公开(公告)号：US09459797B2

公开(公告)日：2016-10-04

申请号：US14153728

申请日：2014-01-13

Applicant: GLOBALFOUNDRIES INC.

Inventor： Christos Dimitrakopoulos ,  Augustin J. Hong ,  Jeehwan Kim ,  Devendra K. Sadana ,  Kuen-Ting Shiu

IPC: H01L31/02 ,  G06F3/06 ,  H04W8/06 ,  H01L31/0236 ,  G06F11/07 ,  G06F12/02 ,  H04L29/08 ,  G06F11/10 ,  H04W8/04

CPC classification number: G06F3/061 ,  G06F3/064 ,  G06F3/0647 ,  G06F3/0653 ,  G06F3/0689 ,  G06F11/0727 ,  G06F11/1076 ,  G06F12/02 ,  H01L31/02366 ,  H04L67/1002 ,  H04W8/04 ,  H04W8/065 ,  Y02E10/50

Abstract: A method for fabricating a photovoltaic device includes applying a diblock copolymer layer on a substrate and removing a first polymer material from the diblock copolymer layer to form a plurality of distributed pores. A pattern forming layer is deposited on a remaining surface of the diblock copolymer layer and in the pores in contact with the substrate. The diblock copolymer layer is lifted off and portions of the pattern forming layer are left in contact with the substrate. The substrate is etched using the pattern forming layer to protect portions of the substrate to form pillars in the substrate such that the pillars provide a radiation absorbing structure in the photovoltaic device.

Abstract translation: 一种制造光伏器件的方法包括在基片上涂布二嵌段共聚物层，并从二嵌段共聚物层除去第一聚合物材料以形成多个分布孔。 图案形成层沉积在二嵌段共聚物层的剩余表面上和与基材接触的孔中。 剥离二嵌段共聚物层，使图案形成层的一部分与基板保持接触。 使用图案形成层蚀刻衬底以保护衬底的部分以在衬底中形成柱，使得柱在光伏器件中提供辐射吸收结构。

公开(公告)号：US09236477B2

公开(公告)日：2016-01-12

申请号：US14181832

申请日：2014-02-17

Applicant: GLOBALFOUNDRIES INC.

Inventor： Jack O. Chu ,  Christos Dimitrakopoulos ,  Eric C. Harley ,  Judson R. Holt ,  Timothy J. McArdle ,  Matthew W. Stoker

IPC: H01L29/78 ,  H01L29/16 ,  H01L21/02 ,  H01L21/324 ,  H01L29/66 ,  H01L29/06

CPC classification number: H01L29/785 ,  H01L21/0243 ,  H01L21/02447 ,  H01L21/02527 ,  H01L21/02612 ,  H01L21/02639 ,  H01L21/324 ,  H01L29/0649 ,  H01L29/1606 ,  H01L29/1608 ,  H01L29/66037 ,  H01L29/66795 ,  H01L29/7781

Abstract: Silicon-carbon alloy structures can be formed as inverted U-shaped structures around semiconductor fins by a selective epitaxy process. A planarization dielectric layer is formed to fill gaps among the silicon-carbon alloy structures. After planarization, remaining vertical portions of the silicon-carbon alloy structures constitute silicon-carbon alloy fins, which can have sublithographic widths. The semiconductor fins may be replaced with replacement dielectric material fins. In one embodiment, employing a patterned mask layer, sidewalls of the silicon-carbon alloy fins can be removed around end portions of each silicon-carbon alloy fin. An anneal is performed to covert surface portions of the silicon-carbon alloy fins into graphene layers. In one embodiment, each graphene layer can include only a horizontal portion in a channel region, and include a horizontal portion and sidewall portions in source and drain regions. If a patterned mask layer is not employed, each graphene layer can include only a horizontal portion.

Abstract translation: 硅碳合金结构可以通过选择性外延工艺形成为围绕半导体翅片的倒U形结构。 形成平坦化介电层以填充硅 - 碳合金结构之间的间隙。 在平坦化之后，硅 - 碳合金结构的剩余垂直部分构成可以具有亚光刻宽度的硅碳合金翅片。 半导体翅片可以用替换的介质材料翅片代替。 在一个实施例中，采用图案化掩模层，可以在每个硅 - 碳合金散热片的端部周围除去硅 - 碳合金散热片的侧壁。 执行退火以将硅碳合金翅片的表面部分隐藏成石墨烯层。 在一个实施例中，每个石墨烯层可以仅包括沟道区域中的水平部分，并且在源极和漏极区域中包括水平部分和侧壁部分。 如果不使用图案化掩模层，则每个石墨烯层可以仅包括水平部分。