公开(公告)号：US20150037603A1

公开(公告)日：2015-02-05

申请号：US13954444

申请日：2013-07-30

Applicant: GLOBALFOUNDRIES, Inc.

Inventor： Ernesto Gene de la Garza ,  Martin O'Toole

IPC: B23K1/20 ,  H05K3/34 ,  H01L23/00 ,  H05K13/04 ,  B32B15/04 ,  B32B3/10

CPC classification number: B23K1/20 ,  C23C28/00 ,  C23C28/02 ,  H01L24/05 ,  H01L24/43 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/43 ,  H01L2224/451 ,  H01L2224/85365 ,  H01L2224/85385 ,  H01L2224/85423 ,  H05K3/385 ,  H05K2203/0307 ,  H05K2203/0392 ,  H05K2203/1105 ,  Y10T428/12396 ,  H01L2924/00015

Abstract: Methods of effecting bond adhesion between metal structures, methods of preparing articles including bonded metal structures, and articles including bonded metal structures are provided herein. In an embodiment, a method of effecting bond adhesion between metal structures includes forming a first metal structure on a substrate. The first metal structure includes grains that have a {111} crystallographic orientation, and the first metal structure has an exposed contact surface. Formation of an uneven surface topology is induced in the exposed contact surface of the first metal structure after forming the first metal structure. A second metal structure is bonded to the exposed contact surface of the first metal structure after inducing formation of the uneven surface topology in the exposed contact surface.

Abstract translation: 本文提供了实现金属结构之间的粘合粘合的方法，包括粘结的金属结构的制品的制备方法和包括结合的金属结构的制品。 在一个实施例中，实现金属结构之间的粘合粘合的方法包括在基底上形成第一金属结构。 第一金属结构包括具有{111}晶体取向的晶粒，并且第一金属结构具有暴露的接触表面。 在形成第一金属结构之后，在第一金属结构的暴露的接触表面中引起不平坦的表面拓扑的形成。 在暴露的接触表面中引起不平坦表面拓扑的形成之后，第二金属结构被结合到第一金属结构的暴露的接触表面。

公开(公告)号：US10651046B2

公开(公告)日：2020-05-12

申请号：US16154237

申请日：2018-10-08

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Hsueh-Chung Chen ,  Brendan O'Brien ,  Martin O'Toole ,  Keith Donegan

IPC: H01L21/311 ,  H01L21/768 ,  H01L21/033

Abstract: Methods of self-aligned multiple patterning. A mandrel is formed over a hardmask, and a planarizing layer is formed over the mandrel and the hardmask. The planarizing layer is patterned to form first and second trenches exposing respective first and second lengthwise sections of the mandrel. A portion of the patterned planarizing layer covers a third lengthwise section of the mandrel arranged between the first and second lengthwise sections of the mandrel. After patterning the planarizing layer, the first and second lengthwise sections of the mandrel are removed with an etching process to define a pattern including a mandrel line exposing respective first portions of the hardmask. The third lengthwise section of the mandrel is masked by the portion of the planarizing layer during the etching process, and the third lengthwise section covers a second portion of the hardmask arranged along the mandrel line between the first portions of the hardmask.

公开(公告)号：US09468986B2

公开(公告)日：2016-10-18

申请号：US13954444

申请日：2013-07-30

Applicant: GLOBALFOUNDRIES, Inc.

Inventor： Ernesto Gene de la Garza ,  Martin O'Toole

IPC: B23K1/20 ,  H05K3/34 ,  H05K13/04 ,  H01L23/00 ,  C23C28/00 ,  C23C28/02 ,  H05K3/38 ,  B32B15/04 ,  B32B3/10

CPC classification number: B23K1/20 ,  C23C28/00 ,  C23C28/02 ,  H01L24/05 ,  H01L24/43 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/43 ,  H01L2224/451 ,  H01L2224/85365 ,  H01L2224/85385 ,  H01L2224/85423 ,  H05K3/385 ,  H05K2203/0307 ,  H05K2203/0392 ,  H05K2203/1105 ,  Y10T428/12396 ,  H01L2924/00015

Abstract: Methods of effecting bond adhesion between metal structures, methods of preparing articles including bonded metal structures, and articles including bonded metal structures are provided herein. In an embodiment, a method of effecting bond adhesion between metal structures includes forming a first metal structure on a substrate. The first metal structure includes grains that have a {111} crystallographic orientation, and the first metal structure has an exposed contact surface. Formation of an uneven surface topology is induced in the exposed contact surface of the first metal structure after forming the first metal structure. A second metal structure is bonded to the exposed contact surface of the first metal structure after inducing formation of the uneven surface topology in the exposed contact surface.

