公开(公告)号：US20190206717A1

公开(公告)日：2019-07-04

申请号：US15861799

申请日：2018-01-04

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Xuelian Zhu ,  Jia Zeng ,  Chenchen Wang ,  Jongwook Kye

IPC: H01L21/768 ,  H01L21/48

CPC classification number: H01L21/768 ,  H01L21/4857

Abstract: Methods of patterning metallization lines having variable widths in a metallization layer. A first mandrel layer is formed over a mask layer, with the mask layer overlying a second mandrel layer. The first mandrel layer is etched to form mandrel lines that have variable widths. The first non-mandrel trenches are etched in the mask layer, where the non-mandrel trenches have variable widths. The first mandrel lines are used to etch mandrel trenches in the mask layer, so that the mandrel lines and first non-mandrel lines define a mandrel pattern. The second mandrel layer is etched according to the mandrel pattern to form second mandrel lines, with the second mandrel lines having the variable widths of the plurality of first mandrel lines and the variable widths of the plurality of non-mandrel trenches.

公开(公告)号：US10366917B2

公开(公告)日：2019-07-30

申请号：US15861799

申请日：2018-01-04

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Xuelian Zhu ,  Jia Zeng ,  Chenchen Wang ,  Jongwook Kye

IPC: H01L21/48 ,  H01L21/768

Abstract: Methods of patterning metallization lines having variable widths in a metallization layer. A first mandrel layer is formed over a mask layer, with the mask layer overlying a second mandrel layer. The first mandrel layer is etched to form mandrel lines that have variable widths. The first non-mandrel trenches are etched in the mask layer, where the non-mandrel trenches have variable widths. The first mandrel lines are used to etch mandrel trenches in the mask layer, so that the mandrel lines and first non-mandrel lines define a mandrel pattern. The second mandrel layer is etched according to the mandrel pattern to form second mandrel lines, with the second mandrel lines having the variable widths of the plurality of first mandrel lines and the variable widths of the plurality of non-mandrel trenches.

公开(公告)号：US10236215B1

公开(公告)日：2019-03-19

申请号：US15791711

申请日：2017-10-24

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Ruilong Xie ,  Youngtag Woo ,  Daniel Chanemougame ,  Bipul C. Paul ,  Lars W. Liebmann ,  Heimanu Niebojewski ,  Xuelian Zhu ,  Lei Sun ,  Hui Zang

IPC: H01L21/8234 ,  H01L21/768 ,  H01L23/522 ,  H01L27/088 ,  H01L23/528

Abstract: One illustrative method disclosed includes, among other things, forming an initial gate-to-source/drain (GSD) contact structure and an initial CB gate contact structure, wherein an upper surface of each of these contact structures are positioned at a first level. In one example, this method also includes forming a masking layer that covers the initial CB gate contact structure and exposes the initial GSD contact structure and, with the masking layer in position, performing a recess etching process on the initial GSD contact structure so as to form a recessed GSD contact structure, wherein a recessed upper surface of the recessed GSD contact structure is positioned at a second level that is below the first level.

公开(公告)号：US10347546B2

公开(公告)日：2019-07-09

申请号：US15389632

申请日：2016-12-23

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Jia Zeng ,  Wenhui Wang ,  Xuelian Zhu ,  Jongwook Kye

IPC: H01L23/528 ,  H01L23/532 ,  H01L29/06 ,  H01L29/08 ,  H01L27/105 ,  H01L27/108 ,  H01L27/112 ,  H01L21/84 ,  H01L27/12 ,  H01L23/485 ,  H01L21/82 ,  H01L21/8234 ,  H01L27/088

Abstract: The disclosure relates to integrated circuit (IC) structures with substantially T-shaped wires, and methods of forming the same. An IC structure according to the present disclosure can include a first substantially T-shaped wire including a first portion extending in a first direction, and a second portion extending in a second direction substantially perpendicular to the first direction; an insulator laterally abutting the first substantially T-shaped wire at an end of the first portion, opposite the second portion; and a pair of gates each extending in the first direction and laterally abutting opposing sidewalls of the insulator and the first portion of the substantially T-shaped wire.

公开(公告)号：US10204861B2

公开(公告)日：2019-02-12

申请号：US15399200

申请日：2017-01-05

Applicant: GLOBALFOUNDRIES INC.

Inventor： Xuelian Zhu ,  Jia Zeng ,  Wenhui Wang ,  Youngtag Woo ,  Jongwook Kye

IPC: H01L29/06 ,  H01L29/66 ,  H01L29/78 ,  H01L23/535 ,  H01L29/417 ,  H01L21/768

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to contacts for local connections and methods of manufacture. The structure includes: at least one contact electrically shorted to a gate structure and a source/drain contact and located below a first wiring layer; and gate, source and drain contacts extending from selected gate structures and electrically connecting to the first wiring layer.

