Method for calculating non-correctable EUV blank flatness for blank dispositioning

    公开(公告)号:US10552569B2

    公开(公告)日:2020-02-04

    申请号:US15868364

    申请日:2018-01-11

    Abstract: The present disclosure generally relates to semiconductor structures and, more particularly, to mask structures and methods of manufacture. The method includes determining a plane through a frontside surface and a backside surface of a mask, each plane representing a flatness of the frontside surface and the backside surface, respectively; subtracting, using at least one computing device, a difference between the plane of the frontside surface and the plane of the backside surface to find a thickness variation; generating, using the at least one computing device, a fitting to fit the thickness variation; and subtracting, using the at least one computing device, the fitting from the thickness variation to generate a residual structure for collecting a residual flatness measurement.

    STRUCTURE AND METHOD TO MEASURE FOCUS-DEPENDENT PATTERN SHIFT IN INTEGRATED CIRCUIT IMAGING

    公开(公告)号:US20180033590A1

    公开(公告)日:2018-02-01

    申请号:US15222096

    申请日:2016-07-28

    CPC classification number: H01J37/26

    Abstract: Various embodiments include measurement structures and methods for measuring integrated circuit (IC) images. In some cases, a measurement structure for use in measuring an image of an IC, includes: a first section having a positive shift spacing pattern; a second section, on an opposite side of the measurement structure, having a negative shift spacing pattern; and a third section having a reference spacing pattern for calibrating a measurement from at least one of the first section or the second section.

    Differential dose and focus monitor
    6.
    发明授权
    Differential dose and focus monitor 有权
    差分剂量和聚焦监视器

    公开(公告)号:US09411249B2

    公开(公告)日:2016-08-09

    申请号:US14033593

    申请日:2013-09-23

    CPC classification number: G03F7/70641 G03F7/70625 G03F7/70683 G03F9/7026

    Abstract: A dose and focus monitor structure includes at least one complementary set of unit dose monitors and at least one complementary set of unit focus monitors. Each complementary set of unit dose monitors generate edges on a photoresist layer such that the edges move in opposite directions as a function of a dose offset. Each complementary set of unit focus monitors generates edges on the photoresist layer such that the edges move in opposite directions as a function of a focus offset. The dose and focus monitor structure generates self-compensating differential measurements of the dose offset and the focus offset such that the dose offset measurement and the focus offset measurement are independent of each other.

    Abstract translation: 剂量和聚焦监测器结构包括至少一个互补的单位剂量监测器组和至少一个互补的单位焦点监测器组。 每个补充的单位剂量监测器组在光致抗蚀剂层上产生边缘,使得边缘作为剂量偏移的函数沿相反方向移动。 每个互补的单元聚焦监视器组在光致抗蚀剂层上产生边缘,使得边缘作为聚焦偏移的函数沿相反方向移动。 剂量和聚焦监测结构产生剂量偏移和聚焦偏移的自补偿差分测量,使得剂量偏移测量和聚焦偏移测量彼此独立。

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