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    Electrode substrate, thin-film transistor, display and its production method
    6.
    发明授权
    Electrode substrate, thin-film transistor, display and its production method 失效
    电极基板，薄膜晶体管，显示器及其制作方法

    公开(公告)号：US07521716B2

    公开(公告)日：2009-04-21

    申请号：US10569834

    申请日：2004-08-18

    申请人： Masahiko Ando ,  Masaya Adachi ,  Hiroshi Sasaki ,  Masatoshi Wakagi

    发明人： Masahiko Ando ,  Masaya Adachi ,  Hiroshi Sasaki ,  Masatoshi Wakagi

    IPC分类号： H01L29/04

    CPC分类号： H01L51/0541 ,  H01L27/124 ,  H01L27/1292 ,  H01L29/66765 ,  H01L29/78678 ,  H01L51/0021

    摘要： Using a lower electrode as a photomask, a lyophobic region having generally the same pattern as that of the lower electrode and a lyophilic region having a pattern which is generally the inversion of the lower electrode pattern are formed on an insulating film. A conductive ink is applied to the lyophobic region and baked. Thus, an upper electrode having a pattern which is generally the inversion of the lower electrode pattern is formed in a self-alignment manner. Therefore no misalignment occurs even if a printing method is used. Thus, a semiconductor device such as an active-matrix thin-film transistor substrate can be fabricated by using a printing method.

    摘要翻译： 使用下部电极作为光掩模，在绝缘膜上形成通常具有与下部电极相同图案的疏液区域和具有通常为下部电极图案的反转的图案的亲液性区域。 将导电油墨施加到疏液区域并烘烤。 因此，具有通常为下电极图案的反转的图案的上电极以自对准方式形成。 因此，即使使用打印方法也不会发生错位。 因此，可以通过使用印刷方法来制造诸如有源矩阵薄膜晶体管基板的半导体器件。

    Electrode substrate, thin film transistor, display device and their production
    7.
    发明授权
    Electrode substrate, thin film transistor, display device and their production 失效
    电极基板，薄膜晶体管，显示装置及其制作

    公开(公告)号：US07394095B2

    公开(公告)日：2008-07-01

    申请号：US11501489

    申请日：2006-08-08

    申请人： Masahiko Ando ,  Masaya Adachi ,  Hiroshi Sasaki ,  Masatoshi Wakagi

    发明人： Masahiko Ando ,  Masaya Adachi ,  Hiroshi Sasaki ,  Masatoshi Wakagi

    IPC分类号： H01L29/08

    CPC分类号： H01L51/0541 ,  H01L27/124 ,  H01L27/1292 ,  H01L29/66765 ,  H01L29/78678 ,  H01L51/0021

    摘要： In the present invention, a lower electrode is utilized as a photomask to form a liquid-repellent region having a generally same pattern shape as that of the lower electrode and a liquid-attracting region having a generally reversed pattern shape on an insulating film. A conductive ink is coated and calcined in the liquid-attracting region to form an upper electrode having a generally reversed pattern shape to the lower electrode in a self-aligned manner, eliminating the occurrence of misregistration even when a printing method is used. Consequently, semiconductor devices such as an active matrix thin film transistor substrate can be formed using a printing method.

    摘要翻译： 在本发明中，下电极用作光掩模，以形成具有与下电极大致相同图案形状的疏液区域和在绝缘膜上具有大致反转图案形状的吸液区域。 导电油墨在吸液区域被涂覆和煅烧，以自对准的方式形成具有与下电极大致相反的图案形状的上电极，消除了即使使用打印方法时发生配准。 因此，可以使用印刷方法形成诸如有源矩阵薄膜晶体管基板的半导体器件。

    Thin film transistor, display device and their production
    9.
    发明授权
    Thin film transistor, display device and their production 失效
    薄膜晶体管，显示装置及其制作

    公开(公告)号：US07202496B2

    公开(公告)日：2007-04-10

    申请号：US10970224

    申请日：2004-10-21

    申请人： Masahiko Ando ,  Masatoshi Wakagi ,  Hiroshi Sasaki

    发明人： Masahiko Ando ,  Masatoshi Wakagi ,  Hiroshi Sasaki

    IPC分类号： H01L35/24 ,  H01L21/4763

    CPC分类号： H01L51/0545 ,  B82Y10/00 ,  B82Y30/00 ,  H01L51/0012 ,  H01L51/0021 ,  H01L51/0023 ,  H01L51/0036 ,  H01L51/0039 ,  H01L51/0533

    摘要： The present method prevents malfunctions in switching caused by a light leakage current in an active matrix type thin film transistor substrate for a liquid crystal display and prevents display failures, by selectively disposing a self assembled monolayer film in a gate electrode-projected region of the surface of an insulator film with high definition, and by selectively improving the orientation order of an organic semiconductor film only in the gate electrode-projected region without improving the order at an irradiated portion with light outside the gate electrode-projected region.

    摘要翻译： 本方法通过在表面的栅极电极投影区域中选择性地配置自组装单层膜来防止由液晶显示器的有源矩阵型薄膜晶体管基板中的漏光电流引起的切换中的故障，并且防止显示故障 具有高清晰度的绝缘体膜，并且仅通过选择性地改善栅极电极投影区域中的有机半导体膜的取向顺序，而不改善栅极电极投影区域外的光的照射部分的阶数。