 ,  H01S2304/12

摘要： The present invention provides a VCSEL system comprising forming a first mirror, forming a vertical cavity on the first mirror, the vertical cavity including integrated multiple gain regions and forming a transverse p/n junction laterally to the integrated multiple gain regions, wherein forward biasing the transverse p/n junction causes photon emission in the integrated multiple gain regions.

摘要翻译： 本发明提供了一种VCSEL系统，包括形成第一反射镜，在第一反射镜上形成垂直空腔，垂直空腔包括集成的多增益区域，并横向形成横向p / n接合到集成的多增益区域，其中向前偏置 横向p / n结在整合的多增益区域中引起光子发射。

公开(公告)号：US06771680B2

公开(公告)日：2004-08-03

申请号：US10278003

申请日：2002-10-22

申请人： David P. Bour ,  Jeffrey N. Miller ,  Steve Lester ,  Virginia Robbins

发明人： David P. Bour ,  Jeffrey N. Miller ,  Steve Lester ,  Virginia Robbins

IPC分类号： H01S500

CPC分类号： H01S5/18341 ,  B82Y20/00 ,  H01S5/0425 ,  H01S5/18308 ,  H01S5/18311 ,  H01S5/1833 ,  H01S5/18358 ,  H01S5/18366 ,  H01S5/18369 ,  H01S5/18383 ,  H01S5/18397 ,  H01S5/3095 ,  H01S5/34306 ,  H01S5/426 ,  H01S2301/176

摘要： An electrically-pumped vertical-cavity surface-emitting laser (VCSEL) has multiple active regions. Embodiments of the invention provide an electrically-pumped VCSEL having a number of different p-i-n junction and electrode arrangements, which, in various embodiments, allow independent biasing of the multiple active regions, and, in other embodiments, allow simplified electrical connections.

摘要翻译： 电泵浦垂直腔表面发射激光器（VCSEL）具有多个有源区域。 本发明的实施例提供具有多个不同p-i-n结和电极布置的电泵浦VCSEL，其在各种实施例中允许多个有源区域的独立偏置，并且在其它实施例中允许简化的电连接。

公开(公告)号：US09834860B2

公开(公告)日：2017-12-05

申请号：US12904090

申请日：2010-10-13

申请人： Lori D. Washington ,  David P. Bour ,  Gregg Higashi ,  Gang He

发明人： Lori D. Washington ,  David P. Bour ,  Gregg Higashi ,  Gang He

IPC分类号： C30B25/16 ,  C30B25/02 ,  C30B25/18 ,  C30B29/40 ,  C30B29/42 ,  H01L21/02

CPC分类号： C30B25/02 ,  C30B25/183 ,  C30B29/40 ,  C30B29/42 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/0254 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0262

摘要： Embodiments of the invention generally relate processes for epitaxial growing Group III/V materials at high growth rates, such as about 30 μm/hr or greater, for example, about 40 μm/hr, about 50 μm/hr, about 55 μm/hr, about 60 μm/hr, or greater. The deposited Group III/V materials or films may be utilized in solar, semiconductor, or other electronic device applications. In some embodiments, the Group III/V materials may be formed or grown on a sacrificial layer disposed on or over the support substrate during a vapor deposition process. Subsequently, the Group III/V materials may be removed from the support substrate during an epitaxial lift off (ELO) process. The Group III/V materials are thin films of epitaxially grown layers which contain gallium arsenide, gallium aluminum arsenide, gallium indium arsenide, gallium indium arsenide nitride, gallium aluminum indium phosphide, phosphides thereof, nitrides thereof, derivatives thereof, alloys thereof, or combinations thereof.

公开(公告)号：US09093395B2

公开(公告)日：2015-07-28

申请号：US13225345

申请日：2011-09-02

申请人： David P. Bour ,  Linda Romano ,  Thomas R. Prunty ,  Isik C. Kizilyalli ,  Hui Nie ,  Andrew P. Edwards ,  Richard J. Brown

发明人： David P. Bour ,  Linda Romano ,  Thomas R. Prunty ,  Isik C. Kizilyalli ,  Hui Nie ,  Andrew P. Edwards ,  Richard J. Brown

IPC分类号： H01L29/20 ,  H01L21/302 ,  H01L29/32 ,  H01L29/66 ,  H01L29/808 ,  H01L29/861 ,  H01L29/872

CPC分类号： H01L29/32 ,  H01L21/02389 ,  H01L21/0254 ,  H01L29/2003 ,  H01L29/6609 ,  H01L29/66143 ,  H01L29/66212 ,  H01L29/66446 ,  H01L29/66909 ,  H01L29/66924 ,  H01L29/8083 ,  H01L29/861 ,  H01L29/872

摘要： A diode includes a substrate characterized by a first dislocation density and a first conductivity type, a first contact coupled to the substrate, and a masking layer having a predetermined thickness and coupled to the semiconductor substrate. The masking layer comprises a plurality of continuous sections and a plurality of openings exposing the substrate and disposed between the continuous sections. The diode also includes an epitaxial layer greater than 5 μm thick coupled to the substrate and the masking layer. The epitaxial layer comprises a first set of regions overlying the plurality of openings and characterized by a second dislocation density and a second set of regions overlying the set of continuous sections and characterized by a third dislocation density less than the first dislocation density and the second dislocation density. The diode further includes a second contact coupled to the epitaxial layer.