Abstract translation: 本文提供了实现金属结构之间的粘合粘合的方法，包括粘结的金属结构的制品的制备方法和包括结合的金属结构的制品。 在一个实施例中，实现金属结构之间的粘合粘合的方法包括在基底上形成第一金属结构。 第一金属结构包括具有{111}晶体取向的晶粒，并且第一金属结构具有暴露的接触表面。 在形成第一金属结构之后，在第一金属结构的暴露的接触表面中引起不平坦的表面拓扑的形成。 在暴露的接触表面中引起不平坦表面拓扑的形成之后，第二金属结构被结合到第一金属结构的暴露的接触表面。

公开(公告)号：US10784119B2

公开(公告)日：2020-09-22

申请号：US16154306

申请日：2018-10-08

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Ravi Prakash Srivastava ,  Hsueh-Chung Chen ,  Steven McDermott ,  Martin O'Toole ,  Brendan O'Brien ,  Terry A. Spooner

IPC: H01L21/308 ,  H01L21/311 ,  H01L21/033 ,  H01L21/768

Abstract: Methods of self-aligned multiple patterning. First and second mandrels are formed over a hardmask, and a conformal spacer layer is deposited over the first mandrel, the second mandrel, and the hardmask between the first mandrel and the second mandrel. A planarizing layer is patterned to form first and second trenches that expose first and second lengthwise portions of the conformal spacer layer respectively between the first and second mandrels. After patterning the planarizing layer, the first and second lengthwise portions of the conformal spacer layer are removed with an etching process to expose respective portions of the hardmask along a non-mandrel line. A third lengthwise portion of the conformal spacer layer is masked during the etching process by a portion of the planarizing layer and defines a non-mandrel etch mask.

公开(公告)号：US09136234B2

公开(公告)日：2015-09-15

申请号：US13937361

申请日：2013-07-09

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Matthias Lehr ,  Marcel Wieland ,  Martin O'Toole

IPC: H01L23/48 ,  H01L23/00

CPC classification number: H01L24/11 ,  H01L24/13 ,  H01L2224/0401 ,  H01L2224/05624 ,  H01L2224/1146 ,  H01L2224/1147 ,  H01L2224/13021 ,  H01L2224/1308 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/351 ,  H01L2924/01202 ,  H01L2924/00

Abstract: When forming sophisticated semiconductor devices including metal pillars arranged on contact pads, which may comprise aluminum, device performance and reliability may be improved by avoiding exposure of the contact pad material to the ambient atmosphere, in particular during and between dicing and packaging processes. To this end, the contact pad material may be covered by a protection layer or may be protected by the metal pillars itself, thereby concurrently improving mechanical stress distribution in the device.

Abstract translation: 当形成复杂的半导体器件时，包括布置在可包括铝的接触焊盘上的金属柱，可以通过避免将接触垫材料暴露于环境大气中，特别是在切割和封装过程期间以及在切割和包装过程之间，从而提高器件的性能和可靠性。 为此，接触垫材料可以被保护层覆盖，或者可以被金属支柱本身保护，从而同时改善装置中的机械应力分布。

公开(公告)号：US20150014843A1

公开(公告)日：2015-01-15

申请号：US13937361

申请日：2013-07-09

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Matthias Lehr ,  Marcel Wieland ,  Martin O'Toole

IPC: H01L23/00

CPC classification number: H01L24/11 ,  H01L24/13 ,  H01L2224/0401 ,  H01L2224/05624 ,  H01L2224/1146 ,  H01L2224/1147 ,  H01L2224/13021 ,  H01L2224/1308 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/351 ,  H01L2924/01202 ,  H01L2924/00

Abstract: When forming sophisticated semiconductor devices including metal pillars arranged on contact pads, which may comprise aluminum, device performance and reliability may be improved by avoiding exposure of the contact pad material to the ambient atmosphere, in particular during and between dicing and packaging processes. To this end, the contact pad material may be covered by a protection layer or may be protected by the metal pillars itself, thereby concurrently improving mechanical stress distribution in the device.

Abstract translation: 当形成复杂的半导体器件时，包括布置在可包括铝的接触焊盘上的金属柱，可以通过避免将接触垫材料暴露于环境大气中，特别是在切割和封装过程期间以及在切割和包装过程之间，从而提高器件的性能和可靠性。 为此，接触垫材料可以被保护层覆盖，或者可以被金属支柱本身保护，从而同时改善装置中的机械应力分布。

公开(公告)号：US20200111677A1

公开(公告)日：2020-04-09

申请号：US16154306

申请日：2018-10-08

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Ravi Prakash Srivastava ,  Hsueh-Chung Chen ,  Steven McDermott ,  Martin O'Toole ,  Brendan O'Brien ,  Terry A. Spooner

IPC: H01L21/311 ,  H01L21/033 ,  H01L21/308 ,  H01L21/768

Abstract: Methods of self-aligned multiple patterning. First and second mandrels are formed over a hardmask, and a conformal spacer layer is deposited over the first mandrel, the second mandrel, and the hardmask between the first mandrel and the second mandrel. A planarizing layer is patterned to form first and second trenches that expose first and second lengthwise portions of the conformal spacer layer respectively between the first and second mandrels. After patterning the planarizing layer, the first and second lengthwise portions of the conformal spacer layer are removed with an etching process to expose respective portions of the hardmask along a non-mandrel line. A third lengthwise portion of the conformal spacer layer is masked during the etching process by a portion of the planarizing layer and defines a non-mandrel etch mask.