公开(公告)号：US09251978B2

公开(公告)日：2016-02-02

申请号：US13875394

申请日：2013-05-02

Applicant: GLOBALFOUNDRIES INC.

Inventor： Qing Cao ,  Kangguo Cheng ,  Zhengwen Li ,  Fei Liu ,  Zhen Zhang

IPC: G01N27/404 ,  H01H29/02 ,  G01N33/00 ,  G01N15/10 ,  G01N27/327 ,  G01N27/447

CPC classification number: H01H29/02 ,  G01N15/1031 ,  G01N27/3278 ,  G01N27/404 ,  G01N27/44795 ,  G01N33/0009 ,  Y10T29/49117

Abstract: Electromechanical sensors that employ Janus micro/nano-components and techniques for the fabrication thereof are provided. In one aspect, a method of fabricating an electromechanical sensor includes the following steps. A back gate is formed on a substrate. A gate dielectric is deposited over the back gate. An intermediate layer is formed on the back gate having a micro-fluidic channel formed therein. Top electrodes are formed above the micro-fluidic channel. One or more Janus components are placed in the micro-fluidic channel, wherein each of the Janus components has a first portion having an electrically conductive material and a second portion having an electrically insulating material. The micro-fluidic channel is filled with a fluid. The electrically insulating material has a negative surface charge at a pH of the fluid and an isoelectric point at a pH less than the pH of the fluid.

Abstract translation: 提供采用Janus微/纳米组件的机电传感器及其制造技术。 一方面，制造机电传感器的方法包括以下步骤。 在基板上形成背栅。 栅极电介质沉积在背栅上。 在背栅上形成中间层，其中形成有微流体通道。 顶部电极形成在微流体通道上方。 一个或多个Janus部件被放置在微流体通道中，其中Janus部件中的每一个具有具有导电材料的第一部分和具有电绝缘材料的第二部分。 微流体通道充满流体。 电绝缘材料在流体的pH下具有负的表面电荷，并且在pH小于流体的pH的pH下具有等电点。

公开(公告)号：US09292888B2

公开(公告)日：2016-03-22

申请号：US13930536

申请日：2013-06-28

Applicant: GLOBALFOUNDRIES INC.

Inventor： Lianjun An ,  Young T. Chae ,  Young Min Lee ,  Fei Liu ,  Rui Zhang

IPC: G06F7/60 ,  G06F17/10 ,  G06Q50/06 ,  G06Q10/04

CPC classification number: G06Q50/06 ,  G06Q10/04

Abstract: A predictive model for building energy consumption may be constructed and run to predict energy consumption in a building or to detect anomaly in energy consumption in a building or combinations thereof. Historic energy consumption data associated with energy consumed in a building may be received. Enthalpy of air outside the building may be determined. An energy consumption model may be calibrated based on the historic energy consumption data and the enthalpy of air outside the building. The energy consumption model incorporates enthalpy difference between a balance enthalpy and the enthalpy of air outside the building.

Abstract translation: 可以构建并运行用于建筑物能量消耗的预测模型来预测建筑物中的能量消耗或检测建筑物的能量消耗异常或其组合。 可以接收与建筑物中消耗的能量相关联的历史能量消耗数据。 建筑物外面的空气可能会被确定。 可以基于历史能耗数据和建筑物外的空气焓来校准能量消耗模型。 能量消耗模型结合了平衡焓和建筑外部空气焓之间的焓差。

公开(公告)号：US09389319B2

公开(公告)日：2016-07-12

申请号：US14699557

申请日：2015-04-29

Applicant: GLOBALFOUNDRIES INC.