摘要翻译： 二极管包括以第一位错密度和第一导电类型为特征的衬底，耦合到衬底的第一触点和具有预定厚度并耦合到半导体衬底的掩模层。 掩模层包括多个连续部分和暴露基板并设置在连续部分之间的多个开口。 二极管还包括大于5μm厚的外延层，其与衬底和掩模层耦合。 外延层包括覆盖多个开口的第一组区域，其特征在于第二位错密度和覆盖该组连续区段的第二组区域，其特征在于第三位错密度小于第一位错密度和第二位错 密度。 二极管还包括耦合到外延层的第二接触。

公开(公告)号：US09076827B2

公开(公告)日：2015-07-07

申请号：US13230573

申请日：2011-09-12

申请人： David P. Bour ,  Alain Duboust ,  Alexey Goder

发明人： David P. Bour ,  Alain Duboust ,  Alexey Goder

IPC分类号： C30B25/16 ,  C30B25/08 ,  C30B25/10 ,  C23C16/06 ,  C23C16/52 ,  H01L21/67 ,  G01K11/20 ,  H01L21/66 ,  H01L21/02 ,  H01L33/00

CPC分类号： H01L33/0075 ,  C30B25/16 ,  C30B29/40 ,  G01K11/20 ,  G01K2217/00 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/67196 ,  H01L21/67248 ,  H01L22/12 ,  H01L22/26 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/06 ,  H01L33/32 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008

摘要： Apparatus and method for control of epitaxial growth parameters, for example during manufacture of light emitting diodes (LEDs). Embodiments include PL measurement of a group III-V film following growth while a substrate at an elevated temperature is in a transfer chamber of a multi-chamber cluster tool. In other embodiments, a film thickness measurement, a contactless resistivity measurement, and a particle and/or roughness measure is performed while the substrate is disposed in the transfer chamber. One or more of the measurements performed in the transfer chamber are temperature corrected to room temperature by estimating the elevated temperature based on emission from a GaN base layer disposed below the group III-V film. In other embodiments, temperature correction is based on an absorbance band edge of the GaN base layer determined from collected white light reflectance spectra. Temperature corrected metrology is then used to control growth processes.

摘要翻译： 用于控制外延生长参数的设备和方法，例如在制造发光二极管（LED）期间。 实施例包括生长后的III-V族薄膜的PL测量，而在高温下的基底处于多腔聚集工具的转移室中。 在其它实施例中，在衬底设置在传送室中的同时，执行膜厚度测量，非接触电阻率测量以及颗粒和/或粗糙度测量。 通过基于从设置在III-V族III膜以下的GaN基底层的发射来估计升高的温度，在传送室中执行的一个或多个测量值被温度校正到室温。 在其他实施例中，温度校正基于由所收集的白光反射光谱确定的GaN基底层的吸收带边缘。 然后使用温度校正计量来控制生长过程。

公开(公告)号：US20130292686A1

公开(公告)日：2013-11-07

申请号：US13465812

申请日：2012-05-07

申请人： Isik C. Kizilyalli ,  Linda Romano ,  David P. Bour

发明人： Isik C. Kizilyalli ,  Linda Romano ,  David P. Bour

IPC分类号： H01L29/20 ,  H01L21/337 ,  H01L21/20

CPC分类号： H01L29/66924 ,  H01L29/2003 ,  H01L29/66446 ,  H01L29/7832 ,  H01L29/8083

摘要： A vertical JFET includes a III-nitride substrate and a III-nitride epitaxial layer of a first conductivity type coupled to the III-nitride substrate. The first III-nitride epitaxial layer has a first dopant concentration. The vertical JFET also includes a III-nitride epitaxial structure coupled to the first III-nitride epitaxial layer. The III-nitride epitaxial structure includes a set of channels of the first conductivity type and having a second dopant concentration, a set of sources of the first conductivity type, having a third dopant concentration greater than the first dopant concentration, and each characterized by a contact surface, and a set of regrown gates interspersed between the set of channels. An upper surface of the set of regrown gates is substantially coplanar with the contact surfaces of the set of sources.

公开(公告)号：US20130087879A1

公开(公告)日：2013-04-11

申请号：US13270641

申请日：2011-10-11

申请人： Andrew Edwards ,  Hui Nie ,  Isik C. Kizilyalli ,  Richard J. Brown ,  David P. Bour ,  Linda Romano ,  Thomas R. Prunty

发明人： Andrew Edwards ,  Hui Nie ,  Isik C. Kizilyalli ,  Richard J. Brown ,  David P. Bour ,  Linda Romano ,  Thomas R. Prunty

IPC分类号： H01L29/47 ,  H01L21/20

CPC分类号： H01L29/66143 ,  H01L21/26546 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0692 ,  H01L29/08 ,  H01L29/2003 ,  H01L29/404 ,  H01L29/66083 ,  H01L29/66204 ,  H01L29/66212 ,  H01L29/66416 ,  H01L29/66924 ,  H01L29/8083 ,  H01L29/868 ,  H01L29/872

摘要： A semiconductor structure includes a III-nitride substrate characterized by a first conductivity type and having a first side and a second side opposing the first side, a III-nitride epitaxial layer of the first conductivity type coupled to the first side of the III-nitride substrate, and a plurality of III-nitride epitaxial structures of a second conductivity type coupled to the III-nitride epitaxial layer. The semiconductor structure further includes a III-nitride epitaxial formation of the first conductivity type coupled to the plurality of III-nitride epitaxial structures, and a metallic structure forming a Schottky contact with the III-nitride epitaxial formation and coupled to at least one of the plurality of III-nitride epitaxial structures.