公开(公告)号：US09960207B1

公开(公告)日：2018-05-01

申请号：US15292445

申请日：2016-10-13

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Sunit S. Mahajan

IPC: H01L43/02 ,  H01L27/22 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

CPC classification number: H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: Structures including a spin torque transfer magnetic tunnel junction (MTJ) stack and methods for fabricating same. A first contact is coupled with a first portion of a free layer of the MTJ stack, and a second contact is coupled with a second portion of the free layer of the MTJ stack. The free layer is laterally arranged between the first contact and the second contact.

公开(公告)号：US09589965B1

公开(公告)日：2017-03-07

申请号：US15004216

申请日：2016-01-22

Applicant: GLOBALFOUNDRIES INC.

Inventor： Melissa A. Smith ,  Sunit S. Mahajan ,  Herbert L. Ho

IPC: H01L27/108

CPC classification number: H01L27/1087 ,  H01L27/10826 ,  H01L27/10832 ,  H01L27/10879

Abstract: Methods of forming polysilicon-filled deep trenches for an eDRAM are provided. The method may include forming a plurality of polysilicon-filled deep trenches in a substrate. An epitaxy-retarding dopant is introduced to an upper portion of the trenches. A plurality of fins are then formed over the substrate, with each polysilicon-filled deep trench including a corresponding fin extending thereover. A silicon layer is epitaxially grown over at least the polysilicon-filled deep trench. The dopant in the polysilicon-filled deep trenches acts to control the epitaxial growth of the silicon layer, diminishing or preventing shorts to adjacent fins and/or deep trenches at advanced technology nodes.

Abstract translation: 提供了形成用于eDRAM的多晶硅填充深沟槽的方法。 该方法可以包括在衬底中形成多个多晶硅填充的深沟槽。 将外延延迟掺杂剂引入到沟槽的上部。 然后在衬底上形成多个翅片，其中每个多晶硅填充的深沟槽包括在其上延伸的对应的鳍。 至少在多晶硅填充的深沟槽上外延生长硅层。 在多晶硅填充的深沟槽中的掺杂剂用于控制硅层的外延生长，减少或防止在先进技术节点处的相邻鳍片和/或深沟槽的短路。

公开(公告)号：US09741581B2

公开(公告)日：2017-08-22

申请号：US14992391

申请日：2016-01-11

Applicant: GLOBALFOUNDRIES INC.

Inventor： Sunit S. Mahajan ,  Parul Dhagat ,  Anne C. Friedman ,  Timothy A. Brunner ,  Shahrukh A. Khan

IPC: H01L29/06 ,  H01L21/308 ,  H01L21/306 ,  H01L21/8234 ,  H01L27/088

CPC classification number: H01L21/3081 ,  H01L21/30604 ,  H01L21/3083 ,  H01L21/3086 ,  H01L21/823431 ,  H01L27/0886 ,  H01L29/0657

Abstract: A method for preventing buckling in a substrate using a tensile hard mask is provided. The method may include forming a mask over a substrate, the hard mask including a first area having a pattern for forming a plurality of openings and an adjacent second area free of openings, and the hard mask includes a tensile stress therein. The hard mask may be used to form the plurality of openings in the substrate. Partially eroding the hard mask leaves the substrate with the plurality of openings therein and a substantially planar surface, having diminished buckling.

公开(公告)号：US09583397B1

公开(公告)日：2017-02-28

申请号：US15151720

申请日：2016-05-11

Applicant: GLOBALFOUNDRIES INC.

Inventor： Derya Deniz ,  Benjamin G. Moser ,  Sunit S. Mahajan ,  Domingo A. Ferrer Luppi

IPC: H01L21/336 ,  H01L21/8238 ,  H01L29/45 ,  H01L21/3205 ,  H01L21/3215 ,  H01L21/768 ,  H01L21/321 ,  H01L21/285 ,  H01L21/266

CPC classification number: H01L21/823814 ,  H01L21/266 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/28568 ,  H01L21/32053 ,  H01L21/3212 ,  H01L21/3215 ,  H01L21/76841 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76859 ,  H01L21/76889 ,  H01L21/823871 ,  H01L29/45 ,  H01L29/785

Abstract: One aspect of the disclosure relates to a contact within a dielectric layer to a source/drain terminal of a field-effect-transistor (FET). The contact may include: a titanium-tantalum-silicide at a surface of the source/drain terminal; a barrier layer over the titanium-tantalum-silicide; and a metal over the barrier layer and extending to a top surface of the dielectric layer.

Abstract translation: 本公开的一个方面涉及电介质层中与场效应晶体管（FET）的源极/漏极端子的接触。 接触可以包括：在源极/漏极端子的表面处的钛 - 钽 - 硅化物; 在钛 - 钽 - 硅化物上的阻挡层; 以及阻挡层上的金属并延伸到电介质层的顶表面。

公开(公告)号：US20180108706A1

公开(公告)日：2018-04-19

申请号：US15292445

申请日：2016-10-13

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Sunit S. Mahajan

IPC: H01L27/22 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

CPC classification number: H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: Structures including a spin torque transfer magnetic tunnel junction (MTJ) stack and methods for fabricating same. A first contact is coupled with a first portion of a free layer of the MTJ stack, and a second contact is coupled with a second portion of the free layer of the MTJ stack. The free layer is laterally arranged between the first contact and the second contact.

公开(公告)号：US20170200614A1

公开(公告)日：2017-07-13

申请号：US14992391

申请日：2016-01-11

Applicant: GLOBALFOUNDRIES INC.

Inventor： Sunit S. Mahajan ,  Parul Dhagat ,  Anne C. Friedman ,  Timothy A. Brunner ,  Shahrukh A. Khan

IPC: H01L21/308 ,  H01L29/06 ,  H01L27/088 ,  H01L21/306 ,  H01L21/8234

CPC classification number: H01L21/3081 ,  H01L21/30604 ,  H01L21/3083 ,  H01L21/3086 ,  H01L21/823431 ,  H01L27/0886 ,  H01L29/0657

Abstract: A method for preventing buckling in a substrate using a tensile hard mask is provided. The method may include forming a mask over a substrate, the hard mask including a first area having a pattern for forming a plurality of openings and an adjacent second area free of openings, and the hard mask includes a tensile stress therein. The hard mask may be used to form the plurality of openings in the substrate. Partially eroding the hard mask leaves the substrate with the plurality of openings therein and a substantially planar surface, having diminished buckling.