公开(公告)号：US10651284B2

公开(公告)日：2020-05-12

申请号：US15791650

申请日：2017-10-24

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Ruilong Xie ,  Youngtag Woo ,  Daniel Chanemougame ,  Bipul C. Paul ,  Lars W. Liebmann ,  Heimanu Niebojewski ,  Xuelian Zhu ,  Lei Sun ,  Hui Zang

IPC: H01L29/49 ,  H01L27/092 ,  H01L29/78 ,  H01L21/28 ,  H01L29/66 ,  H01L29/417 ,  H01L21/8234 ,  H01L27/088

Abstract: One illustrative method disclosed includes, among other things, selectively forming a gate-to-source/drain (GSD) contact opening and a CB gate contact opening in at least one layer of insulating material and forming an initial gate-to-source/drain (GSD) contact structure and an initial CB gate contact structure in their respective openings, wherein an upper surface of each of the GSD contact structure and the CB gate contact structure is positioned at a first level, and performing a recess etching process on the initial GSD contact structure and the initial CB gate contact structure to form a recessed GSD contact structure and a recessed CB gate contact structure, wherein a recessed upper surface of each of these recessed contact structures is positioned at a second level that is below the first level.

公开(公告)号：US20190148240A1

公开(公告)日：2019-05-16

申请号：US16243863

申请日：2019-01-09

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Ruilong Xie ,  Youngtag Woo ,  Daniel Chanemougame ,  Bipul C. Paul ,  Lars W. Liebmann ,  Heimanu Niebojewski ,  Xuelian Zhu ,  Lei Sun ,  Hui Zang

IPC: H01L21/8234 ,  H01L23/528 ,  H01L21/768 ,  H01L23/522 ,  H01L27/088

Abstract: One integrated circuit (IC) product disclosed herein includes a first conductive source/drain contact structure of a first transistor and an insulating source/drain cap positioned above at least a portion of an upper surface of the first conductive source/drain contact structure. In one example, the product also includes a gate-to-source/drain (GSD) contact structure that is conductively coupled to the first conductive source/drain contact structure and a first gate structure of a second transistor, wherein an upper surface of the GSD contact structure is positioned at a first level that is at a level above the upper surface of the first conductive source/drain contact structure, and a CB gate contact structure that is conductively coupled to a second gate structure of a third transistor, wherein an upper surface of the CB gate contact structure is positioned at a level that is above the first level.

公开(公告)号：US20190123162A1

公开(公告)日：2019-04-25

申请号：US15791650

申请日：2017-10-24

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Ruilong Xie ,  Youngtag Woo ,  Daniel Chanemougame ,  Bipul C. Paul ,  Lars W. Liebmann ,  Heimanu Niebojewski ,  Xuelian Zhu ,  Lei Sun ,  Hui Zang

IPC: H01L29/49 ,  H01L27/092 ,  H01L29/417 ,  H01L21/28 ,  H01L29/66 ,  H01L29/78

Abstract: One illustrative method disclosed includes, among other things, selectively forming a gate-to-source/drain (GSD) contact opening and a CB gate contact opening in at least one layer of insulating material and forming an initial gate-to-source/drain (GSD) contact structure and an initial CB gate contact structure in their respective openings, wherein an upper surface of each of the GSD contact structure and the CB gate contact structure is positioned at a first level, and performing a recess etching process on the initial GSD contact structure and the initial CB gate contact structure to form a recessed GSD contact structure and a recessed CB gate contact structure, wherein a recessed upper surface of each of these recessed contact structures is positioned at a second level that is below the first level.

公开(公告)号：US10014297B1

公开(公告)日：2018-07-03

申请号：US15589312

申请日：2017-05-08

Applicant: GLOBALFOUNDRIES INC.

Inventor： Lei Sun ,  Wenhui Wang ,  Xunyuan Zhang ,  Ruilong Xie ,  Jia Zeng ,  Xuelian Zhu ,  Min Gyu Sung ,  Shao Beng Law

IPC: H01L27/088 ,  H01L29/66 ,  H01L21/027 ,  H01L21/8234

CPC classification number: H01L27/0886 ,  H01L21/0337 ,  H01L21/823431 ,  H01L29/6681

Abstract: One aspect of the disclosure is directed to a method of forming an integrated circuit structure. The method may include: providing a set of fins over a semiconductor substrate, the set of fins including a plurality of working fins and a plurality of dummy fins, the plurality of dummy fins including a first subset of dummy fins within a pre-defined distance from any of the plurality of working fins, and a second subset of dummy fins beyond the pre-defined distance from any of the plurality of working fins; removing the first subset of dummy fins by an extreme ultraviolet (EUV) lithography technique; and removing at least a portion of the second subset of dummy fins.

公开(公告)号：US20180182675A1

公开(公告)日：2018-06-28

申请号：US15389632

申请日：2016-12-23

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Jia Zeng ,  Wenhui Wang ,  Xuelian Zhu ,  Jongwook Kye

IPC: H01L21/84 ,  H01L23/528 ,  H01L27/12 ,  H01L23/532

CPC classification number: H01L21/845 ,  H01L21/76895 ,  H01L21/76897 ,  H01L21/823431 ,  H01L21/823468 ,  H01L21/823475 ,  H01L23/485 ,  H01L23/5283 ,  H01L23/5286 ,  H01L27/0886 ,  H01L27/1211

Abstract: The disclosure relates to integrated circuit (IC) structures with substantially T-shaped wires, and methods of forming the same. An IC structure according to the present disclosure can include a first substantially T-shaped wire including a first portion extending in a first direction, and a second portion extending in a second direction substantially perpendicular to the first direction; an insulator laterally abutting the first substantially T-shaped wire at an end of the first portion, opposite the second portion; and a pair of gates each extending in the first direction and laterally abutting opposing sidewalls of the insulator and the first portion of the substantially T-shaped wire.