Inventor： Qing Cao ,  Kangguo Cheng ,  Zhengwen Li ,  Fei Liu ,  Zhen Zhang

IPC: G01T1/04 ,  G01T1/06

CPC classification number: G01T1/06

Abstract: A method for colorimetric radiation dosimetry includes subjecting an aggregate including a polymeric matrix having uniformly dispersed nanoparticles therein to radiation. The aggregate is soaked in a solution selected to dissolve decomposed pieces of the polymeric matrix to release into the solution nanoparticles from the decomposed pieces. Color of the solution is compared to a reference to determine a dose of radiation based on number of liberated nanoparticles.

公开(公告)号：US09251979B2

公开(公告)日：2016-02-02

申请号：US14010945

申请日：2013-08-27

Applicant: GLOBALFOUNDRIES INC.

Inventor： Qing Cao ,  Kangguo Cheng ,  Zhengwen Li ,  Fei Liu ,  Zhen Zhang

IPC: G01N27/404 ,  H01H29/02 ,  G01N33/00 ,  G01N15/10 ,  G01N27/327 ,  G01N27/447

CPC classification number: H01H29/02 ,  G01N15/1031 ,  G01N27/3278 ,  G01N27/404 ,  G01N27/44795 ,  G01N33/0009 ,  Y10T29/49117

Abstract: Electromechanical sensors that employ Janus micro/nano-components and techniques for the fabrication thereof are provided. In one aspect, a method of fabricating an electromechanical sensor includes the following steps. A back gate is formed on a substrate. A gate dielectric is deposited over the back gate. An intermediate layer is formed on the back gate having a micro-fluidic channel formed therein. Top electrodes are formed above the micro-fluidic channel. One or more Janus components are placed in the micro-fluidic channel, wherein each of the Janus components has a first portion having an electrically conductive material and a second portion having an electrically insulating material. The micro-fluidic channel is filled with a fluid. The electrically insulating material has a negative surface charge at a pH of the fluid and an isoelectric point at a pH less than the pH of the fluid.

公开(公告)号：US09505611B1

公开(公告)日：2016-11-29

申请号：US14814083

申请日：2015-07-30

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Fei Liu ,  Qiqing C. Ouyang ,  Keith Kwong Hon Wong

IPC: B81C1/00 ,  H01L29/66 ,  B81B7/00

CPC classification number: B81C1/00246 ,  B81B7/008 ,  B81B2203/0118 ,  B81B2207/015 ,  B81B2207/07 ,  B81C2201/0132 ,  B81C2201/056 ,  B81C2203/0714 ,  H01L27/0617 ,  H01L29/66545

Abstract: Semiconductor devices and methods are provided for integrally forming electromechanical devices (e.g. MEMS or NEMS devices) with CMOS devices in a FEOL (front-end-of-line) structure as part of a replacement metal gate process flow. For example, a method includes forming an electromechanical device in a first device region of a substrate and forming a transistor device in a second device region of the substrate. The electromechanical device includes a sacrificial anchor structure and a sacrificial cantilever structure formed of a sacrificial material. The transistor device includes a sacrificial gate electrode structure formed of the sacrificial material. A replacement metal gate process is performed to replace the sacrificial gate electrode structure of the transistor device with a metallic gate electrode, and to replace the sacrificial anchor structure and the sacrificial cantilever structure with a metallic anchor structure and a metallic cantilever structure. A release process is performed to release the metallic cantilever structure.

Abstract translation: 提供半导体器件和方法，用于在作为替代金属栅极工艺流程的一部分的FEOL（前端线）结构中与CMOS器件一体地形成机电装置（例如MEMS或NEMS器件）。 例如，一种方法包括在衬底的第一器件区域中形成机电器件，并在衬底的第二器件区域中形成晶体管器件。 机电装置包括牺牲锚结构和由牺牲材料形成的牺牲悬臂结构。 晶体管器件包括由牺牲材料形成的牺牲栅电极结构。 执行替换金属栅极处理以用金属栅极电极代替晶体管器件的牺牲栅电极结构，并用金属锚结构和金属悬臂结构代替牺牲锚结构和牺牲悬臂结构。 执行释放过程以释放金属悬臂结构。